FQA10N80C-F109

N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant D G G D TO-3PN S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter ID Drain Current FQA10N80C-F109 800 -Continuous (TC = 25oC) -Continuous (TC = 100oC) IDM Drain Current VGSS Gate to Source Voltage - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC 10 A 6.32 A 40 A ± 30 V (Note 2) 920 mJ (Note 1) 10 A 24 mJ 4.0 V/ns (Note 1) (Note 3) (TC = 25oC) Unit V 240 W 1.92 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max RθJA Thermal Resistance, Junction to Ambient, Max ©2006 Semiconductor Components Industries, LLC. September-2017,Rev.3 FQA10N80C-F109 Unit 0.52 o C/W 40 o C/W Publication Order Number: FQA10N80C-F109/D FQA10N80C-F109 — N-Channel QFET® MOSFET FQA10N80C-F109 Part Number FQA10N80C-F109 Top Mark FQA10N80C Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 800 -- -- V -- 0.98 -- V/°C VDS = 800 V, VGS = 0 V -- -- 10 μA VDS = 640 V, TC = 125°C -- -- 100 μA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 μA 3.0 -- 5.0 V VGS = 10 V, ID = 5.0 A -- 0.93 1.1 Ω VDS = 50 V, ID = 5.0 A -- 5.8 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2150 2800 pF -- 180 230 pF -- 15 20 pF On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 400 V, ID = 10.0 A, RG = 25 Ω (Note4) VDS = 640 V, ID = 10.0 A, VGS = 10 V (Note 4) -- 50 110 ns -- 130 270 ns -- 90 190 ns -- 80 170 ns -- 45 58 nC -- 13.5 -- nC -- 17 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.0 A ISM -- -- 40.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.0 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 730 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 10.0 A, dIF / dt = 100 A/μs -- 10.9 -- μC Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 17.3 mH, IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 8.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQA10N80C-F109 — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250μs Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 2.5 2.0 VGS = 10V VGS = 20V 1.5 1.0 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test ※ Note : TJ = 25℃ -1 0 5 10 15 25 30 10 0.2 0.4 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 160V VDS = 400V 10 Ciss 2000 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 1.0 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 1500 0.8 VSD, Source-Drain voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.6 ID, Drain Current [A] 3500 Capacitance [pF] 20 VGS, Gate-Source Voltage [V] 0.5 VDS = 640V 8 6 4 2 ※ Note : ID = 10A 0 -1 10 0 0 10 1 10 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 3 FQA10N80C-F109 — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 12 Operation in This Area is Limited by R DS(on) 2 10 μs 10 100 μs 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 6 4 2 0 25 -2 3 10 10 50 100 125 0 D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 0 .5 2 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 -1 0 .1 PDM 0 .0 5 t1 0 .0 2 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response 10 8 10 -3 10 -2 10 -1 t2 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 FQA10N80C-F109 — N-Channel QFET® MOSFET Typical Characteristics FQA10N80C-F109 — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQA10N80C-F109 — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA10N80C-F109 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. 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