FOD814 Series, FOD817 Series
4-Pin DIP Phototransistor Optocouplers
Features
Description
• AC Input Response (FOD814)
• Current Transfer Ratio in Selected Groups:
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
FOD814: 20–300%
FOD814A: 50–150%
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
• Minimum BVCEO of 70 V Guaranteed
• Safety and Regulatory Approvals
– UL1577, 5,000 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
FOD814 Series
• AC Line Monitor
• Unknown Polarity DC Sensor
• Telephone Line Interface
FOD817 Series
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
ANODE 1
4 COLLECTOR
CATHODE 2
FOD814
3 EMITTER
4
FOD817
1
Figure 1. Schematic
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
Figure 2. Package Outlines
www.fairchildsemi.com
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
November 2015
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
I–IV
< 150 VRMS
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
I–III
< 300 VRMS
Climatic Classification
30/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1560
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
8000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option W, 0.4" Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
mm
TS
Case Temperature(1)
175
°C
IS,INPUT
Current(1)
400
mA
700
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO = 500
V(1)
>
1011
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
2
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
Symbol
Value
Parameter
FOD814
FOD817
Unit
Total Device
TSTG
Storage Temperature
TOPR
Operating Temperature
TJ
TSOL
θJC
PTOT
-55 to +150
-55 to +105
Junction Temperature
°C
-55 to +110
°C
-55 to +125
°C
260 for 10 seconds
°C
Junction-to-Case Thermal Resistance
210
°C/W
Total Device Power Dissipation
200
mW
Lead Solder Temperature
EMITTER
IF
Continuous Forward Current
VR
Reverse Voltage
±50
50
mA
6
V
Power Dissipation
70
mW
Derate Above 100°C
1.7
mW/°C
VCEO
Collector-Emitter Voltage
70
V
VECO
Emitter-Collector Voltage
6
V
Continuous Collector Current
50
mA
Collector Power Dissipation
150
mW
Derate Above 90°C
2.9
mW/°C
PD
DETECTOR
IC
PC
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
3
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Absolute Maximum Ratings
Individual Component Characteristics
Symbol
Parameter
Device
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
VF
Forward Voltage
IR
Reverse Current
Ct
Terminal Capacitance
FOD814
IF = ±20 mA
1.2
1.4
FOD817
IF = 20 mA
1.2
1.4
FOD817
VR = 4.0 V
FOD814
V = 0, f = 1 kHz
50
250
FOD817
V = 0, f = 1 kHz
30
250
FOD814
VCE = 20 V, IF = 0
100
FOD817
VCE = 20 V, IF = 0
100
10
V
µA
pF
DETECTOR
ICEO
Collector Dark Current
BVCEO
Collector-Emitter Breakdown
Voltage
FOD814
IC = 0.1 mA, IF = 0
70
FOD817
IC = 0.1 mA, IF = 0
70
BVECO
Emitter-Collector Breakdown
Voltage
FOD814
IE = 10 µA, IF = 0
6
FOD817
IE = 10 µA, IF = 0
6
nA
V
V
DC Transfer Characteristics
Symbol
Parameter
Device
FOD814
FOD814A
CTR
Current Transfer Ratio(2)
Test Conditions
IF = ±1 mA, VCE = 5 V
Max.
20
300
50
150
FOD817
50
600
80
160
130
260
200
400
IF = 5 mA, VCE = 5 V
FOD817C
FOD817D
Collector-Emitter Saturation
Voltage
Typ.
FOD817A
FOD817B
VCE(SAT)
Min.
300
Unit
%
600
FOD814
IF = ±20 mA, IC = 1 mA
0.1
0.2
FOD817
IF = 20 mA, IC = 1 mA
0.1
0.2
Min.
Typ.
Max.
15
80
V
AC Transfer Characteristics
Symbol
Parameter
Device
fC
Cut-Off Frequency
FOD814
tr
Response Time (Rise)
FOD814,
FOD817
tf
Response Time (Fall)
FOD814,
FOD817
Test Conditions
VCE = 5 V, IC = 2 mA,
RL = 100 Ω, -3 dB
VCE = 2 V, IC = 2 mA,
RL = 100 Ω(3)
Unit
kHz
4
18
µs
3
18
µs
Notes:
2. Current Transfer Ratio (CTR) = IC / IF x 100%.
3. For test circuit setup and waveforms, refer to page 7.
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
4
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Isolation Characteristics
Symbol
Parameter
Device
Test Conditions
Min.
VISO
Input-Output Isolation
Voltage(4)
FOD814,
FOD817
f = 60 Hz, t = 1 minute,
II-O ≤ 2 µA
5000
RISO
Isolation Resistance
FOD814,
FOD817
VI-O = 500 VDC
CISO
Isolation Capacitance
FOD814,
FOD817
VI-O = 0, f = 1 MHz
Typ.
Max.
Unit
VACRMS
5x1010 1x1011
0.6
Ω
1.0
pf
Note:
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
5
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
COLLECTOR POWER DISSIPATION PC (mW)
COLLECTOR POWER DISSIPATION PC (mW)
TA = 25°C unless otherwise specified.
200
150
100
50
0
-55 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
200
150
100
50
0
-55 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
Fig. 3 Collector Power Dissipation
vs. Ambient Temperature (FOD814)
Fig. 4 Collector Power Dissipation
vs. Ambient Temperature (FOD817)
Ic = 0.5mA
1mA
3mA
5mA
5
4
Ta = 25°C
7mA
3
2
1
0
0
2.5
5.0
7.5 10.0 12.5
FORWARD CURRENT IF (mA)
CURRENT TRANSFER RATIO CTR ( %)
TA = 110 C
75oC
o
50 C
25oC
0oC
o
0.1
0.5
-30 C
o
-55 C
1.0
1.5
25oC
0oC
o
-30 C
1
o
-55 C
140
1.0
1.5
2.0
120
VCE = 5V
Ta= 25°C
100
Fig. 7 Forward Current vs. Forward Voltage
(FOD817)
FOD817
80
60
40
FOD814
20
0
0. 1 0.2
2.0
FORWARD VOLTAGE VF (V)
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
o
50 C
10
Fig. 6 Forward Current vs. Forward Voltage
o
1
75oC
FORWARD VOLTAGE VF (V)
100
10
o
TA = 105 C
0.1
0.5
15.0
Fig. 5 Collector-Emitter Saturation Voltage
vs. Forward Current
FORWARD CURRENT IF (mA)
(FOD814)
100
FORWARD CURRENT IF (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
6
0.5 1 2
5 10 20 50 100
FORWARD CURRENT IF (mA)
Fig. 8 Current Transfer Ratio
vs. Forward Current
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6
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves
TA = 25°C unless otherwise specified.
30
50
I F = 30mA
40
20 m A
30
Pc (M AX.)
10mA
20
I IF = 30mA
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Ta= 25°C
5mA
10
Pc(MAX.)
20
15
10mA
10
5m A
5
1m A
0
0
0
0
10 20 30 40 50 60 70 80 90 100
Fig. 10 Collector Current vs.
Collector-Emitter Voltage (FOD817)
Fig. 9 Collector Current
vs. Collector-Emitter Voltage (FOD814)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
160
FOD814
IF = 1 mA
VCE = 5V
140
120
100
80
FOD817
IF = 5mA
VCE = 5V
60
40
20
0
-60 -40 -20
0
0.12
I = 20mA
F
0.10
AMBIENT TEMPERATURE TA (°C)
0.08
0.06
0.04
0.02
Fig. 12 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 11 Relative Current Transfer
Ratio vs. Ambient Temperature
100
LED POWER DISSIPATION PLED (mW)
LED POWER DISSIPATION PLED (mW)
IC = 1mA
0.00
-60 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
20 40 60 80 100 120
80
60
40
20
0
-55 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
Fig. 13 LED Power Dissipation vs.
Ambient Temperature (FOD814)
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
10 20 30 40 50 60 70 80 90
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
RELATIVE CURRENT TRANSFER
RATIO (%)
Ta = 25°C
20mA
25
100
80
60
40
20
0
-55 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
Fig. 14 LED Power Dissipation vs.
Ambient Temperature (FOD817)
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7
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves (Continued)
TA = 25°C unless otherwise specified.
RESPONSE TIME (μs)
50
20
VCE = 2V
Ic= 2mA
Ta = 25°C
tr
VOLTAGE GAIN AV (dB)
100
tf
10
5
td
2
ts
1
0.5
VCE = 2V
Ic = 2mA
Ta = 25°C
0
RL=10k
1k
100
-10
0.2
-20
0.2
0.1
0.1 0.2 0.5 1
2
5
LOAD RESISTANCE RL (kΩ)
10
1000
Fig. 16 Frequency Response
Fig. 15 Response Time
vs. Load Resistance
COLLECTOR DARK CURRENT ICEO (nA)
10
100
0.5 15 2
FREQUENCY f (kHz)
10000
VCE = 20V
1000
100
10
1
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
Fig. 17 Collector Dark Current
vs. Ambient Temperature
Vcc
Input
RD
Input
Vcc
Output
RL Output
RD
10%
RL
Output
90%
td
ts
tr
tf
Fig. 19 Test Circuit for Frequency Response
Fig. 18 Test Circuit for Response Time
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
8
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves (Continued)
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Reflow Profile
260 T
P
245
240
220 TL
Temperature (°C)
200
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
tP
Tsmax
tL
180
160
Tsmin
140
ts
120
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
245°C +0°C / –5°C
30 seconds
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
Figure 20. Reflow Profile
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
9
Part Number
Package
Packing Method
FOD817X
DIP 4-Pin
Tube (100 units per tube)
FOD817XS
SMT 4-Pin (Lead Bend)
Tube (100 units per tube)
FOD817XSD
SMT 4-Pin (Lead Bend)
Tape and Reel (1,000 units per reel)
FOD817X300
DIP 4-Pin, DIN EN/IEC60747-5-5 option
Tube (100 units per tube)
FOD817X3S
SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option
Tube (100 units per tube)
FOD817X3SD
SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option
Tape and Reel (1,000 units per reel)
FOD817X300W
DIP 4-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube)
Note:
The product orderable part number system listed in this table also applies to the FOD814 products.
"X" denotes the Current Transfer Ratio (CTR) options
Marking Information
4
5
V X ZZ Y
3
817
6
2
1
Figure 21. Top Mark
Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on parts ordered with
this option)
4
One-Digit Year Code, e.g., ‘5’
5
Two-Digit Work Week, Ranging from ‘01’ to ‘53’
6
Assembly Package Code
Y = Manufactured in Thailand
YA = Manufactured in China
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
10
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Ordering Information
P2
Ø1.55±0.05
P0
1.75±0.1
F
W
B0
A0
P1
0.3±0.05
K0
Figure 22. Carrier Tape Specification
Symbol
Description
Dimensions in mm (inches)
W
Tape wide
16 ± 0.3 (0.63)
P0
Pitch of sprocket holes
F
P2
Distance of compartment
7.5 ± 0.1 (0.295)
2 ± 0.1 (0.079)
P1
Distance of compartment to compartment
12 ± 0.1 (0.472)
A0
Compartment
4 ± 0.1 (0.15)
10.45 ± 0.1 (0.411)
B0
5.30 ± 0.1 (0.209)
K0
4.25 ± 0.1 (0.167)
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
11
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Carrier Tape Specifications
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I77
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