Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FOD8332
Input LED Drive, 2.5 A Output Current, IGBT Drive
Optocoupler with Desaturation Detection, Isolated Fault
Sensing, and Active Miller Clamp
Features
Description
■ Input LED Drive Facilitates Receiving Digitally
The FOD8332 is an advanced 2.5 A output current IGBT
drive optocoupler capable of driving medium-power
IGBTs with ratings up to 1,200 V and 150 A. It is suited
for fast-switching driving of power IGBTs and
MOSFETs in motor-control inverter applications and
high-performance power systems. The FOD8332 offers
protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.
Encoded Signals from PWM Output
■ Optically Isolated Fault-Sensing Feedback
■ Active Miller Clamp to Shut Off IGBT During High
dv/dt without Negative Supply Voltage
■ High Noise Immunity Characterized by
Common Mode Rejection – 35 kV/µs Minimum,
VCM = 1500 VPEAK
■ 2.5 A Peak Output Current Driving Capability for
Medium Power IGBT
– P-Channel MOSFETs at Output Stage Enable
Output Voltage Swing Close to Supply Rail
(Rail-to-Rail Output)
– Wide Supply Voltage Range: 15 V to 30 V
■ Integrated IGBT Protection
– Desaturation Detection
– “Soft” IGBT Turn-Off
– Under-Voltage Lockout (UVLO) with Hysteresis
Fast
Switching Speed Over Full Operating
■
Temperature Range
The device utilizes Fairchild’s proprietary Optoplanar®
coplanar packaging technology and optimized IC design
to achieve reliable high isolation and high noise immunity,
characterized by high common-mode rejection and power
supply rejection specifications. The device is housed in a
wide-body, 16-pin, small-outline, plastic package.
The gate-driver channel consists of an aluminum gallium
arsenide (AlGaAs) light-emitting diode (LED) optically
coupled to an integrated high-speed driver circuit with a
low-RDS(ON) MOSFET output stage. The fault-sense
channel consists of an AlGaAs LED optically coupled to
an integrated high-speed feedback circuit for fault
sensing.
– 250 ns Maximum Propagation Delay
– 100 ns Maximum Pulse Width Distortion
■ Extended Industrial Temperature Range:
Related Resources
– –40°C to 100°C
■ Safety and Regulatory Approvals
■ FOD8318—2.5 A Output Current, IGBT Drive
– UL1577, 4,243 VRMS for 1 Minute
– DIN-EN/IEC60747-5-5:
1,414 VPEAK Working Insulation Voltage Rating
8,000 VPEAK Transient Isolation Voltage Rating
■ 8 mm Creepage and Clearance Distances
Applications
■ FOD8316—2.5 A Output Current, IGBT Drive
Optocoupler with Desaturation, Isolated Fault Sensing
Optocoupler with Active Miller Clamp, Desaturation
Detection, and Isolated Fault Sensing
■ FOD8333 – Input LED Drive, 2.5 A Output Current,
IGBT Drive Optocoupler with Desaturation Detection,
Isolated Fault Sensing, Active Miller Clamp, and
Automatic Fault Reset
■ AN-3009—Standard Gate-Driver Optocouplers
■ www.fairchildsemi.com/search/tree/optoelectronics/
■ AC and Brushless DC Motor Drive
■ Industrial Inverter
■ Uninterruptible Power Supply
■ Induction Heating
■ Isolated IGBT/Power MOSFET Gate Drive
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
September 2014
UVLO (VDD – VE)
LED
DESAT Detected?
FAULT(1)
VO
X
Active
X
HIGH
LOW
On
Not Active
Yes
LOW
LOW
Off
X
X
HIGH
LOW
On
Not Active
No
HIGH
HIGH
Note:
1. FAULT pin is connected to a pull-up resistor.
GND
1
16 VE
VCC
2
15 VLED2+
FAULT
3
14 DESAT
GND
4
13 VDD
VLED1–
5
12 VSS
VLED1+
6
11 VO
VLED1+
7
10 VCLAMP
VLED1–
8
9
VSS
Figure 2. Pin Configuration
Pin Definitions
Pin #
Name
Description
1
GND
Ground for Fault-Sense Optocoupler
2
VCC
Positive Supply Voltage (3 V to 15 V) for Fault Sense Optocoupler
3
FAULT
Fault-Sense Output
4
GND
Ground for Fault-Sense Optocoupler
5
VLED1-
LED1 Cathode
6
VLED1+
LED1 Anode
7
VLED1+
LED1 Anode
8
VLED1-
LED1 Cathode
9
VSS
10
VCLAMP
Negative Output Supply Voltage
Clamp Supply Voltage
11
VO
Gate-Drive Output Voltage
12
VSS
Negative Output Supply Voltage
13
VDD
Positive Output Supply Voltage
14
DESAT
Desaturation Voltage Input
15
VLED2+
LED2 Anode (Do not connect. Leave floating.)
16
VE
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
Output Supply Voltage/IGBT Emitter
www.fairchildsemi.com
2
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Truth Table
GND
1
VCC
2
FAULT
3
DESAT
VE
15
VLED2+
14
DESAT
13
VDD
12
VSS
11
VO
UVLO
GND
4
VLED1-
5
VLED1+
6
VLED1+
7
SHIELD
FAULT IC
8
DRIVER
VLED1-
LED2
16
10
SHIELD
MILLER
CLAMP
9
VCLAMP
VSS
OUTPUT IC
Figure 3. Functional Block Diagram
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
3
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Block Diagram
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings must be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
Rated Mains Voltage < 150 VRMS
I–IV
Rated Mains Voltage < 300 VRMS
I–IV
Rated Mains Voltage < 450 VRMS
I–IV
Rated Mains Voltage < 600 VRMS
I–IV
Rated Mains Voltage < 1000 VRMS
I–III
Climatic Classification
40/100/21
Pollution Degree (DIN VDE 0110/1.89)
CTI
2
Comparative Tracking Index (DIN IEC 112/VDE 0303 Part 1)
175
Input-to-Output Test Voltage, Method b, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
2651
Vpeak
Input-to-Output Test Voltage, Method a, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
2262
Vpeak
VIORM
Maximum Working Insulation Voltage
1414
Vpeak
VIOTM
Highest Allowable Over Voltage
8000
Vpeak
External Creepage
8.0
mm
External Clearance
8.0
mm
Insulation Thickness
0.5
mm
150
°C
100
mW
600
mW
109
Ω
VPR
Safety Limit Values – Maximum Values in Failure;
TCase
Case Temperature
Safety Limit Values – Maximum Values in Failure;
PS,INPUT
Input Power
Safety Limit Values – Maximum Values in Failure;
PS,OUTPUT
RIO
Output Power
Insulation Resistance at TS, VIO = 500 V
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
4
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25ºC unless otherwise specified.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-40 to +125
ºC
TOPR
Operating Temperature
-40 to +100
ºC
Junction Temperature
-40 to +125
ºC
Lead Solder Temperature
(not certified for wave immersion)
260 for 10 s
ºC
45
mW
600
mW
TJ
TSOL
Refer to reflow temperature profile on page 31
PDI
PDO
Input Power Dissipation(2)(3)
Output Power
Dissipation(3)(4)
Gate Drive Channel
IF(AVG)
Average Input Current
25
mA
IF(PEAK)
Peak Transient Forward Current
(Pulse Width < 1 µs)
1.0
A
IOH(PEAK)
Peak Output High Current(5)
3.0
A
IOL(PEAK)
Peak Output Low Current(5)
3.0
A
Reverse Input Voltage
5.0
V
-0.5 to 15
V
-0.5 to 35 – (VE – VSS)
V
VR
Supply Voltage(6)
VE – VSS
Negative Output
VDD – VE
Positive Output Supply Voltage
VO(PEAK) – VSS Gate Drive Output Voltage
VDD – VSS
VDESAT
Desaturation Voltage
IDESAT
Desaturation Current
VCLAMP – VSS
ICLAMP
tR(IN), tF(IN)
-0.5 to 35
V
-0.5 to 35
V
VE to VE + 25
V
Output Supply Voltage
60
mA
-0.5 to 35
V
Peaking Clamping Sinking Current
1.7
A
Input Signal Rise and Fall Time
500
ns
Active Miller Clamping Voltage
Fault Sense Channel
Positive Input Supply Voltage
-0.5 to 20
V
VFAULT
FAULT Output Voltage
-0.5 to 20
V
IFAULT
FAULT Output Current
16.0
mA
VCC
Notes:
2. No derating required across temperature range.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected
to conditions outside these ratings.
4. Derate linearly above 25°C, free air temperature at a rate of 6.2 mW/°C.
5. Maximum pulse width = 10 µs.
6. This negative output supply voltage is optional. It is only needed when negative gate drive is implemented.
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
5
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Absolute Maximum Ratings
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
TA
Parameter
Ambient Operating Temperature
Min.
Max.
Unit
-40
+100
ºC
IF(ON)
Input Current (ON)
7
16
mA
VF(OFF)
Input Voltage (OFF)
-3.6
0.8
V
3
15
V
Supply Voltage
VCC
VDD – VSS
Total Output Supply Voltage
15
30
V
VDD – VE
Positive Output Supply Voltage(7)
15
30 – (VE – VSS)
V
VE – VSS
Negative Output Supply Voltage
0
15
V
tPW
Input Pulse Width
500
ns
Note:
7. During power up or down, ensure that both the input and output supply voltages reach the proper recommended
operating voltages to avoid any momentary instability at the output state.
Isolation Characteristics
Apply over all recommended conditions; typical value is measured at TA = 25ºC.
Symbol
Parameter
Conditions
Min.
VISO
Input-Output Isolation
Voltage
TA = 25°C, Relative Humidity < 50%,
t = 1.0 minute, II-O ≤ 10 µA, 50 Hz(8)(9)(10)
4,243
RISO
Isolation Resistance
VI-O = 500 V(8)
CISO
Isolation Capacitance
VI-O = 0 V, Frequency = 1.0 MHz(8)
Typ.
Max.
Units
VRMS
1011
1
pF
Notes:
8. Device is considered a two-terminal device: pins 1 to 8 are shorted together and pins 9 to 16 are shorted together.
9. 4,243 VRMS for 1-minute duration is equivalent to 5,091 VRMS for 1-second duration.
10. The input-output isolation voltage is a dielectric voltage rating per UL1577. It should not be regarded as an
input-output continuous voltage rating. For the continuous working voltage rating, refer to equipment-level safety
specification or DIN EN/IEC 60747-5-5 Safety and Insulation Ratings Table on page 4.
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
6
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Recommended Operating Conditions
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Figure
1.10
1.45
1.80
V
5
Gate Drive Channel
VF
Δ(VF/TA)
Input Forward Voltage
IF = 10 mA
Temperature Coefficient
of Forward Voltage
-1.5
BVR
Input Reverse
Breakdown Voltage
IR = 10 µA
CIN
Input Capacitance
f = 1 MHz, VF = 0 V
60
IFLH
Threshold Input Current,
Low-to-High
IO = 0 mA, VO > 5 V
2.5
VFHL
Threshold Input Voltage,
High-to-Low
IO = 0 mA, VO < 5 V
0.8
VO = VDD – 3 V,
IF = 10 mA
-1.0
VO = VDD – 6 V,
IF = 10 mA(11)
-2.5
IOH
High Level Output
Current
IOL
Low Level Output
Current
IOLF
mV/ºC
5
VO = VSS + 3 V, IF = 0 mA
1
V
pF
7.0
-2.5
mA
30
V
31
A
A
3
A
6, 10,
32
A
7, 11,
33
mA
34
V
8, 10,
35
0.5
V
9, 11,
36
2.5
5.0
mA
12, 13,
37
2.5
5.0
mA
12, 13,
38
VO = VSS + 6 V,
IF = 0 mA(12)
2.5
Low Level Output
Current During Fault
Condition
VO – VSS = 14 V
70
VOH
High Level Output
Voltage
IF = 10 mA,
IO = –100 mA(13)(14)(15)
VOL
Low Level Output Voltage IF = 0 mA, IO = 100 mA
0.1
IDDH
High Level Supply
Current
VO = Open(15), IO = 0 mA
IDDL
Low Level Supply
Current
VO = Open, IO = 0 mA
125
170
VDD – 1.0 VDD – 0.2
IEL
VE Low Level Supply
Current
-0.8
-0.5
mA
38
IEH
VE High Level Supply
Current
-0.50
-0.25
mA
37
-0.33
-0.25
mA
14, 39
10
40
mA
39
IF = 10 mA, VO > 5 V
10.8
11.7
12.7
V
IF = 10 mA, VO < 5 V
9.8
10.7
11.7
V
ICHG
Blanking Capacitor
Charge Current
VDESAT = 2 V(15)(16)
IDSCHG
Blanking Capacitor
Discharge Current
VDESAT = 7 V
VUVLO+
VUVLO-
Under-Voltage Lockout
Threshold(14)
UVLOHYS
Under-Voltage Lockout
Threshold Hysteresis
VDESAT
DESAT Threshold(14)
VCLAMP_THRES
Clamping Threshold
Voltage
ICLAMPL
1.0
VDD – VE > VULVO–
Clamp Low Level Sinking
VO = VSS + 2.5 V
Current
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
-0.13
6.0
0.35
6.5
40
V
7.2
V
15, 39
2.0
V
41
1.10
A
16, 42
www.fairchildsemi.com
7
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Electrical Characteristics
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Figure
0.0004
2
µA
43
150
200
µA
44
0.02
0.50
µA
45
mA
17, 46
Fault Feedback Channel
ICCH
I = 0 mA,
FAULT High Level Supply F2
VFAULT = Open,
Current
VCC = 15 V
ICCL
FAULT Low Level Supply
Current
IF2 = 16 mA,
VFAULT = Open,
VCC = 15V
IFAULTH
FAULT Logic High Output
VFAULT = VCC = 5.5 V
Current
IFAULTL
FAULT Logic Low Output
Current
VFAULT = 0.4 V,
VCC = 5.5 V
1.1
Notes:
11. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%.
12. Minimum pulse width = 4.99 ms, minimum duty cycle = 99.8%.
13. VOH is measured with the DC load current in this testing (maximum pulse width = 1 ms, maximum duty
cycle = 20%). When driving capacitive loads, VOH approaches VDD as IOH approaches zero units.
14. Positive output supply voltage (VDD – VE) should be at least 15 V to ensure adequate margin in excess of the
maximum under-voltage lockout threshold, VUVLO+, of 12.7 V.
15. When VDD – VE > VUVLO and the output state VO is allowed to go HIGH, the DESAT-detection feature is active and
provides the primary source of IGBT protection. UVLO is needed to ensure DESAT detection is functional.
16. The blanking time, tBLANK, is adjustable by an external capacitor (CBLANK), where tBLANK = CBLANK × (VDESAT / ICHG).
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
8
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Electrical Characteristics (Continued)
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Figure
tPHL
Propagation Delay to Logic
Low Output(18)
100
135
250
ns
tPLH
Propagation Delay to Logic
High Output(19)
100
150
250
ns
18, 19,
20, 21,
47
PWD
Pulse Width Distortion,
| tPHL – tPLH|(20)
15
100
ns
47
150
ns
PDD Skew
Propagation Delay Difference
Between Any Two Parts or
Channels, ( tPHL – tPLH)(21)
Rg = 10 Ω, Cg =10 nF,
f = 10 kHz,
Duty Cycle = 50%,
IF = 10 mA,
VDD – VSS = 30 V(17)
-150
tR
Output Rise Time
(10% to 90%)
50
ns
tF
Output Fall Time
(90% to 10%)
50
ns
µs
47
tDESAT(LOW)
DESAT Sense to DESAT Low
Propagation Delay(24)
0.25
tDESAT(90%)
DESAT Sense to 90% VO
Delay(22)
0.45
0.70
µs
22, 48
tDESAT(10%)
DESAT Sense to 10% VO
Delay(22)
2.8
4.0
µs
23, 24,
25, 48
0.5
1.5
µs
26, 48
0.5
2.3
4.5
µs
27, 48
10.0
22.0
35.0
µs
48
tDESAT(FAULT)
DESAT Sense to Low Level
FAULT Signal Delay(23)
tRESET(FAULT)
RESET to High Level FAULT
Signal Delay(25)
Rg = 10 Ω, Cg = 10 nF,
VDD – VSS = 30 V
(CDESAT = 100pF,
RF = 4.7 kΩ, VCC = 5.5 V)
tDESAT(MUTE) DESAT Input Mute
tUVLO ON
UVLO Turn-On Delay(26)
tUVLO OFF
UVLO Turn-Off Delay(27)
tGP
Time-to-Good Power(28)
VDD = 0 to 30 V in 10 µs
Ramp
| CMH |
Common Mode Transient
Immunity at Output High
TA = 25˚C, VCC = 5 V,
VDD = 25 V, VSS = Ground,
CF = 15 pF, RF = 4.7 kΩ,
VCM = 1500 VPEAK(29)
| CML |
Common Mode Transient
Immunity at Output Low
TA = 25˚C, VCC = 5 V,
VDD = 25 V, VSS = Ground,
CF = 15 pF, RF = 4.7 kΩ,
VCM = 1500 VPEAK(30)
4.0
µs
4.0
µs
2.0
µs
28, 29,
49
35
50
kV/µs
51, 52
35
50
kV/µs
50, 53
VDD = 20 V in 1.0 ms
Ramp
49
Notes:
17. This load condition approximates the gate load of a 1200 V / 150 A IGBT.
18. Propagation delay tPHL is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal.
19. Propagation delay tPLH is measured from the 50% level on the rising edge of the input pulse to the 50% level of the
rising edge of the VO signal.
20. PWD is defined as | tPHL – tPLH | for any given device.
21. The difference between tPHL and tPLH between any two parts under same operating conditions with equal loads.
22. The length of time the DESAT threshold must be exceeded before VO begins to go LOW. This is supply voltage
dependent.
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
9
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Switching Characteristics
24. The length of time the DESAT threshold must be exceeded before VO begins to go LOW and the FAULT output
begins to go LOW.
25. The length of time from when RESET is initiated (via IF turn-on) until FAULT output goes HIGH.
26. The UVLO turn-on delay, tUVLO ON, is measured from the VUVLO+ threshold level of the rising edge of the output
supply voltage (VDD) to the 5 V level of the rising edge of the VO signal.
27. The UVLO turn-off delay, tUVLO OFF, is measured from the VUVLO– threshold level of the falling edge of the output
supply voltage (VDD) to the 5 V level of the falling edge of the VO signal.
28. The time to good power, tGP, is measured from the VUVLO+ threshold level of the rising edge of the output supply
voltage (VDD) to the 5 V level of the rising edge of the VO signal.
29. Common-mode transient immunity at output HIGH state is the maximum tolerable negative dVCM / dt on the trailing
edge of the common-mode pulse, VCM, to assure the output remains in HIGH state (i.e., VO > 15 V or VFAULT > 2 V).
30. Common-mode transient immunity at output LOW state is the maximum positive tolerable dVCM / dt on the leading
edge of the common-mode pulse, VCM, to ensure the output remains in LOW state (i.e., VO < 1.0 V or
VFAULT < 0.8 V).
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
10
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
23. The time from DESAT threshold is exceeded until the FAULT output goes LOW.
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Timing Diagrams
IF
tR
tF
90%
50%
10%
VO
tPLH
tPHL
Figure 3. tPLH, tPHL, tR, and tF Timing Diagram
tDESAT(LOW)
IF
Reset Initiated Upon
the Next IF Turn-On.
6.5V
50%
VDESAT
tDESAT(10%)
tBLANK
90%
VO
10%
tDESAT(90%)
FAULT
tRESET(FAULT)
50%
50%
tDESAT(FAULT)
tDESAT(MUTE)
Figure 4. Definitions for DESAT, VO and FAULT Timing Waveforms
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
11
7
IOH – HIGH LEVEL OUTPUT CURRENT (A)
IF – INPUT FORWARD CURRENT (mA)
100.00
10.00
1.00
100°C
0.10
0.01
0.8
1.0
25°C
-40°C
1.2
1.4
1.6
6
5
4
VOH = VDD – 6 V
3
VOH = VDD – 3 V
2
1
-40
1.8
ILED1+ = 10 mA
VDD – VSS = 30 V
-20
0
VF – INPUT FORWARD VOLTAGE (V)
Figure 5. Input Forward Current (IF)
vs. Voltage (VF)
VOH – VDD – HIGH LEVEL OUTPUT VOLTAGE (V)
IOL – LOW LEVEL OUTPUT CURRENT (A)
6
VOL = VSS + 6 V
5
4
VOL = VSS + 3 V
3
2
ILED1+ = 0 A
VDD – VSS = 30 V
-20
0
20
40
60
60
80
100
80
100
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
ILED1+ = 10 mA
VDD – VSS = 30 V
IOH = -100 mA
-0.30
-40
-20
0
TA – TEMPERATURE (°C)
20
40
60
80
100
TA – TEMPERATURE (°C)
Figure 8. High Level Output Voltage (VOH – VDD)
vs. Temperature
Figure 7. Low Level Output Current (IOL)
vs. Temperature
0.20
30.0
VOH – HIGH LEVEL OUTPUT VOLTAGE (V)
V OL – LOW LEVEL OUTPUT VOLTAGE (V)
40
Figure 6. High Level Output Current (IOH)
vs. Temperature
7
1
-40
20
TA – TEMPERATURE (°C)
0.15
0.10
0.05
0
-40
ILED1+ = 0 A
VDD – VSS = 30 V
IOL = 100 mA
-20
29.5
TA = -40°C
29.0
28.5
ILED1+ = 10 mA
VDD – VSS = 30 V
28.0
0
20
40
60
80
100
0
TA – TEMPERATURE (°C)
0.2
0.4
0.6
0.8
1.0
IOH – HIGH LEVEL OUTPUT CURRENT (A)
Figure 10. High Level Output Voltage (VOH)
vs. High Level Output Current (IOH)
Figure 9. Low Level Output Voltage (VOL)
vs. Temperature
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
25°C
100°C
www.fairchildsemi.com
12
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Typical Performance Characteristics
3.0
ILED1+ = 0 A
VDD – VSS = 30 V
IDD – OUTPUT SUPPLY CURRENT (mA)
VOL – LOW LEVEL OUTPUT VOLTAGE (V)
4
3
25°C
2
TA = 100°C
-40°C
1
2.8
2.6
IDDL
2.4
2.2
ILED1+ = 0 A (IDDL) / 10 mA (IDDH)
VDD – VSS = 30 V
VO = Open
0
0
0.5
1.0
1.5
2.0
IDDH
2.0
-40
2.5
-20
0
Figure 11. Low Level Output Voltage (VOL)
vs. Low Level Output Current (IOL)
60
80
100
-0.15
ICHG – BLANKING CAPACITOR CHARGE
CURRENT (mA)
IDD – OUTPUT SUPPLY CURRENT (mA)
40
Figure 12. Output Supply Current (IDD)
vs. Temperature
3.0
2.5
IDDL
IDDH
2.0
ILED1+ = 0 A (IDDL) / 10 mA (IDDH)
VDD – VSS = 30 V
VO = Open
1.5
15
20
25
-0.20
-0.25
ILED1+ = 10 mA
VDD – VSS = 30 V
VDESAT = 2V
-0.30
-40
30
-20
0
20
40
60
80
VDD – OUTPUT SUPPLY VOLTAGE (V)
TA – TEMPERATURE (°C)
Figure 13. Output Supply Current (IDD)
vs. Voltage (VDD)
Figure 14. Blanking Capacitor Charge
Current (ICHG) vs. Temperature
100
3.0
ICLAMPL – CLAMP LOW LEVEL SINKING
CURRENT (A)
7.00
VDESAT – DESAT THRESHOLD (V)
20
TA – TEMPERATURE (°C)
IOL – LOW LEVEL OUTPUT CURRENT (A)
6.75
6.50
6.25
ILED1+ = 10 mA
VDD – VSS = 30 V
6.00
-40
-20
0
20
40
60
80
2.0
1.5
1.0
0.5
ILED1+ = 0 mA
VDD – VSS = 30 V
VCLAMP = VSS + 2.5V
0.0
-40
100
TA – TEMPERATURE (C)
-20
0
20
40
60
80
100
TA – TEMPERATURE (°C)
Figure 15. DESAT Threshold (VDESAT)
vs. Temperature
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
2.5
Figure 16. Clamp Low Level Sinking
Current (ICLAMPL) vs. Temperature
www.fairchildsemi.com
13
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Typical Performance Characteristics (Continued)
250
VCC = 5.5 V
ILED2 = 10 mA
100°C
tP – PROPAGATION DELAY (ns)
I FAULTL – FAULT LOGIC LOW OUTPUT CURRENT (mA)
10
8
25°C
6
4
-40°C
2
0
0
1
2
3
4
200
tPLH
150
tPHL
100
50
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
VDD – VSS = 30 V
Rg = 10 Ω, Cg = 10 nF
0
-40
5
0
60
80
100
tP – PROPAGATION DELAY (ns)
250
200
tPLH
150
tPHL
100
50
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
Rg = 10 Ω, Cg = 10 nF
0
15
20
25
200
tPHL
100
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
VDD – VSS = 30 V
Cg = 10 nF
50
0
30
tPLH
150
0
10
20
t DESAT(90%) – DESAT SENSE TO 90% V DELAY (µs)
O
250
200
tPLH
tPHL
100
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
VDD – VSS = 30 V
Rg = 10 Ω
50
0
10
20
30
40
50
C g – LOAD CAPACITANCE (nF)
Figure 21. Propagation Delay (tP)
vs. Load Capacitance (Cg)
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
40
50
Figure 20. Propagation Delay (tP)
vs. Load Resistance (Rg)
Figure 19. Propagation Delay (tP)
vs. Supply Voltage (VDD)
150
30
R g – LOAD RESISTANCE (Ω)
VDD – SUPPLY VOLTAGE (V)
tP – PROPAGATION DELAY (ns)
40
Figure 18. Propagation Delay (tP)
vs. Temperature
250
0
20
TA – TEMPERATURE (°C)
Figure 17. FAULT Logic Low Output
Current (IFAULTL) vs. Voltage (VFAULTL)
tP – PROPAGATION DELAY (ns)
-20
VFAULTL – FAULT LOGIC LOW OUTPUT VOLTAGE (V)
1.0
0.8
0.6
VDD – VSS = 30 V
0.4
VDD – VSS = 15 V
0.2
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω, Cg = 10 nF
0.0
-40
-20
0
20
40
60
80
100
TA – TEMPERATURE (°C)
Figure 22. DESAT Sense to 90% VO
Delay (tDESAT(90%)) vs. Temperature
www.fairchildsemi.com
14
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Typical Performance Characteristics (Continued)
t DESAT(10%) – DESAT SENSE TO 10% V DELAY (µs)
O
t DESAT(10%) – DESAT SENSE TO 10% V DELAY (µs)
O
5
4
VDD – VSS = 30 V
3
2
VDD – VSS = 15 V
1
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω, Cg = 10 nF
0
-40
-20
0
20
40
60
80
100
TA – TEMPERATURE (°C)
15
3
VDD – VSS = 30 V
2
VDD – VSS = 15 V
1
0
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Cg = 10 nF
10
10
VDD – VSS = 30 V
5
VDD – VSS = 15 V
0
10
20
30
40
20
100°C
100°C
0.40
25°C
-40°C
0.35
25°C
-40°C
0.30
0.25
4
5
t GP – TIME TO GOOD POWER (µs)
t RESETFAULT – RESET TO HIGH LEVEL FAULT
SIGNAL DELAY (µs)
100°C
25°C
4
25°C
-40°C
2
-40°C
0
8
9
9
10
VDD – VSS = 30 V
ILED1+ = 10 mA
4
3
2
1
0
-40
10
R F – FAULT LOAD RESISTANCE (kΩ)
-20
0
20
40
60
80
100
TA – TEMPERATURE (°C)
Figure 27. RESET to High Level Fault Signal
Delay (tRESET(FAULT)) vs. Fault Load Resistance (RF)
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
8
5
6
7
7
Figure 26. DESAT Sense to Low Level Fault
Signal Delay (tDESAT(FAULT)) vs.
Fault Load Resistance (RF)
VCC = 5.5 V
VCC = 3.3 V
6
6
R F – FAULT LOAD RESISTANCE (kΩ)
100°C
5
VCC = 5.5 V
VCC = 3.3 V
0.45
50
8
4
50
0.50
Figure 25. DESAT Sense to 10% VO
Delay (tDESAT(10%)) vs. Load Capacitance (Cg)
VDD – VSS = 30 V
40
VDD – VSS = 30 V
C g – LOAD CAPACITANCE (nF)
10
30
R g – LOAD RESISTANCE (Ω)
0.55
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω
0
4
Figure 24. DESAT Sense to 10% VO
Delay (tDESAT(10%)) vs. Load Resistance (Rg)
t DESAT(FAULT) – DESAT SENSE TO LOW LEVEL
FAULT SIGNAL DELAY (µs)
t DESAT(10%) – DESAT SENSE TO 10% VO DELAY (µs)
Figure 23. DESAT Sense to 10% VO
Delay (tDESAT(10%)) vs. Temperature
5
Figure 28. Time-to-Good Power (tGP)
vs. Temperature
www.fairchildsemi.com
15
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Typical Performance Characteristics (Continued)
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Typical Performance Characteristics (Continued)
t GP – TIME TO GOOD POWER (µs)
5
ILED1+ = 10 mA
TA = 25°C
4
3
2
1
0
15
20
25
30
VDD – OUTPUT SUPPLY VOLTAGE (V)
Figure 29. Time-to-Good Power (tGP) vs. Output Supply Voltage (VDD)
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
16
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
VLED1–
VSS
12
0.1µF
5
0.1µF
+
–
10mA
0A
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VE
30V
VO
+
–
0.1µF
Figure 30. Threshold Input Current Low-to-High (IFLH) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
0.1µF
0.1µF
+
–
2V
0V
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
+
–
VE
30V
VO
+
–
0.1µF
Figure 31. Threshold Input Voltage High-to-Low (VFHL) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
0.1µF
VLED1–
5
Period = 5ms
PW = 10μs
+
–
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VIN
0.1µF
VSS 12
6
10mA
0.1µF
IOH
47µF
+
–
+
–
VO
VE
30V
0.1µF
47µF
+
–
RM
Figure 32. High Level Output Current (IOH) Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
17
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
0.1µF
Period = 5ms
PW = 4.99ms
+
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VIN
–
+
–
IOL
6
10mA
0.1µF
VE
30V
0.1µF
+
–
47µF
VO
0.1µF
47µF
+
–
RM
Figure 33. Low Level Output Current (IOL) Test Circuit
FOD8332
VCC
+
–
0.1µF
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS 12
4.7kΩ
VFAULT
VLED1+
VO
7
VLED1+
VCLAMP 10
8
VLED1–
VSS
6
10mA
VIN
11
100pF
0.1µF
VDESAT
0.1µF
+
–
IOLF
VO
10Ω
VE
30V
+
–
0.1µF
10nF
9
RM
Figure 34. Low Level Output Current During Fault Condition (IOLF) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
0.1µF
0.1µF
+
–
100mA
5
VLED1–
VSS 12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VOH
VE
30V
+
–
0.1µF
10mA
Figure 35. High Level Output Voltage (VOH) Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
18
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
0.1µF
6
VLED1+
VO
11
0.1µF
+
–
30V
+
–
VOL
VE
0.1µF
100mA
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
Figure 36. Low Level Output Voltage (VOL) Test Circuit
FOD8332
1
GND
VE
2
VCC
VLED2+ 15
3
FAULT
DESAT
14
4
GND
VDD
13
VLED1–
VSS
12
16
IEH
0.1µF
5
0.1µF
IDDH
+
–
VE
30V
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
+
–
0.1µF
10mA
Figure 37. High Level Supply Current (IDDH), VE High Level Supply Current (IEH) Test Circuit
FOD8332
1
GND
VE
2
VCC
VLED2+ 15
3
FAULT
DESAT
14
4
GND
VDD
13
VLED1–
VSS
12
16
IEL
0.1µF
5
0.1µF
IDDL
+
–
VE
30V
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
+
–
0.1µF
Figure 38. Low Level Supply Current (IDDL), VE Low Level Supply Current (IEL) Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
19
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS 12
4.7k Ω
+
–
0.1µF
8V
+
–
VCC
1
0V
0.1µF
VDESAT
ICHG
IDSCHG
0.1µF
+
–
VE
30V
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
+
–
0.1µF
10mA
Figure 39. DESAT Threshold (VDESAT), Blanking Capacitor Charge Current (ICHG),
Blanking Capacitor Discharge Current (IDSCHG) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
0.1µF
6
10mA
0.1µF
+
–
VO
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
+
–
15V
VE
0.1µF
0V
0V
VUVLO+
VUVLO–
Figure 40. Under-Voltage Lockout Threshold (VUVLO+ / VUVLO-), Under-Voltage Lockout Threshold
Hysteresis (UVLOHYS) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
VLED1+
VO
11
0.1µF
6
0.1µF
+
–
+
–
30V
VE
0.1µF
50Ω
10mA
0A
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
5V
VTCLAMP +
–
0V
Figure 41. Clamping Threshold Voltage (VCLAMP_THRES) Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
20
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
0.1µF
0.1µF
+
–
VE
30V
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
6
+
–
ICLAMPL
+
–
0.1µF
2.5V
Figure 42. Clamp Low Level Sinking Current (ICLAMPL) Test Circuit
FOD8332
ICCH
15V
0.1µF
+
–
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VFAULT
Figure 43. FAULT High Level Supply Current (ICCH) Test Circuit
FOD8332
ICCL
15V
0.1µF
+
–
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VFAULT
0.1µF
16mA
Figure 44. FAULT Low Level Supply Current (ICCL) Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
21
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332
+
–
5.5V
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
0.1µF
IFAULTH
5.5V
1
+
–
Figure 45. FAULT High Level Output Current (IFAULTH) Test Circuit
FOD8332
5.5V
+
–
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
0.1µF
VFAULTL
+
1.1mA –
10mA
0.1µF
Figure 46. FAULT Low Level Output Voltage (VFAULTL) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
VLED1–
VSS
12
0.1µF
5
6
VLED1+
VO
11
0.1µF
+
–
VO
10Ω
10mA
f = 10kHz
DC = 50%
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
VIN
VE
30V
+
–
0.1µF
10nF
RM
Figure 47. Propagation Delay (tPLH, tPHL), Rise Time(tR), Fall Time (tF),
Pulse Width Distortion (PWD) Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
22
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332
VCC
+
–
0.1µF
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
4.7k Ω
VFAULT
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
6
10mA
VIN
100pF
0.1µF
VDESAT
0.1µF
+
–
VE
30V
VO
+
–
10Ω
0.1µF
10nF
RM
Figure 48. DESAT Sense Delay (tDESAT(90%)), tDESAT(10%)), tDESAT(LOW)), DESAT Sense to
Low Level FAULT Signal Delay (tDESAT(FAULT)), Reset to High Level FAULT Signal Delay (tRESET(FAULT)),
DESAT Input Mute (tDESAT(MUTE)) Test Circuit
FOD8332
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
VSS
9
0.1µF
10mA
8
VLED1–
0.1µF
+
–
VE
20V
VO
0.1µF
tUVLO tr = tf = 1ms
TGP
tr = tf = 10μs
Figure 49. Under-Voltage Lockout Delay (tUVLO), Time-to-Good-Power (tGP) Test Circuit
FOD8332
5V
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
4.7kΩ
+
–
15pF
or 1nF
0.1µF
360Ω
Scope
0.1μF
10Ω
25V
+
–
10nF
VCM
Figure 50. Common-Mode Low (CML) LED1-Off Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
23
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Test Circuits (Continued)
FOD8332
5V
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
4.7kΩ
+
–
15pF
or 1nF
0.1µF
360Ω
Scope
25V
0.1μF
+
–
10Ω
10nF
VCM
Figure 51. Common-Mode High (CMH) LED1-On Test Circuit
FOD8332
5V
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
Scope 4.7kΩ
+
–
15pF
or 1nF
0.1µF
360Ω
0.1μF
10Ω
25V
+
–
10nF
VCM
Figure 52. Common-Mode High (CMH) LED2-Off Test Circuit
FOD8332
5V
1
GND
2
VE
16
VCC
VLED2+
15
3
FAULT
DESAT
14
4
GND
VDD
13
5
VLED1–
VSS
12
6
VLED1+
VO
11
7
VLED1+
VCLAMP
10
8
VLED1–
VSS
9
Scope 4.7kΩ
+
–
15pF
or 1nF
0.1µF
360Ω
0.1μF
10Ω
25V
+
–
10nF
VCM
Figure 53. Common-Mode High (CML) LED2-On Test Circuit
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
24
–
+
1
GND1
2
3
FOD8332
VE
16
VCC
VLED2+
15
FAULT
DESAT
14
0.1µF
0.1µF
RF
+HVDC
4
GND
VDD
13
5
VLED–
VSS
12
6
VLED+
VO
11
10
7
VLED+
VCLAMP
8
VLED–
VSS
Q1 + VCE
0.1µF
RG
–
–
+
Micro Controller
100Ω
CF
RLED
CBLANK
DDESAT
Q2 +
9
3-Phase
AC
VCE
–
–HVDC
Figure 54. Recommended Application Circuit
Functional Description
The functional behavioral of FOD8332 is illustrated by
the detailed internal schematic shown in Figure 55.
Figure 55 and the timing diagrams explain the interaction
and sequence of internal and external signals.
250μA
+
–
14
VLED1+ 6, 7
VLED1–
16
Delay
5, 8
DESAT
VDESAT
VE
UVLO Comparator
–
+
13
VDD
VUVLO
11
VO
50x
VCC
FAULT
2
1x
9
3
1, 4
GND
VLED2+
+
–
10
VSS
VCLAMP
2V
25x
Figure 55. Detailed Internal Behavioral Schematic
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
25
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Application Information
Fault Condition
Reset
IF
Blanking
Time
6.5V
VDESAT
VO
FAULT
Figure 56. Operating Relationsip Among Desaturation Voltage (DESAT), Fault Output (FAULT),
and Reset Conditions
1. LED Input and Operation Explanation
when the current flowing from the anode to the cathode
(LED1) is greater than IFLH and the forward voltage VF is
greater than VF(MIN). The timing relationship between
the LED input and gate driver output is illustrated in
Figure 3. When a fault is detected, the gate driver ouptut
IC immediately enters “soft” turn-off mode, where the
output voltage changes slowly from HIGH to LOW state.
This also disables the gate control input on the gate
driver IC side for a minimum mute time of 10 µs.
FOD8332 is an advanced IGBT gate-drive optocoupler
capable of driving most 1200 V / 150 A IGBTs and power
MOSFETs in motor control and inverter applications.
The following section describes driving IGBT, but is also
applicable to driving MOSFET. Adjust the VDD supply
based on the gate threshold voltages. Critical protection
features and controls are incorporated to simplify the
design and improve reliability. The device includes an
IGBT desaturation detection protection and a FAULT
status output.
The FAULT output, which is open-collector configuration, is latched to LOW state to report a fault status to the
microcontroller. It is only reset or pulled back to HIGH
when LED1 is pulled from LOW to HIGH again.
This highly integrated device consists of two highperformance AlGaAs LEDs and two integrated circuits.
LED1 directly controls the isolated gate driver IC output,
while the returned optical signal path is transmitted by
LED2, which reports the fault status through the opencollector fault-sense IC output.
The active Miller clamp function avoids the need of
negative gate driving in most applications and allows the
use of a simple bootstrap supply for the high-side driver.
2. Gate Driver Output
The control LED input and the fault-sense IC output can
be connected to a standard 3.3 V / 5 V DSP or
microcontroller. The gate driver output can be connected
to the gate of the power devices on the high-voltage side.
A typical recommended application is shown in Figure
54. A typical shunt LED drive can be used to improve
noise immunity. The LED is connected in parallel with
the bipolar transistor switch, creating a current shunt
drive. Common-mode transients from the load coupling
via the package capacitance can be coupled into a lowimpedance path, either the conducting LED or the on
resistance of the conducting bipolar transistor,
increasing its noise immunity.
A pair of PMOS and NMOS make up the output driver
stage, which facilitates close to rail-to-rail output swing.
This feature allows tight control of gate voltage during
on-state and short-circuit conditions.
The output driver can typically sink 2.5 A and source
2.5 A at room temperature. Due to the low RDS(ON) of the
MOSFETs, the power dissipation is lower than bipolartype driver output stages. The absolute maximum rating
of the output peak current, IO(PEAK), is 3 A. Careful
selection of the gate resistor, RG, is required to avoid
violation of this rating. For charging and discharging, the
RG value is approximated by:
RG = VCC – VEE – VOL / IOL(PEAK)
During normal operation, when no fault is detected,
LED1 controls the gate driver output. VO is set to HIGH
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
(1)
www.fairchildsemi.com
26
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Normal
Operation
nominal blanking time can be calculated using external
capacitance (CBLANK), FAULT threshold voltage
(VDESAT), and DESAT charge current (ICHG):
tBLANK = CBLANK x VDESAT / ICHG
With a recommended 100 pF DESAT capacitor, the
nominal blanking time is:
100 pF x 6.5 V / 250 µA = 2.6 µs
4. Soft Turn-Off
The soft turn-off feature ensures the safe shutdown of
the IGBT under fault condition. The gate-driver voltage
VO turns off the IGBT in a controlled slow manner. This
reduces the voltage spike on the collector of the IGBT.
Without this, the IGBT would see a heavy spike on the
collector, resulting in a permanent damage to the device
when it’s turned off immediately. The VO is pulled to
LOW slowly in 4 µs.
When VDD supply goes below VUVLO, which is the
designated ULVO threshold at the comparator, VO is
pulled to LOW state regardless of photodetector output.
When VO is HIGH and desaturation is detected, VO turns
off slowly as it is pulled LOW by the 1XNMOS device.
The input to the fault-sense circuitry is latched to HIGH
state and turns on the LED2. The fault-sense signal
remains in HIGH state until LED1 is switched from LOW
to HIGH. When VO goes below 2 V, the 50XNMOS
device turns on, clamping the IGBT gate firmly to VSS.
5. Under-Voltage Lockout (UVLO)
Under-Voltage detection prevents the application of
insufficient gate voltage to the IGBT. This could be
dangerous, as it would drive the IGBT out of saturation
and into the linear operation where losses are very high
and the IGBT quickly overheats. This feature ensures
proper operation of the IGBTs. The output voltage, VO,
remains LOW irregardless of the inputs, as long as the
supply voltage, VDD – VE, is less than VUVLO+ during
power up. When the supply voltage falls below VUVLO- ,
VO goes LOW, as illustrated in Figure 57.
3. Desaturation Protection, FAULT Output and
FAULT RESET
Desaturation detection protects the IGBT in short circuit
by monitoring the collector-emitter voltage of the IGBT
when it’s turned on. When the DESAT pin voltage goes
above the threshold voltage, a short-circuit condition is
detected and the driver output stage executes a “soft”
IGBT turn-off and is eventually driven LOW. This
sequence is illustrated in Figure 56. The FAULT opencollector output is triggered active LOW to report a
desaturation error. The gate driver output is muted for
minimum of 10 µs. All input LED signals are ignored
during the mute period to allow the driver to completely
soft shutdown the IGBT. The fault mechanism is reset by
the next LED turn-on after the tRESET(FAULT) (see
Figure 56). During OFF state of the IGBT, or if VO is
LOW, the fault sense circuitry is disabled to prevent false
fault signals.
6. Active Miller Clamp Function
An active Miller clamp feature allows the sinking of the
Miller current to ground during a high-dV/dt situation.
Instead of driving the IGBT gate to a negative supply
voltage to increase the safety margin, the device has a
dedicated VCLAMP pin to control the Miller current.
During turn-off, the gate voltage of the IGBT is monitored
and the VCLAMP output is activated when the gate
voltage goes below 2 V (relative to VSS).
The Miller clamp NMOS transistor is then turned on and
provides a low resistive path for the Miller current, which
helps prevent a self-turn-on due to the parasitic Miller
capacitor in power switches. The clamp voltage is VSS +
2.5 V, typical for a Miller current up to 1100 mA.
The DESAT comparator should be disabled for a short
tme period (blanking time) before the IGBT turns on to
allow the collector voltage to fall below the DESAT
threshold.
In this way, the VCLAMP function does not affect the turnoff characteristic. It helps to clamp the gate to the low
level throughout the turn-off time. During turn-on, where
the input of the driver is activated, the VCLAMP function is
disabled or opened.
This blanking period protects against false triggering of
the DESAT while the IGBT is turning on. The blanking
time is controlled by the internal DESAT charge current,
the DESAT voltage threshold, and the external DESAT
capacitor (capacitor between DESAT and VE pin). The
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
(2)
www.fairchildsemi.com
27
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
As shown in Figure 55, the gate driver output is
influenced by signals from the photodetector circuitry,
the UVLO comparator, and the DESAT signals. Under
no-fault condition, normal operation resumes while the
supply voltage is above the UVLO threshold and the
output of the photodetector drives the MOSFETs of the
output stage. The logic circuitry of the output stage
ensures that the push-pull devices are never turned ON
simultaneously. When the output of the photodetector is
HIGH, output VO is pulled to HIGH state by turning on
the PMOS. When the output of the photodetector is
LOW, VO is pulled to LOW state by turning on the
50XNMOS.
IF
VUVLO+
VUVLO–
VDD – VE
tGP
VO
Figure 57. Time to Good Power
7. Time to Good Power
9. DESAT Pin Protection
During fast power up (e.g. bootstrap power supply), the
LED is off and the output of the gate driver should be in
the LOW or OFF state. Sometimes, race conditions exist
that cause the output to follow VDD until all of the circuits
in the output IC stabilize. This condition can result in
output transitions or transients that are coupled to the
driven IGBT. These glitches can cause the high- and
low-side IGBTs to conduct shoot-through current that
can damage the power semiconductor devices.
During turn off, especially with inductive load, a large
instantaneous forward-voltage transient can appear on
the freewheeling diode of the IGBT. A large negative
voltage spike on the DESAT pin can result and draw
substantial current out of the gate driver IC if there is not
current-limiting resistor. To limit this current, a 100 Ω to
1 kΩ resistor should be inserted in series with the
DESAT diode. The added resistance does not change
the DESAT threshold or the DESAT blanking time.
Fairchild has introduced a initial turn-on delay, called
“time to good power.” This delay, typically 2.0 µs, is only
present during the initial power-up of the device. If the
LED is ON during the initial turn-on activation, low-tohigh transition at the output of the gate driver only occurs
2.0 µs after the VDD power is applied.
The DESAT diode protects the gate driver IC from high
voltages when the IGBT is turning off, while allowing a
forward ICHG current of 250 µA to be conducted to sense
the IGBT’s saturated collector to emitter voltage when
the IGBT is turned on. A fast-recovery diode, trr below
75 ns, with sufficient reverse-voltage rating, should be
used. Fairchild offers many of these ultra-fast diodes/
rectifiers, such as ES1J-600V, with trr at 35 ns.
8. Dual Supply Operation – Negative Bias at VSS
The IGBT’s off-state noise immunity can be enhanced by
providing a negative gate-to-emitter bias when the IGBT
is in OFF state. This static off-state bias can be supplied
by connecting a separate negative voltage source
between the VE (pin 16) and VSS (pin 9 and pin 12). The
primary ground reference is the IGBT’s emitter
connection, VE (pin 16). The under-voltage lockout
threshold and desaturation voltage detection are
referenced to the IGBT’s emitter (VE) ground.
If two diodes or more are used, the required maximum
reverse voltage can be reduced by half or accordingly.
This modifies the trigger level for a fault condition. The
sum of the DESAT diode forward-voltage and the IGBT
collector-emitter VCE voltage form the voltage at the
DESAT pin. The trigger level for a fault condition given by:
VCE@FAULT = VDESAT – n x VF
where n is the number of the DESAT diodes.
The negative voltage supply at VSS appears at the gate
drive output, VO, when in LOW state. When the input
drives the output HIGH, the output voltage, VO, has the
potential of the VDD and VSS. Proper power supply
bypass capacitors are added to provide paths for the
instantaneous gate charging and discharging currents.
The Schottky diode is recommended connected
between VE and VSS to protect against a reverse voltage
greater than 0.5 V. The VCLAMP (pin 10) should be
connected to VSS when not in use.
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
(3)
10. Pull-Up Resistor on FAULT Pin
The FAULT pin is an open-collector output and can be
connected as wire-OR operation with other types of
protection (e.g., over-temperature, over-voltage, overcurrent) to alert the microcontroller. Being an opencollector output, it requires a pull-up resistor to provide a
normal high output voltage level. This resistor value
must be properly considered based on various IC
interface requirements. The sinking current capability is
given by IFAULTL.
www.fairchildsemi.com
28
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
IFLH
A possible implementation is by a discrete NPN/PNP
totem-pole configuration. These booster transistors
should be fast switching and have sufficient current gain
to deliver the desired peak output current.
If larger gate drive capability is needed for large IGBT
modules or parallel operation, an output booster stage
may be added to driver for optimum performance.
FOD8332
VE
16
VLED2+
15
DESAT
14
VDD
13
VSS
12
VO
11
VCLAMP
10
0.1µF
CBLANK
DDESAT
100Ω
–
+
VSS
0.1µF
RG
9
–
+
Figure 58. Output Booster Stage for Increased Output Drive Current
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
29
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
11. Increasing the Output Drive Current Using an
External Booster Stage
Part Number
Package
Packing Method
FOD8332
SO 16-Pin
Tube (50 units per tube)
FOD8332R2
SO 16-Pin
Tape and Reel (750 units per reel)
FOD8332V
SO 16-Pin, DIN EN/IEC 60747-5-5 option
Tube (50 units per tube)
FOD8332R2V
SO 16-Pin, DIN EN/IEC 60747-5-5 option
Tape and reel (750 units per reel)
All packages are lead free per JEDEC: J-STD-020B standard.
Marking Information
1
2
8332 V
J
D X YYKK
4
6
5
3
8
7
Definitions
1
Fairchild logo
2
Device number, e.g., ‘8332’ for FOD8332
3
DIN EN/IEC60747-5-5 Option (only appears on component
ordered with this option)
4
Plant code, e.g., ‘D’
5
Alphabetical year code, e.g., ‘E’ for 2014
6
Two-digit work week ranging from ‘01’ to ‘53’
7
Lot traceability code
8
Package assembly code, e.g., ‘J’
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
www.fairchildsemi.com
30
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Ordering Information
FOD8332 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
and Active Miller Clamp
Reflow Profile
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
Max. Ramp-Up Rate = 3 °C/s
Max. Ramp-Down Rate = 6 °C/s
tP
Tsmax
tL
Preheat Area
Tsmin
ts
120
240
360
Time 25 °C to Peak
Time (seconds)
Figure 59. Relow Profile
Profile Freature
Pb-Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-Down Rate (TP to TL)
6°C/second maximum
Time 25°C to Peak Temperature
©2013 Fairchild Semiconductor Corporation
FOD8332 Rev. 1.0.2
8 minutes maximum
www.fairchildsemi.com
31
0.20 C A-B
1.27 TYP
2X
10.30
16
A
0.64 TYP
9
D
9
7.31
9.47
11.63
16
3.75
10.30
7.50
(2.16)
0.10 C D
2X
8
1
PIN ONE
INDICATOR
0.33 C
2X 8 TIPS
1.27
0.51 (16X)
0.31
B
0.51 TYP
0.25
1
8
LAND PATTERN
RECOMMENDATION
C A-B D
A
0.10 C
3.0 MAX
2.35±0.10
0.10 C
16X
SEATING PLANE
0.30±0.15
C
NOTES: UNLESS OTHERWISE SPECIFIED
(1.42)
(R0.17)
(R0.17)
GAUGE
PLANE
0.25
0.19
8°
0°
0.25
SEATING
PLANE
1.27
0.40
C
SCALE: 3:1
A) DRAWING REFERS TO JEDEC MS-013,
VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS
D) DRAWING CONFORMS TO ASME
Y14.5M-1994
E) LAND PATTERN STANDARD:
SOIC127P1030X275-16N
F) DRAWING FILE NAME: MKT-M16FREV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
工商网监
湘ICP备2023018690号
