P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 mΩ
Features
Description
• - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
S
G
G
D
TO-220
S
●
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
●
●
▶ ▲
- Pulsed
(Note 1)
D
FQP27P06
-60
Unit
V
-27
A
-19.1
A
-108
A
VGSS
Gate-Source Voltage
25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
560
mJ
IAR
Avalanche Current
(Note 1)
-27
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
12
-7.0
120
0.8
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQP27P06
1.25
Unit
°C/W
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RCS
Thermal Resistance, Case-to-Sink, Typ.
0.5
°C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
°C/W
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQP27P06/D
FQP27P06 P-Channel QFET® MOSFET
FQP27P06
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
BVDSS
/
TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to 25°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Min
Typ
Max
Unit
-60
--
--
V
--
-0.06
--
V/°C
VDS = -60 V, VGS = 0 V
--
--
-1
A
VDS = -48 V, TC = 150°C
--
--
-10
A
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 A
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -13.5 A
--
0.055
0.07
gFS
Forward Transconductance
VDS = -30 V, ID = -13.5 A
--
12.4
--
S
Ciss
Input Capacitance
1100
1400
pF
Output Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
Coss
--
510
660
pF
Crss
Reverse Transfer Capacitance
--
120
155
pF
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
On Characteristics
Dynamic Characteristics
Switching Characteristics
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25
(Note 4)
VDS = -48 V, ID = -27 A,
VGS = -10 V
(Note 4)
--
18
45
ns
--
185
380
ns
--
30
70
ns
--
90
190
ns
--
33
43
nC
--
6.8
--
nC
--
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-27
A
ISM
--
--
-108
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -27 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
www.onsemi.com
2
--
105
--
ns
--
0.41
--
C
FQP27P06 P-Channel QFET® MOSFET
Elerical Characteristics
2
2
10
10
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
1
10
-ID , Drain Current [A]
-ID, Drain Current [A]
Top :
0
1
10
175℃
25℃
0
10
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
10
-1
-1
0
10
10
1
10
2
10
4
Figure 1. On-Region Characteristics
2
0.20
-IDR , Reverse Drain Current [A]
RDS(on) [],
Drain-Source On-Resistance
10
10
0.16
VGS = - 10V
0.12
VGS = - 20V
0.08
0.04
※ Note : TJ = 25℃
1
10
0
10
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
10
20
30
40
50
60
70
80
10
90 100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3000
12
-VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
Coss
Capacitance [pF]
8
Figure 2. Transfer Characteristics
0.24
0.00
6
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
2000
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1500
1000
Crss
500
0
-1
10
0
10
10
VDS = -30V
8
6
4
2
※ Note : ID = -27 A
0
1
10
VDS = -48V
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
3
FQP27P06 P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -13.5 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
Operation in This Area
is Limited by R DS(on)
25
2
-ID, Drain Current [A]
100 s
1 ms
10 ms
1
DC
10
0
10
※ Notes :
o
1. TC = 25 C
20
15
10
5
o
2. TJ = 175 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
10
50
Figure 9. Maximum Safe Operating Area
10
75
100
125
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C ( t ) = 1 .2 5 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
0 .0 1
10
t1
s in g le p u ls e
t2
-2
10
-5
10
-4
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
-ID, Drain Current [A]
10
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
www.onsemi.com
4
10
1
175
FQP27P06 P-Channel QFET® MOSFET
Typical Characteristics
FQP27P06 P-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
td(on)
VDD
VGS
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
VDD
VDS (t)
ID (t)
DUT
-10V
IAS
BVDSS
tp
www.onsemi.com
5
Time
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
www.onsemi.com
6
VDD
FQP27P06 P-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
TO-220
www.onsemi.com
7
FQP27P06 P-Channel QFET® MOSFET
Package Dimensions
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
❖
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com