FOD8802B

Dual Channel OptoHiTt Series, High-Temperature Phototransistor Optocoupler in Small Outline 8-Pin Package FOD8802 Series www.onsemi.com Description The FOD8802 dual channel optocoupler is a best−in−class phototransistor, optocoupler utilizing ON Semiconductor leading−edge proprietary process technology to achieve high operating temperature performance, up to 125°C. It consists of two aluminum gallium arsenide (AlGaAs) infrared light emitting diode optically coupled to two phototransistors, in a small outline, 8−pin SOIC package. It delivers consistent current transfer ratio at very low input current over temperature. The AlGaAs light ouput degradation performance is significantly better than the commodity optocoupler products that uses the standard GaAs, extending lifetime and reducing the guardband requirements to compensate for temperature drift. The input−output isolation voltage, Viso, is rated at 2500 VACRMS. SOIC8 M SUFFIX CASE 751DZ MARKING DIAGRAM Features • Excellent CTR Linearity at High Temperature • CTR at Very Low Input Current, IF • High Isolation Voltage Regulated by Safety Agency, UL1577, • • 2500 VACRMS for 1 min. Applicable to Infrared Ray Reflow, 260°C These are Pb−Free Devices Typical Applications • • • • • Primarily Suited for DC−DC Converters For Ground Loop Isolation, Signal to Noise Isolation Communications – Adapters, Chargers Consumer – Appliances, Set Top Boxes Industrial – Power Supplies, Motor Control, Programmable Logic Control 1. 2. 3. 4. 5. 6. ON = Corporate Name 8802x = Device Number V = DIN EN/IEC60747−5−5 Option X = One−Digit Year Code YY = Digit Work Week S = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2020 November, 2020 − Rev. 1 1 Publication Order Number: FOD8802/D FOD8802 Series Table 1. SAFETY AND INSULATION RATINGS As per DIN_EN/IEC60747−5−5. this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Characteristics Parameter < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I–IV < 300 VRMS I–III Climatic Classification 40/125/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over−Voltage 4,000 Vpeak External Creepage w4 mm External Clearance w4 mm w 0.4 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) TS Case Temperature (Note 1) 150 °C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 109 W FOD8802 Series Table 2. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Units TSTG Storage Temperature −40 to +150 °C TOPR Operating Temperature −40 to +125 °C Junction Temperature −50 to +150 °C 260 for 10 sec °C Continuous Forward Current 20 mA Reverse Input Voltage 6 V Power Dissipation (Note 2) 40 mW TJ TSOL Lead Solder Temperature (Refer to Reflow Temperature Profile) EMITTER IF(average) VR PDLED DETECTOR Continuous Collector Current 30 mA VCEO Collector−Emitter Voltage 75 V VECO Emitter−Collector Voltage 7 V PDC Collector Power Dissipation (Note 2) 150 mW IC(average) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Table 3. ELECTRICAL CHARACTERISTICS Apply over all recommended conditions (TA = −40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Parameter Symbol VF Conditions Forward Voltage IF = 1 mA Forward Voltage Coefficient IF = 1 mA IR Reverse Current VR = 6 V CT DVF/ DTA Min. 1.0 Typ. Max. Units 1.35 1.8 V mV/°C −1.6 10 mA Terminal Capacitance V = 0 V, f = 1 MHz 30 pF BVCEO Collector−Emitter Breakdown Voltage IC = 0.5 mA, IF = 0 mA 75 130 V BVECO Emitter−Collector Breakdown Voltage IE = 100 mA, IF = 0 mA 7 12 V Collector Dark Current VCE = 75 V, IF = 0 mA, TA = 25°C 100 nA VCE = 50 V, IF = 0 mA 50 mA VCE = 5 V, IF = 0 mA 30 mA ICEO CCE Capacitance VCE = 0 V, f = 1 MHz 8 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FOD8802 Series Table 4. TRANSFER CHARACTERISTICS Apply over all recommended conditions (TA = −40°C to +125°C unless otherwise specified). TA = 25°C unless otherwise specified. Symbol Parameter Device FOD8802A FOD8802B CTRCE Current Transfer Ratio (collector−emiiter) FOD8802C FOD8802D FOD8802A FOD8802B CTRCE(SAT) Saturated Current Transfer Ratio (collector−emiiter) FOD8802C FOD8802D FOD8802A FOD8802B VCE(SAT) Saturation voltage FOD8802C FOD8802D Min. Typ. Max. IF = 1.0 mA, VCE = 5 V @ TA = 25°C Conditions 80 120 160 IF = 1.0 mA, VCE = 5 V 35 120 230 IF = 1.6 mA, VCE = 5 V 40 125 IF = 3.0 mA, VCE = 5 V 45 138 IF = 1.0 mA, VCE = 5 V @ TA = 25°C 130 195 260 IF = 1.0 mA, VCE = 5 V 65 195 360 IF = 1.6 mA, VCE = 5 V 70 202 IF = 3.0 mA, VCE = 5 V 75 215 IF = 1.0 mA, VCE = 5 V @ TA = 25°C 200 300 400 IF = 1.0 mA, VCE = 5 V 100 300 560 IF = 1.6 mA, VCE = 5 V 110 312 IF = 3.0 mA, VCE = 5 V 115 330 IF = 1.0 mA, VCE = 5 V @ TA = 25°C 100 400 IF = 1.0 mA, VCE = 5 V 45 560 IF = 1.6 mA, VCE = 5 V 50 IF = 3.0 mA, VCE = 5 V 55 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 65 108 IF = 1.0 mA, VCE = 0.4 V 30 108 IF = 1.6 mA, VCE = 0.4 V 25 104 IF = 3.0 mA, VCE = 0.4 V 20 92 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 90 168 IF = 1.0 mA, VCE = 0.4 V 45 168 IF = 1.6 mA, VCE = 0.4 V 40 155 IF = 3.0 mA, VCE = 0.4 V 35 132 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 140 238 IF = 1.0 mA, VCE = 0.4 V 75 238 IF = 1.6 mA, VCE = 0.4 V 65 215 IF = 3.0 mA, VCE = 0.4 V 55 177 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 70 IF = 1.0 mA, VCE = 0.4 V 35 IF = 1.6 mA, VCE = 0.4 V 30 IF = 3.0 mA, VCE = 0.4 V 25 245 380 % 380 0.17 0.40 IF = 1.6 mA, IC = 0.4 mA 0.16 0.40 IF = 3.0 mA, IC = 0.6 mA 0.15 0.40 IF = 1.0 mA, IC = 0.45 mA 0.17 0.40 IF = 1.6 mA, IC = 0.6 mA 0.16 0.40 IF = 3.0 mA, IC = 1.0 mA 0.16 0.40 IF = 1.0 mA, IC = 0.75 mA 0.18 0.40 IF = 1.6 mA, IC = 1.0 mA 0.17 0.40 IF = 3.0 mA, IC = 1.6 mA 0.17 0.40 IF = 1.0 mA, IC = 0.45 mA 0.40 IF = 1.6 mA, IC = 0.60 mA 0.40 IF = 3.0 mA, IC = 1.00 mA 0.40 4 % 150 IF = 1.0 mA, IC = 0.3 mA www.onsemi.com Units V FOD8802 Series Table 5. SWITCHING CHARACTERISTICS Apply over all recommended conditions (TA = −40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Parameter Symbol tON Turn On Time tOFF Turn Off Time Conditions Min. Typ. Max. Units 1 6 20 ms IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ IF = 1.6 mA, VCC = 5 V, RL = 4.7 kΩ 6 IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ 1 6 ms 20 ms IF = 1.6 mA, VCC = 5 V, RL = 4.7 kΩ 40 ms tR Output Rise Time (10% −90%) IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ 6 ms tF Output Fall Time (90% −10%) IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ 7 ms CMH Common Mode Rejection Voltage (Transient Immunity Output High) IF = 0 mA, VCC = 5 V, RL = 4.7kΩ VCM = 500 V (Note 3) 10 kV/ms CML Common Mode Rejection Voltage (Transient Immunity Output Low) IF = 1.6 mA, VCC = 5 V, RL = 4.7 kΩ VCM = 500 V (Note 3) 10 kV/ms 3. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common mode impulse signal, Vcm, to assure that the output will remain high. Table 6. ISOLATION CHARACTERISTICS Symbol Parameter Conditions Min Typ Max VISO Input−Output Isolation Voltage Freq = 60 Hz, t = 1.0 min, II−O ≤ 10 mA (Notes 4, 5) 2,500 VACRMS RISO Isolation Resistance VI−O = 500 V (Note 4) 1011 W CISO Isolation Capacitance Frequency = 1 MHz 0.6 4. Device is considered a two terminal device: Pins 1 and 2 are shorted together and Pins 3 and 4 are shorted together. 5. 2,500 VACRMS for 1 minute duration is equivalent to 3,000 VACRMS for 1 second duration. www.onsemi.com 5 Units pF FOD8802 Series TEST CIRCUIT VCC RL IF IF tR VO IF Monitor tF 90% RM 10% tON tOFF Figure 1. Switching Test Circuit and Waveform +5 V IF RL = 4.7 kΩ + VO Monitoring Node IF IF Monitor SW 500 V VCM 90% 10% tR RM VO (I F = 0 A) VCM tF VOH 2V VO (I F = 1.6 mA) Figure 2. Test Circuit for Instantaneous Common−Mode Rejection Voltage www.onsemi.com 6 0.8 V VOL FOD8802 Series TYPICAL PERFORMANCE CHARACTERISTICS 10 IC − COLLECTOR CURRENT (mA) IF − FORWARD CURRENT (mA) 100 10 TA = 125 °C TA = 25 °C TA = -40 °C 1 0.1 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 TA = 25 °C VCE = 5.0 V VCE = 0.4 V 1 0.1 0.1 1.8 1 VF − FORWARD VOLTAGE (V) Figure 4. Collector Current vs. Forward Current CTR(NORMALIZED) = CTR (IF) / CTR (IF = 1 mA) CTR − CURRENT TRANSFER RATIO (%) Figure 3. Forward Current vs. Forward Voltage 1000 VCE = 5.0 V TA = 25°C 100 10 0.1 1 10 VCE = 5.0 V TA = 25°C NORMALIZED TO IF = 1 mA 1 0.1 0.1 10 1 Figure 6. Normalized CTR vs. Forward Current CTR(NORMALIZED) = CTR (TA) / CTR (TA = 25 °C) CTR(NORMALIZED) = CTR (TA) / CTR (TA = 25 °C) Figure 5. Current Transfer Ratio vs. Forward Current 1.4 IF = 3.0 mA 1.0 IF = 1.6 mA 0.8 0.6 IF = 1.0 mA 0.4 VCE = 0.4 V 0.2 −40 −20 0 20 40 60 80 100 10 IF − FORWARD CURRENT (mA) IF − FORWARD CURRENT (mA) 1.2 10 IF − FORWARD CURRENT (mA) 120 140 TA - AMBIENT TEMPERATURE (°C) 1.4 VCE = 5.0 V 1.2 IF = 3.0 mA 1.0 IF = 1.6 mA 0.8 IF = 1.0 mA 0.6 0.4 0.2 −40 Figure 7. Normalized CTR vs. Ambient Temperature −20 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE (°C) Figure 8. Normalized CTR vs. Ambient Temperature www.onsemi.com 7 140 FOD8802 Series TYPICAL PERFORMANCE CHARACTERISTICS (continued) CTR − CURRENT TRANSFER RATIO (%) 100 IC − COLLECTOR CURRENT (mA) VCE = 5.0 V 10 IF = 3.0 mA IF = 1.6 mA 1 IF = 1.0 mA 0.1 −40 −20 0 20 40 60 80 100 120 180 VCE= 5V IF= 3mA 140 120 100 VCE= 0.4V IF= 3mA 80 60 −40 −20 0 TA - AMBIENT TEMPERATURE (°C) 100 10 1 0.1 0.01 −40 −20 0 20 40 60 80 100 SATURATION VOLTAGE (V) 1000 80 100 120 IF = 1 mA I CE = 0.70 mA 0.30 IF = 1.6 mA I CE = 0.99 mA 0.25 0.20 IF = 3.0 mA ICE = 1.55 mA 0.15 0.10 0.05 0.00 −40 120 −20 TA - AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE (°C) Figure 11. Collector Dark Current vs. Ambient Temperature Figure 12. Collector−Emitter Saturation Voltage vs. Ambient Temperature 30 1000 TA = 25 °C TA = 25 °C VCE = 5 V SWITCHING TIME (μs) 25 IF = 20 mA 20 IF = 15 mA 15 IF = 10 mA 10 IF = 5 mA IF = 1.6 mA f = 1 kHz 100 tOFF tF 10 tON 5 tR IF = 1 mA 0 60 0.35 VCE = 75 V VCE(SAT) − COLLECTOR−EMITTER ICEO − COLLECTOR DARK CURRENT (nA) 40 Figure 10. Current Transfer Ratio vs. Ambient Temperature 100000 IC − COLLECTOR CURRENT (mA) 20 VCE= 0.4V IF= 1.6mA VCE= 0.4V IF= 1mA TA - AMBIENT TEMPERATURE (°C) Figure 9. Collector Current vs. Ambient Temperature 10000 VCE= 5V IF= 1mA VCE= 5V IF= 1.6mA 160 0 1 2 3 4 1 5 VCE − COLLECTOR−EMITTER VOLTAGE (V) 1 10 100 RL - LOAD RESISTANCE (k ) Figure 13. Collector Current vs. Collector−Emitter Voltage Figure 14. Switching Time vs. Load Resistance www.onsemi.com 8 FOD8802 Series REFLOW PROFILE Figure 15. Reflow Profile Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp−up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. ORDERING INFORMATION (Note 6) Part Number Package Packing Method FOD8802A Small Outline 8−Pin Tube (100 units per tube) FOD8802AR2 Small Outline 8−Pin Tape and Reel (2,500 units per reel) FOD8802AV Small Outline 8−Pin DIN EN/IEC60747−5−5 Option (pending approval) Tube (100 units per tube) FOD8802AR2V Small Outline 8−Pin DIN EN/ IEC60747−5−5 Option (pending approval) Tape and Reel (2,500 units per reel) 6. The product orderable part number system listed in this table also applies to the FOD8802A, FOD8802B, FOD8802C and FOD8802D products. OptoHiT is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751DZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13733G SOIC8 DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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