FQP6N60C

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ® FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • • • • • • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ G! G DS TO-220 TO-220F GD S FQP Series ▲ ● ● FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQP6N60C - Continuous (TC = 100°C) IDM Drain Current - Pulsed FQPF6N60C Units V 5.5 5.5 * A 3.3 3.3 * A 22 22 * A 600 (Note 1) ± 30 V 300 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 12.5 4.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 125 1.0 40 0.31 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2004 Fairchild Semiconductor Corporation FQP6N60C 1.0 FQPF6N60C 3.2 Units °C/W Rev. A, March 2004 FQP6N60C/FQPF6N60C QFET Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.75 A -- 1.7 2.0 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.75 A -- 4.8 -- S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 620 810 pF -- 65 85 pF -- 7 10 pF -- 15 40 ns -- 45 100 ns -- 45 100 ns -- 45 100 ns -- 16 20 nC -- 3.5 -- nC -- 6.5 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 5.5A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 5.5A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM -- -- 22 A -- -- 1.4 V -- 310 -- ns -- 2.1 -- µC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.5 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18.2mH, IAS = 5.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP6N60C/FQPF6N60C Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V (Continued) Top : 0 10 1 10 ID, Drain Current [A] 1 10 ID, Drain Current [A] FQP6N60C/FQPF6N60C Typical CharacteristicsTypical Characteristics -1 10 o 150 C o -55 C 0 o 10 25 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -2 -1 10 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 1 5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 6 VGS = 10V 4 3 VGS = 20V 2 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 0 -1 0 2 4 6 8 10 12 14 10 0.2 0.4 0.6 0.8 ID, Drain Current [A] Capacitances [pF] Ciss 600 Coss 400 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 1.4 1.6 1.8 2.0 12 VDS = 120V 10 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1000 1.0 VSD, Source-Drain voltage [V] VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 5.5A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 0 0 4 8 12 16 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, March 2004 (Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 0.8 -100 150 2.0 1.5 1.0 0.0 -100 200 Operation in This Area is Limited by R DS(on) 100 150 Operation in This Area is Limited by R DS(on) 200 10 µs 100 µs 1 10 1 ms 10 ms 100 ms DC ID, Drain Current [A] ID, Drain Current [A] 50 Figure 8. On-Resistance Variation vs Temperature 100 µs 1 10 -1 10 0 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 0 -50 o TJ, Junction Temperature [ C] 10 ※ Notes : 1. VGS = 10 V 2. ID = 2.5 A 0.5 o 1 ms 10 ms DC 0 10 -1 10 ※ Notes : o 1. TC = 25 C ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 10 FQP6N60C/FQPF6N60C Typical Characteristics -2 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP6N60C Figure 9-2. Maximum Safe Operating Area for FQPF6N60C ID, Drain Current [A] 5 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 10 FQP6N60C/FQPF6N60C Typical Characteristics (Continued) 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C (t) = 1 .0 0 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for FQP6N60C Zθ JC(t), Thermal Response D = 0 .5 10 0 0 .2 0 .1 ※ N o te s : 1 . Z θ J C (t) = 3 .2 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z θ J C (t) 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF6N60C ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP6N60C/FQPF6N60C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2004 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, March 2004 FQP6N60C/FQPF6N60C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP6N60C/FQPF6N60C Mechanical Dimensions TO - 220 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP6N60C/FQPF6N60C Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ i-Lo™ Across the board. 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