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FJPF13009
NPN Silicon Transistor
Features
Description
• High-Voltage Capability
• High Switching Speed
The FJPF13009 is a 700 V, 12 A NPN silicon epitaxial
planar transistor. The FJPF13009 is available with multiple hFE bin classes for ease of design use. The
FJPF13009 is designed for high speed switching applications which utilizes the industry standard TO-220F package offering flexibility in design and excellent power
dissipation.
Applications
•
•
•
•
Electronic Ballast
Switching Regulator
Motor Control
Switched Mode Power Supply
1
1.Base
TO-220F
2.Collector
3.Emitter
Ordering Information
Part Number(1)
Top Mark
Package
Packing Method
FJPF13009H1TU
J13009-1
TO-220F 3L
Rail
FJPF13009H2TU
J13009-2
TO-220F 3L
Rail
Notes:
1. The affix “-H1, H2” means the hFE classification. The suffix “-TU” means the tube packing method.
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
www.fairchildsemi.com
FJPF13009 — NPN Silicon Transistor
September 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
12
A
ICP
Collector Current (Pulse)
24
A
IB
Base Current
6
A
PD
Total Device Dissipation (TC = 25°C)
50
W
TJ
Junction Temperature
150
°C
-65 to +150
°C
Storage Temperature Range
TSTG
Note:
2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
VCEO(sus)
IEBO
hFE1
Parameter
IC = 10 mA, IB = 0
Emitter Cut-Off Current
VEB = 9 V, IC = 0
DC Current Gain(3)
hFE2
VCE(sat)
VBE(sat)
Conditions
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation
Voltage(3)
Base-Emitter Saturation Voltage(3)
40
30
IC = 5 A, IB = 1 A
1.0
IC = 8 A, IB = 1.6 A
1.5
IC = 12 A, IB = 3 A
3.0
IC = 5 A, IB = 1 A
1.2
IC = 8 A, IB = 1.6 A
1.6
tON
Turn-On Time
tSTG
Storage Time
VCC = 125 V, IC = 8 A,
IB1 = - IB2 = 1.6 A,
RL = 15.6 Ω
Fall Time
1
6
VCE = 10 V, IC = 0.5 A
Unit
V
8
Current Gain Bandwidth Product
tF
Max
VCE = 5 V, IC = 8 A
VCB = 10 V, f = 0.1 MHz
fT
Typ.
400
VCE = 5 V, IC = 5 A
Output Capacitance
Cob
Min.
180
mA
V
V
pF
4
MHz
1.1
3.0
μs
0.7
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
hFE Classification
Classification
H1
H2
hFE1
8 ~ 17
15 ~ 28
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
www.fairchildsemi.com
2
FJPF13009 — NPN Silicon Transistor
Absolute Maximum Ratings(2)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
hFE, DC CURRENT GAIN
VCE = 5V
10
1
0.1
1
10
10
IC = 3 IB
VBE(sat)
1
0.1
VCE(sat)
0.01
0.1
100
IC[A], COLLECTOR CURRENT
1
10
100
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
10000
1000
tR, tD [ns], TURN ON TIME
Cob[pF], CAPACITANCE
VCC=125V
IC=5IB
100
10
1
0.1
1
10
100
1000
tR
tD, VBE(off)=5V
100
10
0.1
1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
10
100
Figure 4. Turn-On Time
100
10000
10
μs
1000
10
DC
s
1m
tSTG
s
0μ
IC[A], COLLECTOR CURRENT
VCC=125V
IC=5IB
10
tSTG, tF [ns], TURN OFF TIME
1
IC[A], COLLECTOR CURRENT
1
0.1
tF
100
0.1
0.01
1
10
1
100
Figure 5. Turn-Off Time
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 6. Forward Bias Safe Operating Area
www.fairchildsemi.com
3
FJPF13009 — NPN Silicon Transistor
Typical Performance Characteristics
70
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
60
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
10
1
0.1
50
40
30
20
10
0.01
10
0
100
1000
0
10000
50
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
25
o
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 8. Power Derating
www.fairchildsemi.com
4
FJPF13009 — NPN Silicon Transistor
Typical Performance Characteristics (Continued)
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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