FQP8P10

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP8P10 P-Channel QFET® MOSFET -100 V, -8 A, 530 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -8 A, -100 V, RDS(on)=530 mΩ(Max.) @VGS=-10 V, ID=-4 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D G G DS TO-220 S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) FQP8P10 -100 Unit V -8.0 A -5.7 A -32 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ IAR Avalanche Current (Note 1) -8.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 6.5 -6.0 65 0.43 -55 to +175 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Typ -- RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 Max 2.31 Unit °C/W Symbol RθJC www.fairchildsemi.com FQP8P10 P-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 150°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.0 A -- 0.41 0.53 Ω gFS Forward Transconductance VDS = -40 V, ID = -4.0 A -- 4.3 -- S -- 360 470 pF -- 120 155 pF -- 30 40 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -8.0 A, VGS = -10 V (Note 4, 5) -- 11 30 -- 110 230 ns -- 20 50 ns -- 35 80 ns -- 12 15 nC -- 3.0 -- nC -- 6.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -8.0 A ISM -- -- -32 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -8.0 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -8.0 A, dIF / dt = 100 A/µs (Note 4) -- 98 -- ns -- 0.35 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.5mH, IAS = -8.0A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 www.fairchildsemi.com FQP8P10 P-Channel MOSFET Electrical Characteristics FQP8P10 P-Channel MOSFET Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top : -ID, Drain Current [A] 10 0 10 1 10 -I D , Drain Current [A] 1 -1 10 175℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -2 10 10 -1 0 10 2 1 10 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = - 10V 1.2 0.9 1 10 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 1.5 VGS = - 20V 0.6 0.3 ※ Note : TJ = 25℃ 0.0 0 10 175℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 5 10 15 20 25 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 900 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Coss 600 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 500 400 Crss 300 200 100 0 -1 10 VDS = -20V 10 VDS = -50V Ciss -V GS , Gate-Source Voltage [V] 700 Capacitance [pF] 25℃ VDS = -80V 8 6 4 2 ※ Note : ID = -8.0 A 0 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 0 2 4 6 8 10 12 14 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQP8P10 P-Channel MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.0 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 2 10 Operation in This Area is Limited by R DS(on) 8 1 ms 1 -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 10 10 ms DC 0 10 ※ Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 3 1 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] PDM t1 Z θ s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 www.fairchildsemi.com FQP8P10 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 VDD Time VDS (t) ID (t) IAS BVDSS www.fairchildsemi.com FQP8P10 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 www.fairchildsemi.com FQP8P10 P-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 www.fairchildsemi.com FQP8P10 P-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Sync-Lock™ 2Cool™ ® F-PFS™ AccuPower™ ®* ® ® ® FRFET PowerTrench AX-CAP * SM BitSiC™ Global Power Resource PowerXS™ TinyBoost™ Green Bridge™ Build it Now™ Programmable Active Droop™ TinyBuck™ Green FPS™ CorePLUS™ QFET® TinyCalc™ Green FPS™ e-Series™ QS™ CorePOWER™ TinyLogic® CROSSVOLT™ Gmax™ Quiet Series™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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