FODM3052V-NF098

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Other names and brands may be claimed as the property of others. Features Description • Compact 4-pin Surface Mount Package (2.4 mm Maximum Standoff Height) • Peak Blocking Voltage – 250V (FODM301X) – 400V (FODM302X) – 600V (FODM305X) • Safety and Regulatory Approvals: – UL1577, 3,750 VACRMS for 1 Minute The FODM301X, FODM302X, and FODM305X series consists of a GaAs infrared emitting diode driving a silicon bilateral switch housed in a compact 4-pin miniflat package. The lead pitch is 2.54 mm. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 V/240 V operations. – DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications • • • • • • • • • Industrial Controls Traffic Lights Vending Machines Solid State Relay Lamp Ballasts Solenoid/Valve Controls Static AC Power Switch Incandescent Lamp Dimmers Motor Control Functional Schematic Package Outlines ANODE 1 MAIN 4 TERMINAL CATHODE 2 MAIN 3 TERMINAL Figure 1. Functional Schematic ©2003 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Figure 2. Package Outlines Publication Order Number: FODM3053-NF098/D FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I–IV I–III < 300 VRMS Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage VPR DTI TS IS,INPUT Parameter 6000 Vpeak External Creepage 5 mm External Clearance 5 mm  0.4 mm Distance Through Insulation (Insulation Thickness) Case Temperature(1) Input Current(1) PS,OUTPUT Output Power(1) RIO Insulation Resistance at TS, VIO = 500 V(1) Note: 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 150 °C 200 mA 300 mW > 109  FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Value Unit TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 °C 260 for 10 sec °C TJ TSOL Lead Solder Temperature EMITTER IF (avg) Continuous Forward Current 60 mA IF (pk) Peak Forward Current (1 μs pulse, 300 pps.) 1 A VR Reverse Input Voltage 3 V PD Power Dissipation (No derating required over operating temp. range) 100 mW On-State RMS Current 70 mA (RMS) DETECTOR IT(RMS) VDRM Off-State Output Terminal Voltage FODM3011, FODM3012 250 FODM3022, FODM3023 400 FODM3052, FODM3053 PD Power Dissipation (No derating required over operating temp. range) www.onsemi.com 3 V 600 300 mW FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Absolute Maximum Ratings TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 10 mA All 1.20 1.50 V IR Reverse Leakage Current VR = 3 V, TA = 25°C All 0.01 100 μA All 2 100 nA FODM3011, FODM3012, FODM3022, FODM3023 10 DETECTOR IDRM dV/dt Peak Blocking Current Either Rated V (2) DRM, IF = 0 Direction Critical Rate of Rise of Off-State Voltage IF = 0 (Figure 8)(3) FODM3052, FODM3053 V/μs 1,000 Notes: 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. See Figure 1 for test circuit Commutating dv/dt is function of the load-driving thyristor(s) only. Transfer Characteristics Symbol IT IH VTM Parameter LED Trigger Current Test Conditions Main Terminal Voltage = 3 V(4) Device Min. Typ. Max. FODM3011, FODM3022, FODM3052 10 FODM3012, FODM3023, FODM3053 5 Unit mA Holding Current, Either Direction All 450 Peak On-State Voltage Either I = 100 mA peak TM Direction All 2.2 µA 3 V Notes: 4. All devices are guaranteed to trigger at an IF value of less than or equal to the max IFT specification. For optimum operation over temperature and lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IFT should not exceed the absolute maximum rating of 60 mA. Example: For FODM0353M, the minimum IF bias should be 5 mA x 150% = 7.5 mA Isolation Characteristics Symbol VISO Parameter Steady State Isolation Voltage Test Conditions 1 Minute, R.H. = 40% to 60% www.onsemi.com 4 Device All Min. 3,750 Typ. Max. Unit VACRMS FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Electrical Characteristics 1.8 1000 IDRM - LEAKAGE CURRENT (nA) VF - FORWARD VOLTAGE (V) VDRM = 600 V 1.7 1.6 1.5 1.4 TA = -40 °C 1.3 25 °C 1.2 100 °C 1.1 10 1. 0.9 1 10 100 10 1 0.1 -40 100 -20 IF - FORWARD CURRENT (mA) IFT (TA) / IFT (TA = 25 °C) 10 NORMALIZED TO TA = 25 °C 1 -20 0 20 40 60 20 40 60 80 100 Fig4.LeakageCurrentvs.AmbientTemperature 80 100 TA - AMBIENT TEMPERATURE (°C) IFT(NORMALIZED) IH(NORMALIZED) IH (TA) / IH (TA = 25 °C) Fig3.LEDForwardVoltagevs.ForwardCurrent 0.1 -40 0 TA - AMBIENT TEMPERATURE (°C) 1.4 VTM = 3 V NORMALIZED TO TA = 25 °C 1.3 1.2 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) Fig 5. Normalized Holding Current vs. Ambient Temperature www.onsemi.com 5 Fig 6. Normalized Trigger Current vs. Ambient Temperature FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Typical Performance Characteristics VDRM(NORMALIZED) = VDRM (TA) / VDRM (TA = 25 °C) TA = 25 °C NORMALIZED TO PWIN >> 100 µs 10 8 6 4 2 0 1 10 100 PWIN - LED TRIGGER PULSE WIDTH (µs) Fig 7. LED Current Required to Trigger vs. LED Pulse Width 1.4 NORMALIZED TO TA = 25 °C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -40 -20 0 TA = 25 °C 200 100 0 -100 -200 -300 -400 -3 -2 -1 40 60 80 100 Fig 8. Normalized Off-State Output Terminal Voltage vs. Ambient Temperature 300 -4 20 TA - AMBIENT TEMPERATURE (°C) 400 ITM - ON-STATE CURRENT (mA) IFT(NORMALIZED) = IFT (P PWIN) / IFT (PWA >> 100 µs) 12 0 1 2 VTM - ON-STATE VOLTAGE (V) Fig 9. On-State Characteristics www.onsemi.com 6 3 4 FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Typical Performance Characteristics (Continued) 600 V (FODM3052) (FODM3053) 400 V (FODM3022) (FODM3023) 250 V (FODM3011) (FODM3012) RTEST Vdc R = 10 kΩ CTEST PULSE INPUT MERCURY WETTED RELAY APPLIED VOLTAGE WAVEFORM X100 SCOPE PROBE D.U.T. 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. 2. 100x scope probes are used, to allow high speeds and voltages. 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable RTEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. τRC is measured at this point and recorded. Vmax = 600 V (FODM3052, FODM3053) = 400 V (FODM3022, FODM3023) = 250 V (FODM3011, FODM3012) 378 V (FODM3052, FODM3053) 252 V (FOMD3022, FODM3023) 158 V (FODM3011, FODM3012) dv/dt = 0 VOLTS 0.63 Vmax τRC τRC NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. 378 = τ (FODM3053) RC (FODM3052) 252 = τ (FODM3023) RC (FODM3022) 158 = τ (FODM3011) RC (FODM3012) Figure 10. Static dv/dt Test Circuit RL Rin 1 VCC 2 4 FODM3011 FODM3012 FODM3022 FODM3023 FODM3052 FODM3053 180 Ω 120 V 60 Hz 3 Figure 11. Resistive Load ZL Rin 1 VCC 2 4 FODM3011 FODM3012 FODM3022 FODM3023 FODM3052 FODM3053 180 Ω 2.4 k Ω 120 V 60 Hz 0.1 μF C1 3 Figure 12. Inductive Load with Sensitive Gate Triac (IGT ≤ 15 mA) www.onsemi.com 7 FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Typical Application Information Rin 1 4 360 Ω 470 Ω HOT VCC 2 FODM3022 FODM3023 FODM3052 FODM3053 0.05 μF 39 Ω 3 240 VAC 0.01 μF LOAD GROUND In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side. The 39 Ω resistor and 0.01μF capacitor are for snubbing of the triac, and the 470 Ω resistor and 0.05 μF capacitor are for snubbing the coupler. These components may or may not be necessary depending upon the particular and load used. Figure 13. Typical Application Circuit www.onsemi.com 8 FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Typical Application Information (Continued) Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. www.onsemi.com 9 FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Reflow Profile Part Number Package Packing Method FODM3011 Full Pitch Mini-Flat 4-Pin Tube (100 units) FODM3011R2 Full Pitch Mini-Flat 4-Pin Tape and Reel (2500 Units) FODM3011V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) FODM3011R2V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) Note: The product orderable part number system listed in this table also applies to the FODM3012, FODM3022, FODM3023, FODM3052, and FODM3053 products. Marking Information 1 3011 V X YY 3 4 R 2 6 5 Figure 14. Top Mark Table 1. Top Mark Definitions 1 ON Semiconductor Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “6” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code www.onsemi.com 10 FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Ordering Information K0 P2 P0 t D0 E A0 W1 W B0 d F D1 P 2.54 Pitch Description Symbol Dimensions Tape Width W 12.00±0.4 Tape Thickness t 0.35±0.02 Sprocket Hole Pitch P0 4.00±0.20 Sprocket Hole Dia. D0 1.55±0.20 Sprocket Hole Location E 1.75±0.20 Pocket Location F 5.50±0.20 P2 2.00±0.20 Pocket Pitch P 8.00±0.20 Pocket Dimension A0 4.75±0.20 Pocket Hole Dia. B0 7.30±0.20 K0 2.30±0.20 D1 1.55±0.20 Cover Tape Width W1 Cover Tape Thickness d Max. Component Rotation or Tilt 9.20 0.065±0.02 20° max Devices Per Reel 2500 Reel Diameter 330 mm (13") www.onsemi.com 11 FODM30XX — 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Tape Specifications ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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