FQP10N20C

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This advanced • Low Crss (Typ. 40.5 pF) MOSFET technology has been especially tailored to reduce • 100% Avalanche Tested on-state resistance, and to provide superior switching produced using Fairchild Semiconductor’s proprietary performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G D S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter FQP10N20C ID Drain Current IDM Drain Current VGSS Gate to Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) Unit V A 9.5 9.5 * 6.0 6.0 * A 38 38 * A 5.5 (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FQPF10N20C 200 - Derate above 25oC V/ns 72 38 W 0.57 0.3 W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics FQP10N20C FQPF10N20C Unit RθJC Symbol Thermal Resistance, Junction to Case, Max Parameter 1.74 3.33 °C/W RθJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 1 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET November 2013 Device Marking FQP10N20C Device FQP10N20C Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units FQPF10N20C FQPF10N20C TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.28 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 10 μA VDS = 160 V, TC = 125°C -- -- 100 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.75 A -- 0.29 0.36 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.75 A -- 5.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 395 510 pF -- 97 125 pF -- 40.5 53 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4) VDS = 160 V, ID = 9.5 A, VGS = 10 V (Note 4) -- 11 30 ns -- 92 190 ns -- 70 150 ns -- 72 160 ns -- 20 26 nC -- 3.1 -- nC -- 10.5 -- nC 9.5 A A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.5 A Drain-Source Diode Forward Voltage -- -- 38 VSD -- -- 1.5 V trr Reverse Recovery Time -- 158 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/μs -- 0.97 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 3.5 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 2 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.5 VGS = 10V VGS = 20V 0.5 ※ Note : TJ = 25℃ 0.0 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 5 10 15 20 25 10 30 0.2 0.4 ID, Drain Current [A] 1200 Ciss Coss 600 Crss 400 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 200 0 -1 10 1.0 1.2 1.4 1.6 12 VGS, Gate-Source Voltage [V] 800 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitances [pF] 25℃ VDS = 40V 10 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 9.5A 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 0 4 8 12 16 20 24 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.75 A 0.5 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 2 10 Operation in This Area is Limited by R DS(on) 2 10 ID, Drain Current [A] ID, Drain Current [A] 100 μs 1 10 1 ms 10 ms DC 0 10 ※ Notes : -1 10 100 μs 1 ms 1 10 10 ms 100 ms DC 0 10 ※ Notes : o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 10 200 o o -1 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for FQPF10N20C Figure 9-1. Maximum Safe Operating Area for FQP10N20C 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 4 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Typical Characteristics o ZθJC Zθ (t), (t),Thermal ThermalResponse Response [ C/W] JC 10 0 (Continued) D = 0 .5 ※ N o te s : 1 . Z θ J C( t ) = 1 . 7 4 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 10 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Typical Characteristics 0 .0 5 -1 0 .0 2 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C( t) = 3 .3 3 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 θ JC ZθJCZ(t), (t), Thermal Response [oC/W] Thermal Response Figure 11-1. Transient Thermal Response Curve for FQP10N20C s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF10N20C ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 5 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 VDS (t) VDD DUT tp 6 Time www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 7 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 8 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2003 Fairchild Semiconductor Corporation FQP10N20C / FQPF10N20C Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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