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FDS89141
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 3.5 A, 62 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This
Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
Semiconductor‘s
N-Channel
MOSFET
is
advanced
PowerTrench®
produced
using
Fairchild
process
that
incorporates Shielded Gate technology. This process has been
Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
optimized for rDS(on), switching performance and ruggedness.
High performance trench technology for extremely low rDS(on)
Applications
High power and current handling capability in a widely used
surface mount package
Synchronous Rectifier
100% UIL Tested
Primary Switch For Bridge Topology
RoHS Compliant
D2
D2
D1
D1
G2
S2
G1
S1
Pin 1
D2
5
D2
6
D1
7
D1
8
Q2
Q1
4
G2
3
S2
2
G1
1
S1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Ratings
100
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous
3.5
ID
Parameter
-Pulsed
18
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 3)
37
Power Dissipation
TA = 25 °C
(Note 1a)
31
Power Dissipation
TA = 25 °C
(Note 1b)
1.6
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
40
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS89141
Device
FDS89141
©2010 Fairchild Semiconductor Corporation
FDS89141 Rev.1.2
Package
SO-8
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
100
V
69
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 3.5 A
47
62
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 2.8 A
63
100
VGS = 10 V, ID = 3.5 A, TJ = 125 °C
81
107
gFS
Forward Transconductance
2
3.1
-9
VDS = 10 V, ID = 3.5 A
mV/°C
14.7
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1MHz
299
398
pF
70
93
pF
4.7
7
pF
Ω
1.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 50 V, ID = 3.5 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V,
ID = 3.5 A
5
10
1.4
10
ns
ns
9.8
20
ns
2.2
10
ns
5.1
7.1
nC
2.9
4.1
nC
1.4
nC
1.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
(Note 2)
0.8
1.3
VGS = 0 V, IS = 2 A
(Note 2)
0.8
1.2
33
53
ns
23
37
nC
IF = 3.5 A, di/dt = 100 A/μs
V
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10V.
©2010 Fairchild Semiconductor Corporation
FDS89141 Rev. 1.2
2
www.fairchildsemi.com
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
5.0
VGS = 10 V
VGS = 7 V
15
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
18
VGS = 6 V
12
VGS = 5.5 V
9
6
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4.5
4.0
VGS = 5 V
3.5
VGS = 5.5 V
3.0
VGS = 6 V
2.5
2.0
VGS = 7 V
1.5
1.0
0.5
VGS = 10 V
0
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
15
18
400
ID = 3.5 A
VGS = 10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
12
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
ID = 3.5 A
200
TJ = 125 oC
100
TJ = 25 oC
0
100 125 150
4
5
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
12
9
= 150 oC
6
TJ = 25 oC
3
TJ =
3
4
5
-55 oC
6
7
9
10
VGS = 0 V
10
TJ = 150 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.2
8
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDS89141 Rev. 1.2
8
20
15
2
7
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On-Resistance
vs Junction Temperature
18
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
300
TJ, JUNCTION TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
9
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
0
6
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
400
VDD = 25 V
ID = 3.5 A
Ciss
8
100
VDD = 50 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 75 V
4
Coss
10
2
0
0
1
2
3
4
5
1
0.1
6
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
4
3
ID, DRAIN CURRENT (A)
4
IAS, AVALANCHE CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
TJ = 25 oC
TJ = 100 oC
2
TJ = 125 oC
VGS = 10 V
3
2
Package Limited
VGS = 6 V
1
o
RθJA = 78 C/W
1
0.01
0.1
1
0
25
4
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
600
P(PK), PEAK TRANSIENT POWER (W)
20
10
100 us
ID, DRAIN CURRENT (A)
100
o
Figure 9. Unclamped Inductive
Switching Capability
1 ms
1
0.1
75
TA, Ambient TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 135 oC/W
10 s
0.01 TA = 25 oC
0.005
0.1
DC
1
10
100
400
TA = 25 oC
100
10
1
0.5 -4
10
-3
10
-2
10
-1
10
1
2
10
10
3
10
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDS89141 Rev. 1.2
SINGLE PULSE
RθJA = 135 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDS89141 Rev. 1.2
5
www.fairchildsemi.com
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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