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FOD3184
3A 输出电流,高速 MOSFET/IGBT
栅极驱动光耦合器
特性
应用
■ 具有 50 kV/µs (典型值)共模抑制特点的高抗噪能力
■ 等离子显示屏
■
■
■
■
■
■
■
■
■
@ VCM = 2,000V
保证工作温度范围为 -40°C 至 +100°C
中等功率 MOSFET/IGBT 的 3A 峰值输出电流
快速开关速度
– 210 ns (最大值)传播延迟
– 65 ns max 脉宽失真度
快速输出上升 / 下降时间
– 提供较低的动态功耗
250 kHZ 最大开关速度
宽 VDD 工作范围 15 V 至 30 V
使用输出级的P沟道MOSFET可使输出电压摆幅接近供
电轨 (轨到轨输出)
带滞回的欠压锁定保护 (UVLO) - 优化用于驱动 IGBT
安全和法规认证
– UL1577, 5,000 VACRMS, 1 分钟。
– DIN EN/IEC 60747-5-2, 1,414 峰值工作绝缘电压
• 最小爬电距离为 8.0 mm
• 最小绝缘厚度为 8 mm 至 16 mm
(选项 TV 或 TSV)
• 最小绝缘厚度为 0.5 mm
功能框图
■ 高性能 DC/DC 转换器
■ 高性能开关模式电源
■ 高性能不间断电源
■ 隔离功率 MOSFET/IGBT 栅极驱动
说明
FOD3184 是具有 3A 输出电流,高速 MOSFET/IGBT 栅
极驱动光耦。它由铝砷化镓 (AlGaAs) 发光二极管组成,该
二极管与具有 PMOS 和 NMOS 输出功率晶体管集成电路
功率级的 CMOS 感测器进行光耦合。非常适用于等离子显
示屏 (PDPs) ,电动机用逆变器控制,以及高性能 DC/
DC 转换器中采用的高频功率驱动 MOSFETS/IGBT。
该器件封装在 8 引脚双列直插式外壳内,兼容 260°C 回流
焊接工艺,符合无铅焊接的规定。
封装外形
NC 1
8 VDD
ANODE 2
7 VO2
8
8
1
1
CATHODE 3
6 VO1
NC 4
5 VSS
8
注意:
0.1 µF 旁路电容必须连接在引脚 5 和 8 之间。
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
8
1
1
www.fairchildsemi.com
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
2014 年 2 月
LED
VDD – VSS“ 正向 ” (导通)
VDD – VSS“ 负向 ” (关断)
VO
关
0V 至 30 V
0V 至 30 V
低
导通
0V 至 11.5 V
0V 至 10 V
低
导通
11.5 V 至 13.5 V
10 V 至 12 V
转换
导通
13.5 V 至 30 V
12 V 至 30 V
高
引脚定义
引脚号
名称
1
NC
说明
未连接
2
阳极
LED 阳极
3
阴极
LED 阴极
4
NC
未连接
5
VSS
负极电源电压
6
VO2
输出电压 2 (内部连接至 VO1)
7
VO1
输出电压 1
8
VDD
正向电源电压
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
2
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
真值表
根据 DIN EN/IEC 60747-5-2。 此光电耦合器仅适用于安全极限数据之内的 “ 安全电气绝缘 ”。通过保护性电路确保各项
安全标准达标。
符号
参数
最小值
典型值
最大值
单位
安装标准符合 DIN VDE 0110/1.89 表 1
对于额定市电电压 < 150 Vrms
I–IV
对于额定市电电压 < 300 Vrms
I–IV
对于额定市电电压 < 450 Vrms
I–III
对于额定市电电压 < 600 Vrms
I–III
对于额定市电电压 < 1000 Vrms (选项 T、 TS)
I–III
40/100/21
气候分类
2
污染等级 (DIN VDE 0110/1.89)
CTI
相比漏电起痕指数
175
输入至输出测试电压,方法 b,
VIORM x 1.875 = VPR, 100% 生产测试测试
tm = 1 秒,局部放电 < 5pC
2651
输入至输出测试电压,方法 a,
VIORM x 1.5 = VPR,类型和样品测试,
tm = 60 s,局部放电 < 5 pC
2121
VIORM
最大工作绝缘电压
1,414
Vpeak
VIOTM
最高允许过电压
6000
Vpeak
外部爬电距离
8
mm
外部绝缘间隙
7.4
mm
10.16
mm
0.5
mm
VPR
外部绝缘间隙 (对于选项 T 或 TS - 0.4” 引线间距)
绝缘厚度
安全极限值 – 发生故障时允许的最大值
T 外壳
壳体温度
150
°C
IS,INPUT
输入电流
25
mA
PS,OUTPUT
输出功率
250
mW
109
RIO
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
TS, VIO = 500 V 时的绝缘阻抗
www.fairchildsemi.com
3
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
安全性和绝缘标准
应力超过绝对最大额定值,可能会损坏器件。在超出推荐的工作条件和应力的情况下,该器件可能无法正常工作,所以
不建议让器件在这些条件下工作。此外,过度暴露在高于推荐的工作条件的应力下,会影响器件的可靠性。绝对最大额
定值仅是应力规格值。
符号
参数
TSTG
TOPR
TJ
TSOL
数值
单位
存储温度
-40 至 +125
°C
工作温度
-40 至 +100
°C
结温
-40 至 +125
°C
260 for 10 sec.
°C
引脚焊接温度 – 波峰焊
(请参阅回流焊温度曲线,第 22 页 )
IF(AVG)
平均输入电流 (1)
25
mA
IF(tr, tf)
LED 电流上升 / 下降最小斜率
250
ns
VR
IOH(PEAK)
IOL(PEAK)
5
V
“高”
峰值输出电流 (2)
3
A
“低”
峰值输出电流 (2)
3
A
反向输入电压
VDD – VSS
电源电压
-0.5 至 35
V
VO(PEAK)
输出电压
0 至 VDD
V
PO
输出功耗 (3)
250
mW
PD
总功耗 (3)
295
mW
推荐工作条件
推荐的操作条件表明确了器件的真实工作条件。指定推荐的工作条件,以确保器件的最佳性能达到数据表中的规格。
飞兆不建议超出额定或依照绝对最大额定值进行设计。
符号
参数
数值
单位
VDD – VSS
电源
15 至 30
V
IF(ON)
输入电流 (ON)
10 至 16
mA
VF(OFF)
输入电压 (OFF)
-3.0 至 0.8
V
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
4
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
绝对最大额定值 (除非另有规定, TA = 25°C)
应用于所有推荐的条件;除非另有规定,典型值测量条件为 VDD = 30 V, VSS = 0 V, TA = 25°C。
符号
IOH
参数
高电平输出电流
测试条件
最小值
VOH = (VDD – VSS – 1 V)
典型值
最大值
单位
-0.9
-0.5
A
VOH = (VDD – VSS – 6 V)
IOL
低电平输出电流
VOH
高级输出电压 (4)(5)
VOL
低电平输出电压 (4)(5)
-2.5
VOL = (VDD – VSS + 1 V)
0.5
VOL = (VDD – VSS + 6 V)
2.5
1
A
IO = -100 mA,IF = 10 mA VDD – 0.5
IO = -2.5A, IF = 10 mA
V
VDD – 7
VSS + 0.5
IO = 100mA, IF = 0 mA
V
VSS + 7
IO = 2.5A, IF = 0 mA
输出开路,
IF = 10 至 16 mA
2.6
3.5
mA
低电平电源电流
输出开,
VF = -3.0 至 0.8 V
2.5
3.5
mA
IFLH
阈值输入电流 低电平至高电平
IO = 0 mA, VO > 5 V
3.0
7.5
mA
VFHL
阈值输入电压高电平至低电平
IO = 0 mA, VO < 5 V
0.8
输入正向电压
IF = 10 mA
1.1
1.43
正向电压温度系数
IF = 10 mA
VO > 5 V, IF = 10 mA
11.5
13.0
13.5
V
VO < 5 V, IF = 10 mA
10.0
11.5
12.0
V
IDDH
高电平电源电流
IDDL
VF
VF / TA
VUVLO+
欠压锁定阈值
VUVLO–
CIN
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
反向击穿输入电压
IR = 10 µA
输入电容
f = 1 MHz, VF = 0 V
1.8
V
-1.5
UVLOHYST UVLO 滞回
BVR
V
mV/°C
1.5
V
25
pF
5
V
www.fairchildsemi.com
5
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
光电特性 (DC)
应用于所有推荐的条件;除非另有规定,典型值测量条件为 VDD = 30 V, VSS = 0 V, TA = 25°C。
符号
参数
tPLH
传播延迟时间到高输出电平 (6)
tPHL
传播延迟时间到低输出电平 (6)
PWD
脉宽失真度 (7)
PDD
(tPHL – tPLH)
任何两个部件 (8)
tr
上升时间
tf
下降时间
tUVLO ON
UVLO 导通延迟
tUVLO OFF
UVLO 关断延迟
| CMH |
| CML |
最小值 典型值 *
测试条件
之间的传播延迟差
IF = 10 mA,
Rg = 10 ,
f = 250 kHz,
占空比 = 50%,
Cg = 10 nF
最大值
单位
50
120
210
ns
50
145
210
ns
35
65
ns
90
ns
-90
38
ns
24
ns
2.0
µs
CL = 10 nF,
Rg = 10
0.3
µs
输出高电平共模瞬态
抑制性 (9) (10)
TA = +25°C,
If = 10 mA 至 16 mA,
VCM = 2 kV,
VDD = 30 V
35
50
kV/µs
输出低电平共模瞬态
抑制性 (9) (11)
TA = +25°C,
Vf = 0 V,
VCM = 2 kV,
VDD = 30 V
35
50
kV/µs
*TA = 25°C 时的典型值
绝缘特性
典型值 *
符号
参数
测试条件
最小值
VISO
耐受绝缘电压 (12) (13)
TA = 25°C,
R.H. < 50%, t = 1 分钟,
II-O ≤ 10 µA
5000
RI-O
电阻 (输入至输出) (13)
VI-O = 500 V
1011
电容 (输入至输出)
频率 = 1 MHz
1
pF
CI-O
最大值
单位
Vrms
*TA = 25°C 时的典型值
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
6
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
开关特性
2.
最大脉冲宽度 = 10 µs。
3
空气温度超过 +79°C 时,线性降额的速度为 5.73 mA/°C。
4.
在该测试中, VOH 采用 dc 负载电流 100 mA 测得。驱动电容负载时,随着 IOH 接近零安培, VOH 将接近 VDD。
5.
最大脉宽 = 1 ms,最大占空比 = 20%。
6.
tPHL 传播延迟的测量是从50%的输入脉冲下降沿至50%的VO 信号下降沿。tPLH 传播延迟的测量是从50%的输入脉冲
上升沿至 50% 的 VO 信号上升沿。
7.
对于任何给定器件, PWD 定义为 | tPHL – tPLH |。
8.
在相同工作条件下 (具有相同负载),任何两个 FOD3184 部件间 tPHL 和 tPLH 间的差异。
9.
引脚 1 和 4 需要连接至 LED 公共端。
10. 高电平状态下的共模瞬变抑制是共模脉冲 VCM 的最大容许 dVCM/dt,从而确保输出将保持高电平状态
(例如, VO > 15 V)。
11. 低电平状态下的共模瞬变抑制是共模脉冲 VCM 的最大容许 dVCM/dt,从而确保输出将保持低电平状态
(例如, VO < 1.0 V)。
12. 根据 UL 1577,每个光电耦合器都通过应用绝缘测试电压 > 1 秒钟的 6000 Vrms、 60 Hz
(泄露检测电流限制 II-O < 10 µA)得到验证。
13. 器件属于两极器件:输入端引脚短接,输出端引脚短接。
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
7
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
注意:
1. 空气温度超过 +79°C 时,线性降额的速度为 0.37 mA/°C。
Fig. 2 Output High Voltage Drop vs. Ambient Temperatur
0.5
(VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V)
(VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V)
Fig. 1 Output High Voltage Drop vs. Output High Current
Frequency = 200Hz
Duty Cycle = 0.1%
IF = 10mA to 16mA
VDD = 15V to 30V
VSS = 0V
0
-0.5
-1.0
TA = -40°C
-1.5
TA = 25°C
-2.0
TA =100°C
-2.5
-3.-0
-3.5
0
0.5
1.0
1.5
2.0
2.5
0.00
-0.05
VDD = 15V to 30V
VSS = 0V
IF = 10mA to 16mA
IO = -100mA
-0.10
-0.15
-0.20
-0.25
-0.30
-40
-20
Fig. 3 Output High Current vs. Ambient Temperature
40
60
80
100
8
Frequency = 200Hz
Duty Cycle = 0.2%
IF = 10mA to 16mA
VDD = 15V to 30V
6
IOH – OUTPUT HIGH CURRENT (A)
IOH – OUTPUT HIGH CURRENT (A)
20
Fig. 4 Output High Current vs. Ambient Temperature
8
VO = 6V
4
VO = 3V
2
0
-40
-20
0
20
40
60
80
6
VO = 6V
4
VO = 3V
2
0
-40
100
Frequency = 100Hz
Duty Cycle = 0.5%
IF = 10mA to 16mA
VDD = 15V to 30V
-20
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Output Low Voltage vs. Output High Current
Fig. 6 Output Low Voltage vs. Ambient Temperature
4
0.00
Frequency = 200Hz
Duty Cycle = 99.9%
VF(off) = 0.8V
VDD = 15V to 30V
VSS = 0V
3
TA =100°C
VOL – OUTPUT LOW VOLTAGE (V)
VOL – OUTPUT LOW VOLTAGE (V)
0
TA – AMBIENT TEMPERATURE (°C)
IOH – OUTPUT HIGH CURRENT (A)
TA = 25°C
2
TA = -40°C
1
0.5
1.0
1.5
2.0
2.5
IOH – OUTPUT HIGH CURRENT (A)
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
VDD = 15V to 30V
VSS = 0V
VF = -3V to 0.8V
IO = -100mA
-0.10
-0.15
-0.20
-0.25
-0.30
-40
0
0
-0.05
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
www.fairchildsemi.com
8
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
典型性能曲线
Fig. 7 Output Low Current vs. Ambient Temperature
Fig. 8 Output Low Current vs. Ambient Temperature
8
Frequency = 200Hz
Duty Cycle = 99.8%
VF = 0.8V
VDD = 15V to 30V
6
IOL – OUTPUT LOW CURRENT (A)
IOL – OUTPUT LOW CURRENT (A)
8
VO = 6V
4
VO = 3V
2
0
-40
-20
0
20
40
60
80
Frequency = 100Hz
Duty Cycle = 99.5%
VF = 0.8V
VDD = 15V to 30V
6
VO = 6V
4
VO = 3V
2
0
-40
100
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 10 Supply Current vs. Supply Voltage
Fig. 9 Supply Current vs. Ambient Temperature
3.6
3.6
IDD – SUPPLY CURRENT (mA)
VDD = 15V to 30V
VSS = 0V
IF = 0mA (for IDDL)
IF = 10mA (for IDDH)
3.4
IDD – SUPPLY CURRENT (mA)
-20
3.2
IDDH(30V)
3.0
IDDL(30V)
2.8
IDDH(15V)
2.6
IDDL(15V)
IF = 0mA (for IDDL)
IF = 10mA (for IDDH)
VSS = 0V
TA = 25°C
3.2
IDDH
2.8
IDDL
2.4
2.4
2.2
-40
2.0
-20
0
20
40
60
80
15
100
20
Fig. 11 Low-to-High Input Current Threshold
vs. Ambient Temperature
3.4
30
Fig. 12 Propagation Delay vs. Supply Voltage
250
VDD = 15V to 30V
VSS = 0V
Output = Open
tP – PROPAGATION DELAY (ns)
IFLH – LOW-to-HIGH INPUT CURRENT THRESHOLD (mA)
3.6
25
VDD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
3.2
3.0
2.8
2.6
IF = 10mA to 16mA
TA = 25°C
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
150
tPHL
tPLH
100
2.4
2.2
-40
50
-20
0
20
40
60
80
15
100
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
18
21
24
27
30
VDD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
www.fairchildsemi.com
9
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
典型性能曲线 (续)
Fig. 13 Propagation Delay vs. LED Forward Current
Fig. 14 Propagation Delay vs. Ambient Temperature
450
VDD = 15V to 30V
TA = 25°C
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
tP – PROPAGATION DELAY (ns)
tP – PROPAGATION DELAY (ns)
250
150
tPHL
tPLH
100
IF = 10mA to 16mA
VDD = 15V to 30V
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
350
250
tPHL
150
tPLH
50
6
8
10
12
14
50
-40
18
IF – FORWARD LED CURRENT (mA)
tP – PROPAGATION DELAY (ns)
tP – PROPAGATION DELAY (ns)
450
250
150
20
40
60
100
tPHL
IF = 10mA to 16mA
VDD = 15V to 30V
RG = 10Ω
Duty Cycle = 50%
Frequency = 250kHz
350
250
150
tPHL
tPLH
tPLH
50
50
0
10
20
30
40
50
0
RG – SERIES LOAD RESISTANCE (Ω)
IF – FORWARE CURRENT (mA)
20
15
10
5
0
0.5
1.0
1.5
2.0
80
100
10
1
TA =100°C
0.1
-40°C
25°C
0.01
0.001
0.6
2.5
IF – FORWARD LED CURRENT (mA)
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
60
Fig. 18 Input Forward Current vs. Forward Voltage
25
0
40
100
VDD = 30V
TA = 25°C
30
20
CG – SERIES LOAD CAPACITANCE (nF)
Fig. 17 Transfer Characteristics
35
VO – OUTPUT VOLTAGE (V)
80
Fig. 16 Propagation Delay vs. Series Load Capacitance
IF = 10mA to 16mA
VDD = 15V to 30V
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
350
0
TA – AMBIENT TEMPERATURE (°C)
Fig. 15 Propagation Delay vs. Series Load Resistance
450
-20
0.8
1.0
1.2
1.4
1.6
1.8
VR – FORWARE VOLTAGE (V)
www.fairchildsemi.com
10
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
典型性能曲线 (续)
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
典型性能曲线 (续)
Fig. 19 Under Voltage Lockout
20
VO – OUTPUT VOLTAGE (V)
18
16
14
(13.00V)
12
10
8
6
4
2
(11.40V)
0
0
5
10
15
20
(VDD – VSS) – SUPPLY VOLTAGE (V)
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
11
Power Supply
+
+
C1
0.1µF
VDD = 15V to 30V
C2
47µF
Pulse Generator
PW = 4.99ms
Period = 5ms
ROUT = 50Ω
1
8
2
7
3
6
Pulse-In
Iol
R2
100Ω
D1
VOL
LED-IFmon
4
Power Supply
+
+
C3
0.1µF
V = 6V
C4
47µF
5
R1
100Ω
To Scope
Test Conditions:
Frequency = 200Hz
Duty Cycle = 99.8%
VDD = 15V to 30V
VSS = 0V
VF(OFF) = -3.0V to 0.8V
图 20. IOL 测试电路
Power Supply
+
+
C1
0.1µF
VDD = 15V to 30V
C2
47µF
Pulse Generator
PW = 10µs
Period = 5ms
ROUT = 50Ω
1
8
2
7
Pulse-In
+
+
C3
0.1µF
Ioh
R2
100Ω
3
6
4
5
Power Supply
V = 6V
–
VOH
LED-IFmon
C4
47µF
D1
Current
Probe
To Scope
R1
100Ω
Test Conditions:
Frequency = 200Hz
Duty Cycle = 0.2%
VDD = 15V to 30V
VSS = 0V
IF = 10mA to 16mA
图 21. IOH 测试电路
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
12
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
测试电路
1
8
2
7
0.1µF
+
–
IF = 10 to 16mA
VO
6
3
VDD = 15 to 30V
100mA
5
4
图 22. VOH 测试电路
1
8
2
7
100mA
+
–
0.1µF
3
6
4
5
VDD = 15 to 30V
VO
图 23. VOL 测试电路
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
13
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
测试电路 (续)
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
测试电路 (续)
1
8
2
7
0.1F
IF = 10 to 16mA
3
6
4
5
+
–
VDD = 30V
+
–
VDD = 30V
VO
图 24. IDDH 测试电路
+
–
1
8
2
7
0.1F
VF = -3.0 to 0.8V
3
6
4
5
VO
图 25. IDDL 测试电路
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
14
IF
1
8
2
7
3
6
4
5
0.1F
+
–
VDD = 15 to 30V
+
–
VDD = 15 to 30V
VO > 5V
图 26. IFLH 测试电路
+
–
1
8
2
7
0.1F
VF = –3.0 to 0.8V
3
6
4
5
VO
图 27. IFHL 测试电路
1
8
2
7
0.1F
+
–
IF = 10mA
3
6
4
5
VO = 5V
15V or 30V
VDD Ramp
图 28. UVLO 测试电路
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
15
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
测试电路 (续)
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
测试电路 (续)
1
8
2
7
0.1F
+
–
Probe
F = 250kHz
DC = 50%
3
6
4
5
VO
+
–
VDD = 15 to 30V
+
–
VDD = 30V
Rg = 10
Cg = 10nF
50
IF
tr
tf
90%
50%
VOUT
10%
tPLH
tPHL
图 29. tPHL、 tPLH、 tr 和 tf 测试电路和波形
IF
1
8
2
7
A
0.1F
B
5V
+
–
3
6
4
5
VO
+–
VCM = 2,000V
VCM
0V
Dt
VO
VOH
Switch at A: IF = 10mA
VO
VOL
Switch at B: IF = 0mA
图 30. CMR 测试电路与波形
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
16
器件编号
封装
包装方法
FOD3184
DIP 8 引脚
管装 (每管 50 个)
FOD3184S
SMT 8 引脚 (弯曲引线)
管装 (每管 50 个)
FOD3184SD
SMT 8 引脚 (弯曲引线)
编卷带包装 (每卷 1000 单位)
FOD3184V
DIP 8 引脚、 DIN EN/IEC 60747-5-2 选项
管装 (每管 50 个)
FOD3184SV
SMT 8 引脚 (弯曲引线)、 DIN EN/IEC 60747-5-2 选项
管装 (每管 50 个)
FOD3184SDV
SMT 8 引脚 (弯曲引线)、 DIN EN/IEC 60747-5-2 选项
编卷带包装 (每卷 1000 单位)
FOD3184TV
DIP 8 引脚、 0.4” 引线间距、 DIN EN/IEC 60747-5-2 选项
管装 (每管 50 个)
FOD3184TSV
SMT 8 引脚、 0.4” 引线间距、 DIN EN/IEC 60747-5-2 选项
管装 (每管 50 个)
FOD3184TSR2V SMT 8 引脚、 0.4” 引线间距、 DIN EN/IEC 60747-5-2 选项
卷带和卷盘 (每卷 700 装)
标识信息
1
3184
XX YY B
V
3
2
6
5
4
定义
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
1
飞兆徽标
2
器件号
3
VDE 标记 (注:仅订购 DIN EN/IEC 60747-5-2 选项的器
件才显示 – 见订单条目表)
4
两位数年份代码,如 “11”
5
两位数,代表工作周从 “01” 到 “53”
6
装配封装码
www.fairchildsemi.com
17
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
订购信息
D0
P0
t
K0
P2
E
F
A0
W1
d
P
User Direction of Feed
符号
W
D1
单位 mm
说明
带宽
16.0 ± 0.3
t
带厚
0.30 ± 0.05
P0
孔距
4.0 ± 0.1
D0
孔径
1.55 ± 0.05
E
孔位置
1.75 ± 0.10
F
Pocket 位置
7.5 ± 0.1
2.0 ± 0.1
P2
P
Pocket 间距
12.0 ± 0.1
A0
Pocket 尺寸
10.30 ±0.20
B0
10.30 ±0.20
K0
4.90 ±0.20
W1
覆带宽
13.2 ± 0.2
D
覆带厚
0.1 (最大值)
R
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
W
B0
组件旋转或斜度最大值
10°
最小弯曲半径
30
18
www.fairchildsemi.com
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
承载带规格 – 选项 S
D0
P0
t
K0
P2
E
F
A0
W1
d
P
User Direction of Feed
符号
D1
单位 mm
说明
W
带宽
24.0 ± 0.3
t
带厚
0.40 ± 0.1
P0
孔距
4.0 ± 0.1
D0
孔径
1.55 ± 0.05
E
孔位置
1.75 ± 0.10
F
Pocket 位置
11.5 ± 0.1
2.0 ± 0.1
P2
P
Pocket 间距
16.0 ± 0.1
A0
Pocket 尺寸
12.80 ± 0.1
B0
10.35 ± 0.1
K0
5.7 ±0.1
W1
覆带宽
21.0 ± 0.1
D
覆带厚
0.1 (最大值)
R
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
W
B0
组件旋转或斜度最大值
10°
最小弯曲半径
30
19
www.fairchildsemi.com
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
承载带规格 – 选项 TS
FOD3184 — 3A 输出电流,高速 MOSFET/IGBT 栅极驱动光耦合器
回流焊数据
Temperature (C)
Max. Ramp-up Rate = 3°C/S
TP
Max. Ramp-down Rate = 6°C/S
260
240
TL
220
Tsmax
200
180
Preheat Area
160
Tsmin
140
120
100
80
60
40
20
0
120
tP
tL
ts
240
360
Time 25°C to Peak
Time (seconds)
特征
无铅装配数据
最低温度 (Tsmin)
150°C
最高温度 (Tsmax)
200°C
时间 (tS) 从 (Tsmin 至 Tsmax)
60 至 120 秒
斜升率 (tL to tP)
最高 3°C/ 秒
217°C
液态温度 (TL)
保持在 (tL) 以上的时间 (tL)
60 至 150 秒
260°C +0°C / –5°C
体封装温度峰值
时间 (tP), 260°C 的 5°C 内
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
30 秒
斜降率 (TP to TL)
最高 6°C/ 秒
25°C 至峰值温度的时间
最多 8 分钟
www.fairchildsemi.com
20
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