FQT1N80TF-WS

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel QFET® MOSFET 800V, 0.2 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 0.2 A, 800 V, RDS(on)=15.5 Ω(7\S.)@VGS=10 V, ID=0.1 A • Low Gate Charge (Typ. 5.5 nC) • Low Crss (Typ. 2.7 pF) • 100% Avalanche Tested • RoHS Compliant D D S G G SOT-223 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current FQT1N80TF-WS 800 Unit V ±30 V -Continuous (TC = 25oC) 0.2 -Continuous (TC = 100oC) 0.12 - Pulsed A IDM Drain Current (Note 1) 0.8 A EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) 0.2 A EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns (TC = 25oC) 2.1 W - Derate above 25oC 0.02 W/oC -55 to +150 oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL o 300 C Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction to Ambient* Min. Max. - 60 Unit o C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2013 ON Semiconductor Components Industries, LLC August-2017.Rev3 Pronduct Order Number: FQT1N80TF-WS /D FQT1N80TF-WS N-Channel MOSFET FQT1N80TF-WS Device Marking FQT1N80 Device FQT1N80TF-WS Package SOT-223 Reel Size 330mm Tape Width 12mm Quantity 4000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 800 - - V - 0.8 - V/oC Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC IDSS Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V - - 25 VDS = 640V, TC = 125oC - - 250 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 15.5 20 Ω - 0.75 - S - 150 195 pF - 20 30 pF - 2.7 5.0 pF - 5.5 7.2 nC - 1.1 - nC - 3.3 - nC - 10 30 ns - 25 60 ns - 15 40 ns - 25 60 ns ID = 250µA, Referenced to 25oC µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 0.1A gFS Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 640V, ID = 1A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 400V, ID = 1A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 0.2A - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 1A dIF/dt = 100A/µs - 0.6 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 170mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 1A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 (Note 4) FQT1N80TF-WS N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FQT1N80TF-WS N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID, Drain Current [A] Top : -1 10 0 10 o 150 C o 25 C o -55 C ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -2 10 ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 50 40 VGS = 10V 30 VGS = 20V 20 10 ※ Note : TJ = 25℃ 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 2.0 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics Ciss 150 Coss 100 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] Capacitance [pF] 1.0 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 50 0.8 Figure 6. Gate Charge Characteristics 250 200 0.6 VSD, Source-Drain voltage [V] VDS = 160V 10 VDS = 400V VDS = 640V 8 6 4 2 ※ Note : ID = 1.0 A 0 -1 10 0 10 0 1 0 10 1 2 3 4 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 5 6 FQT1N80TF-WS N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.1 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 0.20 Operation in This Area is Limited by R DS(on) 0.18 0 0.16 ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms 1s -1 10 DC -2 ※ Notes : 10 0.14 0.12 0.10 0.08 0.06 o 1. TC = 25 C 0.04 o 2. TJ = 150 C 3. Single Pulse 0.02 -3 10 0 10 1 2 10 0.00 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 TC, Case Temperature [°C] Figure 11. Transient Thermal Response Curve 10 2 D = 0 .5 Zθ JC(t), Thermal Response ID, Drain Current [A] 10 10 ※ N o te s : 1 . Z θ J C( t) = 6 0 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .2 1 0 .1 0 .0 5 PDM 0 .0 2 10 t1 0 0 .0 1 t2 s in g le p u ls e 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] www.onsemi.com 4 10 2 10 3 125 150 Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 FQT1N80TF-WS N-Channel MOSFET Gate Charge Test Circuit & Waveform FQT1N80TF-WS N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQT1N80TF-WS N-Channel MOSFET Mechanical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 0.70 ±0.10 (0.95) www.onsemi.com 7 0° +0.10 0.25 –0.05 1 0°~ 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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