FQPF12N60C

FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 21 pF) • 100% Avalanche Tested D G G D S TO-220F S Absolute Maximum Ratings T Symbol o C = 25 C unless otherwise noted. Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR (Note 1) FQPF12N60C / FQPF12N60CT Unit 600 V 12* 7.4* A A 48* A ± 30 V Single Pulsed Avalanche Energy (Note 2) 870 mJ Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 51 0.41 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics FQPF12N60C / FQPF12N60CT Unit RθJC Symbol Thermal Resistance, Junction-to-Case, Max. Parameter 2.43 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 1 www.fairchildsemi.com FQPF12N60C — N-Channel QFET® MOSFET November 2013 Part Number FQPF12N60C Top Mark FQPF12N60C Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FQPF12N60CT FQPF12N60CT TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min Typ Max Unit 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA, TJ = 25°C ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125° --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω gFS Forward Transconductance VDS = 40 V, ID = 6 A -- 13 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1760 2290 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 182 235 pF -- 21 28 pF -- 30 70 ns -- 85 180 ns -- 140 280 ns -- 90 190 ns -- 48 63 nC -- 8.5 -- nC -- 21 -- nC 12 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 12 A RG = 25 Ω (Note 4) VDS = 400 V, ID = 12 A VGS = 10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12 A -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 12 A dIF/dt = 100 A/µs -- 4.9 -- µC NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 11 mH, IAS = 12 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3.ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 2 www.fairchildsemi.com FQPF12N60C — N-Channel QFET® MOSFET Package Marking and Ordering Information FQPF12N60C — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 0 1 10 10 2 4 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage VGS = 10V 1.0 VGS = 20V 0.5 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3500 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 1500 1000 1.4 VDS = 120V Ciss 2000 1.2 12 10 2500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 VSD, Source-Drain voltage [V] ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 VDS = 300V VDS = 480V 8 6 4 2 ※ Note : ID = 12A 0 -1 10 0 0 10 1 10 ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 14 Operation in This Area is Limited by R DS(on) 2 12 10 µs 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 100 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 8 6 4 2 0 25 -2 10 10 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 D = 0 .5 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 2 .4 3 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 10 0 .0 5 -1 0 .0 2 PDM 0 .0 1 θJC (t), Thermal Response [oC/W] Figure 11. Transient Thermal Response Curve Z t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 4 www.fairchildsemi.com FQPF12N60C — N-Channel QFET® MOSFET Typical Performance Characteristics FQPF12N60C — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp tp Ti Tim me Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 5 www.fairchildsemi.com FQPF12N60C — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Same Type Same as DUT VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------Gate Ga te Pu Pullse Pe Perriod 10V 10 V IFM , Body Body Di Diod ode e Forward Curr rren entt di/d di /dtt IRM Body Bo dy Diod ode e Reverse Curren entt VDS ( DUT ) Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt VSD VDD Body Diode Body For Forw ward Vol olttag age e Dr Drop op Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 6 www.fairchildsemi.com FQPF12N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FQPF12N60C Rev C0 8 www.fairchildsemi.com FQPF12N60C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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