FUSB3307D6MX

FUSB3307D6MX

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    SOIC-14

  • 描述:

    Usb Type-C Pd Controller, -40 To 85Degc Rohs Compliant: Yes

  • 数据手册
  • 价格&库存
FUSB3307D6MX 数据手册
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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USB Power Delivery 3.0 Adaptive Source Charging Controller FUSB3307 FUSB3307 is a highly integrated USB Power Delivery (PD) power source controller that can control a DC−DC port power regulator or the opto−coupler in the secondary side of an AC−DC adapter. It implements the Source finite state machines of USB Power Delivery 3.0 (PD 3.0) and Type−C™ which includes Programmable Power Supplies (PPS). In order to meet the PPS specification, FUSB3307 supports minimum 3.3 V and maximum 21 V output voltage control. It includes Constant Voltage (CV) and Constant Current Limit (CL) control blocks. The references are supported from internal D/A converters. FUSB3307 supports various protections, Under Voltage Protection (UVP), Over Voltage Protection(OVP), Over Current Protection (OCP), CC1 and CC2 Over Voltage Protection (CC_OVP), VCONN Over Current Protection (VCONN_OCP), and internal and external Over Temperature protection (I_OTP and E_OTP). With a 10−bit A/D converter, output voltage, output current, IC internal temperature and external temperature via an NTC resistor can be monitored. FUSB3307 is capable of controlling a single or back−to−back N−Channel MOSFETs as a load switch, which results in a lower cost and easier design. Features • • • • • • • • • PD 3.0 v2.0 and Type−C 2.0 Compliant Constant Voltage (CV) and Constant Current Limit (CL) Regulation Small Current Sensing Resistor (5 mW) for High Efficiency Gate Driver for N−Channel MOSFET as a Load Switch CC1/CC2 Pin Protection up to 26 V Selectable Resistor Divider or Battery Charging (BC1.2) Modes Built−in Output Capacitor Discharging Resistance Adaptive UVP, Adaptive OVP, I_OTP, E_OTP, CC_OVP and VCONN_OCP Fault Detection 14−pin SOIC and 20−pin QFN Packages Available www.onsemi.com 14 1 SOIC−14 NB CASE 751A−03 QFNW20 4x4, 0.5P CASE 484AT (In Development) GENERIC MARKING DIAGRAMS 14 FUSB3307D6MX AWLYWW 1 3307 D6x ALYWG G FUSB3307D6MX = Specific Device Code A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN DESCRIPTION See detailed pin description information on page 5 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Applications • Wall Chargers for Tablet PC’s and Laptop Batteries • AC−DC PD 3.0 Compliant Adapters • DC−DC Car Chargers for Individual Port Power Control This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2018 July, 2020 − Rev. 0 1 Publication Order Number: FUSB3307/D PWM Controller (e.g. NCP1345, NCP12601) R11 Figure 1. Offline Application Diagram www.onsemi.com 2 C10 R10 R8 R9 26V C9 Sync. Rec. Ctrl (e.g. NCP430x) C8 C7 C4 R4 R7 C6 VCC C5 R5 R6 VFB IFB CATH IS− IS+ VCC FUSB3307 CV/CC Regulation PD 3.0 Device Policy Manager, Policy Engine, Protocol & PHY Layers USB Type−C Detection and Gate Drivers GATE Q1  FDMC012N03 VDD CC1 C3 R2 C1 ESD 7272 VBUS 2 ESDM3551’s R3 ESD 7272 C2 R1 D−/PDIV0 D+/PDIV1 CC2 DISC ESD 7272 FUSB3307 APPLICATION DIAGRAM SZ1SMB30 CAT3G VBAT SZMM3Z1 8VT1G NVMFS5A140PLZ VCC599 V1 3 SDA SCL CLIND ADDR AGND GND EN VSW1 VSW1 VSW2 VSW2 PDRV PGND1 PGND2 CSP1 CSN1 CSP2 CSN2 FB CS1 CS2 COMP CSP1 CSN1 CSP2 CSN2 Figure 2. Automotive Application Diagram www.onsemi.com R13 R12 C4 R4 R5 R9 R8 NVTFS4C10N LSG2 HSG2 C7 CSP2 CSN2 NVTFS4C10N HSG1 LSG1 HSG2 LSG2 VSW2 BST2 HSG1 LSG1 HSG2 LSG2 2x NSVR 0240 V2 VCC599 BST1 VSW1 NCV81599 VCCD VDRV VCC NVTFS4C10N LSG1 HSG1 NVTFS4C10N CSP1 CSN1 R7 C6 C8 C5 26V R6 R14 VDD3307 CV/CC Regulation NTC GND VDD FUSB3307 VFB PDIV2 GATE VCC DISC USB Type− C Detection CC2 D−/ and Gate PDIV0 Drivers D+/ PDIV1 IS+ PD 3.0 CC1 Device IS− Policy Manager, Policy CATH Engine, Protocol & PHY IFB Layers Q1 NVTFS002N04CL C3 VDD3307 C2 GND 5V NIV1241 VCC599 R15 R16 SZESD 7272 D− D+ VBUS NTC SZESD C1 7272 D−_HOST D+_HOST R1 SZESD 7272 FUSB3307 FUSB3307 VDD D+/PDIV1 D−/PDIV0 vdd PDIV1 PDIV0 GND Resistor Divider / BC 1.2 Option VCC GATE DISC Gate Driver vdd vdd 9R V IN−ON / V IN−OFF Discharge R CC1 VCS−AMP FAULT Trigger _BLD RESET Protection CC2 vdd CC State Machine & Comparators PDIV0 Device Policy PDIV1 Manager (DPM) PDIV2 State FAULT Machine LF Osc. BMC DRIVER CRC32 Tx Protocol (+Timers) 4B5B 4B5B BMC Rcvr Protection Policy Engine (+Timers) vdd 1.1V REG X AVCCR VCS−AMP Cable Drop Compensation Option VCCR vdd BMC Encode CDR VCOMR S BMC Decode V IN−1:10 VCS−AMP V IN−1:10 Internal temp. PD Osc. vdd Analog to Digital Converter CATH IS− GND 4 IS+ CC2 5 9 8 CC2 14 1 VCC DISC 13 2 GND IFB 12 3 GATE VFB 11 4 VDD IS− 10 5 D+/PDIV1 CATH 12 IS+ 9 6 D−/PDIV0 DISC 11 CC2 8 7 CC1 CC1 7 CATH Top View FUSB3307 SOIC NTC GATE N/C GND 13 N/C CC1 3 14 VCC 12 CATH Top View 6 7 8 9 11 DISC 10 PDIV2 D+/ PDIV1 6 10 D−/PDIV0 2 16 17 18 19 20 GND 15 VCC 14 FUSB3307 QFN 1 N/C GND 3 CC1 N/C 13 4 GND Bottom View 10 9 Bottom View Figure 4. Pin Diagrams www.onsemi.com 4 2 D−/PDIV0 5 CC2 8 7 6 IS+ D−/PDIV0 VFB IFB 5 11 15 GND VDD D+/PDIV1 FUSB3307 SOIC FUSB3307 QFN IS− 4 IFB VFB VDD 12 N/C 3 20 19 18 17 16 N/C 1 VFB GATE VDD DISC IS− 13 GATE 2 IFB GND IS+ CATH NTC 14 PDIV2 1 D+/ PDIV1 Figure 3. Block Diagram VCC VFB Protection Block OVP/UVP/ OCP Protection VCS−AMP VCOMR Trim IS+ IS− FAULT VCVR CRC32 Rx Band Gap IFB NTC FUSB3307 PIN FUNCTION DESCRIPTION SOIC Pin Number QFN Pin Number Pin Name I/O Type 1 14 VCC Supply Output voltage (Input voltage to the FUSB3307). This pin is tied to the output of the power source to monitor its output voltage and supply internal bias to the FUSB3307 via the VDD pin. 4 19 VDD Supply Internal supply voltage regulator output. This pin should be connected to an 1 mF external capacitor 2 4, 15, DAP GND Ground Ground 14 12 CATH Open Drain Output Feedback to control the power supply. Typically an opto−coupler cathode on the secondary side is connected to this pin to provide feedback signal to the primary side PWM controller. Alternatively, this can be connected to the error amplifier output of a DC−DC regulator (often called the compensation pin) or with an inverting circuit to the DC−DC feedback (FB) pin. 11 8 VFB Input Output Voltage Sensing Signal. This pin is used for constant voltage (CV) regulation, and it is tied to the internal CV loop amplifier non−inverting input terminal. It is tied to the output voltage external 1:10 resistor divider and a compensation circuit 12 9 IFB Input Constant Current Amplifying Signal. The voltage level at this pin is the amplified current sense signal used for providing an external compensation circuit. Internally this pin is tied to the non−inverting input of the current loop error amplifier. 10 7 IS− Input Current sensing amplifier negative terminal. Connect this pin directly to the negative end of the current sense resistor with a short PCB trace 9 6 IS+ Input Current sensing amplifier positive terminal. Connect this pin directly to the positive end of the current sense resistor with a short PCB trace 3 17 GATE Output 13 11 DISC Open Drain I/O 7 3 CC1 I/O Configuration Channel 1. This pin is used to detect USB Type−C devices and communicate over USB PD 8 5 CC2 I/O Configuration Channel 2. This pin is used to detect USB Type−C devices and communicate over USB PD 5 20 D+/PDIV1 D+: I/O Different functionality available with Trim option (see Application Information PDIV1: Input section and note at the bottom of Table 6 below): D+: Connected to D+ for BC1.2 or resistor divider mode PDIV1: Programmable pin to select different USB Power Delivery Power (PDP) values 6 2 D−/PDIV0 D−: I/O Different functionality available upon request: PDIV0: Input D−: Connected to D− for BC1.2 or resistor divider mode PDIV0: Programmable pin to select different USB Power Delivery Power (PDP) values N/A 10 PDIV2 Input Programmable pin to select different USB Power Delivery Power (PDP) values N/A 16 NTC I/O Pin connected to external NTC resistor to sense PCB or connector temperature Description Gate drive signal to drive the gate of an NFET load switch Discharge pin. This pin should be tied to a small (40 W) external resistor that is connected to VBUS after the load switch to discharge VBUS at the connector ORDERING INFORMATION Part Number Top Mark Operating Temperature Range Package Packing Method FUSB3307D6MX −40°C to 85°C SOIC−14 NB (Pb−Free) Tape and Reel FUSB3307D6VMNWTWG (In Development) 3307 D6V −40°C to 105°C QFNW20 (Pb−Free) Tape and Reel FUSB3307D6MNWTWG (In Development) 3307 D6 −40°C to 85°C QFNW20 (Pb−Free) Tape and Reel − − Please contact ON Semiconductor sales − FUSB3307D6MX Other trim (see note at the bottom of Table 6) or package options www.onsemi.com 5 FUSB3307 Table 1. MAXIMUM RATINGS (Notes 1, 2) Symbol Value Unit VCC −0.3 to 26 V VGATE −0.3 to 30 V IFB, VFB, IS+, IS−, NTC, D+/PDIV1, D−/PDIV0, PDIV2 Pin Voltage VI/O −0.3 to 6 V VDD Pin Voltage VDD −0.3 to 6 V Power Dissipation (TA = 25°C) PD 1.5 W Operating Junction Temperature TJ −40 to 150 °C TSTG −40 to 150 °C TL 260 °C Human Body Model, ANSI/ESDA/JEDEC JS−001−2012 (Note 3) ESDHBM 2 kV Charged Device Model, JESD22−C101 (Note 3) ESDCDM 0.5 kV Rating VCC, CATH, DISC, CC1, CC2 Pin Voltage GATE Pin Voltage Storage Temperature Range Lead Temperature, (Soldering, 10 Seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All voltage values, except differential voltages, are given with respect to the GND pin. 2. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. 3. Meets JEDEC standards JS−001−2012 and JESD 22−C101. Table 2. THERMAL CHARACTERISTICS (Note 4) Rating Thermal Characteristics, Thermal Resistance, Junction−to−Air, SOIC14 Thermal Reference, Junction−to−Top, SOIC14 Thermal Resistance, Junction−to−Air, QFNW20 Thermal Reference, Junction−to−Top, QFNW20 Symbol Value Unit RqJA RqJT RqJA RqJT 75 41.6 36.1 2.3 °C/W 4. TA=25°C unless otherwise specified with JEDEC 2S2P board with no thermal vias. Table 3. RECOMMENDED OPERATING RANGES Symbol Min Max Unit Input Voltage Rating VCC 3.3 − 5% 21 + 5% V Output Current Through Load Switch IOUT 5 A Adjustable Type−C Connector VBUS Output Voltage Ambient Temperature VBUS 3.3 − 5% 21 + 5% V TA −40 85 (Commercial) 105 (Automotive) °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 4. ELECTRICAL CHARACTERISTICS VCC = 5 V, TJ = −40°C to 125°C unless otherwise specified. Parameter Test Conditions Symbol Min Typ Max Unit 5.2 5.5 V VDD SECTION VDD Operating Voltage at VCC = 20 V VCC = 20 V, IVDD = 0 mA VDD 4.75 VDD Source Current VCC = 3.3 V, VDD = 2.9 V IDD 10 mA VCC SECTION VCC−OP Continuous Operating Voltage (Note 5) 21 + 5% V Operating Supply Current at 5 V VCC = 5 V, sense resistor voltage difference (VCS) = 25 mV, sense resistor (RCS) = 5 mW ICC−OP−5V 2.4 mA Operating Supply Current at 20 V VCC = 20 V, VCS = 25 mV, Rcs = 5 mW ICC−OP−20V 3.1 mA Turn−On Threshold Voltage VCC increasing Turn−Off Threshold Voltage Turn−Off to Turn−On Hysteresis VCC−ON 2.9 3.2 3.4 VCC decreasing after VCC w VCC−ON VCC−OFF 2.80 2.87 3.10 V VCC decreasing after VCC w VCC−ON VCC−OFF_HYS 100 260 360 mV www.onsemi.com 6 V FUSB3307 Table 4. ELECTRICAL CHARACTERISTICS VCC = 5 V, TJ = −40°C to 125°C unless otherwise specified. Parameter Test Conditions Symbol VCC = 5 V, VCS = 0 mV (IP−CC1−330 and IP−CC2−330 not flowing since CC1 and CC2 are HIGH) ICC−STBY Min Typ Max Unit 0.85 1.1 mA VCC SECTION Standby Operating Supply Current VCC−UVP SECTION Ratio VCC Under−Voltage−Protection (UVP) VCS = 0 mV to VCC KCC−UVP 60 65 70 % tD−UVP 45 60 75 ms Whenever a voltage change occurs from lower VBUS to a higher VBUS tBNK−UVP 160 200 240 ms VCS = 0 mV KCC-OVP 116.0 121 127.0 % VCC−OVP−MAX 23 23.8 24.8 V tD−OVP 35 75 110 UVP Debounce Time UVP Blanking Time during a Voltage Transition VCC−OVP SECTION Ratio VCC Over−Voltage−Protection (OVP) to VCC VCC Maximum Over−Voltage−Protection OVP Debounce Time ms OVP Blanking Time during a Voltage Transition (Note 5) VBUS voltage transition step (VSTEP) v 0.5 V, Final VBUS > 13 V tBNK−OVP1 7 ms OVP Blanking Time during a Voltage Transition (Note 5) VSTEP v 0.5 V, Final VBUS < 13 V tBNK−OVP2 19 ms OVP Blanking Time during a Voltage Transition (Note 5) VSTEP > 0.5 V, Final VBUS > 13 V tBNK−OVP3 56 ms OVP Blanking Time during a Voltage Transition (Note 5) VSTEP > 0.5 V, Final VBUS < 13 V tBNK−OVP4 221 ms 40 V/V CONSTANT CURRENT LIMIT SENSING SECTION (100% Constant Current) Current−Sense Amplifier Gain (Note 5) RCS = 5 mW AV−CCR Current threshold on sensing resistor between IS+ and IS− at IOUT = 1.00 A Constant Current Limit mode and VCC = 5 V, 20 V ICS−1A 0.85 1.00 1.15 A Current threshold on sensing resistor between IS+ and IS− at IOUT = 2.00 A Constant Current Limit mode and VCC = 5 V, 20 V ICS−2A 1.85 2.00 2.15 A Current threshold on sensing resistor between IS+ and IS− at IOUT = 3.00 A Constant Current Limit mode and VCC = 5 V, 20 V ICS−3A 2.85 3.00 3.15 A Current threshold on sensing resistor between IS+ and IS− at IOUT = 4.00 A Constant Current Limit mode and VCC = 5 V, 20 V ICS−4A 3.80 4.00 4.20 A Current threshold on sensing resistor between IS+ and IS− at IOUT = 5.00 A Constant Current Limit mode and VCC = 5 V, 20 V ICS−5A 4.75 5.00 5.25 A Current threshold on sensing resistor between IS+ and IS− at DIOUT = 50 mA Constant Current Limit mode and VCC = 5 V ICS−STEP 48 50 52 mA Over Current Protection (OCP) threshold on Constant Voltage mode, PD Request Message = 3 A and VCC = 5 V sensing resistor between IS+ and IS− ICS−3A 3.42 3.60 3.78 A Over Current Protection (OCP) threshold on Constant Voltage mode, PD Request sensing resistor between IS+ and IS− Message = 5 A and VCC = 5 V ICS−5A 5.7 6.0 6.3 A tOCP−DEB 50 60 70 OVER CURRENT PROTECTION SENSING SECTION OCP Debounce Time Current threshold on sensing resistor between IS+ and IS− for enabling discharge on DISC pin during a voltage transition VBUS is decreasing Debounce time for enabling discharge on DISC pin during a voltage transition ms ICS−EN−DSCG 330 mA tCS−EN−DSCG 0.6 1.0 ms 0.330 0.340 V CONSTANT VOLTAGE SENSING SECTION VFB Reference Voltage at 3.3 V VCC = 3.3 V, VCS = 0 V www.onsemi.com 7 VCVR−3.3V 0.320 FUSB3307 Table 4. ELECTRICAL CHARACTERISTICS VCC = 5 V, TJ = −40°C to 125°C unless otherwise specified. Parameter Test Conditions Symbol Min Typ Max Unit VCVR−5.0V 0.485 0.500 0.515 V CONSTANT VOLTAGE SENSING SECTION VFB Reference Voltage at 5.0 V (Power−on reset, default) VCC = 5.0 V, VCS = 0 V VFB Reference Voltage at 9 V VCC = 9 V, VCS = 0 V VCVR−9V 0.873 0.900 0.927 V VFB Reference Voltage at 12 V VCC = 12 V, VCS = 0 V VCVR−12V 1.164 1.200 1.236 V VFB Reference Voltage at 15 V VCC = 15 V, VCS = 0 V VCVR−15V 1.455 1.500 1.545 V VFB Reference Voltage at 20 V VCC = 20 V, VCS = 0 V VFB Reference Voltage of 20 mV step DVCC = 20 mV, VCS = 0 V VCVR−20V 1.940 2.000 2.060 V VCVR−STEP−20mV 1.940 2.000 2.060 mV Minimum guaranteed sink current expected from CATH pin ICATH−Sink 2 VBUS to GND leakage resistance when VBUS is not being sourced GATE = 0 V RDISC−BUS 72.4 VCC Pin Sink Current when discharging (Note 5) Discharging current on VCC after a fault has triggered at VCC = 20 V IVCC −Sink 170 mA DISC Pin Sink Current when discharging (Note 5) Discharging current on DISC during a voltage transition at VCC = 20 V, IOUT < ICS−EN−DSCG IDISC −Sink 250 mA Discharge Time (Note 5) VBUS voltage transition step (VSTEP) v 0.5 V, Final VBUS > 13 V, IOUT < ICS−EN−DSCG tDISC1 7 ms Discharge Time (Note 5) VSTEP v 0.5 V, Final VBUS < 13 V, IOUT < ICS−EN−DSCG tDISC2 19 ms Discharge Time (Note 5) VSTEP > 0.5 V, Final VBUS > 13 V, IOUT < ICS−EN−DSCG tDISC3 56 ms Discharge Time (Note 5) VSTEP > 0.5 V, Final VBUS < 13 V, IOUT < ICS−EN−DSCG tDISC4 221 ms FEEDBACK SECTION CATH Pin Sink Current (Note 5) mA DISCHARGE SECTION 155 kW OVER TEMPERATURE PROTECTION SECTION Current Source on NTC pin (Note 6) Resistance to ground on NTC = 3.293 kW INTC 55 60 65 mA Debounce time for External Over Temperature Protection (E_OTP) (Note 6) tNTC−DEB 90 ms Internal Die Warning Temperature Threshold (Note 5) TI_WARN 125 °C Internal Die Over−Temperature Threshold (Note 5) TI_OTP 135 °C PROTECTION RECOVERY SECTION VCC Voltage Release Threshold UVP fault causing release when VCC < VLATCH Duration for Disabling Load Switch When Fault Removed in Normal Mode (Note 5) After fault OVP, UVP, OCP, E_OTP, I_OTP or CC_OVP has recovered Duration for Disabling Load Switch When Fault Removed in Debug Test Mode VLATCH 0.9 t2S_AR_NM 1.8 t2S_SR_DM V 2 2.2 100 sec ms INPUTS SECTION PDIV2, PDIV1 and PDIV0 input LOW voltage Input LOW VIL PDIV2, PDIV1 and PDIV0 input HIGH voltage Input HIGH VIH www.onsemi.com 8 0.4 VDD − 0.4 V V FUSB3307 Table 4. ELECTRICAL CHARACTERISTICS VCC = 5 V, TJ = −40°C to 125°C unless otherwise specified. Parameter Test Conditions Symbol Min Typ Max Unit TYPE C SECTION 330 mA Source Current on CC1 Pin VCC = 5 V, VCC1 = 0 V IP−CC1−330 304 330 356 mA 180 mA Source Current on CC1 Pin Used for USB PD to signal that the Sink can communicate, VCC = 5 V, VCC1 = 0 V IP−CC1−180 166 180 194 mA 330 mA Source Current on CC2 Pin VCC = 5 V, VCC2 = 0 V IP−CC2−330 304 330 356 mA 180 mA source current on CC2 Pin Used for USB PD to signal that the Sink can communicate, VCC = 5 V, VCC2 = 0 V IP−CC2−180 166 180 194 mA Input Impedance on CC1 Pin VCC = 0 V, Sourcing 330 mA on CC1 ZOPEN−CC1 126 Input Impedance on CC2 Pin VCC = 0 V, Sourcing 330 mA on CC2 kW ZOPEN−CC2 126 Ra Impedance Detection Voltage Threshold VCC = 5 V, VCC2 = 5 V, Decreasing on CC1 Pin VCC1 VRA−CC1 0.75 0.80 0.85 V Ra Impedance Detection Voltage Threshold VCC = 5 V, VCC1 = 5 V, Decreasing on CC2 Pin VCC2 VRA−CC2 0.75 0.80 0.85 V Rd Impedance Detection Voltage Threshold VCC = 5 V, VCC2 = 5 V, on CC1 Pin Decreasing VCC1 VRD−CC1 2.45 2.60 2.75 V Rd Impedance Detection Voltage Threshold VCC = 5 V, VCC1 = 5 V, on CC2 Pin Decreasing VCC2 VRD−CC2 2.45 2.60 2.75 V 150 200 ms kW Sink Attach Debounce Time (Note 5) VCC = 5 V tCCDebounce 100 GATE High Voltage at 3.3 V VCC = 3.3 V VGATE−3.3V 5.3 V GATE High Voltage at 21 V VCC = 21 V VGATE-21V 24.5 V GATE High Voltage at VIN−OVP−MAX VCC = VCC−OVP−MAX VGATE−MAX VCONN supply voltage VCONN OCP voltage VCONN OCP debounce time VCONN supply current VCC = 4.75 V, VCONN = 3 V CC1 Pin Over−Voltage Protection CC2 Pin Over−Voltage Protection CC1/CC2 OVP Debounce Time V V 3.0 ICONN_OCP 50 tVCONN_OCP 2.6 IVCONN 34 VCC1−OVP 5.5 5.75 6.0 VCC2−OVP 5.5 5.75 6.0 mA 3.6 4.7 VSafe0V 0.66 ms mA 28 tCC-OVP−DEB Safe Operating Voltage at 0 V 30 5.5 VCONN 0.73 V V ms 0.80 V 3.70 ms 1.2 V 0.075 V USB PD BMC TRANSMITTER SECTION Unit internal 1/fBitRate tUI 3.03 Logic High Voltage IOH = −165 mA or 293 mA VOH 1.05 Logic Low Voltage IOL = 763 mA VOL Rise time VDD = 4.7 mF tRise−TX 300 500 700 ns Fall time VDD = 4.7 mF tFall−TX 300 500 700 ns zDriver 33 75 W tRxFilter 100 Transmitter output impedance 1.125 USB PD BMC RECEIVER SECTION Rx bandwidth limiting filter CC receiver capacitance cReceiver Receiver Input Impedance zBmcRx ns 15 1 pF MW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Guaranteed by Design 6. QFN package only where NTC pin is available www.onsemi.com 9 FUSB3307 Application Information where the FUSB3307 directly controls the DC/DC controller. In the descriptions that follow, both of these designs are discussed when describing the operation of the FUSB3307. Interspersed within these descriptions is how it relates to USB Power Delivery (PD) and Type C specifications. These are just two example designs since there are considerably more use cases of the FUSB3307 in reference designs for power source applications. For more information on specific design needs, please contact your ON Semiconductor field application engineers. FUSB3307 has the entire PD Device Policy Manager (DPM), PD Policy Engine, Protocol and PHY layers within hardware and it responds to all the messages typical for PD Power Sources. No external processor is needed and it is completely USB PD 3.0 with PPS compliant. Two Reference Design Examples Below are two reference design example applications of the FUSB3307. One is an AC/DC design on the secondary side of the offline design and the other is a DC/DC design  FDMC012N03 VCC Q1 ESD 7272 C8 GATE VCC R4 R5 C9 C4 Sync. Rec. Ctrl (e.g. NCP430x) PWM Controller (e.g. NCP1345, NCP12601) IS+ IS− R10 R11 CATH IFB C10 R6 C5 R8 C6 C7 R7 26V VFB C1 USB Type−C Detection and Gate Drivers PD 3.0 Device Policy Manager, Policy Engine, Protocol & PHY Layers VBUS DISC R1 CC2 D−/PDIV0 D+/PDIV1 R3 CC1 C2 VDD C3 ESD 7272 ESD 7272 CV/CC Regulation 2 ESDM3551’s FUSB3307 R9 R2 Figure 5. Offline Reference Design Example CSP1 CSN 1 CSP2 CSN2 NVMFS5A140PLZ VSW1 SZ1SMB 30CAT3G VSW2 HSG2 HSG1 NVTFS4C10N NVTFS4C10N SZMM3Z 18VT1G VCC599 LSG1 2x NSVR 0240 V2 NVTFS4C10N V1 VCC599 BST1 BST2 HSG1 LSG1 HSG2 LSG2 VCCD VDRV VCC VSW1 VSW2 EN VSW 1 VSW2 C8 NVTFS002N04CL 26V LSG2 NVTFS4C10N Q1 HSG1 LSG1 HSG2 LSG2 GATE VCC NCV81599 PDRV SDA SCL CLIND ADDR AGND GND PGND1 PGND2 CSP1 CSN1 CSP2 CSN2 FB CS1 CS2 COMP SZESD 7272 R4 CSP1 CSN1 CSP2 CSN2 R5 IS+ C5 C6 R8 R6 VDD3307 PDIV2 C7 R7 R13 R14 D+_HOST C2 10 SZESD 7272 CV/CC Regulation OTP VDD 5V NIV1241 GND C1 R16 VDD3307 GND Figure 6. Automotive DC/DC Reference Design Example www.onsemi.com VCC599 D−_HOST PDIV1 FUSB3307 VFB R9 R1 CC1 PD 3.0 Device IS− Policy Manager, Policy CATH Engine, Protocol & PHY IFB Layers C4 R12 VBUS DISC USB Type− C Detection CC2 D−/ and Gate PDIV0 D+/ Drivers C3 R15 NTC D− D+ SZESD 7272 FUSB3307 Power Up and Assumptions typical default operation. However this buck−boost resistor divider is set to 1:50 ratio to set the upper limit of the voltage while the FUSB3307 directly controls the PWM operation within the buck−boost. If direct COMP pin control of the buck−boost is not desirable, then the FUSB3307 can control the FB pin via a simple external circuit. Please contact ON Semiconductor Field Application Engineers for more details. FUSB3307 will not attach to any Sink devices unless 5 V (4.75 V to 5.5 V voltage range) is first attained on its VCC pin since that is the basis of both the USB Type C and USB Power Delivery (PD) specifications. From this 5 V on VCC, the FUSB3307 derives its VDD voltage which is used for powering the internal circuitry as illustrated by this section of the block diagram shown in Figure 8. For Figure 5, the focus is on only the secondary side of this power source and only on the interactions with the FUSB3307 device. For Figure 6, only the interconnections of the FUSB3307 with the buck−boost shown will be discussed, not the buck−boost operation. It is assumed all other functionality of these AC/DC and DC/DC designs is known. For Figure 5, upon application of an AC source, the secondary side VCC starts at 5 V and for Figure 6, upon application of input VBAT, the buck−boost regulates VCC at 5 V for USB−C operation. The FUSB3307 takes its input from the resistor divider ratio comprising of R8 and R9 in Figure 5 and Figure 6 above. In Figure 5, FUSB3307 controls the CATH pin current through the opto−coupler, R11 and R10 resistors for providing the feedback to the primary side controller to regulate to 5 V as shown in Figure 7. Figure 7. Constant Voltage / Constant Current (CV/CC) section of Application Diagram Figure 8. VDD Generation with FUSB3307 In Figure 6, FUSB3307 controls the CATH pin voltage which is tied to the COMP pin of the buck−boost which directly regulates the output voltage to 5 V. The ratio of R9:(R8+R9) is expected to be 1:10 to achieve 5 V on VCC upon power up which is typically R8 = 120 kohms and R9 = 13.3 kohms. In Figure 6, the buck−boost has its feedback FB pin which has the resistor that also expects a 1:10 resistor divider in It is expected that a capacitor, C3 is connected externally (typically 1 mF) from VDD to ground to provide energy storage. VDD is regulated to be at the appropriate voltage for the internal circuitry for any USB PD contract from 3.3 V when in a USB PD Programmable Power Supply (PPS) contract to the highest PPS voltage of 21 V. www.onsemi.com 11 FUSB3307 CC1 and CC2 Lines and USB−C Receptacle Assumptions If a USB−C receptacle is used, CC1 and CC2 are connected from the receptacle to the FUSB3307’s CC1 and CC2 pins. If a hardwired connection (called “captive cable” in Type−C and USB PD specifications) is desired, the CC line is connected to CC1 (or CC2 if more convenient for routing) and the VCONN line is connected to CC2 (or CC1) pin not used above. The design in the figures above assumes a Type C receptacle (as opposed to captive cable) and all the following descriptions are consistent with this configuration. Also assumed is USB 2.0 only receptacle (D+ and D−) for a power source application without data (that is, the USB D+ and D− do not go to a USB PHY). All SuperSpeed lines (TX1+, TX1−, RX1+, RX1−, TX2+, TX2−, RX2+, RX2−) are left unconnected and the SBU1 (Side Band Use) and SBU2 pins are not used. Internally, the FUSB3307 pulls up CC1 and CC2 individually to VDD with currents that advertise 3 A capability for this power source per USB Type C specification. When a Sink device is connected to the USB−C receptacle, the voltages on CC1 and CC2 will drop down per Type C specification. The FUSB3307 will detect a legitimate attach with the Sink and accordingly turn on the VBUS FET Q1 (see VBUS Operation descriptions below). If this design needs high−voltage, short−to−VBUS protection on CC1 and CC2, the FUSB3307 protects the CC1 and CC2 lines internally to the highest VBUS voltage that is possible for USB PD. FUSB3307 also detects CC1 and CC2 pins in this over−voltage state and goes into the Type C Disabled state. But it will take a finite amount of time to detect an over−voltage event on CC1 or CC2, turn off the load switch FET Q1 and discharge VBUS and thus the over−voltage protection on CC1 and CC2 to protect these I/Os. The CC1 and CC2 connector pins are physically close to the VBUS connector pins which is why this need arises more often than not as highlighted in Figure 9. USB Type−C Detection and Gate Drivers PD 3.0 Device Policy Manager, Policy Engine, Protocol & PHY Layers C1 VBUS DISC R1 CC2 D−/PDIV0 D+/PDIV1 CV/CC Regulation FUSB3307 R2 R3 CC1 C2 VDD C3 ESD 7272 ESD 7272 2 ESDM3551’s Figure 9. CC1 and CC2 Proximity to VBUS Within Type−C Connector For USB PD traffic, per specification, the CC1 (and CC2) line needs a capacitor to ground that is between 200 pF and 600 pF to minimize noise coupling from other signals within the connector (especially if D+ and D− USB 2.0 data is sent through the USB−C connector). Since the FUSB3307 has very little internal capacitance on the CC1 and CC2 lines (cReceiver in the electrical tables above), most of this has to be supplied externally. The recommended value is 390 pF capacitors from CC1 to ground and CC2 line to ground (C1 and C2 in Figure 5 and Figure 6) and the voltage rating is dependent on the decision for high voltage protection above. VBUS Operation VBUS from the USB−C connector is typically connected to a load switch NFET (Q1) source terminal whose gate terminal is driven by the FUSB3307 gate driver via the GATE pin. There isn’t a need for putting a resistor between GATE pin and the gate of Q1 since when the load switch is first turned on, upon attach of a Sink device via the USB−C connector, the Sink device is not allowed to draw more than 500 mA. However, if desired for a soft turn−on of the FET, a small (10 ohms typical) resistor can be placed between the FUSB3307 GATE pin and the gate terminal of Q1. The drain terminal of Q1 is connected to the power VCC which is at 5 V in the normal detached operation or in an initial USB−C attach. www.onsemi.com 12 FUSB3307 Figure 10. VBUS Discharge by FUSB3307 via DISC Pin USB Type C specification requires that the supply voltage is not sourced on VBUS until an attach per Type C specification has been determined. Dual back−to−back FET’s for the load switch are not needed for reverse voltage protection since it is unlikely that VBUS is charged from an external source. For interoperability with legacy connectors, there is a case where a Type A to Type C cable is first plugged into a Type A port of a power source which then supplies 5 V on VBUS of the cable. Then the Type C connector is plugged into this design which is not plugged into the AC outlet nor gets it power from the DC input depending on the design. The 5 V from the cable will forward conduct through the Q1 FET and charge the bulk capacitor C8. This doesn’t cause an issue, since the FUSB3307 will power up, check the CC1 and CC2 lines and realize it is not a legitimate Sink device plugged in and stay detached. Upon unplugging the A to C cable, the discharge resistance (RDISC−BUS in the electrical tables above) will discharge VBUS to ground if the input voltage is still unavailable. Even if the input power is supplied to this design during this incorrect connection, VCC will regulate to 5 V which will prevent the previously forward bias body diode of Q1 FET from conducting and the FUSB3307 will wait for a legitimate Sink to be attached before turning on FET Q1. The maximum bulk capacitance is specified in the Type C specification to handle this fault case as shown in Table 5 from the USB Type C specification so as to allow for just one FET use for optimum efficiency. VBUS is discharged through a resistor (R1) via the DISC pin of the FUSB3307 as shown in the highlighted section in Figure 10. The external resistor R1 value is dependent on the total bulk capacitance (C8) of this power source so that VBUS is discharged within the time limits dictated by USB PD. A typical value for R1 is 39 W, 1 W and in addition, there is internal resistance that causes a expected discharge current within the FUSB3307 in its discharge path (IDISC −Sink in the electrical tables above). If the load current to the Sink is sufficient (exceeds ICS−EN−DSCG for tCS−EN−DSCG debounce time) such that the internal discharge is not needed, then the FUSB3307 will automatically disable internal discharge. Upon power up, the FUSB3307 will discharge VBUS in case there is any voltage on VBUS since the only way a Sink can be attached per Type C specification is if VBUS is discharged to ground (below VSafe0V) upon attach. The discharge resistance limits are governed by the Type C specification when not sourcing power on VBUS (RDISC−BUS in the electrical tables above). It is preferred that no external load/discharge resistor is connected to VBUS other than R1 to the FUSB3307 discharge DISC pin. A TVS diode connected from VBUS to ground and shown in the figures ([SZ]ESD7241) allow operating voltages up to 24 V covering the entire VBUS range of 3.3 V to 21 V for a USB PD PPS contract. This can be replaced by a TVS that covers the VBUS range for the use case of this design if needed. Table 5. TYPE−C SPECIFICATION FOR VBUS BULK CAPACITANCE Symbol Notes Max Units VBUS Capacitance Capacitance for source−only ports between VBUS and GND pins on receptacle when VBUS is not being sourced. Min 3000 mF Capacitance for DRP ports between VBUS and GND pins on receptacle when VBUS is not being sourced. 10 mF www.onsemi.com 13 FUSB3307 Capacitance to ground on the connector side VBUS connection (source of Q1) can be added if needed but it hasn’t been shown in the application diagrams above. If added, it is recommended it doesn’t exceed 1 mF for recovery from the source−source case mentioned above. The current is sensed via a small resistor R4 (5 mW typically) connected between the USB−C connector ground and the main ground plane of the power source (secondary side ground for offline design) as shown in Figure 12. Voltage and Current Sensing Operation As mentioned above (see Power Up and Assumptions), the resistor ratio from VCC to ground formed by resistors R8 and R9 (typically 1:10 ratio where R8=120k and R9=13.3k) and sensed via FUSB3307 VFB pin will sense the voltage for VCC in order to set a new voltage. For Figure 5 offline design, this will be done via the FUSB3307 CATH pin, the opto−coupler, resistor R10 and the primary side PWM controller operation. R11 provides a bias current to the CATH pin feedback circuit within the FUSB3307 and is optional. For Figure 6 buck−boost design, this will be done via the FUSB3307 CATH pin controlling the buck−boost PWM via its COMP pin. The FUSB3307 will automatically control the CATH pin based on the desired voltage as determine by the USB PD contract and the existing VCC voltage sensed by VFB. If FUSB3307’s PD communication is not responded to by the Sink upon initial attach, the FUSB3307 will continue with 5 V VBUS Type C operation until the Sink detaches. The external compensation network formed by C6/R7/C7 and R6/C5 need to be selected to achieve stable operation over the range of VBUS voltage and current transitions as shown in Figure 11. Figure 12. Current Sense Network A low pass filter formed by R5/C4 provides a stable signal for IS+ and IS− pins of the FUSB3307 to sense this current for over−current protection for fixed voltage PD contracts, constant current operation for PPS contracts and cable compensation if selected from the trim table (Table 6). It is expected that the USB−C connector ground is connected only to the current sense network resistors R4 and R5 and the connector TVS ground connections and not to the main ground plane of the NCV81599 for the DC/DC design or secondary side power ground for the offline design (FUSB3307 ground connection). However, the FUSB3307 consumes very little current and so it should have a negligible impact on this current sensing if the FUSB3307 ground connection is on the USC−C connector ground if it is more convenient in the Printed Circuit Board (PCB) layout. When in a PPS contract, if a PPS_Status message is requested, the FUSB3307 will measure the current with an internal 10−bit Analog to Digital Converter (ADC) based on the above description and report it back to the Sink on the PPS_Status message. The voltage is also reported back but it is measured off VCC with the ADC not VFB pin since the VFB pin is only used for voltage feedback. Thus if the voltage feedback resistor divider connected to VFB is modified to be slightly different from the 1:10 ratio expected, the voltage sensing for this PPS_Status message will not be affected. Figure 11. Compensation Network for Constant Voltage / Constant Current (CV/CC) Feedback For the offline design, C10 may be needed as well. For the DC/DC design, there may be a need for additional compensation networks from COMP pin to ground or from COMP to the NCV81599 supply. www.onsemi.com 14 FUSB3307 USB 2.0 Data Lines 2.0 data signals. For the automotive buck−boost design (Figure 6), short−to−VBUS protection is shown via the NIV1241 that contain TVS diodes and FETs to keep the FUSB3307 D+ and D− lines less than 5 V as shown in Figure 13. The USB 2.0 Data Lines D+ and D− can be externally connected together via a 100 ohms resistor to provide the maximum power, a legacy USB device can take, which is 1.5 A per USB Battery Charging v1.2 (BC1.2) specification. This will usually be the case when a USB−C to micro−B cable is plugged into this design where this adapter cable has the required Sink Rd resistors within it to allow the FUSB3307 to recognize a Type C attach and to source 5 V on VBUS. The Sink will go through BC1.2 steps of primary and secondary detection to detect a Dedicated Charging Port (DCP) via this resistor connection of D+ and D− and takes 1.5 A maximum from VBUS. If selected by the Trim table (Table 6), to attach to certain phones that require resistor dividers on D+ and D− then connect D+ and D− to the FUSB3307 with small (22 W typical) resistors which auto−detects which type of legacy Sink is plugged in and automatically provides the legacy device with the appropriate power level it needs to charge. Note this power level is controlled by the device itself not the power source which is typical of most legacy USB power systems. The FUSB3307 will allow for 5 V at a maximum of 3 A for even legacy devices which will take at most either 1.5 A or 2.4 A for most legacy devices. D+ and D− can also be connected to a USB Physical Layer (PHY) controller for using these lines for data traffic. In that case, the USB PHY is expected to advertise itself as a Charging Downstream Port (CDP) per BC1.2 so that the Sink can take a maximum of 1.5 A of power. D+ and D− are low voltage pins (6 V absolute maximum voltage) and are not expected to be shorted to VBUS when VBUS goes higher than 6 V. The TVS diodes connected to D+ and D− shown in the figure (ESD7104) allow operating voltages up to 5 V for the offline design (Figure 5) and typically D+ and D− are 3.3 V signals when used for USB Figure 13. D+ and D− Pin Protection Provided by the NIV1241 Power Delivery Operation FUSB3307 advertises source capabilities and responds to PD message completely autonomously following the USB PD 3.0 with PPS and Type C specifications. For more details on the USB PD messages please refer to the specification references mentioned below (See Specification References on page 19). Similarly the references mention the Type C and the BC1.2 specifications as well for further information. To allow for a variety of designs, the following table has a number of trim options to accommodate almost every design. The following Table 6 lists out the various options. While all these options exist, they can only be obtained from ON Semiconductor if requested and once delivered, the trim option cannot be changed. The default trim option column below is for a 60 W design that uses 3 A cables and is for a USB Power Delivery (PD) 3.0 design with Programmable Power Supplies (PPS) and Fixed Supplies. In the future more default options will be available for general purpose use with likely 30 W, 45 W and 90 W power levels in addition to the 60 W option. Table 6. FUSE TRIM (NOTE 7) OPTION TABLE # Function Trim Option 1 Output Power 2 Cable Compensation 3 5 A Power Source 4 Charging Output OVP Four choices of OVP thresholds: 115%, 120%, 125% and 130% 120% OVP 5 Charging Output UVP Four choices of UVP thresholds: 60%, 65%, 70% and Disabled 65% UVP 6 D+/D− versus PDIV0/PDIV1 7 Support PD 3.0 PD Power (PDP) from 16 W to 100 W in 1W increments Four choices of 50 mV/A, 100 mV/A, 150 mV/A and Disabled 0 = Max current is 3 A, no eMarker detection 1 = Max current is 5 A, eMarker detection needed 00: D+/PDIV1=D+, D−/PDIV0=D− (SOIC package without PDIV2 pin) 01: D+/PDIV1=PDIV1, D−/PDIV0=PDIV0 (SOIC package without PDIV2 pin) 10: D+/PDIV1=PDIV1, D−/PDIV0=PDIV0 PDIV2 standalone pin (QFN package) 11: D+/PDIV1=D+, D−/PDIV0=D− PDIV2 standalone pin (QFN package) 0 = Enable PD 2.0 1 = Enable PD 3.0 Default Option 60 W Disabled 0 = Max current = 3 A, no eMarker detection 00 for SOIC package 11 for QFN package 1 = Enable PD 3.0 7. ”Trim Options” means feature programmability to create new functional options in a manufacturing test program by trimming semiconductor fuses. www.onsemi.com 15 FUSB3307 as the FUSB303. Subsequent to the initial attach, the FUSB3307 will send out PD packets to advertise source capabilities as selected by the trim options in Table 6. Using the Default FUSB3307 Trim options, the FUSB3307 will source 60 W by sending out a PD Source_Capabilities message on the CC line (either CC1 or CC2 depending on connector plug orientation) using PD communication messages. The supplies advertised for the default trim option are fixed supplies and PPS supplies shown in Table 7: When a Sink device is connected via the USB−C connector, as mentioned above, the FUSB3307 will detect a legitimate Type C attach and drive the GATE pin to turn on the VBUS load switch Q1. The initial voltage on VBUS is always 5 V (4.75 V to 5.5 V voltage range) and the CC pin will advertise 3 A capability which is the maximum power allowed by a Type C (without PD) port. FUSB3307 is not expected to be used below 15 W power level since ON Semiconductor has other Type C only controllers such Table 7. DEFAULT TRIM OPTION ADVERTISED PD SOURCE CAPABILITIES [Augmented] Power Data Object Output Voltage Maximum Sink Current Expected Current Protection PDO1 5V 3A Over Current Protection PDO2 9V 3A Over Current Protection PDO3 12 V 3A Over Current Protection PDO4 15 V 3A Over Current Protection PDO5 20 V 3A Over Current Protection APDO1 3.3 V min, 21 V max 3A Current Limit Protection The Sink will select one of these offerings and enter into a PD explicit contract with the FUSB3307 which is the first step of all subsequent PD communication. If the Sink selects an illegal data object number or requests an illegal current level, the FUSB3307 will reject the request. A short amount of time after this reject message is sent, the FUSB3307 will resend its Source_Capabilties message and expect a valid request. If a 5 A capability is chosen from the trim table (Table 6) above then the FUSB3307 will use USB PD Discover Identity messages to interrogate the capabilities of the cable attached to it to ensure that it is a 5 A capable cable before the FUSB3307 advertises 5 A source capabilities. The FUSB3307 supplies the VCONN power needed to support this discovery process as specified in the USB PD and Type C specification which eliminates the need for an external VCONN power source and multiple power switches. If the cable is only 3 A, even though the FUSB3307 can support 5 A, the advertised capabilities will all drop down to 3 A. This will be done on the first source capabilities advertised but there is an indication in the USB PD Status message sent to indicate that the source is 5 A capable but the cable has limited the source capabilities to 3 A. In Table 8 the section of the SOP Status Data Block (SDB) is shown that communicates this power limitation. The FUSB3307 follows all USB PD specifications including dropping down to USB PD 2.0 operation when it detects a USB PD 2.0 Sink and a USB PD 2.0 cable eMarker (if applicable). All subsequent operation will follow the USB PD 2.0 specification until the FUSB3307 is reset via a Hard Reset message or undergoes a power cycle. Standby Operation When the FUSB3307 is in standby, where the source power supply still has to be maintained at 5 V via the CATH pin for a typical Type C connection but no Sink device has been attached to the FUSB3307, then the current consumed is just ICC−GREEN ( < 870 mA typical). This low standby current allows for all the energy standard specifications to be well exceeded for offline designs (typically the FUSB3307 within the offline design can achieve 21 mW standby power). PDIV0, PDIV1 and PDIV2 Options FUSB3307 can adjust the output power from the trim table (Table 6) to have any PDP (Power Delivery Power) from 16 W to 100 W (called TrimPDP here) in 1 W increments. However, in some applications in may be advantageous to trim all FUSB3307 devices to 60 W PDP and use them in both single port and dual port configurations. For the dual port configuration, the PDP would need to be halved for assured capacity charger ports and PDIV2 pin does just that – cuts the trimmed 60 W PDP in half to 30 W. For further divider ratios, PDIV1 and PDIV0 can be used as well. PDIV2 is available only in the QFN version of the FUSB3307 while PDIV0 and PDIV1 share their functionality with the D− and D+ pins respectively in both the QFN and SOIC package options. For the PDIV2 pin, the selection of power is shown in Table 9. Table 8. PD Status Message to Sink Showing Power is Limited by the Cable Offset Field Bit Description 5 Power Status 0 ... 1 Source power limited due to cable supported current 2 ... 6...7 ... www.onsemi.com 16 FUSB3307 In all the above calculations, no Advertised PDP will ever go below 16 W minimum if in a USB PD contract. For example, if TrimPDP=100 and when PDIV0, PDIV1 and PDIV2 pins are available and they are [PDIV2:PDIV1:PDIV0] = 001 then Advertised PDP is 25 W (100W*25%). However if TrimPDP=60, then Advertised PDP is 16 W not 15 W (60W*25%). When any of these pins, PDIV0, PDIV1 and PDIV2 are changed, the connected PD Sink has to ask for Source Capabilities to get these new capabilities or if this Sink or the FUSB3307 executes a Soft_Reset or Hard Reset which causes the new advertised capabilities to be sent by the FUSB3307. Alternatively recovery from any protection operation would cause the FUSB3307 to advertise the new PDP values based on the PDIV0, PDIV1 and PDIV2 pins setting. Table 9. PDIV2 Pin Changing Advertised PD Power PDIV2 Pin State Advertised PDP (Power Delivery Power) 1 100% of TrimPDP 0 50% of TrimPDP With the SOIC package and PDIV0 and PDIV1 pins selected, the power can be controlled as shown below. In this case there is no PDIV2 pin and the PDIV0 and PDIV1 pins are used to trim power, as shown in Table 10. Table 10. PDIV0 and PDIV1 Pins Changing Advertised PD Power PDIV1 Pin State PDIV0 Pin State Advertised PDP (Power Delivery Power) 1 1 100% of TrimPDP 1 1 75% of TrimPDP Protection Operation 0 1 50% of TrimPDP 0 0 25% of TrimPDP FUSB3307 has a number of ways it protects itself as shown in Table 12. If PDIV2 is also available (i.e. QFN package) and in the above trim table (Table 6) the pins D+/PDIV1 and D−/PDIV0 allow PDIV0 and PDIV1 to be available as pins, then this is the PDP advertised, as shown in Table 11. Table 11. PDIV0, PDIV1 and PDIV2 Pins Changing Advertised PD Power PDIV2 Pin State PDIV1 Pin State PDIV0 Pin State Advertised PDP (Power Delivery Power) 1 1 1 100% of TrimPDP 1 1 0 87.5% of TrimPDP 1 0 1 75% of TrimPDP 1 0 0 62.5% of TrimPDP 0 1 1 50% of TrimPDP 0 1 0 37.5% of TrimPDP 0 0 1 25% of TrimPDP 0 0 0 12.5% of TrimPDP Table 12. Protection Modes Available Symbol Description Pin(s) Used Package OVP Output Voltage Over Voltage Protection VCC SOIC & QFN UVP Output Voltage Under Voltage Protection VCC SOIC & QFN OCP Over Current Protection IS+ & IS− SOIC & QFN none SOIC & QFN I_OTP Internal Over Temperature Protection E_OTP External Over Temperature Protection NTC QFN only CC_OVP CC1 or CC2 Over Voltage Protection CC1 / CC2 SOIC & QFN CC1 or CC2 VCONN Over Current Protection CC1 / CC2 SOIC & QFN VCONN_OCP www.onsemi.com 17 FUSB3307 For compliance with the USB PD specification, the FUSB3307 will trigger UVP whenever VCC is below VCC−OFF. This allows protection for a direct short of VBUS to ground separately or in conjunction with the OCP fault described below. If VCC < VCC−OFF fault is triggered, then to resume normal operation, VCC has to go below VLATCH to reset the FUSB3307 to exit this fault condition. OVP and UVP are sensed via an internal resistor divider that divides VCC by 10 to determine the voltage from the power source. CC1 and CC2 are directly sensed for over voltage. For E_OTP (QFN package option only), a pin NTC is available that is connected to an NTC resistor to ground usually in parallel with another resistor to ground for linearity. For I_OTP (SOIC and QFN packages), an internal temperature monitor is used. For all faults except VCONN_OCP fault, upon detection, the FUSB3307 will disable the Type C connection with the Sink (no pull−up on CC), shut off VBUS load switch and keep monitoring the fault. Once the fault has been removed, the FUSB3307 starts up at 5 V after t2S_AR_NM seconds and reconnects with the Sink. Over Current Protection (OCP) and Constant Current Limit (CL) If VBUS is shorted to ground, either the UVP fault described above could trigger or the OCP fault, or both. FUSB3307 senses the current via a small R4 resistor (5 mW typical) as described in the Voltage and Current Sensing section above. The OCP fault is triggered at 120% of the maximum current for the requested Power Data Object (PDO) for fixed supplies only (ICS−3A typically 3.6 A for a 3 A maximum fixed supply current). Once this OCP fault occurs, the FUSB3307 protects the system as described in the Protection Operation section above. An Alert message is sent upon the FUSB3307 establishing an explicit contract with the Sink and a PD “Status” message from the FUSB3307 will include the OCP history. For PPS APDO’s (Augmented Power Data Objects), Constant Current Limiting (CL) is used as specified in the USB PD specification where the voltage will drop to a low value based on keeping the current constant and equal to the requested PPS current. In this case UVP described above will trigger if VCC drops below VCC−OFF since any voltage from the lowest 3.3 V – 5% to the PPS requested voltage could occur with current limiting. If the PPS current limit is changed with a new PD Request message, the VCC voltage may change accordingly to a new value based on the current limiting function. An Alert message is sent whenever there is a switch from Constant Current Limit (CL) to Constant Voltage (CV) mode and vice versa. For PPS_Status messages, this flag that shows whether the FUSB3307 is in CL or CV mode, is sent along with the VCC voltage and load current as sensed by R4 to monitor the FUSB3307 while it provides PPS voltages and currents. Output Over Voltage Protection (OVP) FUSB3307 has built−in OVP based on the Trim Table (Table 6). For the default OVP case, whenever VCC, as sensed by an internal 1:10 resistor divider, exceeds KCC−OVP (typically 120%) of the requested VCC from the power source for a debounce time of tD−OVP, then the OVP fault would be triggered. Upon detection, the FUSB3307 will disable the Type C connection with the Sink (no pull−up on CC), shut off VBUS load switch and keep monitoring VCC to determine if the OVP is still present. When OVP is removed, a timer is started which when expired in t2S_AR seconds, causes the FUSB3307 to reestablish the Sink Type C connection with the initial 5 V VBUS supplied as if it were initially attached. During transitions between VCC voltages, the OVP circuitry is blanked or disabled for tBNK−OVP time to ensure that false triggering of OVP doesn’t occur. To ensure safe operation over all voltages of VCC, the maximum VCC voltage is limited to VCC−OVP−MAX. Output Under Voltage Protection (UVP) FUSB3307 has a built−in UVP based on the Trim Table (Table 6). For the default UVP case, whenever VCC, as sensed internally, is below KCC−UVP (typically 65%) of the requested output voltage from the power source for a debounce time of tD−UVP, then the UVP fault would be triggered. No PD Alert messages are sent for this fault. During transitions between VCC voltages, the UVP circuitry is blanked or disabled for tBNK−UVP time to ensure that false triggering of UVP doesn’t occur. For PPS contracts, if current limiting causes the voltage to decrease, the UVP fault will not trigger at 65% of VCC since all voltages from the requested voltage to VCC−OFF, the lowest voltage, are valid. Over Temperature Protection (I_OTP and E_OTP) FUSB3307 has two different over temperature faults, E_OTP and I_OTP. For E_OTP, when the QFN package is used, there is a NTC pin that is expected to be connected to an NTC resistor in parallel with a regular resistor for linearity. The FUSB3307 provides a INTC current source (typically 60 mA) on the NTC pin to bias this NTC resistor so that an internal A/D converter measures the external temperature as shown in Figure 14. www.onsemi.com 18 FUSB3307 VCC FAULT 9R V IN−1:10 OVP/UVP/ OCP R V CS−AMP Protection V CS−AMP V IN−1:10 CATH V COMR Protection Block vdd Analog to Digital Converter Internal temp. NTC Figure 14. Protection Section of Block Diagram for UVP, OVP, OCP, and OTP Faults This NTC measured temperature is useful for dynamic monitoring by the Sink via FUSB3307 provided PD Status messages which contains this NTC temperature in this package option. If this temperature exceeds a warning threshold (100°C for a NTC resistor of 100 kW ± 1%, B25/50 = 4300K ± 1% to ground in parallel with a 20 kW ± 1% to ground) for tNTC−DEB debounce time, then a PD Alert message is sent to the Sink indicating this temperature warning. If however, the E_OTP threshold is exceeded (110°C for a NTC resistor of 100 kW ± 1%, B25/50 = 4300K ± 1% to ground in parallel with a 20 kW ± 1% to ground) for tNTC−DEB debounce time, then an E_OTP fault is triggered as described in the Protection Operation section above. Upon re−establishing an explicit contract with the Sink, the FUSB3307 sends an Alert to let the Sink know it previously experienced an Over Temperature Protection event. The SOIC package version of the FUSB3307 doesn’t have an NTC pin and so the internal die temperature is monitored. When the die temperature exceeds TINT−W threshold for tNTC−DEB debounce time, then a PD Alert message is sent to the Sink indicating this temperature warning. If however, the TINT−OTP threshold is exceeded for tNTC−DEB debounce time, then an I_OTP fault is triggered and executing protection as described in Protection Operation section above. The FUSB3307 sends an Alert to let the Sink know it previously experienced an Over Temperature Protection event. This internal die temperature is monitored also in the QFN package option and either an E_OTP fault (based off the NTC pin voltage) or an I_OTP fault causes the FUSB3307 to disconnect and shut off VBUS. The temperature warning for the QFN package is only triggered via the NTC resistor not the internal die temperature. to start protecting the system when the CC voltage is beyond it normal operating range. If the CC voltage is above VCC1−OVP (if CC is CC1 pin) or above VCC2−OVP (if CC is CC2 pin) threshold for tCC−OVP−DEB debounce time, then the FUSB3307 protects the system by triggering this fault and executing protection as described in Protection Operation section above. CC1 and CC2 Over Voltage Protection (CC_OVP) • VCONN Over Current Protection (VCONN_OCP) FUSB3307 will turn on VCONN whenever it needs to read the eMarker in the cable only if 5 A capability is chosen from the trim table (Table 6) above and this design has a Type C connector and not a hardwired captive cable. When VCONN is sourced, per USB PD specification only 100 mW maximum (5 V with 20 mA for the FUSB3307) needs to be supplied for a USB 2.0 source application. If the VCONN current exceeds ICONN_OCP (typical 50 mA) for tVCONN_OCP then the FUSB3307 will disable the VCONN supply and abort the eMarker discovery process. The default maximum current of 3 A will be used for all source capabilities for USB PD messages in the latter case and the normal PD messaging will occurs without interruption. No Alert messages will be sent but the PD Status message will have a bit to indicate that the cable limited the FUSB3307 from advertising 5 A source capabilities. Specifications References • Universal Serial Bus Power Delivery specification • • FUSB3307 protects against the CC1 and CC2 connector pins being shorted to VBUS up to 26 V and it has the ability revision 3.0 version 2.0 + ECNs up to 07 February, 2020 Universal Serial Bus Type C Cable and Connection Specification release 2.0, dated August, 2019 USB Battery Charging Specification, revision 1.2, dated December 7, 2010 Universal Serial Bus Power Delivery specification revision 2.0 version 1.3, dated 12 January, 2017 www.onsemi.com 19 FUSB3307 PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L D A B 14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. A3 E H L 1 0.25 M DETAIL A 7 B 13X M b 0.25 M C A S B S 0.10 e DETAIL A h A X 45 _ M A1 C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 20 INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ FUSB3307 PACKAGE DIMENSIONS QFNW20 4x4, 0.5P CASE 484AT ISSUE O ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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