GRJ033R60J105ME11J

SiHA2N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK • • • • • • G GD S S APPLICATIONS N-Channel MOSFET • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C 850 VGS = 10 V Qg max. (nC) 2.38 90 Qgs (nC) 11 Qgd (nC) 19 Configuration Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free and halogen-free SiHA2N80E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 800 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) a VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current b ID IDM Linear derating factor Single pulse avalanche energy c EAS Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dv/dt d Soldering recommendations (peak temperature) e For 10 s Mounting torque, M3 screw UNIT V 2.8 1.8 A 5 0.23 W/°C 14 mJ PD 29 W TJ, Tstg -55 to +150 °C dv/dt 70 0.13 V/ns 260 °C 0.6 Nm Notes a. Limited by maximum junction temperature b. Repetitive rating; pulse width limited by maximum junction temperature c. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 0.9 A d. ISD  ID, di/dt = 100 A/μs, starting TJ = 25 °C e. 1.6 mm from case S18-0587-Rev. B, 18-Jun-2018 Document Number: 92070 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA2N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 65 Maximum junction-to-case (drain) RthJC - 4.3 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 800 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 1.0 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 800 V, VGS = 0 V - - 1 VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 10 Gate-source leakage IGSS Zero gate voltage drain current IDSS μA - 2.38 2.75  gfs VDS = 30 V, ID = 1.0 A - 1.0 - S Input capacitance Ciss 315 - Coss - 20 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output capacitance - 6 - Effective output capacitance, energy related a Co(er) - 13 - Effective output capacitance, time  related b Co(tr) - 45 - - 9.8 19.6 - 2.4 - Drain-source on-state resistance Forward transconductance RDS(on) VGS = 10 V ID = 1.0 A Dynamic pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 1.0 A, VDS = 480 V Gate-drain charge Qgd - 3.9 - Turn-on delay time td(on) - 11 22 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1  - 7 14 - 19 38 - 27 54 f = 1 MHz, open drain 1.8 3.6 7.2 - - 2.8 - - 5 nC ns  Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 1 A, VGS = 0 V TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V S - - 1.2 V - 278 556 ns - 0.9 1.8 μC - 5 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S18-0587-Rev. B, 18-Jun-2018 Document Number: 92070 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA2N80E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 6 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 4 RDS(on), Drain-to-Source On-Resistance (Normalized) 3 2 1 0 5 10 15 VDS, Drain-to-Source Voltage (V) 1.5 1.0 VGS = 10 V 0.5 -60 -40 -20 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics 10 000 3 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 2 TJ = 150 °C VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) ID, Drain-to-Source Current (A) 2.0 0 0 1 Ciss 100 Coss 10 Crss 1 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 0 20 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 10 000 6 3.0 2.5 Coss, Output Capacitance (pF) 5 ID, Drain-to-Source Current (A) 2.5 TJ = 25 °C 4 3 TJ = 150 °C 2 1000 2.0 Eoss Coss 1.5 100 1.0 0.5 1 VDS = 31.6 V 10 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S18-0587-Rev. B, 18-Jun-2018 20 Eoss, Output Capacitance Stored Energy (μJ) ID, Drain-to-Source Current (A) 5 ID = 1 A TJ = 25 °C 0 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 92070 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA2N80E www.vishay.com Vishay Siliconix 3.0 VDS = 480 V VDS = 300 V VDS = 120 V 2.5 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 12 6 1.0 0.5 0 0 3 6 9 Qg, Total Gate Charge (nC) 25 12 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 75 100 125 TC, Case Temperature (°C) 150 1 TJ = 25 °C VGS = 0 V 0.1 0 0.3 0.6 0.9 1.2 VSD, Source-Drain Voltage (V) 1.5 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this area limited by RDS(on) VDS, Drain-to-Source Breakdown Voltage (V) 1050 TJ = 150 °C 10 50 Fig. 10 - Maximum Drain Current vs. Case Temperature 10 ISD, Reverse Drain Current (A) 1.5 3 0 ID, Drain Current (A) 2.0 1025 1000 975 950 925 900 875 850 825 ID = 250 μA 800 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM limited 100 μs 1 Limited by RDS(on)* 1 ms 0.1 TC = 25 °C, TJ = 150 °C, single pulse 10 ms BVDSS limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S18-0587-Rev. B, 18-Jun-2018 Document Number: 92070 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA2N80E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.05 0.02 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ 12 V D.U.T. Rg 0.2 μF 0.3 μF + - VDD + D.U.T. IAS - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S18-0587-Rev. B, 18-Jun-2018 Document Number: 92070 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA2N80E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current dI/dt waveform Diode recovery dV/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92070. S18-0587-Rev. B, 18-Jun-2018 Document Number: 92070 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK Thin Lead E ØP A A1 d2 d3 d1 D L1 b2 x 3 L bx3 c A2 e DIMENSIONS SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.30 4.70 0.169 0.185 A1 2.50 2.90 0.098 0.114 A2 2.40 2.80 0.094 0.110 b 0.60 0.80 0.024 0.031 b2 0.60 0.90 0.024 0.035 c - 0.60 - 0.024 D 8.30 8.70 0.327 0.342 d1 14.70 15.30 0.579 0.602 d2 2.90 3.10 0.114 0.122 d3 3.30 3.70 0.130 0.146 E 9.70 10.30 0.382 0.406 e 2.50 2.70 0.098 0.106 L 13.40 13.80 0.528 0.543 L1 1.00 2.80 0.039 0.110 ØP 3.00 3.40 0.118 0.134 ECN: E20-0684-Rev. D, 28-Dec-2020 DWG: 6021 Revision: 28-Dec-2020 Document Number: 62649 1 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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