Is Now Part of
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FQD8P10 / FQU8P10
P-Channel QFET® MOSFET
-100 V, -6.6 A, 530 mΩ
Description
Features
• -6.6 A, -100 V, RDS(on) = 530 mΩ (Max) @ VGS = -10 V,
ID = -3.3 A
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
S
D
G
G
S
I-PAK
D-PAK
G
D
S
D
Absolute Maximum Ratings T
Symbol
VDSS
ID
o
C
= 25 C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD8P10TM / FQU8P10TU
-100
Unit
V
-6.6
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
-4.2
A
-26.4
A
VGSS
Gate-Source Voltage
30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
150
mJ
IAR
Avalanche Current
(Note 1)
-6.6
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
4.4
-6.0
2.5
mJ
V/ns
W
44
0.35
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
RJA
FQD8P10TM
FQU8P10TU
Parameter
2.84
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
Unit
1
110
oC/W
50
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
November 2013
Part Number
FQD8P10TM
Top Mark
FQD8P10
Package
D-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FQU8P10TU
FQU8P10
I-PAK
Tube
N/A
N/A
70 units
Electrical Characteristics T
Symbol
o
C
= 25 C unless otherwise noted.
Parameter
Off Characteristics
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
BVDSS
/
TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to 25°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Min
Typ
Max
Unit
-100
--
--
V
--
-0.1
--
V/°C
VDS = -100 V, VGS = 0 V
--
--
-1
A
VDS = -80 V, TC = 125°C
--
--
-10
A
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 A
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -3.3 A
--
0.41
0.53
gFS
Forward Transconductance
VDS = -40 V, ID = -3.3 A
--
4.1
--
S
Ciss
Input Capacitance
360
470
pF
Output Capacitance
--
120
155
pF
Crss
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
Coss
Reverse Transfer Capacitance
--
30
40
pF
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
On Characteristics
Dynamic Characteristics
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -8.0 A,
RG = 25
(Note 4)
VDS = -80 V, ID = -8.0 A,
VGS = -10 V
(Note 4)
--
11
30
ns
--
110
230
ns
--
20
50
ns
--
35
80
ns
--
12
15
nC
--
3.0
--
nC
--
6.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-6.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -6.6 A
Drain-Source Diode Forward Voltage
--
--
-26.4
A
--
--
-4.0
V
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -8.0 A,
dIF / dt = 100 A/s
--
98
--
ns
--
0.35
--
C
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 5.2 mH, IAS = -6.6 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ -8.0 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
2
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
Top :
-ID, Drain Current [A]
0
10
1
10
-ID , Drain Current [A]
1
10
-1
10
150℃
0
10
25℃
-55℃
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-2
10
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
-IDR , Reverse Drain Current [A]
RDS(on) [],
Drain-Source On-Resistance
1.5
VGS = - 10V
1.2
0.9
VGS = - 20V
0.6
0.3
※ Note : TJ = 25℃
5
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
15
20
10
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
900
800
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
700
Capacitance [pF]
0
10
-1
0
-VGS, Gate-Source Voltage [V]
0.0
1
10
Ciss
600
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
500
400
Crss
300
200
100
0
-1
10
0
10
1
VDS = -80V
8
6
4
2
※ Note : ID = -8.0 A
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
VDS = -50V
0
10
VDS = -20V
10
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
!
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -3.3 A
0.5
0.0
-100
200
-50
o
50
100
150
200
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
7
2
10
Operation in This Area
is Limited by R DS(on)
6
100 s
1
10
-ID, Drain Current [A]
-ID, Drain Current [A]
0
o
TJ, Junction Temperature [ C]
1 ms
10 ms
DC
0
10
※ Notes :
5
4
3
2
o
1. TC = 25 C
1
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
ZJC(t), Thermal Response [oC/W]
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
※ N o te s :
1 . Z θ J C ( t) = 2 .8 4 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
10
10
PDM
0 .0 2
0 .0 1
-1
-5
t1
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
4
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
!
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
200nF
200nF
12V
VGS
Same
Same T
Ty
ype
as DUT
DUT
50KΩ
50K
Ω
Qg
300nF
300nF
VDS
VGS
Qgs
Qgd
DUT
DUT
IG = const.
Charg
Ch
arge
e
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
t on
td(on
d( on))
VDD
VGS
VGS
t of
offf
tr
td(of
d( offf)
tf
10
10%
%
DUT
VGS
VDS
90%
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDS
DSS
S
1
-----------------------------EAS = ---- L IAS2 ------2
BVDS
DSS
S - VDD
L
tp
ID
RG
VGS
Tim
Ti
me
VDD
VDD
VDS (t)
(t))
ID (t
DUT
DUT
IAS
BVDSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
5
www.fairchildsemi.com
VDS
DUT
_
I SD
L
Driver
Driv
er
RG
VGS
VGS
( Driv
Driver
er )
I SD
( DUT )
Compliment of DUT
Comp
(N-C
(N-Channel
hannel))
VDD
• dv/dt cont
ntrrolled by RG
• ISD con
onttrol
ollled by pu
pullse pe
perriod
se W idth
Gate Pul
uls
D = -------------------------Gate
te Pu
Ga
Pullse Per
Period
10
10V
V
Body
Bo
dy Diod
ode
e Reverse Curren
entt
IRM
di//dt
di
IFM , Bo
Body
dy Diod
ode
e For
orw
ward Curren
entt
VDS
( DUT )
VSD
Body
Bo
dy Diode
For
Forw
ward Vol
olttag
age
e Drop
Drop
VDD
Body
Bo
dy Di
Diod
ode
e Recov
cove
ery dv
dv/d
/dtt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
6
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
+
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
7
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
Mechanical Dimensions
Figure 17. TO251 (I-PAK), Molded, 3-Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
9
www.fairchildsemi.com
FQD8P10 / FQU8P10 — P-Channel QFET® MOSFET
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intended to be an exhaustive list of all such trademarks.
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®
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™
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