FGP20N60UFDTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGP20N60UFD 600 V, 20 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C G TO-220 GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD Description Collector to Emitter Voltage Ratings Unit 600 V Gate to Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC 20 A 25oC 60 A o W Pulsed Collector Current @ TC = Maximum Power Dissipation @ TC = 25 C 165 Maximum Power Dissipation @ TC = 100oC 66 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C C oC 300 Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 0.76 Unit o C/W C/W C/W RθJC(Diode) Thermal Resistance, Junction to Case - 2.51 o RθJA Thermal Resistance, Junction to Ambient - 62.5 o ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 1 www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT March 2015 Device Marking Device Package Reel Size Tape Width Quantity FGP20N60UFD FGP20N60UFDTU TO-220 - - 50ea Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES / ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V, TC = 25oC - - 250 μA VCE = VCES, VGE = 0 V, TC = 125oC - - 1 mA VGE = VGES, VCE = 0V - - ±400 nA IC = 250 μA, VCE = VGE 4.0 5.0 6.5 V IC = 20 A, VGE = 15 V - 1.8 2.4 V IC = 20 A, VGE = 15 V, TC = 125oC - 2.0 - V - 940 - pF IGES G-E Leakage Current On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 110 - pF - 40 - pF Switching Characteristics td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 17 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC - 87 - ns - 32 64 ns - 0.38 - mJ - 0.26 - mJ Ets Total Switching Loss - 0.64 - mJ td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 92 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.36 - mJ Ets Total Switching Loss - 0.77 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC VCE = 400 V, IC = 20 A, VGE = 15 V 2 - 63 - ns - 0.41 - mJ - 63 - nC - 7 - nC - 32 - nC www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter TC = 25°C unless otherwise noted Test Conditions VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr IF = 10 A, Diode Reverse Recovery Charge dIF/dt = 200 A/μs ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 IF = 10 A Min. Typ. Max TC = 25oC - 1.9 2.5 TC = 125oC - 1.7 - TC = 25oC - 35 - - 57 - TC = 25oC - 41 - o - 96 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 60 Figure 2. Typical Output Characteristics 60 o TC = 25 C 20V o TC = 125 C 20V 12V Collector Current, IC [A] Collector Current, IC [A] 10V 40 20 VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 20 VGE = 8V 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 60 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 10V 40 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics o TC = 125 C 40 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] o TC = 125 C 40 20 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 3.2 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 2.8 40A 2.4 2.0 20A 1.6 IC = 10A 1.2 TC = 25 C 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 12V 15V 15V Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 0.8 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 20A 4 40A IC = 10A 0 20 0 Figure 9. Capacitance Characteristics 20 Figure 10. Gate charge Characteristics 2500 15 Common Emitter VGE = 0V, f = 1MHz Common Emitter Gate-Emitter Voltage, VGE [V] o o 2000 Capacitance [pF] 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 25 C Cies 1500 1000 Coes Cres 500 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] TC = 25 C 12 300V VCC = 100V 9 200V 6 3 0 30 0 Figure 11. SOA Characteristics 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100μs 10 Switching Time [ns] Collector Current, Ic [A] 10μs 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 25 C o TC = 125 C 5 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 0 1000 5 10 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 200 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V IC = 20A 100 o TC = 25 C o o o TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C td(off) 100 tf 10 0 10 20 30 40 50 TC = 125 C tr td(on) 10 3 60 0 10 Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current 30 40 Figure 16. Switching Loss vs. Gate Resistance 3 300 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C Switching Time [ns] 20 Collector Current, IC [A] td(off) 100 tf 10 0 10 20 30 o TC = 125 C 0 Collector Current, IC [A] Figure17. Switching Loss vs. Collector Current Eon Eoff 0.1 40 TC = 25 C 1 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure18. Turn off Switching SOA Characteristics 10 100 Common Emitter VGE = 15V, RG = 10Ω o o Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eon TC = 125 C 1 Eoff 0.1 10 Safe Operating Area o 0.02 0 10 20 30 40 1 Collector Current, IC [A] ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 VGE = 15V, TC = 125 C 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 100 40 o o 10 o TJ = 75 C 10 Reverse Current , IR [μA] Forward Current, IF [A] TJ = 125 C o TJ = 25 C 1 o TC = 25 C o TC = 125 C 1 o TC = 75 C 0.1 o TC = 25 C 0.01 TC = 75 C o TC = 125 C 1E-3 0.1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 22. Reverse Recovery Time 0.05 60 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 200A/μs 0.04 0.03 di/dt = 100A/μs 0.02 0.01 0 5 10 15 50 di/dt = 100A/μs 40 30 200A/μs 20 10 20 0 5 Forward Current, IF [A] 10 15 20 Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 7 www.fairchildsemi.com FGP20N60UFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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