N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
Features
• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V,
ID = 3.75 A
Description
This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 28 nC)
produced using ON Semiconductor’s proprietary planar
• Low Crss (Typ. 12 pF)
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state • 100% Avalanche Tested
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are • RoHS Compliant
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D
D
G
S
G
G
DS
D2-PAK
I2-PAK
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQB8N60CTM / FQI8N60CTU
600
Unit
V
7.5
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
4.6
A
30
A
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
7.5
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
(Note 1)
14.7
4.5
3.13
mJ
V/ns
W
147
1.18
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
± 30
V
230
mJ
Thermal Characteristics
Symbol
RJC
RJA
FQB8N60CTM /
FQI8N60CTU
Parameter
0.85
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
©2003 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Unit
62.5
oC/W
40
Publication Order Number:
FQI8N60C/D
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
FQB8N60C / FQI8N60C
Part Number
FQB8N60CTM
Top Mark
FQB8N60C
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
FQI8N60CTU
FQI8N60C
I2-PAK
Tube
N/A
N/A
50 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
--
V/°C
VDS = 600 V, VGS = 0 V
1
µA
IDSS
Zero Gate Voltage Drain Current
--
--
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.75 A
--
1.0
1.2
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 3.75 A
--
8.7
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
965
1255
pF
--
105
135
pF
--
12
16
pF
--
16.5
45
ns
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5A,
RG = 25 Ω
(Note 4)
VDS = 480 V, ID = 7.5A,
VGS = 10 V
(Note 4)
--
60.5
130
--
81
170
ns
--
64.5
140
ns
--
28
36
nC
--
4.5
--
nC
--
12
--
nC
7.5
A
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.5 A
Drain-Source Diode Forward Voltage
--
--
30
VSD
--
--
1.4
V
trr
Reverse Recovery Time
--
365
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.5 A,
dIF / dt = 100 A/µs
--
3.4
--
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2.L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.I SD ≤ 7.5 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
www.onsemi.com
2
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
1
10
o
ID, Drain Current [A]
1
10
0
10
150 C
o
25 C
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
10
-1
0
10
2
1
10
o
-55 C
0
10
10
4
8
6
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
1
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
3.0
VGS = 10V
2.5
2.0
1.5
VGS = 20V
1.0
0
10
150℃
※ Note : TJ = 25℃
-1
0.5
0
5
10
15
20
10
0.2
0.4
ID, Drain Current [A]
2000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1800
0.6
Coss
800
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
600
Crss
400
1.4
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 8A
200
0
-1
10
1.2
12
VGS, Gate-Source Voltage [V]
Ciss
1200
1000
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
10
1600
1400
0.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Capacitance [pF]
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
0
0
10
1
10
0
5
Figure 5. Capacitance Characteristics
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
www.onsemi.com
3
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
!
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
0.9
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4 A
0.5
0.0
-100
200
-50
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
8
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1
10
6
1 ms
10 ms
100 ms
ID, Drain Current [A]
ID, Drain Current [A]
0
TJ, Junction Temperature [ C]
o
DC
0
10
4
-1
10
2
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
ZθJC(t), Thermal Response [oC/W]
100
125
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
0
D = 0 .5
0 .2
10
-1
0 .1
0 .0 5
※ N o te s :
1 . Z θ J C ( t) = 0 . 8 5 ℃ /W M a x .
2 . D u t y F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 2
0 .0 1
10
PDM
s in g le p u ls e
-2
t1
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.onsemi.com
4
10
1
150
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
Typical Characteristics
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
200nF
12V
VGS
Same Type
as DUT
50KΩ
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
Time
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
DUT
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 17. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
❖
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com