Gate Drive Optocoupler, 2.5 A
Output Current, High Noise
Immunity
FOD3150A
Description
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The FOD3150A is a 2.5 A Output Current Gate Drive Optocoupler,
capable of driving most 800 V / 20 A IGBTs or MOSFETs. It is ideally
suited for fast switching driving of power IGBTs and MOSFETs used
in motor control inverter applications, and high performance power
system.
It utilizes ON Semiconductor patented coplanar packaging
technology, Optoplanar®, and optimized IC design to achieve high
noise immunity, characterized by high common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light emitting
diode optically coupled to an integrated circuit with a high−speed
driver for push−pull MOSFET output stage.
8
8
1
1
PDIP8 GW
CASE 709AC
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
FUNCTIONAL BLOCK DIAGRAM
Features
• High Noise Immunity characterized by 20 kV/ms minimum Common
•
•
•
•
•
•
•
•
Mode Rejection
Use of P−channel MOSFETs at Output Stage Enables Output Voltage
Swing close to the Supply Rail
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
♦ 500 ns maximum Propagation Delay
♦ 300 ns maximum Pulse Width Distortion
Under Voltage LockOut (UVLO) with Hysteresis
Extended Industrial Temperate Range, −40°C to 100°C Temperature
Range
Safety and Regulatory Approvals
♦ UL1577, 5000 VRMS for 1 minute
♦ DIN EN/IEC60747−5−2
>8.0 mm Clearance and Creepage Distance (Option ‘T’)
This is a Pb−Free Device
1
8 V DD
ANODE
2
7 V O2
CATHODE
3
6 V O1
NC
4
5 V
SS
Note: A 0.1 mF bypass capacitor must be
connected between pins 5 and 8.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Applications
•
•
•
•
NC
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
Table 1. TRUTH TABLE
LED
VDD – VSS “Positive Going” (Turn−on)
VDD – VSS “Negative Going” (Turn−off)
VO
Off
0 V to 30 V
0 V to 30 V
Low
On
0 V to 11 V
0 V to 9.7 V
Low
On
11 V to 14 V
9.7 V to 12.7 V
Transition
On
14 V to 30 V
12.7 V to 30 V
High
© Semiconductor Components Industries, LLC, 2013
September, 2020 − Rev. 1
1
Publication Order Number:
FOD3150A/D
FOD3150A
Table 2. PIN DEFINITIONS
Pin #
Name
1
NC
Description
2
Anode
3
Cathode
4
NC
Not Connected
5
VSS
Negative Supply Voltage
6
VO2
Output Voltage 2 (internally connected to VO1)
7
VO1
Output Voltage 1
8
VDD
Positive Supply Voltage
Not Connected
LED Anode
LED Cathode
Table 3. SAFETY AND INSULATION RATINGS
As per IEC 60747−5−2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Main Voltage < 150 Vrms
I–IV
For Rated Main Voltage < 300 Vrms
I–IV
For Rated Main Voltage < 450 Vrms
I–III
For Rated Main Voltage < 600 Vrms
I–III
Climatic Classification
Max.
Unit
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test with tm = 1 second, Partial
Discharge < 5 pC
1669
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 second, Partial
Discharge < 5 pC
1335
VIORM
Max Working Insulation Voltage
890
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
8
mm
External Clearance
7.4
mm
10.16
mm
Insulation Thickness
0.5
mm
Safety Limit Values – Maximum Values Allowed in the Event of a Failure
Case Temperature
150
Input Current
25
mA
Output Power (Duty Factor ≤ 2.7 %)
250
mW
Insulation Resistance at TS, VIO = 500 V
109
W
External Clearance (for Option T−0.4” Lead Spacing)
TCase
IS,INPUT
PS,OUTPUT
RIO
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2
°C
FOD3150A
Table 4. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
−55 to +125
°C
TOPR
Operating Temperature
−40 to +100
°C
Junction Temperature
−40 to +125
°C
260 for 10 sec
°C
TJ
Lead Wave Solder Temperature
(refer to page 12 for reflow solder profile)
TSOL
IF(AVG)
Average Input Current
25
mA
VR
Reverse Input Voltage
5
V
Peak Output Current
3
A
Supply Voltage
0 to 35
V
Peak Output Voltage
0 to VDD
V
Input Signal Rise and Fall Time
500
ns
PDI
Input Power Dissipation (2) (4)
45
mW
PDO
Output Power Dissipation (3) (4)
250
mW
IO(PEAK)
VDD – VSS
VO(PEAK)
tR(IN), tF(IN)
(1)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum pulse width = 10 ms, maximum duty cycle = 1.1 %.
2. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C.
3. No derating required across temperature range.
4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
Table 5. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Units
−40 to +100
°C
Power Supply
15 to 30
V
IF(ON)
Input Current (ON)
7 to 16
mA
VF(OFF)
Input Voltage (OFF)
0 to 0.8
V
Ambient Operating Temperature
TA
VDD – VSS
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 6. ISOLATION CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at TA = 25°C
Symbol
Parameter
Conditions
Min.
VISO
Input−Output Isolation Voltage
TA = 25°C, R.H.< 50 %, t = 1.0 minute,
II−O ≤ 10 mA, 50 Hz (5) (6)
RISO
Isolation Resistance
VI−O = 500 V (5)
Isolation Capacitance
VI−O = 0 V, Frequency = 1.0 MHz
CISO
Typ.
Max.
5000
Units
VRMS
(5)
1011
W
1
pF
5. Device is considered a two terminal device: pins 2 and 3 are shorted together and pins 5, 6, 7 and 8 are shorted together.
6. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
Table 7. ELECTRICAL CHARACTERISTICS
Symbol
VF
D(VF / TA)
BVR
Parameter
Input Forward Voltage
Conditions
IF = 10 mA
Min.
Typ.
Max.
Units
1.2
1.5
1.8
V
−1.8
Temperature Coefficient of Forward
Voltage
Input Reverse Breakdown Voltage
5
IR = 10 mA
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3
mV/°C
V
FOD3150A
Table 7. ELECTRICAL CHARACTERISTICS
Symbol
Parameter
CIN
Input Capacitance
IOH
High Level Output Current
IOL
VOH
VOL
Conditions
Min.
Typ.
f = 1 MHz, VF = 0 V
(7)
Low Level Output Current (7)
High Level Output Voltage
Low Level Output Voltage
VO = VDD – 3 V
−1.0
VO = VDD – 6 V
−2.0
VO = VSS + 3 V
1.0
VO = VSS + 6 V
2.0
Max.
Units
60
pF
−2.0
A
2.0
A
V
IF = 10 mA, IO = −2.5 A
VDD – 6.25 V
VDD – 2.5 V
IF = 10 mA, IO = −100 mA
VDD – 0.25 V
VDD – 0.1 V
IF = 0 mA, IO = 2.5 A
VSS + 2.5 V
VSS + 6.25 V
IF = 0 mA, IO = 100 mA
VSS + 0.1 V
VSS + 0.25 V
V
IDDH
High Level Supply Current
VO = Open, IF = 7 to 16 mA
2.8
5
mA
IDDL
Low Level Supply Current
VO = Open, VF = 0 to 0.8 V
2.8
5
mA
IO = 0 mA, VO > 5 V
2.3
5.0
mA
IFLH
VFHL
VUVLO+
Threshold Input Current Low to High
Threshold Input Voltage High to Low
Under Voltage Lockout Threshold
VUVLO–
UVLOHYS
IO = 0 mA, VO < 5 V
0.8
V
IF = 1 0mA, VO > 5 V
11
12.7
14
V
IF = 10 mA, VO < 5 V
9.7
11.2
12.7
V
1.5
Under Voltage Lockout Threshold Hysteresis
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Maximum pulse width = 10 ms, maximum duty cycle = 1.1 %.
Table 8. SWITCHING CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C unless otherwise specified.
Symbol
Parameter
Conditions
tPHL
Propagation Delay Time to Logic Low Output
tPLH
Propagation Delay Time to Logic High Output
PWD
Pulse Width Distortion, | tPHL – tPLH |
PDD
(Skew)
IF = 7 mA to 16 mA,
Rg = 20 W, Cg = 10 nF,
f = 10 kHz, Duty Cycle = 50 %
Min.
Typ.
Max.
Units
100
275
500
ns
100
255
500
ns
20
300
ns
350
ns
−350
Propagation Delay Difference Between Any
Two Parts or Channels, (tPHL – tPLH) (8)
tr
Output Rise Time (10% – 90%)
60
ns
tf
Output Fall Time (90% – 10%)
60
ns
tUVLO ON
UVLO Turn On Delay
IF = 10 mA , VO > 5 V
1.6
ms
tUVLO OFF
UVLO Turn Off Delay
IF = 10 mA , VO < 5 V
0.4
ms
| CMH |
Common Mode Transient Immunity at Output
High
TA = 25°C, VDD = 30 V,
IF = 7 to 16 mA, VCM = 2000 V (9)
20
50
kV/ms
| CML |
Common Mode Transient Immunity at Output
Low
TA = 25°C, VDD = 30 V, VF = 0 V,
VCM = 2000 V (10)
20
50
kV/ms
8. The difference between tPHL and tPLH between any two FOD3150A parts under same test conditions.
9. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, Vcm, to assure that the output will remain high (i.e., VO > 15.0 V).
10. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
Vcm, to assure that the output will remain low (i.e., VO < 1.0 V).
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FOD3150A
0.5
Frequency=200 Hz
DutyCycle= 0.2 %
IF =7to16 mA
VDD =15to30 V
VSS =0 V
0.0
−0.5
TA =−40 _C
−1.0
−1.5
T A =25 _C
TA =100 _C
−2.0
−2.5
−3.0
0.0
0.5
1.0
1.5
2.0
0.00
(VOH −VDD)−HIGHOUTPUTVOLTAGEDROP(V)
(V OH −VDD)−OUTPUTHIGHVOLTAGEDROP(V)
TYPICAL PERFORMANCE CURVES
2.5
I OH −OUTPUTHIGHCURRENT(A)
VDD =15 Vto30 V
VSS =0 V
−0.05
IF =7 mAto16 mA
IO =−100 mA
−0.10
−0.15
−0.20
−0.25
−0.30
−40
−20
0
20
40
60
80
100
TA −AMBIENTTEMPERATURE(_C)
Figure 1. Output High Voltage Drop vs. Output High
Current
3
0.25
Frequency=200 Hz
DutyCycle= 99.8 %
V F(OFF) =−3.0 Vto0.8 V
V DD = 15 Vto30 V
V SS =0V
VOL −OUTPUTLOWVOLTAGE(V)
VOL −OUTPUTLOWVOLTAGE(V)
4
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
T A =100_C
TA =25 _C
2
TA =−40 _C
1
VDD =15 Vto30 V
VSS =0 V
VF(OFF) =−3 V to 0.8 V
I O =100 mA
0.20
0.15
0.10
0.05
0.00
0
0.0
0.5
1.0
1.5
2.0
−40
2.5
Figure 3. Output Low Voltage vs. Output Low Current
0
20
40
60
80
100
Figure 4. Output Low Voltage vs. Ambient
Temperature
3.6
3.6
VDD =30 V
VSS =0 V
IF =0 mA (forI DDL )
IF =10 mA (forI DDH )
IF = 10 mA(forI DDH)
IF =0 mA(forI DDL )
VSS =0,T A = 25 _C
IDD −SUPPLYCURRENT(mA)
3.4
IDD −SUPPLYCURRENT(mA)
−20
TA −AMBIENTTEMPERATURE(_C)
IOL −OUTPUTLOWCURRENT(A)
3.2
3.0
IDDH
2.8
IDDL
2.6
3.2
2.8
IDDH
IDDL
2.4
2.4
2.0
2.2
−40
−20
0
20
40
60
80
15
100
TA −AMBIENTTEMPEATURE( _C)
20
25
VDD −SUPPLYVOLTAGE(V)
Figure 6. Supply Current vs. Supply Voltage
Figure 5. Supply Current vs. Ambient Temperature
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5
30
FOD3150A
400
VDD =15 V to30 V
VSS =0 V
Output=Open
3.5
350
t P –PROPAGATIONDELAY(ns)
IFLH −LOWTOHIGHCURRENTTHRESHOLD(mA)
4.0
3.0
2.5
2.0
1.5
1.0
−40
−20
0
20
40
60
80
IF =10 mA
TA =25 _C
Rg=20
,Cg=10 nF
DUTYCYCLE=50%
f=10kHz
300
tPHL
250
tPLH
200
150
100
15
100
18
21
T A −AMBIENTTEMPERATURE(_C)
Figure 7. Low to High Input Current Threshold vs.
Ambient Temperature
500
V DD =30 V,V SS =0 V
Rg =20 ,Cg=10 nF
T A =25 _ C
DUTYCYCLE =50 %
f=10kHz
400
300
tPHL
tPLH
200
100
6
8
10
12
14
400
300
tPHL
tPLH
200
100
−40
16
−20
0
t P –PROPAGATIONDELAY(ns)
t P –PROPAGATIONDELAY(ns)
300
tPHL
tPLH
200
100
0
IF =10 mA
V DD =30 V,V
=0 V
Cg=10 nF
TA =25 _C
DUTYCYCLE=50 %
f=10kHz
400
10
20
30
40
60
80
100
Figure 10. Propagation Delay vs. Ambient
Temperature
500
SS
20
T A –AMBIENTTEMPERATURE(_C)
Figure 9. Propagation Delay vs. LED Forward Current
IF =10 mA
V DD =30 V,V
30
IF =10 mA
V DD =30 V,V SS =0V
,Cg =10 nF
Rg=20
DUTYCYCLE=50 %
f=10kHz
IF –FORWARDLEDCURRENT(mA)
500
27
Figure 8. Propagation Delay vs. Supply Voltage
t P –PROPAGATIONDELAY(ns)
tP –PROPAGATIONDELAY(ns)
500
24
V DD –SUPPLYVOLTAGE(V)
40
400
=0 V
300
t PHL
t PLH
200
100
50
SS
Rg=20
TA =25 _C
DUTYCYCLE=50 %
f=10kHz
0
20
40
60
80
100
C g −LOADCAPACITANCE(nF)
Rg −SERIESLOADRESISTANCE(Ω)
Figure 11. Propagation Delay vs. Series Load
Resistance
Figure 12. Propagation Delay vs. Load Capacitance
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FOD3150A
35
100
T =25 _C
A
V
DD
= 30 V
IF −FORWARDCURRENT(mA)
30
V –OUTPUTVOLTAGE(V)
25
20
O
15
10
5
10
TA =100 _C
1
T A =−40_C
0.1
TA =25 _C
0.01
0.001
0.6
0
1
2
3
4
5
1.0
1.2
1.4
1.6
1.8
Figure 14. Input Forward Current vs. Forward Voltage
I –FORWARDLEDCURRENT(mA)
F
Figure 13. Transfer Characteristics
14
(12.75,12.80)
12
(11.25,11.30)
10
8
6
O
V –OUTPUTVOLTAGE(V)
0.8
VF −FORWARDVOLTAGE(V)
0
4
2
(11.20,0.00)
0
0
5
(V
DD
(12.70,0.00)
10
−V
15
20
)–SUPPLYVOLTAGE(V)
SS
Figure 15. Under Voltage Lockout
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FOD3150A
TEST CIRCUIT
+
+
C1
0.1 mF
C2
47 mF
Power Supply
VDD = 15 V to 30 V
Pulse Generator
PW = 4.99 ms
Period = 5 ms
ROUT = 50
1
8
2
7
3
6
Pulse−In
R2
100
Iol
+
D1
VOL
LED−IFmon
+
C3
0.1 mF
C4
47 mF
Power Supply
V=4V
5
4
R1
100
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8 %
VDD = 15 V to 30 V
VSS = 0 V
VF(OFF) = −3.0 V to 0.8 V
Figure 16. IOL Test Circuit
+
+
C1
0.1 mF
C2
47 mF
Power Supply
VDD = 15 V to 30 V
Pulse Generator
PW = 10 ms
Period = 5 ms
ROUT = 50
1
8
2
7
Pulse−In
R2
100
+
+
C3
0.1 mF
Ioh
VOH
LED−IFmon
5
4
R1
100
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2 %
VDD = 15 V to 30 V
V SS = 0 V
I F = 7 mA to 16 mA
Figure 17. IOH Test Circuit
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D1
Current
Probe
To Scope
Power Supply
V=4V
–
6
3
C4
47 mF
FOD3150A
1
8
2
7
0.1 mF
IF = 7 to 16 mA
VDD = 15 to 30 V
+
–
VDD = 15 to 30 V
VO
6
3
+
–
100 mA
5
4
Figure 18. VOH Test Circuit
1
8
2
7
3
6
4
5
100 mA
0.1 mF
VO
Figure 19. VOL Test Circuit
1
8
2
7
0.1 mF
IF = 7 to 16 mA
3
6
4
5
+
–
VDD = 30 V
+
–
VDD = 30 V
VO
Figure 20. IDDH Test Circuit
+
–
1
8
2
7
0.1 mF
VF = 0 to 0.8 V
3
6
4
5
Figure 21. IDDL Test Circuit
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VO
FOD3150A
IF
1
8
2
7
3
6
4
5
0.1 mF
+
–
VDD = 15 to 30 V
+
–
VDD = 15 to 30 V
VO > 5 V
Figure 22. IFLH Test Circuit
+
–
1
8
2
7
0.1 mF
VF = 0 to 0.8 V
3
6
4
5
VO
Figure 23. VFHL Test Circuit
1
8
2
7
0.1 ∝F
IF = 10 mA
3
6
4
5
Figure 24. UVLO Test Circuit
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VO = 5 V
+
–
15 V or 30 V
VDD Ramp
FOD3150A
1
8
2
7
VO
6
Rg = 20 W
0.1 mF
+
–
3
Probe
F = 10 kHz
DC = 50 %
+
–
VDD = 15 to 30 V
Cg = 10 nF
50 W
4
5
IF
tr
tf
90 %
50 %
VOUT
10 %
tPHL
tPLH
Figure 25. tPHL, tPLH, tR and tF Test Circuit and Waveforms
IF
1
8
2
7
A
B
5V
+
–
3
6
4
5
0.1 mF
+
–
VDD = 30V
VO
+–
VCM = 2,000 V
VCM
0V
Dt
VOH
VO
Switch at A: I F = 10 mA
VO
VOL
Switch at B: IF = 0 mA
Figure 26. CMR Test Circuit and Waveforms
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FOD3150A
REFLOW PROFILE
245 C, 10–30 s
300
260 C peak
Temperature (ºC)
250
200
150
Time above 183 C,