FQP19N20C

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This advanced • Low Crss (Typ. 85 pF) MOSFET technology has been especially tailored to reduce • 100% Avalanche Tested on-state resistance, and to provide superior switching produced using Fairchild Semiconductor’s proprietary performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GD S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter ID Drain Current IDM Drain Current VGSS Gate to Source Voltage FQP19N20C FQPF19N20C Unit V 200 -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) 19.0 19.0 * A 12.1 12.1 * A 76.0 76.0 * A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 433 IAR Avalanche Current (Note 1) 19.0 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 5.5 (Note 3) (TC = 25oC) - Derate above 25oC V/ns 139 43 W 1.11 0.34 W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP19N20C FQPF19N20C Unit RθJC Thermal Resistance, Junction to Case, Max 0.9 2.89 °C/W RθJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 1 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET November 2013 Device Marking FQP19N20C Device FQP19N20C Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units FQPF19N20C FQPF19N20C TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.24 -- V/°C VDS = 200 V, VGS = 0 V -- -- 10 μA VDS = 160 V, TC = 125°C IDSS Zero Gate Voltage Drain Current -- -- 100 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9.5 A -- 0.14 0.17 Ω gFS Forward Transconductance VDS = 40 V, ID = 9.5 A -- 10.8 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF -- 195 255 pF -- 85 110 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 19.0 A, RG = 25 Ω (Note 4) VDS = 160 V, ID = 19.0 A, VGS = 10 V (Note 4) -- 15 40 ns -- 150 310 ns -- 135 280 ns -- 115 240 ns -- 40.5 53.0 nC -- 6.0 -- nC -- 22.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 19.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 19.0 A Drain-Source Diode Forward Voltage -- -- 76.0 A VSD -- -- 1.5 V trr Reverse Recovery Time -- 208 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 19.0 A, dIF / dt = 100 A/μs -- 1.63 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 1.8 mH, IAS = 19.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 19.0 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 2 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 0.8 0.6 VGS = 10V 0.4 VGS = 20V 0.2 ※ Note : TJ = 25℃ 0.0 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 10 20 30 40 50 10 60 0.0 0.4 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 VGS, Gate-Source Voltage [V] Ciss Coss Crss 1000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 500 0 -1 10 1.6 2.0 2.4 12 2000 1500 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitance [pF] 25℃ VDS = 40V 10 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 19.0A 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 9.5 A 0.5 0.0 -100 200 -50 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 2 10 10 100 μs 1 ms 1 10 10 ms DC 0 10 ※ Notes : 10 μs 100 μs 1 10 1 ms 10 ms DC 0 10 ※ Notes : o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -1 10 200 Operation in This Area is Limited by R DS(on) 2 ID, Drain Current [A] ID, Drain Current [A] 0 o o -1 0 1 10 10 2 10 10 0 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP19N20C Figure 9-2. Maximum Safe Operating Area for FQPF19N20C 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 4 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Typical Characteristics o ZθJCZ(t), Thermal Response (t), Thermal Response[ C/W] θJC 10 FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Typical Characteristics (Continued) 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 0 . 9 0 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C ( t) = 2 .8 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e θJC o ZθJC Thermal Z (t),(t), ThermalResponse Response[ C/W] Figure 11-1. Transient Thermal Response Curve for FQP19N20C 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF19N20C ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 5 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 VDS (t) VDD DUT tp 6 Time www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 7 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 8 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2004 Fairchild Semiconductor Corporation FQP19N20C / FQPF19N20C Rev. C1 10 www.fairchildsemi.com FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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