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FGP5N60LS
600 V, 5 A Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild’s new series of
field stop IGBTs offer the optimum performance for HID ballast
where low conduction losses are essential.
• Low Saturation Voltage: VCE(sat) =1.7 V @ IC = 5 A
• High Input Impedance
• RoHS Compliant
Applications
• HID Ballast
C
G C E
G
TO-220
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
Pulsed Collector Current
o
@ TC = 25 C
o
Maximum Power Dissipation
@ TC = 25 C
Maximum Power Dissipation
o
@ TC = 100 C
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Unit
600
V
20
V
10
A
5
A
36
A
83
W
33
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive test , Pulse width = 100 usec , Duty = 0.2, VGE = 13.5 V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC
Thermal Resistance, Junction to Case
-
1.5
o
C/W
RJA
Thermal Resistance, Junction to Ambient
-
62.5
o
C/W
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
1
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
November 2013
Part Number
Top Mark
FGP5N60LS
FGP5N60LS
Package Packing Method
TO-220
Parameter
Tape Width
Quantity
N/A
N/A
50
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
-
0.8
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
G-E Threshold Voltage
IC = 250 A, VCE = VGE
2.7
3.9
4.5
V
IC = 5 A, VGE = 15 V
-
1.7
2.1
V
Collector to Emitter Saturation Voltage
IC = 5 A, VGE = 15 V,
TC = 125oC
-
1.8
-
V
IC = 14 A, VGE = 12 V
-
2.7
3.2
V
IC = 14 A, VGE = 12 V,
TC = 125oC
-
3.1
-
V
-
278
-
pF
On Characteristics
VGE(th)
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
28
-
pF
-
11
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
4.3
-
ns
tr
Rise Time
-
1.6
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400 V, IC = 5 A,
RG = 10, VGE = 15 V,
Inductive Load, TC = 25oC
-
36
-
ns
-
118
-
ns
-
38
-
J
-
130
-
J
Ets
Total Switching Loss
-
168
-
J
td(on)
Turn-On Delay Time
-
4.1
-
ns
tr
Rise Time
-
1.8
-
ns
td(off)
Turn-Off Delay Time
-
37
-
ns
tf
Fall Time
-
150
-
ns
Eon
Turn-On Switching Loss
-
80
-
J
Eoff
Turn-Off Switching Loss
-
168
-
J
Ets
Total Switching Loss
-
248
-
J
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
VCC = 400 V, IC = 5 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 5 A,
VGE = 15 V
2
-
18.3
-
nC
-
1.6
-
nC
-
7.9
-
nC
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
o
Collector Current, IC [A]
TC = 25 C
30
Figure 2. Typical Output Characteristics
40
20V
17V
15V
13.5V
10V
VGE = 8V
10
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
12V
30
20
10V
10
VGE = 8V
0
10
Figure 3. Typical Saturation Voltage
Characteristics
0
Common Emitter
VCE = 20V
o
o
TC = 25 C
30
Collector Current, IC [A]
Collector Current, IC [A]
10
30
Common Emitter
VGE = 15V
o
TC = 125 C
20
10
TC = 25 C
o
TC = 125 C
20
10
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
3.0
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
40
0
13.5V
15V
20
0
20V
17V
o
TC = 125 C
12V
Collector Current, IC [A]
40
2.5
10A
2.0
5A
1.5
IC = 2.5A
Common Emitter
o
TC = -40 C
16
12
8
5A
10A
4
IC = 2.5A
1.0
25
50
75
100
o
Case Temperature, TC [ C]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
0
125
3
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
Figure 8. Saturation Voltage vs. VGE
16
12
8
10A
4
5A
IC = 2.5A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
8
10A
4
5A
IC = 2.5A
0
20
0
15
600
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
o
Gate-Emitter Voltage, VGE [V]
500
Capacitance [pF]
20
Figure 10. Gate charge Characteristics
Figure 9. Capacitance Characteristics
o
TC = 25 C
Cies
400
300
Coes
200
Cres
100
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
10
Collector-Emitter Voltage, VCE [V]
300V
200V
6
3
0
1
VCC = 100V
9
30
0
5
10
15
Gate Charge, Qg [nC]
20
Figure 12. Turn-on Characteristics vs.
Gate Resistance
Figure 11. SOA Characteristics
100
10
100s
Switching Time [ns]
Collector Current, Ic [A]
10s
10
1ms
1
10ms
DC
Single Nonrepetitive
0.1
0.01
0.1
o
Pulse T C = 25 C
Curves must be derated
linearly with increase
in temperature
1
10
100
Collector-Emitter Voltage, VCE [V]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
td(on)
tr
1
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
o
TC = 25 C
o
TC = 125 C
0.5
1000
0
4
10
20
30
40
Gate Resistance, RG [ ]
50
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
10
300
tf
Switching Time [ns]
Switching Time [ns]
td(on)
100
td(off)
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
tr
1
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
o
TC = 125 C
10
0.1
0
10
20
30
40
50
2
4
Gate Resistance, RG []
Figure 15. Turn-off Characteristics vs.
Collector Current
10
1000
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
o
TC = 25 C
IC = 5A
o
o
TC = 125 C
tf
100
td(off)
2
4
6
TC = 25 C
Switching Loss [J]
Switching Time [ns]
8
Figure 16. Switching Loss vs. Gate Resistance
800
20
6
Collector Current, IC [A]
8
o
TC = 125 C
Eoff
100
Eon
30
10
0
10
20
30
40
50
Gate Resistance, RG []
Collector Current, IC [A]
Figure 18. Turn off Switching SOA
Characteristics
Figure 17. Switching Loss vs. Collector Current
50
1000
Common Emitter
VGE = 15V, RG = 10
Switching Loss [J]
Collector Current, IC [A]
o
TC = 25 C
Eoff
o
TC = 125 C
100
Eon
10
1
Safe Operating Area
o
10
2
4
6
8
10
1
Collector Current, IC [A]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
VGE = 13.5V, TC = 125 C
0.1
10
100
1000
Collector-Emitter Voltage, VCE [V]
5
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
Typical Performance Characteristics
FGP5N60LS — 600 V, 5 A Field Stop IGBT
Typical Performance Characteristics
Figure 19.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
2
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
single pulse
0.03
-5
10
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
-4
10
-3
-2
10
10
-1
10
0
10
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
6
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
Mechanical Dimensions
Figure 20. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
8
www.fairchildsemi.com
FGP5N60LS — 600 V, 5 A Field Stop IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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CTL™
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and Better™
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®
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®
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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