FDT86246L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. „ Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package Applications „ Fast switching speed „ Load Switch „ 100% UIL Tested „ Primary Switch „ RoHS Compliant „ Buck/Boost Switch D D S D SOT-223 G G D S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Ratings 150 Units V ±20 V (Note 1a) 2 (Note 4) 20 (Note 3) 6 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation TA = 25 °C (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 12 (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking 86246L Device FDT86246L ©2016 Fairchild Semiconductor Corporation FDT86246L Rev. 1.0 Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDT86246L N-Channel PowerTrench® MOSFET February 2016 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 2.5 V 150 V 110 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 2 A 189 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 1.8 A 208 280 VGS = 10 V, ID = 2 A, TJ = 125 °C 375 452 VDS = 10 V, ID = 2 A 7.3 gFS Forward Transconductance 0.8 1.6 -5 mV/°C 228 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 0.1 238 335 pF 20 30 pF 2 5 pF 0.9 2.7 Ω 4.5 10 ns 1.3 10 ns 11 20 ns 2 10 ns 4.5 6.3 nC 2.3 3.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 75 V, ID = 2 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 2 A nC 0.7 nC 1.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) IF = 2 A, di/dt = 100 A/μs 0.8 1.3 V 44 71 ns 31 50 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 55 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 6 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 2 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 7 A. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. ©2016 Fairchild Semiconductor Corporation FDT86246L Rev. 1.0 2 www.fairchildsemi.com FDT86246L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 6 VGS = 3.5 V 5 4 VGS = 3 V 3 2 VGS = 2.5 V 1 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1 2 3 4 5 5 VGS = 2.5 V 4 VGS = 3 V 3 2 VGS = 3.5 V 1 0 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 800 rDS(on), DRAIN TO 2.0 1.5 1.0 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 2 A VGS = 10 V -50 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 150 oC TJ = 25 oC 2 TJ = -55 oC 1 2 200 TJ = 25 oC 0 1 2 3 4 5 6 7 8 10 3 VGS = 0 V 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2016 Fairchild Semiconductor Corporation FDT86246L Rev. 1.0 9 6 4 1 TJ = 125 oC 400 Figure 4. On-Resistance vs. Gate to Source Voltage VDS = 5 V 3 ID = 2 A VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 600 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs. Junction Temperature 6 6 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.5 0 4 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 0.5 -75 VGS = 10 V VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 1.2 www.fairchildsemi.com FDT86246L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. VGS, GATE TO SOURCE VOLTAGE (V) 10 1000 ID = 2 A Ciss 8 6 CAPACITANCE (pF) VDD = 50 V VDD = 75 V 4 VDD = 100 V 100 Coss 10 Crss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 1 0.1 5 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs. Drain to Source Voltage 30 10 9 8 7 6 5 10 TJ = ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 25 oC 4 TJ = 100 3 oC 2 TJ = 125 oC 10 μs 1 0.1 0.01 100 μs 1 ms 10 ms 100 ms 1s 10 s THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJA = 118 oC/W 1 0.001 0.01 0.1 0.001 0.1 1 1 tAV, TIME IN AVALANCHE (ms) DC CURVE BENT TO MEASURED DATA TA = 25 oC 10 100 600 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 10. Forward Bias Safe Operating Area Figure 9. Unclamped Inductive Switching Capability 10000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 118 C/W 1000 o TA = 25 C 100 10 1 0.1 -5 10 -4 10 -3 10 -2 -1 10 10 0 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2016 Fairchild Semiconductor Corporation FDT86246L Rev. 1.0 4 www.fairchildsemi.com FDT86246L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 0.001 0.001 -5 10 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: SINGLE PULSE -4 10 ZθJA(t) = r(t) x RθJA RθJA = 118 oC/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 -3 10 -2 -1 10 10 0 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2016 Fairchild Semiconductor Corporation FDT86246L Rev. 1.0 5 www.fairchildsemi.com FDT86246L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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