FGL40N120ANTU

IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-264 G C E E Absolute Maximum Ratings Symbol Parameter FGL40N120AN Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±25 V IC ICM(1) PD Collector Current @TC = 25°C 64 A Collector Current @TC = 100°C 40 A Pulsed Collector Current 160 A Maximum Power Dissipation @TC = 25°C 500 W Maximum Power Dissipation @TC = 100°C 200 W 10 µs SCWT Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C TJ Operating Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds 300 °C Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W ©2007 Fairchild Semiconductor Corporation FGL40N120AN Rev. A1 1 www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT July 2007 ® Device Marking Device Package Reel Size Tape Width Quantity FGL40N120AN FGL40N120AN TO-264 - - 25 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA IC = 250µA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 5.5 7.5 V IC = 40A, VGE = 15V -- 2.6 3.2 V IC = 40A, VGE = 15V, TC = 125°C -- 2.9 -- V IC = 64A, VGE = 15V -- 3.15 -- V -- 3200 -- pF -- 370 -- pF -- 125 -- pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Fall Time -- 40 80 ns Eon Turn-On Switching Loss -- 2.3 3.45 mJ Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ Ets Total Switching Loss -- 3.4 5.1 mJ td(on) Turn-On Delay Time -- 20 -- ns tr Rise Time -- 25 -- ns td(off) Turn-Off Delay Time -- 120 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 1.8 -- mJ Ets Total Switching Loss -- 4.3 -- mJ Qg Total Gate charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600V, IC = 40A, VGE = 15V 2 FGL40N120AN Rev. A1 -- 45 -- ns -- 2.5 -- mJ -- 220 330 nC -- 25 38 nC -- 130 195 nC www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Package Marking and Ordering Information FGL40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 Figure 2. Typical Saturation Voltage Characteristics 160 TC = 25°C 20V 17V 15V 250 Common Emitter VGE = 15V o TC = 25 C 200 Collector Current, IC [A] Collector Current, IC [A] 120 12V 150 VGE = 10V 100 o TC = 125 C 80 40 50 0 0 0 2 4 6 8 10 0 Collector-Emitter Voltage, VCE [V] 80 Common Emitter VGE = 15V VCC = 600V Load Current : peak of square wave 70 60 4 80A Load Current [A] Collector-Emitter Voltage, VCE [V] 6 Figure 4. Load Current vs. Frequency 3 40A 2 50 40 30 20 IC = 20A Duty cycle : 50% TC = 100°C 10 Power Dissipation = 100W 0 1 25 50 75 100 0.1 125 1 Case Temperature, TC [°C] 20 100 1000 Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25°C 16 12 8 80A 4 10 Frequency [kHz] Figure 5. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 4 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 2 40A IC = 20A 0 Common Emitter TC = 125°C 16 12 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 0 Gate-Emitter Voltage, VGE [V] 8 12 16 20 Gate-Emitter Voltage, VGE [V] 3 FGL40N120AN Rev. A1 4 www.fairchildsemi.com (Continued) Figure 7. Capacitance Characteristics 6000 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz TC = 25°C 5000 100 Switching Time [ns] Capacitance [pF] Ciss 4000 3000 2000 Coss 1000 tr Common Emitter VCC = 600V, VGE = ±15V td(on) IC = 40A Crss TC = 25°C TC = 125°C 10 0 1 0 10 10 20 Figure 9. Turn-Off Characteristics vs. Gate Resistance 50 60 70 Common Emitter VCC = 600V, VGE = ±15V TC = 25°C IC = 40A td(off) TC = 125°C TC = 25°C 10 TC = 125°C Switching Loss [mJ] Switching Time [ns] 40 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = ±15V, IC = 40A 1000 30 Gate Resistance, RG [Ω ] Collector-Emitter Voltage, VCE [V] 100 tf Eon Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance, RG [Ω] Figure 11. Turn-On Characteristics vs. Collector Current 40 50 60 70 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 5Ω Common Emitter VGE = ±15V, RG = 5Ω 100 30 Gate Resistance, RG [Ω] TC = 25°C TC = 25°C tr TC = 125°C Switching Time [ns] Switching Time [ns] TC = 125°C td(on) td(off) 100 tf 10 20 30 40 50 60 70 20 80 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] 4 FGL40N120AN Rev. A1 30 www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Typical Performance Characteristics FGL40N120AN 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 16 Common Emitter VGE = ±15V, RG = 5Ω TC = 25°C Switching Loss [mJ] Eoff 1 0.1 600V 12 10 400V 8 6 4 2 0 20 30 40 50 60 70 80 0 50 Collector Current, IC [A] 100µs Collector Current, IC [A] DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.01 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 250 100 1ms 10 0.1 200 50µs Ic MAX (Continuous) 0.1 150 Figure 16. Turn-Off SOA Ic MAX (Pulsed) 100 100 Gate Charge, Qg [nC] Figure 15. SOA Characteristics Collector Current, Ic [A] Vcc = 200V TC = 25°C Eon TC = 125°C Gate-Emitter Voltage, VGE [V] 10 Common Emitter RL = 15Ω 14 10 100 1000 1 10 Collector - Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.1 0.5 0.2 0.1 0.01 0.05 Pdm Pdm t1 t1 0.02 0.01 1E-3 1E-5 t2 t2 single pulse 1E-4 Duty Dutyfactor factorDD==t1 t1//t2 t2 Peak PeakTj Tj==Pdm Pdm××Zthjc Zthjc++TTCC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 5 FGL40N120AN Rev. A1 www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Mechanical Dimensions (8.30) (1.00) (2.00) 20.00 ±0.20 1.50 ±0.20 (7.00) .20 ) (7.00) 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 0) .00 (2.00) (11.00) 2.0 (R (R1 (0.50) 0 ±0 ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters 6 FGL40N120AN Rev. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I29 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com