FQPF27P06

MOSFET – P-Channel, QFET) -60 V, -17 A, 70 mW FQPF27P06 Description This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. www.onsemi.com VDSS RDS(ON) MAX ID MAX −60 V 70 mW @ 10 V −17 A S Features • • • • • −17 A, −60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −8.5 A Low Gate Charge (Typ. 33 nC) Low Crss (Typ. 120 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating G D P−Channel MOSFET G D S TO−220F TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT MARKING DIAGRAM $Y&Z&3&K FQPF 27P06 $Y &Z &3 &K FQPF27P06 = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Plant Code = 2−Digits Lot Run Traceability Code = Specific Device Code ORDERING INFORMATION Device FQPF27P06 © Semiconductor Components Industries, LLC, 2001 June, 2021 − Rev. 3 1 Package Shipping TO−220−3 (Pb−Free) 1000 Units / Tube Publication Order Number: FQPF27P06/D FQPF27P06 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Symbol VDSS ID Parameter FQPF27P06 Unit −60 V − Continuous (TC = 25°C) −17 A − Continuous (TC = 100°C) −12 A − Pulsed −68 A Drain−Source Voltage Drain Current IDM Drain Current (Note 1) VGSS Gate−Source Voltage + 25 V EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ IAR Avalanche Current (Note 1) −17 A EAR Repetitive Avalanche Energy (Note 1) 4.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) −7.0 V/ns 47 W 0.31 W/°C −55 to +175 °C 300 °C PD Power Dissipation (TC = 25°C) − Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.25 mH, IAS = −17 A, VDD = −25 V, RG = 25 W, Starting TJ = 25°C 3. ISD ≤ −27 A, di/dt ≤ 300A/ms, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Characteristic Typ Max Unit RqJC Thermal Resistance, Junction−to−Case − 3.19 °C/W RqJA Thermal Resistance, Junction−to−Ambient − 62.5 °C/W www.onsemi.com 2 FQPF27P06 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit −60 −− − V OFF CHARACTERISTICS BVDSS DBVDSS / DTJ IDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C − −0.06 − V/°C Zero Gate Voltage Drain Current VDS = −60 V, VGS = 0 V − − −1 mA VDS = −48 V, TC = 150°C − − −10 mA IGSSF Gate−Body Leakage Current, Forward VGS = −25 V, VDS = 0 V − − −100 nA IGSSR Gate−Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V − − 100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −2.0 − −4.0 V RDS(on) Static Drain−Source On−Resistance VGS = −10 V, ID = −8.5 A − 0.055 0.07 W Forward Transconductance VDS = −30 V, ID = −8.5 A (Note 4) − 12 − S VDS = −25 V, VGS = 0 V, f = 1.0 MHz − 1100 1400 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 510 660 pF Crss Reverse Transfer Capacitance − 120 155 pF − 18 45 ns − 185 380 ns − 30 70 ns − 90 190 ns − 33 43 nC − 6.8 − nC − 18 − nC Maximum Continuous Drain−Source Diode Forward Current − − −17 A ISM Maximum Pulsed Drain−Source Diode Forward Current − − −68 A VSD SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time tr Turn−On Rise Time td(off) Turn−Off Delay Time tf Turn−Off Fall Time Qg Total Gate Charge Qgs Gate−Source Charge Qgd Gate−Drain Charge VDD = −30 V, ID = −13.5 A, RG = 25 W (Note 4, 5) VDS = −48 V, ID = −27 A, VGS = −10 V (Note 4, 5) DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING IS Drain−Source Diode Forward Voltage VGS = 0 V, IS = −17 A − − −4.0 V trr Reverse Recovery Time − 105 − ns Qrr Reverse Recovery Charge VGS = 0 V, IS = −27 A, dIF / dt = 100 A/ms (Note 4) − 0.41 − mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse width ≤ 300 ms, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.onsemi.com 3 FQPF27P06 TYPICAL CHARACTERISTICS VGS − 15.0 V − 10.0 V − 8.0 V − 7.0 V − 6.0 V − 5.5 V − 5.0 V Bottom: − 4.5 V 101 −ID, Drain Current (A) −ID, Drain Current (A) Top: * Notes: 1. 250 ms Pulse Test 2. TC = 25°C 100 10−1 100 101 175°C 10−1 101 25°C 100 −55°C * Notes: 1. VDS = −30 V 2. 250 ms Pulse Test 0 10 −VDS, Drain−Source Voltage (V) 40 Figure 2. Transfer Characteristics 0.24 −IDR, Reverse Drain Current (A) RDS(on), Drain−Source On−Resistance (W) 30 −VGS, Gate−Source Voltage (V) Figure 1. On−Region Characteristics 0.20 0.16 VGS = −10 V 0.12 VGS = −20 V 0.08 0.04 0.00 * Note: TJ = 25°C 2000 Coss * Notes: 1. VGS = 0 V 2. f = 1 MHz 1500 1000 Crss 500 0 10−1 100 * Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 25°C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature −VGS, Gate−Source Voltage (V) 2500 175°C 100 −VSD, Source−Drain Voltage (V) −ID, Drain Current (A) 3000 101 10−1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Capacitance (pF) 20 10 8 VDS = −48 V 6 4 2 0 101 VDS = −30 V VDS, Drain−Source Voltage (V) * Note: ID = −27 A 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 35 FQPF27P06 TYPICAL CHARACTERISTICS (Continued) 2.5 RDS(ON), (normalized) Drain−Source On−Resistance (W) −BVDSS, (Normalized) Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −100 * Notes: 1. VGS = 0 V 2. ID = 250 mA −50 0 50 100 150 2.0 1.5 1.0 0.0 −100 200 * Notes: 1. VGS = −10 V 2. ID = −13.5 A 0.5 −50 0 50 100 150 200 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 18 Operation in This Area is Limited by RDS(on) −ID, Drain Current (A) 15 1 ms 10 ms 101 100 ms DC 100 0 100 * Notes : 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 12 9 6 3 101 0 25 102 −VDS, Drain−Source Voltage (V) 50 75 100 125 TC, Case Temperature (°C) Figure 9. Maximum Safe Operating Area 100 0.2 * Notes: 1. ZqJC (t) = 3.19°C/W Max. 2. Duty Factor, D = t1 / t2 3. TJM − TC = PDM x ZqJC (t) 0.1 0.05 10−1 0.02 PDM 0.01 t1 single pulse 10−2 10−5 10−4 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0.5 ZqJC (t), Thermal Response −ID, Drain Current (A) 102 10−3 10−2 10−1 t1, Square Wave Pulse Duration (s) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 t2 100 101 175 FQPF27P06 VGS Same Type as DUT 200 nF 50 k W 12 V Qg −10 V 300 nF Qgs VDS VGS Qgd DUT −3 mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on) VDD VGS VGS t off td(off) tr tf 10% DUT −10 V VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms E AS + L VDS BV DSS 1 2 LI 2 AS BV DSS * V DD tp Time ID RG VDD DUT −10 V VDD V DS (t) ID (t) I AS tp BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FQPF27P06 + VDS DUT _ ISD L Driver RG Compliment of DUT (N−Channel) VGS VGS (Driver) ISD VDD • dv/dt controlled by RG • ISD controlled by pulse period D+ Gate Pulse Width Gate Pulse Period 10 V Body Diode Reverse Current I RM (DUT) di/dt IFM , Body Diode Forward Current VDS VSD (DUT) Body Diode Forward Voltage Drop VDD Body Diode Recoverydv/dt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms QFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B DATE 19 JAN 2021 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 3−LEAD / TO−220F−3SG PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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