FDWS9520L-F085

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Other names and brands may be claimed as the property of others. FDWS9520L-F085 Power MOSFET, Dual P-Channel −40 V, −20 A, 12.5 mW Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Wettable Flanks for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX −40 V 12.5 mW @ −10 V −20 A 19.5 mW @ −4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS ±16 V Continuous Drain Current RqJC (Notes 1, 3) TC = 25_C G1 (2) −60.8 ID Steady State TC = 100_C Power Dissipation RqJC (Note 1) TC = 25_C Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 25_C TC = 100_C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current S1 (1) Operating Junction and Storage Temperature Source Current (Body Diode) S2 (3) W 37.5 −12.2 A −8.6 TC = 25_C TC = 25_C, tp = 10 ms G2 (4) A 75 PD TC = 100_C TC = 100_C D2 (5,6) −43.0 ID Steady State D1 (7,8) 3.0 PD 1 W 1.5 IDM −281 A TJ, Tstg −55 to +175 °C IS −20 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = −19) EAS 90 mJ Lead Temperature for Soldering Purposes (1/83 from case for 10 s) TL 260 °C PQFN8 5x6, 1.27P CASE 483BL ORDERING INFORMATION See detailed ordering, marking and shipping information on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 50 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 August, 2018 − Rev. 0 1 Publication Order Number: FDWS9520L−F085/D FDWS9520L−F085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Drain to Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit Off Characteristics IDSS Zero Gate Voltage Drain Current mV/_C 21 VGS = 0 V, VDS = −40 V TJ = 25°C −1 mA TJ = 175°C −1 mA ±100 nA −3 V IGSS VDS = 0 V, VGS = ±16 V VGS(TH) VGS = VDS, ID = −250 mA Zero Gate Voltage Drain Current V On Characteristics (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance −1.8 mV/_C −5.5 VGS(TH)/TJ RDS(on) −1 VGS = −10 V ID = −20 A 10.4 12.5 VGS = −4.5 V ID = −10 A 14.6 19.5 mW Charges, Capacitances & Gate Resistance Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance VGS = 0 V, f = 1 MHz, VDS = −20 V 2370 pF Coss 940 pF Crss 40 pF 17 W VGS = −10 V, VDS = −32 V; ID = −20 A 33 nC VGS = −4.5V, VDS = −32 V; ID = −20 A 13 Qg(th) VGS = 0 to −1 V 2 Gate to Source Gate Charge Qgs VDD = −20 V, ID = −20 A 7 Gate to Drain “Miller” Charge Qgd 4 Plateau Voltage VGP −4 V 8 ns Gate Resistance Total Gate Charge Threshold Gate Charge Rg QG(TOT) VGS = 0.5 V, f = 1 MHz Switching Characteristics VDD = −20 V, ID = −20 A, VGS = −10 V, RGEN = 6 W Turn−On Delay Time td(ON) Turn−On Rise Time tr 21 ns Turn−Off Delay Time td(OFF) 120 ns tf 34 ns Turn−Off Fall Time Drain−Source Diode Characteristics Source to Drain Diode Voltage Reverse Recovery Time VSD TRR ISD = −20 A, VGS = 0 V −0.9 −1.25 V ISD = −10 A, VGS = 0 V −0.83 −1.2 V VGS = 0 V, dISD/dt = 100 A/us, IS = −20 A 46 Charge Time ta 22 Discharge Time tb 24 QRR 37 Reverse Recovery Charge ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 FDWS9520L−F085 ORDERING INFORMATION Device FDWS9520L−F085 Device Marking Package Shipping† FDWS9520L PQFN8 5x6, 12.7P (Pb−Free, Halogen Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 3 FDWS9520L−F085 1.2 70 1.0 60 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 50 40 VGS = −10 V 30 20 10 0 0 0 ZqJA, NORMALIZED THERMAL IMPEDANCE CURRENT LIMITED BY PACKAGE 25 50 75 100 125 150 175 25 50 75 125 100 150 175 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 1 50% Duty Cycle 20% PDM 10% 5% 0.1 2% t1 t2 DUTY CYCLE, D = t1/t2 Peak TJ = PDM X ZqJA X RqJA + TC 1% Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = −10 V TC = 25°C For temperatures above 25°C derate peak current as follows: ƪǸ I + I 25 100 ƫ 175 * T C 150 Single Pulse 10 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 4 0.1 1 10 FDWS9520L−F085 TYPICAL CHARACTERISTICS 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 10 100 ms OPERATION IN THIS AREA MAY BE LIMITED BY PACKAGE OPERATION IN THIS AREA MAY SINGLE PULSE BE LIMITED BY TJ = max rated rDS(on) TC = 25°C 1 1 ms 10 ms 100 ms If R = 0 tAV=(L)(IAS)/(1.3*Rated BVDSS− VDD) If R ≠ 0 tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS− VDD)+1] 10 0.1 0.1 1 10 Starting TJ = 25°C Starting TJ = 150°C 1 0.01 100 0.1 10 1 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS) Figure 5. Forward Bias Safe Operating Area Note: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Pulse Duration = 250 ms Duty Cycle = 0.5% Max 80 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 VDS = −5 V 60 TJ = 175°C TJ = 25°C 40 20 TJ = −55°C 0 2 3 4 1 0.1 TJ = 175°C 0.01 0.001 6 TJ = −55°C TJ = 25°C 0 0.2 0.6 0.4 0.8 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 150 ID, DRAIN CURRENT (A) 5 VGS = 0 V 10 7.0 V 6 250 ms Pulse Width TJ = 25°C 5.0 V RDS(ON), NORMALIZED DRAIN− SOURCE ON−RESISTANCE 1 100 VGS = 10 V 100 4.5 V 4.0 V 50 3.5 V 1.2 3.5 V = =3.5V 250 ms Pulse Width VVGS GS 4.0 V 4.0V TJ = 25°C 4.5VV 4.5 5.0VV 5.0 7.0VV 7.0 10VV 10 5 4 3 2 1 0 0 0 1 2 3 0 5 4 30 60 90 120 150 VDS, DRAIN−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 9. Saturation Characteristics Figure 10. Normalized RDS(ON) vs. Drain Current www.onsemi.com 5 FDWS9520L−F085 TYPICAL CHARACTERISTICS 1.8 ID = −20 A RDS(ON), NORMALIZED DRAIN− SOURCE ON−RESISTANCE RDS(on), ON−RESISTANCE (mW) 100 75 Pulse Duration = 250 ms Duty Cycle = 0.5% Max 50 TJ = 175°C 25 TJ = 25°C 0 4 3 5 6 8 7 1.2 1.0 0.8 0 −40 40 80 160 120 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 11. RDS(on) vs. Gate Voltage Figure 12. Normalized RDS(on) vs. Junction Temperature 1.3 200 1.10 VGS = VDS ID = −250 mA 1.1 0.9 0.7 0.5 0.3 −80 40 0 −40 80 120 160 200 ID = −1 mA 1.05 1.00 0.95 0.90 −80 −40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Normalized Gate Threshold Voltage vs. Temperature Figure 14. Normalized Drain−to−Source Breakdown Voltage vs. Junction Temperature VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS CAPACITANCE (pF) 1.4 0.6 −80 9 NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 2 ID = −20 A VGS = −10 V 1.6 1K COSS 100 10 CRSS f = 1 MHz VGS = 0 V 1 0.1 1 10 10 VDD = −20 V 8 VDD = −16 V 6 VDD = −24 V 4 2 0 0 40 8 16 24 32 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 15. Capacitance vs. Drain−to−Source Voltage Figure 16. Gate Charge vs. Gate−to−Source Voltage www.onsemi.com 6 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483BL ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13690G PQFN8 5X6, 1.27P DATE 23 APR 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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