GBU8A

DATA SHEET www.onsemi.com Bridge Rectifiers GBU8A - GBU8M Features • • • • • Glass−Passivated Junction Surge Overload Rating: 200 A Peak Reliable Low−Cost Construction Utilizing Molded Plastic Technique Ideal for Printed Circuit Board UL Certified: UL #E258596 SIP4 CASE 127EL PACKAGE MARKING AND ORDERING INFORMATION Part Number Marking Package Packing Method GBU8A GBU8A GBU 4L Rail GBU8B GBU8B GBU8D GBU8D GBU8G GBU8G GBU8J GBU8J GBU8K GBU8K GBU8M GBU8M MARKING DIAGRAM RU$Y&Z&3 GBU − RU $Y &Z &3 GBU8A © Semiconductor Components Industries, LLC, 2010 September, 2021 − Rev. 3 1 ~ 8A ~ + = UL Marking = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Specific Device Code Publication Order Number: GBU8B/D GBU8A − GBU8M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Parameter Symbol 8A 8B 8D 8G 8J 8K 8M Units VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V VR IF(AV) Average Rectified Forward Current TA = 100°C 8.0 A TA = 45°C 6.0 A 200 A IFSM Non−Repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine−Wave TSTG Storage Temperature Range −55 to +150 °C Operating Junction Temperature −55 to +150 °C TJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARECTERISTICS (TA = 25°C unless otherwise noted) Parameter Value Units Power Dissipation 16 W RqJA Thermal Resistance per Leg, Junction to Ambient (Note 1) 18 °C/W RqJL Thermal Resistance per Leg, Junction to Case (Note 2) 3 °C/W Value Units Symbol PD 1. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm) 2. Heat sink mounting, 4 × 4 × 0.15 inch copper plate ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol VF Forward Voltage, per Element 8.0 A 1.0 V IR Reverse Current, per Element at Rated VR TA = 25°C 5.0 mA TA = 100°C 500 mA I2t I2t t < 8.35 ms 166 A2s Rating for Fusing Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 GBU8A − GBU8M TYPICAL PERFORMANCE CHARACTERISTICS 100 HEAT−SINK MOUNTING, TC 4”x4”x0.15” COPPER PLATE 6 IF, Forward Current (A) IF, Average Rectified Forward Current (A) 8 4 2 0 MOUNTED ON PC BOARD, TA 0.5” (12.7 mm) LEAD LENGTH 60 Hz RESISTIVE OR INDUCTIVE LOAD 0 50 100 10 TA = 25°C Pulse Width = 300 ms 1% Duty Cycle 1 0.1 0.7 150 Ambient Temperature (5C) TC = 100°C IFSM, Peak Forward Surge Current (A) IR, Reverse Current (mA) 1.1 1.2 1.3 1.4 250 1 0.1 TC = 25°C 0 20 40 60 80 100 120 150 100 50 0 140 TA = 25°C f = 1.0 MHz Visg = 50m Vp−p 50 5 10 50 10 Figure 4. Non−Repetitive Surge Current 400 1 1 Number of Cycles at 60 Hz Figure 3. Reverse Current vs. Reverse Voltage 100 TJ = 150°C 8.3 ms Single Half Sine−Wave 200 Percent of Rated Peak Reverse Voltage (%) CT, Total Capacitance (pF) 1.0 Figure 2. Forward Voltage Characteristics 10 10 0.9 VF, Forward Voltage (V) Figure 1. Forward Current Derating Curve 0.01 0.8 100 VR, Reverse Voltage (V) Figure 5. Total Capacitance www.onsemi.com 3 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SIP4 22.05x18.55 CASE 127EL ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13717G SIP4 22.05x18.55 DATE 31 DEC 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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