FODM121BR2

4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers FODM121 Series, FODM124, FODM2701, FODM2705 www.onsemi.com Description The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4−pin mini−flat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. MFP4 3.85X4.4, 2.54P CASE 100AP Features • More than 5 mm Creepage/Clearance • Compact 4−Pin Surface Mount Package PIN CONNECTIONS (2.4 mm Maximum Standoff Height) • Current Transfer Ratio in Selected Groups: DC Input: G FODM121: 50–600% G FODM121A: 100–300% G FODM121B: 50–150% G FODM121C: 100–200% G FODM124: 100% MIN G FODM2701: 50–300% ♦ AC Input: G FODM2705: 50–300% Safety and Regulatory Approvals: ♦ UL1577, 3,750 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage This Device is Pb−Free and is RoHS Compliant ♦ • • ANODE 3 EMITTER CATHODE 2 Equivalent Circuit FODM121, FODM124, FODM2701 ANODE 4 COLLECTOR 1 CATHODE 2 3 EMITTER Equivalent Circuit FODM2705 Applications • • • • • 4 COLLECTOR 1 MARKING DIAGRAM Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver ON 121xx V X YY R ON 121xx V X YY R = ON Semiconductor Logo = Device Number = DIN EN/IEC60747−5−5 Option = One−Digit Year Code = Digit Work Week = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2006 July, 2021 − Rev. 3 1 Publication Order Number: FODM2705/D FODM121 Series, FODM124, FODM2701, FODM2705 SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89. For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 40/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥5 mm External Clearance ≥5 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm TS Case Temperature (Note 1) 150 °C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 109 W 1. Safety limit values – maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS TA = 25°C Unless otherwise specified. Symbol Parameter Value Unit TOTAL PACKAGE TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +110 °C Junction Temperature −40 to +125 °C Lead Solder Temperature 260 for 10 s °C TJ TSOL EMITTER IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1 ms pulse, 300 pps.) 1 A VR Reverse Voltage 6 V PD Power Dissipation 70 mW Derate linearly (Above 75°C) 1.41 mW/°C Continuous Collector Current 80 mA FODM121 Series, FODM124 80 V FODM2701, FODM2705 40 DETECTOR IC VCEO VECO PD Collector−Emitter Voltage Emitter−Collector Voltage 7 V Power Dissipation 150 mW Derate linearly (Above 80°C) 3.27 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 FODM121 Series, FODM124, FODM2701, FODM2705 ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise specified. Symbol Parameter Device Test Conditions Min Typ Max Unit V INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF IR Forward Voltage FODM121 Series, FODM124 IF = 10 mA 1.0 − 1.3 FODM2701 IF = 5 mA − − 1.4 FODM2705 IF = ±5 mA Reverse Current FODM121 Series, FODM124, FODM2701 VR = 5 V − − 5 mA Collector−Emitter Breakdown Voltage FODM121 Series, FODM124 IC = 1 mA, IF = 0 80 − − V 40 − − − − V 100 nA Detector BVCEO FODM2701, FODM2705 BVECO Emitter−Collector Breakdown Voltage All IE = 100 mA, IF = 0 7 ICEO Collector Dark Current All VCE = 40 V, IF = 0 − − CCE Capacitance All VCE = 0 V, f = 1 MHz − 10 FODM2701 IF = 5 mA, VCE = 5 V 50 − 300 FODM2705 IF = ±5 mA, VCE = 5 V 50 − 300 FODM121 IF = 5 mA, VCE = 5 V pF TRANSFER CHARACTERISTICS CTR DC Current Transfer Ratio 50 − 600 100 − 300 FODM121B 50 − 150 FODM121C 100 − 200 100 − 1200 FODM121A FODM124 VCE(SAT) IF = 1 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V 50 − − CTR Symmetry FODM2705 IF = ±5 mA, VCE = 5 V 0.3 − 3.0 Saturation Voltage FODM121 Series IF = 8 mA, IC = 2.4 mA − − 0.4 FODM124 IF = 1 mA, IC = 0.5 mA − − 0.4 FODM2701 IF = 10 mA, IC = 2 mA − − 0.3 % V FODM2705 IF = ±10 mA, IC = 2 mA − − 0.3 tr Rise Time (Non−Saturated) All IC = 2 mA, VCE = 5 V, RL = 100 W − 3 − ms tf Fall Time (Non−Saturated) All IC = 2 mA, VCE = 5 V, RL = 100 W − 3 − ms All 1 minute 3750 − − VACRMS ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage (Note 2) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Steady state isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 3 and 4 are common. www.onsemi.com 3 FODM121 Series, FODM124, FODM2701, FODM2705 TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified) 0.35 VCE(sat) − Collector−Emitter Saturation Voltage (V) IF − Forward Current (A) 100 TA = 110°C TA = 70°C TA = 25°C TA = 0°C TA = −40°C 10 0.8 1.0 1.2 1.4 1.6 0.25 IF = 8 mA IC = 2.4. mA 0.20 0.15 IF = 10 mA IC = 2 mA 0.10 0.05 0.00 −40 1 0.6 0.30 1.8 −20 0 VF − Forward Voltage (V) TA = 25°C IC − Collector Current (mA) CTR – Current Transfer Ratio (%) 80 100 120 100 TA = 25°C VCE = 10 V VCE = 5 V 100 VCE = 10 V VCE = 5 V 10 1 0.1 0.1 1 10 100 0.1 1 IF − Forward Current (mA) 10 100 IF − Forward Current (mA) Figure 3. Current Transfer Ratio vs. Forward Current (FODM121/2701/2705) Figure 4. Collector Current vs. Forward Current (FODM121/2701/2705) 40 100 TA = 25°C 10 IC − Collector Current (mA) IF = 25 mA IC − Collector Current (mA) 60 Figure 2. Collector−Emitter Saturation Voltage vs. Ambient Temperature (FODM121/2701/2705) 500 IF = 10 mA IF = 5 mA IF = 1 mA 1 IF = 0.5 mA 0.1 −40 −20 0 20 40 60 80 100 30 IF = 30 mA IF = 20 mA 20 IF = 10 mA 10 0 120 IF = 50 mA IF = 40 mA IF = 5 mA VCE = 5 V 0.01 40 TA − Ambient Temperature (5C) Figure 1. Forward Current vs. Forward Voltage 10 20 TA − Ambient Temperature (5C) IF = 1 mA 0 2 4 6 8 VCE − Collector−Emitter Voltage (V) Figure 5. Collector Current vs. Ambient Temperature (FODM121/2701/2705) Figure 6. Collector Current vs. Ambient Temperature (FODM121/2701/2705) www.onsemi.com 4 10 FODM121 Series, FODM124, FODM2701, FODM2705 TYPICAL PERFORMANCE CURVES (Continued) (TA = 25°C unless otherwise specified) 160 CTR – Normalized Current Transfer Ratio (%) 1000 100 10 1 0.1 −40 −20 0 20 40 60 80 100 140 120 100 80 60 40 20 −40 120 Normalized to TA = 25°C −20 0 20 40 60 80 100 120 TA − Ambient Temperature (5C) TA − Ambient Temperature (5C) Figure 7. Collector Dark Current vs. Ambient Temperature (FODM121/2701/2705) Figure 8. Normalized Current Transfer Ratio vs. Ambient Temperature (FODM121/2701/2705) 1000 Switching Time (ms) IF = 5 mA VCE = 5 V VCE = 40 V IF = 5 mA VCC = 5 V TA = 25°C 0.35 IF = 16 mA VCE(sat) − Collector−Emitter Saturation Voltage (V) ICEO − Collector Dark Current (nA) 10000 tOFF 100 tS 10 IF = 1 mA IC = 0.5 mA 0.30 0.25 0.20 0.15 0.10 0.05 tON 1 10 1 0.00 −40 100 0 20 40 60 80 100 120 RL − Load Resistance (kW) TA − Ambient Temperature (5C) Figure 9. Switching Time vs. Load Resistance (FODM121/2701/2705) Figure 10. Collector−Emitter Saturation Voltage vs. Ambient Temperature (FODM124) 500 50 TA = 25°C VCE = 0.5 V IC − Collector Current (mA) CTR – Current Transfer Ratio (%) −20 100 10 0.1 1 10 TA = 25°C VCE = 0.5 V 10 1 0.1 0.01 0.1 50 1 10 IF − Forward Current (mA) IF − Forward Current (mA) Figure 11. Current Transfer Ratio vs. Forward Current (FODM124) Figure 12. Collector Current vs. Forward Current (FODM124) www.onsemi.com 5 50 FODM121 Series, FODM124, FODM2701, FODM2705 TYPICAL PERFORMANCE CURVES (Continued) (TA = 25°C unless otherwise specified) 50 10 TA = 25°C IF = 5 mA IC − Collector Current (mA) IC − Collector Current (mA) VCE = 0.5 V IF = 10 mA 10 IF = 2 mA IF = 1 mA 1 IF = 0.5 mA 8 IF = 10 mA 6 IF = 5 mA 4 IF = 2 mA 2 IF = 1 mA IF = 0.5 mA 0.1 −40 −20 0 20 40 60 80 100 0 120 0.0 0.2 TA − Ambient Temperature (5C) 0.4 0.6 0.8 1.0 VCE − Collector−Emitter Voltage (V) Figure 13. Collector Current vs. Ambient Temperature (FODM124) Figure 14. Collector Current vs. Collector−Emitter Voltage (FODM124) 10000 CTR – Normalized Current Transfer Ratio (%) ICEO − Collector Dark Current (nA) 160 VCE = 40 V 1000 100 10 1 0.1 −40 0 20 40 60 80 100 Normalized to TA = 25°C 120 100 80 60 40 20 −40 120 IF = 1 mA VCE = 0.5 V −20 0 20 40 60 80 100 TA − Ambient Temperature (5C) TA − Ambient Temperature (5C) Figure 15. Collector Dark Current vs. Ambient Temperature (FODM124) Figure 16. Normalized Current Transfer Ratio vs. Ambient Temperature (FODM124) VCC = 5 V IF = 1 mA TA = 25°C 1000 Switching Time (ms) −20 140 tOFF 100 tS 10 tON 1 1 10 100 RL − Load Resistance (kW) Figure 17. Switching Time vs. Load Resistance (FODM124) www.onsemi.com 6 120 FODM121 Series, FODM124, FODM2701, FODM2705 REFLOW PROFILE Max. Ramp−up Rate = 3°C/S 260 240 220 TP Max. Ramp−down Rate = 6°C/S tP TL Tsmax 200 Temperature (5C) 180 tL Preheat Area 160 Tsmin 140 ts 120 100 80 60 40 20 0 120 240 360 Time (s) Time 25°C to Peak Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 s Ramp−up Rate (tL to tP) 3°C/second max. Liquidus Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 s Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 s Ramp−down Rate (TP to TL) 6°C/s max. Time 25°C to Peak Temperature 8 min max. ORDERING INFORMATION Part Number (Note 3) Package Shipping† FODM121 Full Pitch Mini−Flat 4−Pin 100 / Tube FODM121R2 Full Pitch Mini−Flat 4−Pin 2,500 / Tape and Reel FODM121V Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 100 / Tube FODM121R2V Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 2,500 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. The product orderable part number system listed in this table also applies to the FODM121A, FODM121B, FODM121C, FODM124, FODM2701, and FODM2705 products. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MFP4 3.85X4.4, 2.54P CASE 100AP ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13488G MFP4 3.85X4.4, 2.54P DATE 31 AUG 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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