N-Channel QFET® MOSFET
60 V, 11 A, 115 mΩ
Features
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,
ID = 5.5 A
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirements Allowing
Direct Operation form Logic Drivers
D 2, 4
4
4
1
I-PAK
2
1
2
3 D-PAK
Absolute Maximum Ratings T
Symbol
VDSS
ID
1G
3
S 3
o
C
= 25 C unless otherwise noted.
FQD13N06LTM / FQU13N06LTU
FQU13N06LTU-WS
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
Unit
60
V
11
A
7
A
44
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
11
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
2.8
7.0
2.5
mJ
V/ns
W
28
0.22
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case5for Seconds
± 20
V
90
mJ
Thermal Characteristics
Symbol
RJC
RJA
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU-WS
Parameter
Thermal Resistance, Junction to Case, Max.
2.5
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
©2000 Semiconductor Components Industries, LLC.
October-2017,Rev.2
Unit
oC/W
50
Publication Order Number:
FQU13N06L/D
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
FQD13N06L / FQU13N06L
Part Number
FQD13N06LTM
Package
D-PAK
Top Mark
FQD13N06L
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FQU13N06LTU
FQU13N06L
I-PAK
Tube
N/A
N/A
70 units
FQU13N06LTU-WS
FQU13N06LS
I-PAK
Tube
N/A
N/A
75 units
Electrical Characteristics T
Symbol
o
C
= 25 C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.05
--
V/°C
VDS = 60 V, VGS = 0 V
--
--
1
µA
VDS = 48 V, TC = 150°C
--
--
10
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
RDS(on)
VGS(th)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.5 A
VGS = 5 V, ID = 5.5 A
---
0.092
0.115
0.115
0.145
Ω
gFS
Forward Transconductance
VDS = 25 V, ID = 5.5 A
--
6
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
270
350
pF
--
95
125
pF
--
17
23
pF
--
8
25
ns
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 6.8 A,
RG = 25 Ω
(Note 4)
VDS = 48 V, ID = 13.6 A,
VGS = 5 V
(Note 4)
--
90
190
--
20
50
ns
--
40
90
ns
--
4.8
6.4
nC
--
1.6
--
nC
--
2.7
--
nC
11
A
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 11 A
Drain-Source Diode Forward Voltage
--
--
44
VSD
--
--
1.5
V
trr
Reverse Recovery Time
--
45
--
ns
Qrr
Reverse Recovery Charge
--
45
--
nC
VGS = 0 V, IS = 13.6 A,
dIF / dt = 100 A/µs
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
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2
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
ID, Drain Current [A]
10
1
10
ID, Drain Current [A]
1
0
10
150℃
25℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 25V
2. 250μ s Pulse Test
-55℃
-1
-1
0
10
10
1
10
10
0
2
4
8
6
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
200
IDR, Reverse Drain Current [A]
R DS(ON) [mΩ ],
Drain-Source On-Resistance
300
VGS = 5V
VGS = 10V
※ Note : TJ = 25℃
0
0
10
100
0
10
20
40
30
150℃
-1
10
ID, Drain Current [A]
0.2
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
400
Crss
10
0
1.2
1.4
1.6
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 13.6A
0
10
1.0
12
V GS , Gate-Source Voltage [V]
Capacitance [pF]
Coss
0
-1
10
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
200
0.6
0.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
0
1
10
2
4
6
8
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
!
1.2
2.5
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.5
1.0
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
0.5
150
※ Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
10
1
Operation in This Area
is Limited by R DS(on)
10
ID , Drain Current [A]
100 µ s
1 ms
10 ms
DC
10
0
※ Notes :
8
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
-1
10
10
-1
0
1
10
2
10
10
50
75
100
125
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
ZJC(t), Thermal Response [oC/W]
ID , Drain Current [A]
12
2
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N otes :
1 . Z θ J C( t ) = 4 . 5 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
10
10
PDM
0 .0 2
0 .0 1
-1
-5
t1
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
t2
10
0
t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
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4
10
1
150
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
!
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
Time
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
DUT
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
Mechanical Dimensions
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7
FQU13N06LTU
Figure 17. TO251 (I-PAK), Molded, 3-Lead
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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8
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
Mechanical Dimensions
FQU13N06LTU_WS
Figure 18. TO-251 (I-PAK), Molded, 3-Lead, Option AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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9
FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET
Mechanical Dimensions
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