Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQP15P12 / FQPF15P12
P-Channel QFET® MOSFET
-120 V, -15 A, 0.2 Ω
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
• -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A
• Low Gate Charge (Typ. 29 nC)
• Low Crss (Typ. 110 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
S
G
G
D
S
G
D
S
TO-220
TO-220F
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP15P12
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
- Pulsed
FQPF15P12
-120
(Note 1)
Unit
V
-15
-15 *
A
-10.6
-10.6 *
A
-60
-60 *
A
± 30
V
mJ
EAS
Single Pulsed Avalanche Energy
(Note 2)
1157
IAR
Avalanche Current
(Note 1)
-15
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
10
-5.0
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
100
0.67
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
41
0.27
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
FQPF15P12
3.66
Unit
°C/W
40
--
°C/W
62.5
62.5
°C/W
FQP15P12
1.5
1
www.fairchildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
August 2014
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
-120
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.13
VDS = -120 V, VGS = 0 V
--
--
-1
µA
VDS = -96 V, TC = 150°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -7.5 A
--
0.17
0.2
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -7.5 A
--
9.5
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
850
1100
pF
--
310
400
pF
--
110
140
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -60 V, ID = -15 A,
RG = 25 Ω
(Note 4)
VDS = -96 V, ID = -15 A,
VGS = -10 V
(Note 4)
--
15
40
ns
--
100
210
ns
--
80
170
ns
--
80
170
ns
--
29
38
nC
--
5.1
--
nC
--
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-15
A
ISM
--
--
-60
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -15 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -15 A,
dIF / dt = 100 A/µs
--
126
--
ns
--
0.61
--
µC
Notes:
1. Repetitive rating : pulse width limited by maximum junction temperature.
2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ -15A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
2
www.fairchildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
Electrical Characteristics
2
2
10
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
Top :
1
10
1
-I D, Drain Current [A]
-ID, Drain Current [A]
10
0
10
10
o
175 C
o
25 C
0
10
o
-55 C
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
-VGS, Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.9
0.7
-I DR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.8
VGS = -10V
0.6
0.5
0.4
VGS = -20V
0.3
0.2
0.1
0.0
※ Note : TJ = 25℃
1
10
175℃ 25℃
0
10
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
20
40
10
60
0.0
0.5
1.0
-ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2.0
2.5
3.0
3.5
4.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
2200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
2000
1800
VDS = -30V
10
1400
-V GS , Gate-Source Voltage [V]
Ciss
1600
Capacitance [pF]
1.5
-VSD, Source-Drain voltage [V]
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1200
1000
Crss
800
600
400
200
0
-1
10
0
10
1
10
VDS = -96V
8
6
4
2
※ Note : ID = -15A
0
0
10
20
30
40
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
VDS = -60V
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -7.5 A
0.5
0.0
-100
200
o
TJ, Junction Temperature [ C]
50
100
150
200
o
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
2
0
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
-50
Operation in This Area
is Limited by R DS(on)
2
10
-I D, Drain Current [A]
-I D, Drain Current [A]
100 µs
1 ms
10 ms
1
10
DC
0
10
※ Notes :
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
o
o
1. TC = 25 C
1. TC = 25 C
o
o
2. TJ = 175 C
3. Single Pulse
2. TJ = 175 C
3. Single Pulse
-1
10
-1
0
1
10
10
2
10
10
-VDS, Drain-Source Voltage [V]
0
10
1
10
2
10
-VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP15P12
Figure 9-2. Maximum Safe Operating Area
for FQPF15P12
20
-I D, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
4
www.fairchildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C( t) = 1 .5 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .1
10
0 .0 5
-1
0 .0 2
0 .0 1
θ JC
( t) , T h e r m a l R e s p o n s e
10
PDM
t1
Z
s in g le p u ls e
10
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
Typical Characteristics
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C(t) = 3 .6 6 ℃ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z θ J C(t)
0 .1
0 .0 5
10
0 .0 2
0 .0 1
-1
JC
Zθ (t) , T h e rm a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve for FQP15P12
PDM
s in g le p u ls e
10
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
5
www.fairchildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
200nF
200nF
12V
VGS
Same
Same T
Ty
ype
as DUT
DUT
50KΩ
50K
Ω
Qg
-10V
300nF
300nF
VDS
VGS
Qgs
Qgd
DUT
DUT
VGS
Charg
Ch
arge
e
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
t on
td(
d(on
on))
VDD
VGS
VGS
t of
offf
tr
td(
d(of
offf )
tf
10
10%
%
DUT
DUT
VGS
VDS
90%
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDS
DSS
S
1
--------------------------------EAS = ---- L IAS2 --2
BVDS
DSS
S - VDD
L
tp
ID
RG
VDD
VDD
VGS
Tim
Ti
me
VDS (t)
(t))
ID (t
DUT
DUT
IAS
BVDSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
6
www.fairchildsemi.com
VDS
DUT
_
I SD
L
Driver
Driv
er
RG
VGS
VGS
( Driver
Driver )
Compliment of DUT
Comp
(N-C
(N-Channel
hannel))
VDD
• dv/dt cont
ntrrolled b
byy RG
• ISD controlled by pu
pullse pe
perriod
Gate Pu
Pulse W idth
D = -------------------------Gate
Ga
te Pu
Pullse Pe
Perriod
10
10V
V
Body
Bo
dy D
Diiod
ode
eR
Re
everse C
Cu
urrent
I SD
( DUT )
IRM
di//dt
di
IFM , Bo
Body
dy D
Diiod
ode
eF
Fo
orward Cu
Current
VDS
( DUT )
VSD
Body
Bo
dy D
Diiode
For
Forw
ward Vo
Voltag
age
e Drop
Drop
VDD
Body
Bo
dy Diod
Diode
e Recov
cove
ery dv
dv/d
/dtt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C2
7
www.fairchildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET
+
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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