FDV301N

June 2009 FDV301N Digital FET , N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOIC-16 SOT-223 Mark:301 INVERTER APPLICATION Vcc D D OUT IN G Absolute Maximum Ratings Symbol G S GND S TA = 25oC unless other wise noted Parameter FDV301N Units VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 V VGSS, VI Gate-Source Voltage, VIN 8 V ID, IO Drain/Output Current 0.22 A - Continuous 0.5 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient ©2009 Fairchild Semiconductor Corporation FDV301N Rev.F1 Inverter Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Max Units IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1 µA VI (off) Input Voltage VCC = 5 V, IO = 10 µA 0.5 V VI (on) RO (on) Min VO = 0.3 V, IO = 0.005 A Output to Ground Resistance Typ 1 VI = 2.7 V, IO = 0.2 A V 4 5 Ω Typ Max Units Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min 25 OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS mV / oC 25 1 µA 10 µA 100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A mV / oC -2.1 0.70 TJ =125°C VGS = 4.5 V, ID = 0.4 A 0.85 1.06 V 3.8 5 Ω 6.3 9 3.1 4 ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 0.2 A S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 9.5 pF 6 pF 1.3 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω VDS = 5 V, ID = 0.2 A, VGS = 4.5 V 3.2 8 ns 6 15 ns 3.5 8 ns 3.5 8 ns 0.49 0.7 nC 0.22 nC 0.07 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note) 0.8 0.29 A 1.2 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV301N Rev.F1 Typical Electrical Characteristics 1 .4 0 .5 GS = 4.5V 4 .0 3 .5 3 .0 0 .4 R DS(on ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V 2 .7 2 .5 0 .3 0 .2 2 .0 0 .1 1 .5 VGS = 2 .0V 1 .2 2 .5 2 .7 1 3 .0 3 .5 4 .0 0 .8 4 .5 0 .6 0 0 0 .5 V DS 1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V) 2 .5 0 3 0 .4 0 .5 15 R DS(on) , ON-RESISTANCE (OHM) 1.8 R DS(ON) , NORMALIZED 0 .2 0 .3 I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 0 .1 I D = 0.2A 1.6 VGS = 2.7 V 1.4 1.2 1 0.8 ID = 0.2A 12 25°C 125°C 9 6 3 0 0.6 -50 2 -25 0 25 50 75 100 125 2.5 150 TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation 0.5 V GS = 0V 0.2 I S, REVERSE DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 125°C 0 .1 5 0 .1 0 .0 5 0 0 .5 1 V GS 1 .5 2 , GATE TO SOURCE VOLTAGE (V) 4 Gate-To-Source Voltage. T = -55°C J 25°C V DS = 5.0V 3.5 Figure 4. On Resistance Variation with with Temperature. 0 .2 3 V GS , GATE TO SOURCE VOLTAGE (V) 2 .5 TJ = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0.2 0.4 0.6 0.8 1 V , BODY DIODE FORW A RD VOLTAGE (V) 1.2 SD Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV301N Rev.F1 Typical Electrical And Thermal Characteristics 30 VDS = 5V I D = 0.2A 20 10V 4 15V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 C iss 10 C oss 5 3 2 1 f = 1 MHz V GS = 0V 1 0 .1 0 0 0.1 0.2 0.3 0.4 0.5 C rss 0 .5 1 2 5 V , DRAIN TO SOURCE VOLTAGE (V) DS 0.6 10 25 Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 1 5 ( DS ON )L IM 1m IT 10 0m s 1s 0 .1 10 0 .0 5 VGS = 2.7V 0 .0 2 RθJ A = 357 °C/ W TA = 25°C s 3 2 DC SINGLE PULSE 0 .0 1 0 .5 1 V DS SINGLE PULSE R θJA =357° C/W T A = 25°C 4 s POWER (W) R 0 .2 D I , DRAIN CURRENT (A) 0 .5 1 2 5 10 15 , DRAI N -SOURCE VOLTAGE (V) 25 35 0 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0 .2 0.1 0 .1 0.05 0.02 0.01 0.005 R θJA (t) = r(t) * R θJA R θJA = 357 °C/W 0 .05 P(pk) 0 .02 0.01 t1 Single Pulse =P * R (t) A θJA Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - T 0.001 0.01 0.1 t1 , TIM E (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2009 Fairchild Semiconductor Corporation FDV301N Rev.F1 3 www.fairchildsemi.com ® tm