FQB5N60CTM-WS

FQB5N60CTM_WS N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Features Description • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested D D G G D2-PAK S S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB5N60CTM_WS 600 Unit V 4.5 A - Continuous (TC = 100°C) 2.6 A 18 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 10 4.5 100 0.8 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter FQB5N60CTM_WS Thermal Resistance, Junction to Case, Max. 1.25 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max. ©2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS Rev. 1.0 1 Unit o C/W 40 www.fairchildsemi.com FQB5N60CTM_WS — N-Channel QFET® MOSFET June 2015 Part Number FQB5N60CTM_WS Top Mark FQB5N60CS Electrical Characteristics Symbol Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 600 -- -- V -- 0.6 -- V/°C VDS = 600 V, VGS = 0 V -- -- 1 μA VDS = 480 V, TC = 125°C -- -- 10 μA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25 A -- 2.0 2.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.25 A -- 4.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 515 670 pF -- 55 72 pF -- 6.5 8.5 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 4.5 A, VGS = 10 V, RG = 25 Ω (Note 4) VDS = 480 V, ID = 4.5 A, VGS = 10 V (Note 4) -- 10 30 ns -- 42 90 ns -- 38 85 ns -- 46 100 ns -- 15 19 nC -- 2.5 -- nC -- 6.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM -- -- 18 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 300 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/μs -- 2.2 -- μC NOTES: 1. Repetitive rating : pulse width limited by maximum junction temperature. 2. L = 18.9 mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS Rev. 1.0 2 www.fairchildsemi.com FQB5N60CTM_WS — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 0 10 1 10 ID, Drain Current [A] 1 10 -1 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -2 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1 10 5 VGS = 10V 4 3 2 VGS = 20V 1 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ 0 -1 0 2 4 6 8 10 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1000 1.2 1.4 12 VGS, Gate-Source Voltage [V] 800 Ciss Capacitance [pF] 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 Coss 400 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 0.8 VSD, Source-Drain voltage [V] VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 4.5A 0 -1 10 0 0 10 1 10 4 8 12 16 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS Rev. 1.0 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB5N60CTM_WS — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 100 150 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 100 μs 1 4 ID, Drain Current [A] 1 ms 10 ms 100 ms 0 DC 10 -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 2 10 3 2 1 0 25 -2 10 3 10 10 50 75 100 125 TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 150 0 D = 0 .5 0 .2 ※ N o te s : 1 . Z θ J C( t ) = 1 . 2 5 ℃ / W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 10 -1 0 .0 5 0 .0 2 0 .0 1 θ JC ZθJCZ(t), (t), Thermal Response [oC/W] Thermal Response VDS, Drain-Source Voltage [V] 10 200 5 10 ID, Drain Current [A] 50 TJ, Junction Temperature [ C] Operation in This Area is Limited by R DS(on) 10 0 o o TJ, Junction Temperature [ C] PDM s in g le p u ls e 10 t1 -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS Rev. 1.0 4 www.fairchildsemi.com FQB5N60CTM_WS — N-Channel QFET® MOSFET Typical Characteristics FQB5N60CTM_WS — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS Rev. 1.0 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FQB5N60CTM_WS — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS Rev. 1.0 6 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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