FNA41560T2

FNA41560T2 Motion SPM® 45 Series Features General Description • UL Certified No. E209204 (UL1557) FNA41560T2 is a Motion SPM ® 45 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low Thermal Resistance Using Ceramic Substrate • Low-Loss, Short-Circuit Rated IGBTs • Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout • Built-In NTC Thermistor for Temperature Monitoring • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Single-Grounded Power Supply • Isolation Rating: 2000 Vrms / min. Applications • Motion Control - Home Appliance / Industrial Motor Related Resources • AN-9084 - Smart Power Module, Motion SPM® 45 H V3 Series User’s Guilde • AN-9072 - Smart Power Module Motion SPM® in SPM45H Thermal Performance Information • AN-9071 - Smart Power Module Motion SPM® in SPM45H Mounting Guidance • AN-9760 - PCB Design Guidance for SPM® Figure 1. 3D Package Drawing (Click to Activate 3D Content) Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FNA41560T2 FNA41560T2 SPMAB-C26 Rail 12 ©2016 Semiconductor FNA41560T2 Rev.  1 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series August 2017 FNA41560T2 Motion SPM 45 ® Series Integrated Power Functions • 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions • For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 15. • For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) • Fault signaling: corresponding to UVLO (low-side supply) and SC faults • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View ©2016 Semiconductor FNA41560T2 Rev.1.1 2 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series Pin Descriptions Pin Number Pin Name 1 V TH Thermistor Bias Voltage 2 RTH Series Resistor for the Use of Thermistor (Temperature Detection) 3 P Positive DC-Link Input 4 U Output for U-Phase 5 V Output for V-Phase 6 W Output for W-Phase 7 NU Negative DC-Link Input for U-Phase 8 NV Negative DC-Link Input for V-Phase 9 NW Negative DC-Link Input for W-Phase 10 CSC Shut Down Input for Short-circuit Current Detection Input 11 VFO Fault Output 12 IN(WL) Signal Input for Low-Side W-Phase 13 IN (VL) Signal Input for Low-Side V-Phase 14 IN(UL) Signal Input for Low-Side U-Phase 15 COM Common Supply Ground 16 VDD(L) Low-Side Common Bias Voltage for IC and IGBTs Driving 17 V DD(H) High-Side Common Bias Voltage for IC and IGBTs Driving 18 IN(WH) Signal Input for High-Side W-Phase 19 IN (VH) Signal Input for High-Side V-Phase 20 IN(UH) Signal Input for High-Side U-Phase 21 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 23 V S(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving 24 V B(V) High-Side Bias Voltage for V-Phase IGBT Driving 25 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 26 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving ©2016 Semiconductor FNA41560T2 Rev.1.1 Pin Description 3 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series Internal Equivalent Circuit and Input/Output Pins VTH (1) Thermistor (26) VB(U) (25) VS(U) (24) VB(V) (23) VS(V) RTH (2) P (3) UVB UVS OUT(UH) VVB UVS U(4) VVS (22) VB(W) WVB (21) VS(W) (20) IN(UH) (19) IN(VH) (18) IN(WH) WVS IN(UH) OUT(VH) VVS V (5) IN(VH) IN(WH) (17) VDD(H) (16) VDD(L) (15) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO (10) CSC VDD OUT(WH) COM WVS W(6) VDD OUT(UL) COM NU (7) IN(UL) IN(VL) IN(WL) OUT(VL) NV (8) VFO CSC OUT(WL) NW (9) Figure 3. Internal Block Diagram Note: 1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. 2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions. 3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. ©2016 Semiconductor FNA41560T2 Rev.1.1 4 www.fairchildsemi.com www.onsemi.com unless otherwise specified.) Inverter Part Symbol VPN V PN(Surge) VCES Parameter Conditions Rating Unit Supply Voltage Applied between P - NU , NV, N W 450 V Supply Voltage (Surge) Applied between P - NU , NV, N W 500 V 600 V Collector - Emitter Voltage ± IC Each IGBT Collector Current TC = 25°C, TJ ＜ 150°C 15 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse Width (Note 4) 30 A PC Collector Dissipation TC = 25°C per One Chip (Note 4) 38 W TJ Operating Junction Temperature - 40 ~ 150 °C Rating Unit Control Part Symbol Parameter Conditions VDD Control Supply Voltage Applied between V DD(H), VDD(L) - COM 20 V VBS High - Side Control Bias Voltage Applied between V B(U) - VS(U), VB(V) - VS(V), VB(W) - V S(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), -0.3 ~ V DD + 0.3 IN(UL), IN(VL), IN(WL) - COM V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V DD + 0.3 V IFO Fault Output Current Sink Current at V FO pin VSC Current-Sensing Input Voltage Applied between C SC - COM 1 mA -0.3 ~ VDD + 0.3 V Rating Unit Bootstrap Diode Part Symbol VRRM Parameter Conditions 600 V IF Forward Current Maximum Repetitive Reverse Voltage TC = 25°C, TJ ＜ 150°C 0.5 A IFP Forward Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse Width (Note 4) 2.0 A TJ Operating Junction Temperature -40 ~ 150 °C Rating Unit 400 V -40 ~ 125 °C Total System Symbol VPN(PROT) TC Parameter Conditions Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) VDD = VBS = 13.5 ~ 16.5 V TJ = 150°C, Non-Repetitive, < 2 ms Module Case Operation Temperature See Figure 2 TSTG Storage Temperature V ISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate -40 ~ 125 °C 2000 V rms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to Case Thermal Resistance (Note 5) Conditions Min. Typ. Max. Unit Inverter IGBT Part (per 1 / 6 module) - - 3.20 °C / W Inverter FWDi Part (per 1 / 6 module) - - 4.00 °C / W Note: 4. These values had been made an acquisition by the calculation considered to design factor. 5. For the measurement point of case temperature (TC), please refer to Figure 2. ©2016 Semiconductor FNA41560T2 Rev.1.1 5 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation VDD = VBS = 15 V Voltage VIN = 5 V IC = 15 A, TJ = 25°C - 1.60 2.20 V FWDi Forward Voltage VIN = 0 V IF = 15 A, TJ = 25°C - 2.00 2.60 V Switching Times VPN = 300 V, VDD = VBS = 15 V, IC = 15 A TJ = 25°C VIN = 0 V « 5 V, Inductive Load (Note 6) 0.40 0.80 1.30 ms - 0.20 0.50 ms tC(ON) tOFF tC(OFF) trr LS tON VPN = 300 V, VDD = VBS = 15 V, IC = 15 A TJ = 25°C VIN = 0 V « 5 V, Inductive Load (Note 6) tC(ON) tOFF - 0.85 1.35 ms - 0.25 0.55 ms - 0.10 - ms 0.45 0.85 1.35 ms - 0.25 0.55 ms - 0.90 1.40 ms tC(OFF) - 0.25 0.55 ms trr - 0.15 - ms - - 1 mA ICES Collector - Emitter Leakage VCE = VCES Current Note: 6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% IC 100% IC t rr V CE IC IC V IN V IN t ON tO FF tC(O N) t C(OFF) 10% IC V IN(ON ) V CE 90% IC V IN (OF F) 10% V C E 10% V C E 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition ©2016 Semiconductor FNA41560T2 Rev.1.1 6 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series Electrical Characteristics (TJ = 25°C, unless otherwise specified.) IGBT Turn-on, Eon IGBT Turn-off, Eoff FRD Turn-off, Erec IGBT Turn-on, Eon IGBT Turn-off, Eoff FRD Turn-off, Erec 1400 1200 SWITCHING LOSS ESW [uJ] SWITCHING LOSS ESW [uJ] 1200 FNA41560T2 Motion SPM 45 ® Series Inductive Load, VPN = 300V, VDD=15V, TJ=150℃ Inductive Load, VPN = 300V, VDD=15V, TJ=25℃ 1400 1000 800 600 400 1000 800 600 400 200 200 0 0 0 5 10 0 15 5 10 15 COLLECTOR CURRENT, IC [AMPERES] COLLECTOR CURRENT, IC [AMPERES] Figure 5. Switching Loss Characteristics (Typical) Control Part Symbol Parameter IQDDH Quiescent V DD Supply Current IQDDL IPDDH Operating VDD Supply Current IPDDL Conditions Min. Typ. Max. Unit VDD(H) = 15 V, IN(UH,VH,WH) = 0 V V DD(H) - COM - - 0.10 mA VDD(L) = 15 V, IN(UL,VL, WL) = 0 V V DD(L) - COM - - 2.65 mA VDD(H) = 15 V, fPWM = 20 kHz, duty V DD(H) - COM = 50%, Applied to One PWM Signal Input for High-Side - - 0.15 mA VDD(L) = 15 V, fPWM = 20 kHz, duty V DD(L) - COM = 50%, Applied to One PWM Signal Input for Low-Side - - 4.00 mA IQBS Quiescent V BS Supply Current VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) V S(V), VB(W) - VS(W) - - 0.30 mA IPBS Operating VBS Supply Current VDD = V BS = 15 V, fPWM = 20 kHz, V B(U) - VS(U), VB(V) Duty = 50%, Applied to One PWM V S(V), VB(W) - VS(W) Signal Input for High-Side - - 2.00 mA VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 kW to 5 V Pull-up 4.5 - - V VFOL VSC(ref) VSC = 1 V, VFO Circuit: 4.7 kW to 5 V Pull-up Short Circuit Trip Level UVDDD UVDDR UV BSD Supply Circuit Under-Voltage Protection UV BSR tFOD Fault-Out Pulse Width VIN(ON) ON Threshold Voltage VIN(OFF) RTH OFF Threshold Voltage Resistance of Thermistor VDD = 15 V (Note 7) CSC - COM - - 0.5 V 0.45 0.50 0.55 V Detection level 10.5 - 13.0 V Reset level 11.0 - 13.5 V Detection level 10.0 - 12.5 V Reset level 10.5 - 13.0 V Applied between IN(UH, VH, WH) - COM, IN(UL, VL, WL) - COM 30 - - ms - - 2.6 V 0.8 - - V @TTH = 25°C, (Note 8) - 47 - kW @TTH = 100°C - 2.9 - kW Note: 7. Short-circuit current protection is functioning only at the low-sides. 8. TTH is the temperature of thermistor itselt. To know case temperature (TC), please make the experiment considering your application. ©2016 Semiconductor FNA41560T2 Rev.1.1 7 www.fairchildsemi.com www.onsemi.com 550 R-T Curve in 50℃ ~ 125℃ 500 20 450 16 Resistance[k] Resistance[k] FNA41560T2 Motion SPM 45 ® Series R-T Curve 600 400 350 300 250 12 8 4 200 0 50 60 70 150 80 90 100 110 120 Temperature [℃ ] 100 50 0 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature TTH[℃ ] Figure. 6. R-T Curve of The Built-In Thermistor Bootstrap Diode Part Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V trr Reverse-Recovery Time IF = 0.1 A, dIF / dt = 50 A / ms, TJ = 25°C - 80 - ns Built-In Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 o TC=25 C 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Figure 7. Built-In Bootstrap Diode Characteristic Note: 9. Built-in bootstrap diode includes around 15 Ω resistance characteristic. ©2016 Semiconductor FNA41560T2 Rev.1.1 8 www.fairchildsemi.com www.onsemi.com Symbol Parameter Conditions Min. Typ. Max. Unit - 300 400 V V PN Supply Voltage Applied between P - NU , NV, N W VDD Control Supply Voltage Applied between V DD(H), VDD(L) - COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U) - VS(U), V B(V) - VS(V), VB(W) VS(W) 13.0 15.0 18.5 V -1 - 1 V / ms dVDD / dt, Control Supply Variation dVBS / dt tdead Blanking Time for Preventing Arm-Short For each input signal 1 - - ms fPWM PWM Input Signal -40°C £ TC £ 125°C, -40°C £ TJ £ 150°C - - 20 kHz V SEN Voltage for Current Sensing Applied between N U, NV, N W - COM (Including Surge-Voltage) -4 4 V Minimum Input Pulse Width VDD = VBS = 15 V, IC £ 15 A, Wiring Inductance between NU, V, W and DC Link N < 10nH (Note 10) 0.5 - - ms 0.5 - - PWIN(ON) Minimum Input Pulse P WIN(OFF) Width VDD = VBS = 15 V, IC £ 30 A, Wiring Inductance between NU, V, W and DC Link N < 10nH (Note 10) 1.2 - - 1.2 - - - 40 - 150 PWIN(ON) P WIN(OFF) TJ Junction Temperature ms °C Note: 10. This product might not make response if input pulse width is less than the recommanded value. Allowable Output Current, IOrms [Arms] 15 12 fSW = 5 kHz 9 6 VDC = 300 V, VDD = VBS = 15 V Tj = 150℃ , TC = 125℃ 3 fSW = 15 kHz M.I. = 0.9, P.F. = 0.8 Sinusoidal PWM 0 0 20 40 60 80 100 120 140 Case Temperature, TC [℃ ] Figure 8. Allowable Maximum Output Current Note: 11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition. ©2016 Semiconductor FNA41560T2 Rev.1.1 9 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series Recommended Operating Conditions Parameter Device Flatness Mounting Torque Conditions See Figure 9 Min. Typ. Max. Unit 0 - + 120 mm Mounting Screw: M3 Recommended 0.7 N • m 0.6 0.7 0.8 N•m See Figure 10 Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm - 11.00 - g Weight Figure 9. Flatness Measurement Position Pre - Screwing : 1→2 2 Final Screwing : 2→1 1 Figure 10. Mounting Screws Torque Order Note: 12. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction. 13. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating. ©2016 Semiconductor FNA41560T2 Rev.1.1 10 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series Mechanical Characteristics and Ratings FNA41560T2 Motion SPM 45 ® Series Time Charts of Protective Function Input Signal Protection Circuit State RESET SET RESET UVDDR a1 Control Supply Voltage a6 UVDDD a3 a2 a7 a4 Output Current a5 Fault Output Signal Figure 11. Under-Voltage Protection (Low-Side) a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVDDD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts with a fixed pulse width. a6 : Under voltage reset (UVDDR ). a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b1 b5 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal Figure 12. Under-Voltage Protection (High-Side) b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR ). b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. ©2016 Semiconductor FNA41560T2 Rev.1.1 11 www.fairchildsemi.com www.onsemi.com c6 Protection Circuit State SET Internal IGBT Gate - Emitter Voltage FNA41560T2 Motion SPM 45 ® Series Lower Arms Control Input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of Shunt Resistance Fault Output Signal c5 CR Circuit Time Constant Delay Figure 13. Short-Circuit Protection (Low-Side Operation Only) (with the external sense resistance and RC filter connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : All low-side IGBT’s gate are hard interrupted. c4 : All low-side IGBTs turn OFF. c5 : Fault output operation starts with a fixed pulse width. c6 : Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH. c8 : Normal operation: IGBT ON and carrying current. Input/Output Interface Circuit +5 V (for MCU or Control power) SPM R PF = 10 kΩ IN (UH) , IN (VH) , IN(WH) IN (UL) , IN (VL) , IN(W L) MCU VFO COM Figure 14. Recommended MCU I/O Interface Circuit Note: 14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The input signal section of the Motion SPM 45 product integrates 5 kW(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. ©2016 Semiconductor FNA41560T2 Rev.1.1 12 www.fairchildsemi.com www.onsemi.com CBS CBSC RS (25) VS(U) (20) IN(UH) Gating UH (24) VB(V) CBSC CBS HVIC P (3) VB(U) VS(U) OUT(UH) IN(UH) U (4) VS(U) VB(V) (23) VS(V) VS(V) RS (19) IN(VH) Gating VH (22) VB(W) CBSC CBS M C U RS (18) IN(WH) Gating WH (17) VDD(H) +15 V CPS (21) VS(W) CPS CPS CSPC15 CSP15 IN(VH) OUT(VH) VS(V) V (5) VS(W) IN(WH) CDCS OUT(WH) VDC VDD VS(W) (15) COM M VB(W) W (6) COM LVIC +5 V (16) VDD(L) VDD OUT(UL) RPF NU (7) CSPC05 CSP05 RS (11) VFO Fault CBPF CPF RS (14) IN(UL) RS (13) IN(VL) Gating UL Gating VL RSU VFO RS (12) IN(WL) Gating WL CSC OUT(VL) IN(UL) RF RTH Input Signal for Short-Circuit Protection RSV IN(WL) COM (10) CSC CPS CPS CPS NV (8) IN(VL) OUT(WL) CSC NW (9) RSW (1) VTH (2) RTH THERMISTOR Temp. Monitoring U-Phase Current V-Phase Current W-Phase Current Figure 15. Typical Application Circuit Note: 15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 16. VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA. 17. C SP15 of around seven times larger than bootstrap capacitor CBS is recommended. 18. Input signal is active-HIGH type. There is a 5 kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 Ω , CPS = 1 nF). 19. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 20. In the short-circuit protection circuit, please select the RF CSC time constant in the range 1.5 ~ 2 ms. Do enough evaluaiton on the real system because short-circuit protection time may vary wiring pattern layout and value of the RF CSC time constant. 21. The connection between control GND line and power GND line which includes the NU, N V, NW must be connected to only one point. Please do not connect the control GND to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible. 22. Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible. 23. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 mF between the P and GND pins is recommended. 24. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 25. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals (recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω ). 26. Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 mF R-category ceramic capacitors with good temperature and frequency characteristics in C BSC. ©2016 Semiconductor FNA41560T2 Rev.1.1 13 www.fairchildsemi.com www.onsemi.com FNA41560T2 Motion SPM 45 ® Series (26) VB(U) FNA41560T2 Motion SPM 45 ® Series Detailed Package Outline Drawings (FNA41560T2 ©2016 Semiconductor FNA41560T2 Rev.1.1 14 www.fairchildsemi.com www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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