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FJL6920
FJL6920
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1
TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Rating
1700
Units
V
800
V
6
V
IC
Collector Current (DC)
20
A
ICP*
Collector Current (Pulse)
30
A
PC
Collector Dissipation
200
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current
Test Conditions
VCB=1400V, RBE=0
Min.
Typ.
Max.
1
Units
mA
ICBO
Collector Cut-off Current
VCB=800V, IE=0
10
µA
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
1
mA
BVCBO
Collector-Base Breakdown Voltage
IC=500µA, IE=0
1700
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
800
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
6
V
hFE1
hFE2
DC Current Gain
VCE=5V, IC=1A
VCE=5V, IC=11A
8
5.5
VCE(sat)
Collector-Emitter Saturation Voltage
IC=11A, IB=2.75A
3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=11A, IB=2.75A
1.5
V
tSTG*
Storage Time
tF*
Fall Time
VCC=200V, IC=10A, RL=20Ω
IB1=2.0A, IB2= - 4.0A
8.5
0.15
3
µs
0.2
µs
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
RθjC
Parameter
Thermal Resistance, Junction to Case
©2001 Fairchild Semiconductor Corporation
Typ
Max
0.625
Units
°C/W
Rev. A, May 2001
FJL6920
Typical Characteristics
100
16
IB=4.0A
VCE = 5V
12
IB=2.0A
10
IB =1.5A
8
IB =1.0A
6
IB=0.5A
4
IB=0.2A
o
10
Ta = - 25 C
2
0
2
4
6
8
1
0.1
10
1
10
100
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
10
IC = 3 IB
VCE(SAT) [V], SATURATION VOLTAGE
VCE(SAT) [V], SATURATION VOLTAGE
Ta = 25 C
o
0
o
Ta = 125 C
1
o
Ta = 25 C
o
Ta = - 25 C
0.1
0.01
0.1
1
10
IC = 5 IB
o
Ta = 125 C
1
o
Ta = 25 C
o
Ta = - 25 C
0.1
0.01
0.1
100
IC [A], COLLECTOR CURRENT
1
10
100
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
16
VCC = 200V,
IC = 10A, IB1 = 2A
VCE = 5V
tSTG & tF [µs], SWITCHING TIME
14
IC [A], COLLECTOR CURRENT
o
Ta = 125 C
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
14
12
10
8
6
4
2
o
125 C
0
0.0
o
25 C
tSTG
1
tF
0.1
o
- 25 C
0.01
0.2
0.4
0.6
0.8
1.0
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
1.2
1
10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, May 2001
FJL6920
Typical Characteristics (Continued)
100
10
tSTG
1
VCC = 200V,
IB1 = 2A, IB2 = - 4A
10
tSTG & tF [µs], SWITCHING TIME
tSTG & tF [µs], SWITCHING TIME
VCC = 200V,
IC = 10A, IB2 = - 4A
tF
0.1
tSTG
1
tF
0.1
0.01
1
10
1
IB1 [A], FORWARD BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
100
40
IC (Pulse)
t = 100ms
35
IC [A], COLLECTOR CURRENT
IC (DC)
10
1
0.1
o
TC = 25 C
Single Pulse
0.01
1
RB2 = 0, IB1 = 15A
VCC = 30V, L = 200µ H
t = 10ms
t = 1ms
IC [A], COLLECTOR CURRENT
10
10
100
1000
10000
30
25
20
15
VBE(off) = -6V
10
V BE(off) = -3V
5
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
Figure 10. Reverse Bias Safe Operating Area
300
PC [W], POWER DISSIPATION
250
200
150
100
50
0
0
25
50
75
100
125
150
175
O
TC [ C], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
5.20
4.80
20.20
19.80
B
18.30
17.70
1.00
C
6.20
5.80
3.50
3.10
R2.00 C
A
16.60
2.00
12.00
7.40
7.00
0.254 A B
1.20
0.80
9.10
8.90
C
21.62
21.02
0.50
20.20
19.80
R1.00 C
1.70
1.30
1.50
4.05
C
3.20
2.80
2.70
2X
2.30
C
1.25
0.90
0.254 M
A B
3.10
C
2.50
20.50
C
19.50
5.75
5.15
3.70
3.30
1.50
0.85
C
0.50
5.75
5.15
FRONT VIEW
0.15
1.50
SIDE VIEW
5.20
4.80
BOTTOM VIEW
NOTES:
A. PACKAGE REFERENCE: JEDEC TO264
VARIATION AA.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C OUT OF JEDEC STANDARD VALUE.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
F. THIS PACKAGE IS INTENDED ONLY FOR
"FS PKG CODE AR"
G. DRAWING FILE NAME: TO264A03REV2
BACK VIEW
2.60
C
2.40
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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