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FJV992FMTF

FJV992FMTF

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    SOT23-3

  • 描述:

    晶体管类型:PNP;集射极击穿电压(Vceo):120V;集电极电流(Ic):50mA;功率(Pd):300mW;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib)...

  • 数据手册
  • 价格&库存
FJV992FMTF 数据手册
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJV992 FJV992 Audio Frequency Low Noise Amplifier • Complement to FJV1845 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -120 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 -5 V V IC Collector Current -50 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = -100µA, IE = 0 Min. -120 Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB=0 -120 V BVEBO Emitter-Emitter Breakdown Voltage IE = -10µA, IC=0 -5 V IEBO Emitter-Base Cutoff Current VEB = -6V, IC=0 hFE1 hFE2 DC Current Gain VCE = -6V, IC= -0.1mA VCE = -6V, IC= -1mA VCE (sat) Collector-Emitter Saturation Voltage IC = -10mA, IB= -1mA VBE (on) Base-Emitter On Voltage VCE = -6V, IC= -1mA -0.55 fT Current Gain Bandwidth Product VCE = -6V, IC= -1mA 50 -30 150 200 nA 800 -300 mV -0.65 V MHz Cob Output Capacitance VCB = -30V, IE=0, f=1MHz 3 pF NV Noise Voltage VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 40 mV hFE2 Classification Classification P F E hFE2 200 ~ 400 300 ~ 600 400 ~ 800 Marking 2J P hFE Classification ©2004 Fairchild Semiconductor Corporation Rev. C, August 2004 FJV992 Typical Characteristics IB = -1.2µA -10 IB = -24µA IB = -1.2µA IB = -1.0µA -0.8 IB = -0.8µA -0.6 IB = -0.6µA -0.4 IB = -0.4µA -0.2 IB = -0.2µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -1.0 IB = -16µA -6 IB = -12µA -4 IB = -8µA 0 -20 -40 IB = -4µA -2 IB = 0 0.0 IB = 0 0 -60 -80 -100 0 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -2 -3 -4 -5 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic -1 1000 0 Ta=125 C 0 Ta=25 C 0 Ta=-25 C 100 10 -1E-3 -0.01 IC=10IB VCE(SAT)[V], SATURATION VOLTAGE VCE=-6V hFE, DC CURRENT GAIN IB = -20µA -8 0 -0.1 0 Ta=125 C Ta=25 C 0 Ta=-25 C -0.01 -1E-3 -0.1 IC[mA], COLLECTOR CURRENT -0.01 -0.1 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage VCE=-6V -0.10 IC[A], COLLECTOR CURRENT VBE(SAT)[V], SATURATION VOLTAGE -0.12 IC=10IB 1 0 Ta=-25 C 0 Ta=25 C 0 Ta=125 C 0.1 1E-3 0.01 0.1 IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage ©2004 Fairchild Semiconductor Corporation -0.08 -0.06 0 Ta=125 C 0 0 Ta=-25 C Ta=25 C -0.04 -0.02 -0.00 -0.2 -0.4 -0.6 -0.8 -1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 6. Base-Emitter Voltage Rev. C, August 2004 FJV992 10 Cob [pF], CAPACITANCE IE=0 f = 1MHz 1 0.1 -1 -10 -100 -1000 VCB [V], COLLECTOR-BASE VOLTAGE fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Typical Characteristics (Continued) 1000 VCE = -6V 100 10 1 0.1 1 10 100 IE[mA], COLLECTOR CURRENT Figure 7. Collector Output Capacitance Figure 8. Current Gain Bandwidth Product PC[mW], POWER DISSIPATION 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating ©2004 Fairchild Semiconductor Corporation Rev. C, August 2004 FJV992 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. C, August 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
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