FQP11N40C

FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ Features Description • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 28 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 85 pF) MOSFET technology has been especially tailored to reduce • 100% Avalanche Tested on-state resistance, and to provide superior switching produced using Fairchild Semiconductor’s proprietary performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GD S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter FQP11N40C ID Drain Current IDM Drain Current VGSS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) FQPF11N40C Unit V 10.5 10.5 * A 6.6 6.6 * A 42 42 * A 400 -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) ± 30 V 360 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 4.5 (Note 3) (TC = 25oC) - Derate above 25oC V/ns 135 44 W 1.07 0.35 W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max RθJA Thermal Resistance, Junction to Ambient, Max ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 1 Unit FQP11N40C 0.93 FQPF11N40C 2.86 °C/W 62.5 62.5 °C/W www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET November 2013 Device Marking FQP11N40C Device FQP11N40C Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units FQPF11N40C FQPF11N40C TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.54 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 μA VDS = 320 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V --- --- 10 100 μA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A -- 0.43 0.53 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.25 A -- 7.1 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 840 1090 pF -- 250 325 pF -- 85 110 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 10.5 A, RG = 25 Ω (Note 4) VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4) -- 14 40 ns -- 89 190 ns -- 81 170 ns -- 81 170 ns -- 28 35 nC -- 4 -- nC -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A -- 42 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.5 A Drain-Source Diode Forward Voltage --- -- 1.4 V trr Reverse Recovery Time 290 -- ns Reverse Recovery Charge VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/μs -- Qrr -- 2.4 -- μC IS ISM Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 2 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 150°C ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 Notes : 1. 250μs Pulse Test 2. TC = 25°C -55°C 25°C 0 10 Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 -1 10 0 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2.0 1.5 1.0 VGS = 20V 0.5 Note : TJ = 25°C 1 10 0 10 150°C Notes : 1. VGS = 0V 25°C 2. 250μs Pulse Test -1 0 5 10 15 20 25 30 35 10 40 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics 2000 1.2 1.4 12 Crss = Cgd Ciss 1200 Coss 1000 800 600 VDS = 100V 10 VGS, Gate-Source Voltage [V] 1400 Capacitance [pF] 1.0 Coss = Cds + Cgd 1600 Notes ; 1. VGS = 0 V Crss 2. f = 1 MHz 400 200 0 -1 10 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) 1800 0.6 VSD, Source-Drain voltage [V] VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 10.5A 0 0 10 1 10 ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250μA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 5.25 A 150 0.0 -100 200 Figure 9-1. Maximum Safe Operating Area of FQP11N40C 0 50 100 10 μs ID, Drain Current [A] ID, Drain Current [A] 10 μs 100 μs 1 ms 1 200 Operation in This Area is Limited by R DS(on) 2 10 10 150 Figure 9-2. Maximum Safe Operating Area of FQPF11N40C Operation in This Area is Limited by R DS(on) 2 10 -50 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] 10 ms 100 ms DC 0 10 Notes : 1. TC = 25°C 100 μs 1 1 ms 10 10 ms 100 ms DC 0 10 Notes : 1. TC = 25°C 2. TJ = 150°C 2. TJ = 15°C 3. Single Pulse 3. Single Pulse -1 -1 10 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10.Maximum Drain Current 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [°C] ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 4 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve of FQP11N40C 0 D = 0 .5 0 .2 10 N o te s : 1 . Z θ J C ( t) = 0 . 9 3 ° C / W M a x . 0 .1 -1 2 . D u ty F a c to r , D = t1 /t2 0 .0 5 3 . T JM - T C = P D M * Z θJC (t) 0 .0 2 PDM 0 .0 1 θJC ZθJC Response [oC/W] Z (t),(t),Thermal Thermal Response 10 s in g le p u ls e 10 t1 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ZθJC Thermal Response [oC/W] Zθ(t), (t), Thermal Response JC Figure 11-2. Transient Thermal Response Curve of FQPF11N40C 10 D = 0 .5 0 0 .2 ※ N o te s : 1 . Z θ J C( t ) = 2 . 8 6 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 10 t1 s in g le p u ls e -2 10 PDM -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 5 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 VDS (t) VDD DUT tp 6 Time www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 7 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 8 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 10 www.fairchildsemi.com FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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