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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FSA850
Audio 3-Pole / 4-Pole MIC-GND Switch
Description
Features
Switch Type
VCC
THD (MIC)
ESD
IEC 61000-4-2 (Air Gap)
IEC 61000-4-2 (Contact)
HBM (All Pins)
GNDnA/GNDnB to GND
Power to GND
CDM
Operating Temperature
RON Maximum (GND1n)
RON Maximum (SENSE)
3-Pole/4-Pole MIC - GND
2.3 to 4.5 V
0.001% Typical
15 kV
8 kV
3 kV
8 kV
10 kV
2 kV
-40°C to 85°C
0.08 Ω
1Ω
The FSA850 is a 3-pole or 4-pole audio jack microphone
GND switch for accessories with General-Purpose Input /
Output (GPIO) control signals. The FSA850 also has the
ability to perform 4-pole cross-point switching to support
Open Mobile Terminal Platform (OMTP) 4-pole headset
plugs. The architecture is designed to replace discrete
MOSFET solutions and allow common third-party
headphones to be used for listening to music or playing
video from mobile handsets, personal media players, and
portable peripheral devices.
Supports 4-Pole OMTP Cross Point Switching for GND
Connection
Integrates a MIC switch for 3- or 4-Pole Configuration
Headset Plugs
Reduces “Pop and Click” Caused by Microphone Bias
Applications
3.5 mm and 2.5 mm Audio Jacks
Cellular Phones, Smart Phones
MP3 and PMP (Portable Media Player)
Ordering Information
Part Number
Operating
Temperature
Range
Top Mark
FSA850UCX
-40 to +85°C
M5
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
Package
Packing Method
12-Ball, Wafer-Level Chip-Scale Package 3000 units on Tape & Reel
(WLCSP), 3x4 Array, 0.4mm Pitch,
250 µm Ball
www.fairchildsemi.com
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
June 2016
FSA850
SENSE
VCC
Charge
Pump,
Oscillator &
POR
01
00/10
MIC/GND2A
MIC
11
Audio
CODEC
MIC Bias
10/11
RMIC
MIC/GND2B
MIC +
MIC L SPKR
To Audio Plug
Detection
Block
00
CMIC
MIC/GND1A
S0
10/11
Switch &
Charge
Pump
Control
Logic
R SPKR
S1
MIC/GND1B
00/10
Baseband
Processor
GPIO
3-Pole
4-Pole
GND
GPIO1
GPIO2
Figure 1. Typical Mobile Application
Analog Symbol
01
VCC
Charge
Pump,
Oscillator,
POR
00/10
SENSE
MIC/GND2A
MIC
11
10/11
MIC/GND2B
00
MIC/GND1A
S0
S1
00/10
10/11
Switch &
Charge
Pump
Control
Logic
MIC/GND1B
GND
Figure 2. Analog Symbol
Table 1. Functional Truth Table
S0
S1
GND
SENSE
MIC
0
0
MIC/GND1A
MIC/GND2A
MIC/GND2B
0
1
HIGH-Z
HIGH-Z
HIGH-Z
1
0
MIC/GND1A & MIC/GND1B
MIC/GND2A & MIC/GND2B
HIGH-Z
1
1
MIC/GND1B
MIC/GND2B
MIC/GND2A
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
www.fairchildsemi.com
2
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
Typical Application
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
Pin Assignments
Vcc
S1
MIC
GND
A
SENSE
B
S0
MIC/GND2B
GND
MIC/GND2A
C
MIC/GND1B
GND
MIC/GND1A
D
1
2
3
Figure 3. Pin Assignments (Top Through View, Top Mark Side)
Pin Descriptions
Name
Ball #
MIC
A2
Switch Microphone, connects to microphone pre-amplifier
SENSE
A3
Switch Sense pin to detect GND offset
S0, S1
B3, B1
MIC/GND1A
D3
Switch GND switch, connects to pole 3 of audio jack
MIC/GND2A
C3
Switch GND switch, connects to pole 3 of audio jack
MIC/GND1B
D1
Switch GND switch, connects to pole 4 of audio jack
MIC/GND2B
C1
Switch GND switch, connects to pole 4 of audio jack
A1
Power Supply voltage
VCC
GND
Type
Input
Description
MIC, SENSE, and MIC/GNDn switch-select pin
B2,C2,D2 Ground Ground for both the audio jack and PCB
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
www.fairchildsemi.com
3
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operable
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition,
extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
VCC
VCNTRL
VSWM, VSWG
Parameter
Min.
Max.
Unit
Supply Voltage from Battery
-0.5
+5.5
V
Control Input Voltage (S0, S1)
-0.5
VCC
V
Switch I/O Voltage
(SENSE, MIC, MIC/GND1A, MIC/GND2A, MIC/GND1B, MIC/GND2B)
-0.5
VCC+0.5
V
(1)
IIK
Input Clamp Diode Current
ISW
Switch I/O Current (Continuous)
ID
TSTG
-50
(1)
(SENSE, MIC, MIC/GND2A, MIC/GND2B)
GND Switch I/O Current (Continuous)
(1)
(MIC/GND1A, MIC/GND1B)
Storage Temperature Range
-65
mA
50
mA
300
mA
+150
C
TJ
Maximum Junction Temperature
+150
C
TL
Lead Temperature (Soldering, 10 Seconds)
+260
C
IEC 61000-4-2 System
ESD
ESD
Human Body Model,
JEDEC JESD22-A114
Charged Device Model,
JEDEC JESD22-C101
Air Gap
15
Contact
8
All Other Pins (S0,S1, SENSE, MIC)
3
I/O to GND
(MIC/GND1A, MIC/GND2A, MIC/GND1B,
MIC/GND2B)
8
Power to GND
10
All Pins
2
kV
Note:
1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating
conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend
exceeding them or designing to Absolute Maximum Ratings.
Symbol
Min.
Max.
Unit
2.3
4.5
V
Control Input Voltage (S0, S1)
0
VCC
V
VSWM
Switch I/O Voltage (MIC)
0
VCC
V
VSWG
Switch I/O Voltage (SENSE, MIC/GND1A, MIC/GND2A, MIC/GND1B, MIC/GND2B)
VCC
VCNTRL
TA
Parameter
Battery Supply Voltage
Operating Temperature
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
0
1.0
V
-40
+85
ºC
www.fairchildsemi.com
4
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
Absolute Maximum Ratings
All typical values are at TA = 25°C and VCC = 3.3V unless otherwise specified.
Symbol
VIK
Parameter
Clamp Diode Voltage
Condition
IIN=-18 mA
VCC (V)
TA=- 40ºC to +85ºC
Min.
2.8
VIH
Input Voltage High
VCNTRL=0 to VCC
VIL
Input Voltage Low
VCNTRL=0 to VCC
2.3 to
4.5
IIN
Control Input Leakage (S0,S1)
VCNTRL=0 to VCC
4.5
-1
IOZ
Off Leakage Current of Ports –
Sense, MIC, MIC/GNDnA, and
MIC/GNDnB
S[0:1]=01; SENSE=MIC=0.3 V;
VCC-0.3 V; MIC/GNDnA or
MIC/GNDnB=1V0.3V or Floating
2.3 to
4.5
-1.00
IAON
On Leakage Current of Ports –
Sense, MIC, MIC/GNDnA, and
MIC/GNDnB
S[0:1]=00, 10, 11;
SENSE=MIC=0.3V;
VCC-0.3V; MIC/GNDnA or
MIC/GNDnB=1V0.3V or Floating
2.3 to
4.5
-1.00
ICC
Quiescent Supply Current
VSWG=0 or 1V; VSWM=0 or VCC;
IOUT=0
ICCZ
Quiescent Supply Current – Hi-Z
ICCT
RON_SEN
RON_MIC
RONFLAT_MIC
VMIC
1.0
Unit
V
V
0.5
V
1
µA
0.05
1.00
µA
0.05
1.00
µA
4.5
15
20
µA
S[0:1]=01; VSWG=0 or 1 V;
VSWM=0 or VCC, IOUT=0
4.5
0.2
1.0
µA
Increase in ICC Current Per Control
Voltage and VCC
S0, S1=1.65 V
4.5
3
µA
Switch On Resistance for SENSE
Switch Paths
ION=-24 mA, S[0:1]=00 or 11
MIC/GND2A or
MIC/GND2B=1.0 V
2.3
0.6
1.0
Ω
2.3
0.05
0.20
Ω
I =-24 mA, S[0:1]=00 or 11
On Resistance Flatness for SENSE ON
MIC/GND2A or MIC/GND2B=0 to
Switch Paths
1.0 V
Switch On Resistance for MIC
Switch Paths
ION=-24 mA, S[0:1]=00 or 11
MIC/GND2A or
MIC/GND2B=1.0V
2.3
0.6
1.0
Ω
On Resistance Flatness for MIC
Switch Path
ION=-24 mA, S[0:1]=00 or 11
MIC/GND2A or MIC/GND2B=0.5
to VCC
2.3
.08
0.5
Ω
VCC
V
80
mΩ
1
V
2.3 to
4.5
MIC Input Signal Range
RDSON(GND) GND Switch On Resistance
VSENSE
Max.
-1.2
2.3 to
4.5
RONFLAT_SEN
Typ.
ION=-200 mA, S[0:1]=00 or 11
MIC/GND1A or MIC/GND1B
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
2.3
2.3 to
4.5
SENSE Input Signal Range
0
40
0
www.fairchildsemi.com
5
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
DC Electrical Characteristics
All typical values are at TA = 25°C and VCC = 3.3V unless otherwise specified.
Symbol
Parameter
Condition
VCC (V)
TA=- 40ºC to +85ºC
Min.
Typ.
Max.
Unit
tON_MIC
Turn-On Time (MIC, SENSE) S0, S1 to Output
RL=10 kΩ, CL=10 pF
2.3 to 4.5
1
µs
tOFF_MIC
Turn-Off Time (MIC, SENSE) S0,S1 to Output
RL=10 kΩ, CL=10 pF
2.3 to 4.5
1
µs
tENABLE
Enable Time (MIC, SENSE) S0,S1 to Output
S[0:1]=01 to 00,10,11,
RL=10 kΩ, CL=10 pF
2.3 to 4.5
1
µs
tDISABLE
Turn-Off Time (MIC, SENSE) S0,S1 to Output
S[0:1]=00,10,11 to 01,
RL=10 kΩ, CL=10 pF
2.3 to 4.5
1
µs
MIC and SENSE Switch
Symbol
Parameter
Condition
VCC (V)
TA = -40 to +85°C
Min.
Typ.
Max.
Unit
THD
Total Harmonic Distortion - MIC
RT=600 Ω, VSW=0.5 VPP,
f=20 Hz to 20 kHz,
VIN=1.8 V
2.8
0.001
%
OIRRM
Off Isolation – MIC/SENSE
f=20 kHz, RS=600 Ω,
CL=0 pF, RT=600 Ω
VSW=0.2 VPP
2.8
- 88
dB
XTALKM
Crosstalk from MIC to SENSE
f=1 MHz, RL=100 Ω
2.8
-80
dB
f=2kHz, RL=32 Ω,
CL=0 pF, VIN=100 mVRMS
2.8
-54
dB
X-TalkSystem X-Talk Between Left and Right Speakers
Capacitance
Symbol
CIN
CONM
COFFM
Parameter
Control Pin Input Capacitance (S0, S1)
On Capacitance
Off Capacitance
SENSE
MIC
SENSE
MIC
TA=- 40ºC to +85ºC
Condition
Min.
VCC=0 V, f=1 MHz
Typ. Max.
Unit
1.7
65
VCC=2.8 V, EN=VCC, f=1 MHz,
75
pF
25
VCC=2.8 V, EN=0 V, f=1 MHz,
30
Power
Symbol
PSRR
IL
Parameter
Power Supply Rejection Ratio
Insertion Loss through Switch
(VOUT/VIN)
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
Conditions
VCC (V)
Power Supply Noise at 300 mVPP,
Measured 10/90%,
f=217 Hz
2.8
SENSE/MIC: VIN=400 mVpk-pk,
f=20 kHz, DC Bias=0.3 V,
RL=600 Ω
2.8
SENSE/MIC: VIN=400 mVpk-pk,
f=20 kHz, DC Bias=2.5 V,
RL=600 Ω
2.8
TA = -40 to +85°C
Min.
Typ.
-80
Max.
Unit
dB
-0.4
dB
-0.4
www.fairchildsemi.com
6
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
AC Electrical Characteristics
Product Specific Dimensions
D
E
X
Y
1.56 mm
1.16 mm
0.18 mm
0.18 mm
© 2011 Fairchild Semiconductor Corporation
FSA850 • Rev. 1.12
www.fairchildsemi.com
7
FSA850 — Audio 3-Pole / 4-Pole MIC-GND Switch
The following information applies to the WL-CSP package dimensions on the next page:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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