FOD8173TR2

FOD8173, FOD8173T 3.3 V/5 V, 20 Mbit/sec, Logic Gate Optocoupler in Stretched Body SOP 6-Pin www.onsemi.com Description The FOD8173 series packaged in a stretched body 6−pin small outline plastic package, consists of an aluminum gallium arsenide (AlGaAs) light emitting diode and a CMOS detector IC comprises an integrated photodiode, a high speed transimpedance amplifier and a voltage comparator with a totem−pole output driver. The electrical and switching characteristics are guaranteed over the extended industrial temperature range of −40°C to 100°C and a VDD range of 3 V to 5.5 V. Stretched SOP 6 PINS MARKING DIAGRAM Features • FOD8173T − 8 mm Creepage and Clearance Distance, and 0.4 mm ON 8173 VXXYYP insulation distance to achieve reliable and high voltage insulation • High Noise Immunity characterized by common mode transient immunity (CMTI) • 20 kV/ms Minimum CMTI • 3.3 V and 5 V CMOS Compatibility • Specifications Guaranteed Over 3 V to 5.5 V supply voltage and −40 • • to 100°C extended industrial temperature range High Speed ♦ 20 Mbit/sec Date Rate (NRZ) ♦ 55 ns max. Propagation Delay ♦ 20 ns max. Pulse Width Distortion Safety and regulatory pending approvals ♦ UL1577, 5,000 VACRMS for 1 min. ♦ DIN−EN/IEC60747−5−5, 1,140 V peak working insulation voltage for FOD8173T ON 8173 V XX YY P PIN CONNECTIONS Typical Applications TRUTH TABLE • Microprocessor System Interface • • • • ♦ SPI, I2C Industrial Field Bus Communications ♦ DeviceNet, CAN, RS485 Programmable Logic Control Isolated Data Acquisition System Voltage Level Translator © Semiconductor Components Industries, LLC, 2017 August, 2018 − Rev.1 = Corporate Name = Device Number = DIN EN/IEC60747−5−5 Option = Two Digit Year Code = Digit Work Week = Assembly Package Code LED VO Off High On Low ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. 1 Publication Order Number: FOD8173/D FOD8173, FOD8173T SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Table 1. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated ains Voltage Characteristics FOD8173 FOD8173T < 150 VRMS I–IV I–IV < 300 VRMS I–IV I–IV < 450 VRMS I–III I–IV < 600 VRMS I–III I–III 40/100/21 40/100/21 2 2 175 175 Climatic Classification Pollution Degree (DIN VDE 0110/1.89) Comparative Tracking Index Table 2. Characteristics Symbol VPR Parameter Unit FOD8173 FOD8173T Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1,671 2,137 Vpeak Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1,426 1,824 Vpeak 891 1,140 Vpeak VIORM Maximum Working Insulation Voltage VIOTM Highest Allowable Over−Voltage 6,000 8,000 Vpeak External Creepage w 8.0 w 8.0 mm External Clearance w 7.0 w 8.0 mm Distance Through Insulation (Insulation Thickness) w 0.4 w 0.4 mm 150 200 300 150 200 300 °C mA mW >109 >109 W DTI Safety Limit Values – Maximum Values Allowed in the Event of a Failure, Case Temperature Input Current IS,INPUT Output Power PS,OUTPUT TS RIO Insulation Resistance at TS, VIO = 500 V www.onsemi.com 2 FOD8173, FOD8173T Table 3. ABSOLUTE MAXIMUM RATINGS (TA = 255C unless otherwise specified) Symbol Value Units TSTG Storage Temperature Parameter −40 to +125 °C TOPR Operating Temperature −40 to +100 °C Junction Temperature −40 to +125 °C 260 for 10sec °C mA TJ TSOL Lead Solder Temperature (Refer to Reflow Temperature Profile) Input Characteristics IF Average Forward Input Current 20 VR Reverse Input Voltage 5.0 V PDI Input Power Dissipation (Note 1) 40 mW Output Characteristics VDD Supply Voltage 0 to 6.0 V VO Output Voltage −0.5 to VDD + 0.5 V IO Average Output Current 10 mA Output Power Dissipation (Note 1) 70 mW PDO Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Table 4. Symbol Min. Max. Unit Ambient Operating Temperature −40 +100 °C VDD Supply Voltages (Note 2) 3.0 5.5 V VFL Logic Low Input Voltage 0 0.8 V IOL Logic Low Output Current 0 7 mA IFH Logic High Input Current 5.0 16 mA TA Parameter Table 5. ISOLATION CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at TA = 25°C) 1. 2. 3. 4. Symbol Parameter Conditions Min. Typ. Max. VISO Input−Output Isolation Voltage TA = 25°C, R.H. < 50%, t = 1.0min, II−O v 20μA (Notes 3, 4) 5,000 RISO Isolation Resistance VI−O = 500V (Note 3) 1011 W CISO Isolation Capacitance VI−O = 0V, freq=1.0Mhz (Note 3) 1.0 pF VACRMS No derating required to 100°C. 0.1 mF bypass capacitor must be connected between 4 and 6. Device is considered a two terminal device: Pins 1, 2 and 3 are shorted together and Pins 4, 5, and 6 are shorted together. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration. www.onsemi.com 3 Units FOD8173, FOD8173T Table 6. ELECTRICAL CHARACTERISTICS (Apply over all recommended conditions, TA = −40°C to +100°C, 3.0V ≤ VDD ≤ 5.5V, unless otherwise specified. Typical value is measured at TA = 25°C and VDD = 3.3V.) Symbol Parameter Conditions Min. Typ. Max. Units 1.80 V INPUT CHARACTERISTICS Forward Voltage IF = 10 mA 1.0 1.35 BVR Input Reverse Breakdown Voltage IR = 10 mA 5.0 18 IFHL Threshold Input Current VF V 2.8 5.0 IO = 20 uA, IF = 10 mA 0.0027 0.01 IO = 4 mA, IF = 10 mA 0.27 0.8 mA OUTPUT CHARACTERISTICS VOL VOH Logic Low Output Voltage VDD = 3.3 V, IO = −20 mA, IF = 0 mA VDD − 0.1 3.3 VDD = 3.3 V, IO= −4 mA, IF = 0 mA VDD − 0.5 3.1 VDD = 5.0 V, IO=−20 mA, IF = 0 mA VDD − 0.1 5.0 VDD = 5.0 V, IO=−4 mA, IF = 0 mA VDD − 0.5 4.9 V Logic High Output Voltage IDDL Logic Low Output Supply Current IDDH Logic High Output Supply Current V IF = 10 mA, VDD = 3.3 V 3.3 4.8 IF = 10 mA, VDD = 5.0 V 4.0 5.0 IF = 0 mA, VDD = 3.3 V 3.3 4.8 IF = 0 mA, VDD = 5.0 V 4.0 5.0 mA Table 7. SWITCHING CHARACTERISTICS Apply over all recommended conditions, (TA = −40°C to +100°C, 3.0V ≤ VDD ≤ 5.5V, IF = 5 mA), unless otherwise specified. Typical value is measured at TA = 25°C and VDD = 3.3V. Symbol Parameter Conditions Min. Typ. Date Rate (Note 5) Max. Units 20 Mbit/sec tPW Pulse Width 50 ns tPHL Propagation Delay Time to Logic Low Output CL = 15pF 25 55 ns tPLH Propagation Delay Time to Logic High Output CL = 15pF 25 55 ns PWD Pulse Width Distortion, | tPHL − tPLH| CL = 15pF 5.5 20 ns tR Output Rise Time (10% − 90%) CL = 15pF 7.0 ns tF Output Fall Time (90% − 10%) CL = 15pF 7.0 ns |CMH| Common Mode Transient Immunity at Output High IF = 0mA, VO > 0.8VDD, VCM = 1000V, TA = 25°C (Note 6) 20 40 kV/ms |CML| Common Mode Transient Immunity at Output Low IF = 5mA, VO < 0.8V, VCM = 1000V, TA = 25°C (Note 6) 20 40 kV/ms 5. Data rate is based on 10 MHz, 50% NRZ pattern with a 50 nsec minimum bit time. 6. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common mode impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable negative dVcm/dt on the trailing edge of the common pulse signal, Vcm, to assure that the output will remain low. www.onsemi.com 4 FOD8173, FOD8173T TYPICAL CHARACTERISTICS Figure 1. Input Forward Current vs. Forward Voltage Figure 2. Input Threshold Current vs. Ambient Temperature Figure 3. Logic Low Input Supply Current vs. Ambient Temperature Figure 4. Logic Low Input Supply Current vs. Input Frequency (VDD = 3.3 V) Figure 6. Logic High Input Supply Current vs. Ambient Temperature Figure 5. Logic Low Input Supply Current vs. Input Frequency (VDD = 5 V) www.onsemi.com 5 FOD8173, FOD8173T Figure 7. Propagation Delay vs. Ambient Temperature Figure 8. Pulse Width Distortion vs. Ambient Temperature Figure 9. Pulse Width Distortion vs. Input Forward Current Figure 10. Propagation Delay vs. Input Forward Current Figure 11. Rise, Fall Time vs. Ambient Temperature Figure 12. Rise, Fall Time vs. Input Forward Current www.onsemi.com 6 FOD8173, FOD8173T SCHEMATICS Figure 13. Test Circuit for Propagation Delay Time, Rise Time and Fall Time Figure 14. Test Circuit for Instantaneous Common Mode Rejection Voltage www.onsemi.com 7 FOD8173, FOD8173T REFLOW PROFILE Figure 15. Reflow Profile Table 8. REFLOW PROFILE Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 − 120 seconds Ramp−up Rate (tL to tP) 3°C/second max Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 − 150 seconds Peak Body Package Temperature 260°C + 0°C / −5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C / second max. Time 25°C to Peak Temperature 8 minutes max. www.onsemi.com 8 FOD8173, FOD8173T Table 9. ORDERING INFORMATION Part Number Package Packing Method FOD8173 Stretched Body SOP 6−Pin Tube (100 units per tube) FOD8173R2 Stretched Body SOP 6−Pin Tape and Reel (1,000 units per reel) FOD8173V Stretched Body SOP 6−Pin, DIN EN/IEC60747−5−5 Option (pending) Tube (100 units per tube) FOD8173R2V Stretched Body SOP 6−Pin, DIN EN/ IEC60747−5−5 Option (pending) Tape and Reel (1,000 units per reel) FOD8173T Stretched Body SOP 6−Pin, Wide Lead Tube (100 units per tube) FOD8173TR2 Stretched Body SOP 6−Pin, Wide Lead Tape and Reel (1,000 units per reel) FOD8173TV Stretched Body SOP 6−Pin, Wide Lead, DIN EN/IEC60747−5−5 Option (pending) Tube (100 units per tube) FOD8173TR2V Stretched Body SOP 6−Pin, Wide Lead, DIN EN/ IEC60747−5−5 Option (pending) Tape and Reel (1,000 units per reel) www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC6 W CASE 751EM ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13749G SOIC6 W DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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