FFPF08S60STTU

FFPF08S60ST 8 A, 600 V, STEALTHII Diode Description The FFPF08S60S is STEALTHt II diode with soft recovery characteristics. It is silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. www.onsemi.com 1 1. Cathode 2 2. Anode Features • Stealth Recovery trr= 30 ns (@ IF= 8 A) ♦ Max Forward Voltage, VF= 3.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • This Device is Pb−Free and are RoHS Compliant 1 Applications • • • • General Purpose SMPS Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits 2 TO−220F−2L CASE 221AS MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 95_C 8 A 80 A − 65 to +175 _C IFSM TJ, TSTG Non−repetitive Peak Surge Current 60Hz Single Half−Sine Wave Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. $Y&Z&3&K F08S60ST $Y &Z&3 &K F08S60ST = ON Semiconductor Logo = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION Device Package FFPF08S60STTU TO−220F−2L © Semiconductor Components Industries, LLC, 2011 March, 2019 − Rev. 3 1 Shipping 50 / Tube Publication Order Number: FFPF08S60ST/D FFPF08S60ST THERMAL CHARACTERISTICS Symbol RqJC Parameter Maximum Thermal Resistance, Junction−to−Case Value Unit 3.4 _C/W ELECTRICAL CHARACTERISTICS Parameter VF1 IR1 trr Trr Irr S factor Qrr trr Irr S factor WAVL Conditions Min. Typ. Max Unit IF = 8 A IF = 8 A TC = 25 _C TC = 125 _C − − 2.1 1.6 2.6 − VV VR = 600 V VR = 600 V TC = 25 _C TC = 125 _C − − − − 100 500 mA mA IF =1 A, diF/dt = 100 A/ms, VR= 30 V TC = 25 _C − − 25 ns IF =8 A, diF/dt = 200 A/ms, VR = 390 V TC = 25 _C − − − − 19 2.2 0.6 21 30 − − − − − − − 58 4.3 1.3 125 − − − − 20 − − IF =8 A, diF/dt = 200 A/ms, VR= 390 V TC = 125 _C Avalanche Energy (L = 40 mH) ns A nC ns A nC mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2 FFPF08S60ST TYPICAL PERFORMANCE CHARACTERISTICS TC = 25°C unless otherwise noted 1E−4 REVERSE CURRENT, IR [A] FORWARD CURRENT, IF [A] 100 o TC=125 C 10 o TC=25 C 1 o TC=75 C 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1E−5 1E−6 o TC = 75 C 1E−7 o TC = 25 C 1E−8 1E−9 0 3.2 o TC = 125 C 100 Figure 3. Typical Forward Voltage Drop REVERSE RECOVERY TIME, trr [ns] JUNCTION CAPACITANCE, CJ [pF] 400 500 600 100 f = 1MHz 90 80 70 60 50 40 30 20 10 1 10 100 IF = 8A 90 80 70 o TC = 125 C 60 50 40 o TC = 75 C 30 20 o TC = 25 C 10 0 100 1000 200 REVERSE VOLTAGE, VR [V] AVERAGE FORWARD CURRENT, I F(AV) [A] IF=8A 8 7 6 5 o TC = 125 C o TC = 75 C 4 o TC = 25 C 3 2 1 0 100 200 300 400 500 Figure 6. Typical Reverse Recovery Time 10 9 300 di F/dt [A/ ms] Figure 5. Typical Junction Capacitance REVERSE RECOVERY CURRENT, Irr [A] 300 Figure 4. Typical Reverse Current 100 0 200 REVERSE VOLTAGE, VR[V] FORWARD VOLTAGE, VF [V] 400 40 30 20 10 0 500 25 diF /dt [A/ m s] 50 75 100 125 150 175 o CASE TEMPERATURE, TC[ C] Figure 8. Forward Current Deration Curve Figure 7. Typical Reverse Recovery Current STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 Fullpack, 2−Lead / TO−220F−2FS CASE 221AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON67438E DATE 29 FEB 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 2−LEAD / TO−220F−2FS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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