FQD17P06TM

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQD17P06 / FQU17P06 P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -12 A, -60 V, RDS(on) = 135 mΩ (Max.) @ VGS = -10 V, ID = -6 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested S D G G S I-PAK D-PAK G D S D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD17P06 / FQU17P06 -60 Unit V -12 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) -7.6 A -48 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) -12 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 4.4 -7.0 2.5 mJ V/ns W 44 0.35 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. FQD17P06 / FQU17P06 2.85 Unit RθJA RθJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 °C/W Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 1 www.fairchildsemi.com FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET April 2014 Part Number FQD17P06TM Top Mark FQD17P06 Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU17P06TU FQU17P06 IPAK Tube N/A N/A 70 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Off Characteristics Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current Min. Typ. Max. Unit -60 -- -- V -- -0.06 -- V/°C VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -6.0 A -- 0.11 0.135 Ω gFS Forward Transconductance VDS = -30 V, ID = -6.0 A -- 8.7 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 690 900 pF -- 325 420 pF -- 80 105 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -8.5 A, RG = 25 Ω (Note 4) VDS = -48 V, ID = -17 A, VGS = -10 V (Note 4) -- 13 35 ns -- 100 210 ns -- 22 55 ns -- 60 130 ns -- 21 27 nC -- 4.2 -- nC -- 10 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -12 A ISM -- -- -48 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -12 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time -- 92 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -17 A, dIF / dt = 100 A/µs -- 0.32 -- µC NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 2.4 mH, IAS = -12 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -17 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 2 www.fairchildsemi.com FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET Package Marking and Ordering Information FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET Typical Performance Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 1 10 1 -ID , Drain Current [A] -ID, Drain Current [A] Top : 0 10 ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 10 150∩ 0 10 25∩ ∝ Notes : 1. VDS = -30V 2. 250レs Pulse Test -55∩ -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.36 -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 0.40 0.32 0.28 VGS = - 10V 0.24 0.20 VGS = - 20V 0.16 0.12 0.08 ∝ Note : TJ = 25∩ 0.04 0.00 0 10 150∩ 25∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test -1 0 10 20 30 40 50 10 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 1400 -VGS, Gate-Source Voltage [V] 1600 Capacitance [pF] 1 10 Coss 1200 ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 1000 800 600 Crss 400 200 0 -1 10 0 10 1 10 VDS = -30V 8 VDS = -48V 6 4 2 ∝ Note : ID = -17 A 0 0 4 8 12 16 20 24 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 10 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = -250 レA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∝ Notes : 1. VGS = -10 V 2. ID = -6.0 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 12 Operation in This Area is Limited by R DS(on) 2 10 100 µs -ID, Drain Current [A] -ID, Drain Current [A] 10 1 ms 1 10 10 ms DC 0 10 ∝ Notes : o 1. TC = 25 C 8 6 4 2 o 2. TJ = 150 C 3. Single Pulse 0 25 -1 10 0 1 10 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [∩ ] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ∝ N o te s : 1 . Z ヨ J C ( t) = 2 .8 5 ∩ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ヨ J C( t ) 0 .2 0 .1 0 .0 5 10 0 .0 2 0 .0 1 -1 PDM s in g le p u ls e 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 4 www.fairchildsemi.com FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET Typical Performance Characteristics FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT Qg 300nF 300nF VDS VGS Qgs Qgd DUT DU T IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS Tim Ti me VDD VDD VDS (t) (t)) ID (t DUT DUT IAS BVDSS tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 5 www.fairchildsemi.com FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod se W idth Gate Pul uls D = -------------------------Gate te Pu Ga Pullse Per Period 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 6 www.fairchildsemi.com FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 7 www.fairchildsemi.com FQD17P06 / FQU17P06 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO251 (I-PAK), Molded, 3-Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003 ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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