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FDV045P20L
P-Channel PowerTrench® MOSFET
-20 V, -1.15 A, 108 mΩ
Features
General Description
Max rDS(on) = 108 mΩ at VGS = -4.5 V, ID = -1.15 A
Max rDS(on) = 121 mΩ at VGS = -2.5 V, ID = -0.7 A
Very low rDS(on) Mid Voltage P-channel Silicon Technology
Optimised for Low Qg
This product is optimised for fast switching applications as
well as load switch applications
100% UIL Tested
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been optimized for the on-state resistance and yet maintain
superior switching performance.
Applications
Active Clamp Switch
Load Switch
RoHS Compliant
SOT-23
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
ID
PD
TJ, TSTG
Units
V
±8
V
-Continuous
(Note 1a)
-1.15
-Pulsed
(Note 4)
-33
Single Pulse Avalanche Energy
EAS
Ratings
-20
(Note 3)
13
Power Dissipation
(Note 1a)
1.6
Power Dissipation
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
80
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
180
°C/W
Package Marking and Ordering Information
Device Marking
FDV045P20L
Device
FDV045P20L
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
Package
SOT-23
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDV045P20L P-Channel PowerTrench® MOSFET
September 2016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±100
nA
-1.5
V
-20
V
-18
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.5
-0.9
3
mV/°C
VGS = -4.5 V, ID = -1.15 A
86
108
VGS = -2.5 V, ID = -0.7 A
97
121
VGS = -1.8 V, ID = -0.5 A
121
160
VGS = -4.5 V, ID = -1.15A,
TJ = 125 °C
110
138
VDS = -5 V, ID = -1.15 A
3
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
812
1220
pF
119
167
pF
108
151
pF
Ω
20
Switching Characteristics
8.4
17
VDD = -10 V, ID = -1.15 A,
VGS = -4.5 V, RGEN = 6 Ω
6.5
13
ns
76
122
ns
26
42
ns
Total Gate Charge
VGS = 0 V to -4.5 V
7.2
10
nC
VGS = 0 V to -2.5 V
4.4
6.2
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V,
ID = -1.15A
ns
nC
1.2
nC
1.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -1.15 A
(Note 2)
IF = -1.15 A, di/dt = 100 A/μs
-0.8
-1.2
V
11
20
ns
2
10
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 180 °C/W when mounted on a
minimum pad.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -3 A, VDD = -20 V, VGS = -6.4 V.
4. Pulsed Id refer to Fig 10 SOA curve for more details.
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
2
www.fairchildsemi.com
FDV045P20L P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
4
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = -3 V
6
VGS = -2.5 V
VGS = -2 V
4
VGS = -1.8 V
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
VGS = -1.8 V
VGS = -2 V
2
VGS = -2.5 V
1
VGS = -4.5 V
VGS = -3 V
0
2
4
6
8
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
300
1.5
ID = -1.15 A
VGS = -4.5 V
1.4
r DS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3
0
Figure 1. On Region Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
250
I D = -1.15 A
200
TJ = 125 oC
150
100
TJ = 25 oC
50
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs. Junction Temperature
8
-IS, REVERSE DRAIN CURRENT (A)
8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
VDS = -5 V
TJ = 150 oC
4
TJ = 25 oC
2
TJ = -55 oC
0
0
1
2
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
0.001
0.0
3
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
3
www.fairchildsemi.com
FDV045P20L P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
2000
ID = -1.15 A
VDD = -10 V
1000
8
CAPACITANCE (pF)
-V GS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = -8 V
VDD = -12 V
4
2
0
Ciss
Coss
100
0
2
4
6
f = 1 MHz
VGS = 0 V
50
0.1
8
1
Qg, GATE CHARGE (nC)
50
5
10
-ID , DRAIN CURRENT (A)
-IAS, AVALANCHE CURRENT (A)
20
Figure 8. Capacitance vs. Drain
to Source Voltage
7
6
4
TJ = 25 oC
3
TJ = 100 oC
2
THIS AREA IS
LIMITED BY rDS(on)
100 μs
1
1 ms
10 ms
0.1
TJ = 125 oC
0.1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1
0.001
Crss
SINGLE PULSE
TJ = MAX RATED
RθJA = 180 oC/W
o
1
0.01
0.01
10
TA = 25 C
0.1
100 ms
1s
10 s
DC
CURVE BENT TO
MEASURED DATA
1
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
P(PK ), PEAK TRANSIENT POWER (W)
1000
SINGLE PULSE
o
RθJA = 180 C/W
100
o
TA = 25 C
10
1
0.1
-4
10
10
-3
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
4
www.fairchildsemi.com
FDV045P20L P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
-4
10
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 180 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
SINGLE PULSE
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
5
www.fairchildsemi.com
FDV045P20L P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®*
®
tm
Power Supply WebDesigner™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I77
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
6
www.fairchildsemi.com
FDV045P20L P-Channel PowerTrench® MOSFET
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