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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FGH75T65SHD
650 V, 75 A Field Stop Trench IGBT
Features
•
•
•
•
•
•
•
•
•
General Description
=175oC
Maximum Junction Temperature: TJ
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
G
G
C
TO-247
long leads
E
Absolute Maximum Ratings
Symbol
VCES
VGES
E
TC = 25°C unless otherwise noted
Description
FGH75T65SHD_F155
Unit
Collector to Emitter Voltage
650
V
Gate to Emitter Voltage
20
V
Transient Gate to Emitter Voltage
± 30
V
150
A
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
75
A
ILM (1)
Pulsed Collector Current
@ TC = 25oC
225
A
ICM (2)
Pulsed Collector Current
225
A
75
A
IC
IF
IFM (2)
PD
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC =
100oC
Pulsed Diode Maximum Forward Current
50
A
225
A
W
Maximum Power Dissipation
@ TC = 25oC
455
Maximum Power Dissipation
@ TC = 100oC
227
W
TJ
Operating Junction Temperature
-55 to +175
oC
Tstg
Storage Temperature Range
-55 to +175
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 225 A, RG = 20 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
1
www.fairchildsemi.com
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
February 2015
Symbol
Parameter
FGH75T65SHD_F155
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case, Max.
0.33
oC/W
RJC(Diode)
Thermal Resistance, Junction to Case, Max.
0.65
oC/W
RJA
Thermal Resistance, Junction to Ambient, Max.
40
oC/W
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size Tape Width
FGH75T65SHD_F155 FGH75T65SHD TO-247 G03
Electrical Characteristics of the IGBT
Symbol
Parameter
Tube
-
Quantity
-
30
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
-
0.6
-
V/oC
Off Characteristics
BVCES
BVCES /
TJ
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA
Temperature Coefficient of Breakdown
IC = 1 mA, Reference to 25oC
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 75 mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.0
5.5
7.5
V
IC = 75 A, VGE = 15 V
-
1.6
2.1
V
IC = 75 A, VGE = 15 V,
TC = 175oC
-
2.28
-
V
-
3680
-
pF
VCE = 30 V, VGE = 0 V,
f = 1MHz
-
179
-
pF
-
43
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
-
28
-
ns
tr
Rise Time
-
56
-
ns
td(off)
Turn-Off Delay Time
-
80
-
ns
tf
Fall Time
-
14.4
-
ns
Eon
Turn-On Switching Loss
-
2.4
-
mJ
VCC = 400 V, IC = 75 A,
RG = 3 , VGE = 15 V,
Inductive Load, TC = 25oC
Eoff
Turn-Off Switching Loss
-
0.72
-
mJ
Ets
Total Switching Loss
-
3.12
-
mJ
td(on)
Turn-On Delay Time
-
26.4
-
ns
tr
Rise Time
-
58.4
-
ns
td(off)
Turn-Off Delay Time
-
86.4
-
ns
tf
Fall Time
-
13.6
-
ns
Eon
Turn-On Switching Loss
-
3.7
-
mJ
Eoff
Turn-Off Switching Loss
-
0.98
-
mJ
Ets
Total Switching Loss
-
4.68
-
mJ
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
VCC = 400 V, IC = 75 A,
RG = 3 , VGE = 15 V,
Inductive Load, TC = 175oC
2
www.fairchildsemi.com
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Thermal Characteristics
Symbol
Parameter
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
Test Conditions
VCE = 400 V, IC = 75 A,
VGE = 15 V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
(Continued)
Min.
Typ.
Max
Unit
-
123
-
nC
-
22.6
-
nC
-
44.9
-
nC
Unit
TC = 25°C unless otherwise noted
Test Conditions
IF = 50 A
IF =50 A, dIF/dt = 200 A/s
3
Min.
Typ.
Max
TC = 25oC
-
2.2
2.7
TC = 175oC
-
1.8
-
TC = 175oC
-
60
-
-
43.4
-
-
207
-
TC =
25oC
TC = 175oC
TC = 25oC
-
87.9
-
TC = 175oC
-
1243
-
V
uJ
ns
nC
www.fairchildsemi.com
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
4
www.fairchildsemi.com
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
Figure 12. Turn-on Characteristics vs.
Collector Current
5
www.fairchildsemi.com
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
6
www.fairchildsemi.com
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22.Transient Thermal Impedance of Diode
PDM
t1
©2014 Fairchild Semiconductor Corporation
FGH75T65SHD Rev. C3
7
t2
www.fairchildsemi.com
4.82
E
4.58
15.87
E
15.37
A
B
12.81 E
4.13
3.53
6.85
6.61
3.65
E
3.51
0.254 M
5.58
E
5.34
5.20
4.96
1.35
0.51
13.08 MIN
20.82
E
20.32
1
3
3
1.87
1.53(2X)
3.93
E
3.69
1.60
20.25
E
19.75
2.77
2.43
0.71
0.51
5.56
2.66
2.29
11.12
1.35
1.17
0.254 M
B A M
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247G03_REV02
1
B A M
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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