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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJAF4310
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
•
Audio Power Amplifier
High Current Capability : IC=10A
High Power Dissipation
Wide S.O.A
Complement to FJAF4210
TO-3PF
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
Symbol
TA=25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
10
A
IB
Base Current (DC)
1.5
A
PC
Collector Dissipation (TC=25°C)
80
W
Junction to Case
1.48
°C/W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
RθJC
Electrical Characteristics
Symbol
TA=25°C unless otherwise noted
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞
Emitter-Base Breakdown Voltage
IE=5mA, IC=0
BVEBO
IC=5mA, IE=0
Min.
Typ.
Max.
Units
200
V
140
V
6
V
ICBO
Collector Cut-off Current
VCB=200V, IE=0
10
μA
IEBO
Emitter Cut-off Current
VEB=6V, IC=0
10
μA
hFE
* DC Current Gain
VCE=4V, IC=3A
VCE(sat)
Cob
fT
50
180
Collector-Emitter Saturation Voltage
IC=5A, IB=0.5A
Output Capacitance
VCB=10V, f=1MHz
250
0.5
pF
V
Current Gain Bandwidth Product
VCE=5V, IC=1A
30
MHz
* Pulse Test : PW=20μs
hFE Classification
Classification
R
O
Y
hFE
50 ~ 100
70 ~ 140
90 ~ 180
© 2009 Fairchild Semiconductor Corporation
FJAF4310 Rev. B0
www.fairchildsemi.com
1
FJAF4310 — NPN Epitaxial Silicon Transistor
October 2009
FJAF4310 — NPN Epitaxial Silicon Transistor
Typical Perpormance Characteristics
IB = 300mA
10
IB = 250mA
1000
IB = 200mA
IB = 400mA
VCE = 4 V
9
IB = 150mA
7
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
8
IB = 100mA
6
5
IB = 50mA
4
3
o
Ta = 25 C
o
Ta = 125 C
100
o
Ta = - 25 C
2
IB = 20mA
1
10
0.1
0
0
1
2
3
4
1
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
3.0
1
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
2.5
2.0
1.5
1.0
0.5
IC= 10A
IC= 5A
0.0
0.0
0.4
0.8
1.2
1.6
o
Ta = 125 C
0.1
o
Ta = 25 C
o
Ta = - 25 C
2.0
0.01
0.01
0.1
IB [A], BASE CURRENT
1
10
IC [A], COLLECTOR CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
10
VCE = 4 V
IC [A], COLLECTOR CURRENT
8
t=10ms
IC(Pulse)
t=100ms
Ic [A], COLLECTOR CURRENT
10
6
o
4
2
Ta = 25 C
o
Ta = 125 C
o
Ta = - 25 C
IC(DC)
1
o
0
0.0
0.5
1.0
TC=25 C
Single Pulse
1.5
0.1
0.1
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
10
100
Figure 6. Forward Bias Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
FJAF4310 Rev. B0
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
www.fairchildsemi.com
2
FJAF4310 — NPN Epitaxial Silicon Transistor
Typical Perpormance Characteristics
(Continued)
PC[W], COLLECTOR POWER DISSIPATION
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
© 2009 Fairchild Semiconductor Corporation
FJAF4310 Rev. B0
www.fairchildsemi.com
3
15.70
15.30
9.90
4.60
4.40
3.20
2.80
3.80
3.40
7.75
10.20
9.80
16.70
16.30
26.70
26.30
14.70
14.30
1.93
15.00
14.60
1
2
23.20
22.80
16.70
16.30
2.20
1.80
2.70
2.30
3
2.20
(3X)
1.80
4.20
3.80
3.50
3.10
0.95
(3X)
0.65
5.75
5.15
5.75
5.15
5.70
5.30
2.20
1.80
3.50
3.10
NOTES:
A. THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV2
1.10
0.80
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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