IGBT - Field Stop
600 V, 40 A
FGH80N60FD2
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for induction heating and
PFC applications where low conduction and switching losses are
essential.
Features
•
•
•
•
•
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
High Input Impedance
Fast Switching
This Device is Pb−Free and is RoHS Compliant
www.onsemi.com
VCES
IC
600 V
40 A
C
G
Applications
• Induction Heating, PFC
E
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH80N60
FD2
$Y
&Z
&3
&K
FGH80N60FD2
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
February, 2020 − Rev. 3
1
Publication Order Number:
FGH80N60FD2/D
FGH80N60FD2
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Unit
VCES
Collector to Emitter Voltage
600
V
VGES
Gate−Emitter Voltage
±20
V
TC = 25°C
80
A
TC = 100°C
40
A
Pulsed Collector Current
TC = 25°C
160
A
Maximum Power Dissipation
TC = 25°C
290
W
TC = 100°C
116
W
Operating Junction Temperature
−55 to +150
°C
Storage Temperature Range
−55 to +150
°C
300
°C
IC
ICM (Note 1)
PD
TJ
TSTG
TL
Description
Collector Current
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
Typ.
Max.
Unit
RqJC (IGBT)
Thermal Resistance, Junction to Case
−
0.43
_C/W
RqJA (Diode)
Thermal Resistance, Junction to Case
−
1.45
_C/W
Thermal Resistance, Junction to Ambient
−
40
_C/W
RqJA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing
Method
Reel Size
Tape Width
Quantity
FGH80N60FD2TU
FGH80N60FD2
TO−247
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE = 0 V, IC = 250 mA
600
−
−
V
VGE = 0 V, IC = 250 mA
−
0.6
−
V/°C
OFF CHARACTERISTICS
BVCES
Collector−Emitter Breakdown Voltage
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage
ICES
Collector Cut−Off Current
VCE = VCES, VGE = 0 V
−
−
250
mA
IGES
G−E Leakage Current
VGE = VGES, VCE = 0 V
−
−
±400
nA
4.5
5.5
7.0
V
ON CHARACTERISTICS
VGE(th)
G−E Threshold Voltage
IC = 250 mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
−
1.8
2.4
V
IC = 40 A, VGE = 15 V,
TC = 125°C
−
2.05
−
V
VCE = 30 V, VGE = 0 V,
f = 1 MHz
−
2110
−
pF
−
200
−
pF
−
60
−
pF
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
www.onsemi.com
2
FGH80N60FD2
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
−
21
−
ns
−
56
−
ns
Turn−Off Delay Time
−
126
−
ns
Fall Time
−
50
100
ns
Eon
Turn−On Switching Loss
−
1
1.5
mJ
Eoff
Turn−Off Switching Loss
−
0.52
0.78
mJ
Ets
Total Switching Loss
−
1.52
2.28
mJ
Td(on)
Turn−On Delay Time
−
20
−
ns
SWITCHING CHARACTERISTICS
Td(on)
Tr
Td(off)
Tf
Tr
VCC = 400 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
Turn−On Delay Time
Rise Time
VCC = 400 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 125°C
−
54
−
ns
Turn−Off Delay Time
−
131
−
ns
Fall Time
−
70
−
ns
Eon
Turn−On Switching Loss
−
1.1
−
mJ
Eoff
Turn−Off Switching Loss
−
0.78
−
mJ
Ets
Total Switching Loss
−
1.88
−
mJ
Qg
Total Gate Charge
−
120
−
nC
Qge
Gate−Emitter Charge
−
14
−
nC
Qgc
Gate−Collector Charge
−
58
−
nC
Td(off)
Tf
Rise Time
VCE = 400 V, IC = 40 A,
VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Symbol
VFM
Trr
Irr
Qrr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Test Conditions
IF = 15 A
IF = 15 A,
diF/dt = 200 A/ms
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
Min
Typ
Max
Unit
TC = 25°C
−
1.2
1.5
V
TC = 125°C
−
1.0
−
TC = 25°C
−
61
−
TC = 125°C
−
125
−
TC = 25°C
−
4.8
−
TC = 125°C
−
8.4
−
TC = 25°C
−
146
−
TC = 125°C
−
525
−
ns
A
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS
o
160
15V
TC = 25 C
20V
120
Collector Current, IC (A)
Collector Current, IC (A)
160
12V
10V
80
40
0
VGE = 8V
0
2
4
6
8
40
VGE = 8V
0
0
2
4
6
8
10
Collector−Emitter Voltage, VCE (V)
Figure 2. Typical Saturation Voltage
Characteristics
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
Collector Current, IC (A)
Collector Current, IC (A)
10V
80
10
160
o
TC = 25 C
120
o
TC = 125 C
80
40
0
1
2
3
4
5
o
TC = 25 C
120
o
TC = 125 C
80
40
0
6
2
Collector−Emitter Voltage, VCE (V)
4
6
8
Collector−Emitter Voltage, VCE (V)
20
80A
2.5
40A
2.0
20A
1.5
Common Emitter
VGE = 15V
25
50
75
100
12
Figure 4. Transfer Characteristics
3.5
3.0
10
Gate−Emitter Voltage,VGE (V)
Figure 3. Typical Saturation
Voltage Characteristics
Collector−Emitter Voltage, VCE (V)
12V
120
Figure 1. Typical Output Characteristics
1.0
15V
20V
Collector−Emitter Voltage, VCE (V)
0
o
TC = 125 C
o
TC = 25 C
16
12
8
40A
4
80A
IC = 20A
0
125
Common Emitter
4
8
12
16
20
Gate−Emitter Voltage, VGE (V)
Case Temperature, TC (5C)
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
www.onsemi.com
4
FGH80N60FD2
20
5000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
o
TC = 125 C
16
4000
Capacitance (pF)
CE
Collector−Emitter Voltage, VCE (V)
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
12
8
40A
4
3000
Coss
2000
1000
80A
Crss
IC = 20A
0
4
8
12
16
0
0.1
20
Gate−Emitter Voltage, VGE (V)
o
10ms
100
TC = 25 C
Vcc = 100V
300V
200V
9
6
3
0
50
100
100ms
10
1ms
DC
Single Nonrepetitive
Pulse TC=255C
0.1
0.01
150
10 ms
1
Curves must be derated
linearly with increase
in temperature
1
10
Gate Charge, Qg (nC)
100
1000
Collector−Emitter Voltage, VCE (V)
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
200
200
100
Switching Time (ns)
100
10
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
td(on)
10
o
TC = 25 C
Safe Operating Area
o
o
1
30
400
Common Emitter
12
0
10
Figure 8. Capacitance Characteristics
Collector Current, IC (A)
Gate−Emitter Voltage, VGE (V)
15
1
Collector−Emitter Voltage, VGE (V)
Figure 7. Saturation Voltage vs. VGE
Collector Current, IC (A)
o
TC = 25 C
Ciss
VGE = 20V, TC = 100 C
1
10
100
5
1000
Collector−Emitter Voltage, VCE (V)
TC = 125 C
0
10
20
30
40
50
Gate Resistance, RG (W)
Figure 11. Turn−Off Switching SOA
Characteristics
Figure 12. Turn−On Characteristics vs.
Gate Resistance
www.onsemi.com
5
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2000
200
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
1000
o
TC = 125 C
td(off)
100
tf
10
20
30
40
td(on)
10
20
50
40
Figure 13. Turn−Off Characteristics vs.
Gate Resistance
5
o
Switching Time (ns)
Switching Loss (mJ)
o
TC = 125 C
td(off)
100
tf
40
60
Eon
o
o
TC = 125 C
Eoff
1
40
60
Eon
Eoff
1
10
20
30
40
Figure 16. Switching Loss vs.
Gate Resistance
10
TC = 25 C
o
TC = 125 C
Gate Resistance, RG (W)
Figure 15. Turn−Off Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 10 W
o
TC = 25 C
0.3
0
80
Collector Current, IC (A)
Switching Loss (mJ)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25 C
0.1
20
80
Figure 14. Turn−On Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 10 W
20
20
60
Collector Current, IC (A)
Gate Resistance, RG (W)
500
tr
o
TC = 125 C
Switching Time (ns)
Switching Time (ns)
o
0
TC = 25 C
100
o
TC = 25 C
10
Common Emitter
VGE = 15V, RG = 10 W
80
Collector Current, IC (A)
Figure 17. Switching Loss vs. Collector Current
www.onsemi.com
6
50
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Thermal Response (Zthjc)
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E−3
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 19. Transient Thermal Impedance of IGBT
10
Stored Recovery Charge, Qrr (nC)
Forward Current, IF (A)
1000
o
TC = 125 C
o
TC = 25 C
1
0.1
0
1
2
800
o
125 C
600
400
o
25 C
200
0
100
3
200
Forward Voltage, VF (V)
Figure 18. Forward Characteristics
Reverse Recovery Current. Irr (A)
Reverse Recovery Time, trr (ns)
20
140
120
o
125 C
100
80
60
o
20
100
400
Figure 20. Stored Charge
160
40
300
di/dt, (A/ms)
25 C
200
300
400
15
o
125 C
10
5
o
25 C
0
100
200
300
di/dt, (A/ms)
di/dt, (A/ms)
Figure 21. Reverse Recovery Time
Figure 22. Reverse Recovery Current
www.onsemi.com
7
400
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative