GRM0335C1HR10WD01D

CHIP MONOLITHIC CERAMIC CAPACITOR GRM0335C1HR10WD01_ (0201, C0G, 0.1pF, 50Vdc) _: packaging code Reference Sheet 1.Scope This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment. 　　 2.MURATA Part NO. System (Ex.) GRM 03 (1)L/W Dimensions 3 5C 1H R10 W D01 (2)T (3)Temperature (4)DC Rated (5)Nominal (6)Capacitance (7)Murata’s (8)Packaging Code Dimensions Characteristics Voltage Capacitance Tolerance Control Code 3. Type & Dimensions L W T e g e (Unit:mm) g (1)-1 L (1)-2 W (2) T e 0.6±0.03 0.3±0.03 0.3±0.03 0.1 to 0.2 0.2 min. 4.Rated value (3) Temperature Characteristics (Public STD Code):F(EIA) Temp. coeff Temp. Range or　Cap. Change (Ref.Temp.) 0±30 ppm/°C 25 to 125 °C (25 °C) (4) DC Rated Voltage 50 Vdc (6) (5) Nominal Capacitance Capacitance Tolerance 0.1 pF ±0.05 pF Specifications and Test Methods (Operationg Temp. Range) -55 to 125 °C 5.Package mark D J D (8) Packaging f180mm Reel PAPER f330mm Reel PAPER Packaging Unit 15000 pcs./Reel 50000 pcs./Reel B Bulk Bag 1000 pcs./Bag C Bulk Case 50000 pcs./Case Product specifications in this catalog are as of Aug.3,2011,and are subject to change or obsolescence without notice. Please consult the approval sheet before ordering. Please read rating and !Cautions first. GRM0335C1HR10WD01-01 1 SPECIFICATIONS AND TEST METHODS Specification No. Item Temperature Compensating Type 1 Operating Temperature Range -55C 2 Rated Voltage See the previous pages 3 4 5 Appearance Dimension Dielectric Strength No defects or abnormalities Within the specified dimensions No defects or abnormalities 6 Insulation Resistance More than 10,000M or 500∙F (whichever is smaller) 7 8 Capacitance Q/ Dissipation Factor (D.F.) Within the specified tolerance [R6,R7,C8,L8] 30pF and over : W.V.:100V : 0.025max.(C < 0. 068F) Q ≧ 1000 : 0.05max.(C ≧ 0.068F) W.V.:25/50V :0.025max. 30pF and below : W.V.:16/10V :0.035max. Q ≧ 400+20C W.V.:6.3V/4V :0.05max. (C < 3.3F) :0.1max.(C ≧ 3.3F) C:Nominal [R9]W.V.:50V: 0.05max. Capacitance (pF) [E4] W.V.:25Vmin :0.025max. [F5] W.V.:25Vmin. :0.05max. (C  0.1F) :0.09max. (C ≧ 0.1F) W.V.:16/10V:0.125max. W.V.:6.3V:0.15max. 9 to +125C Test High Dielectric Type Capacitance Capacitance Within the specified Temperature Change tolerance. Character-ist (Table A -1) ics R6 : -55C to + 85C R7 : -55C to +125C C8 : -55C to + 105C E4 : 10C to + 85C F5 : -30C to + 85C L8/R9 : -55C to +150C Char. Coefficent Reference Temp. Cap. Change R6 -55C to +85C Within ±15% R7 C8 -55C to +125C -55C to +105C Within ±15% Within ±22% L8 Temperature Temp. Range -55C to +125C 25C +125C to+150C Within ±15% Within+15/-40% R9 -55C to+150C Within ±15% E4 +10C to +85C Within+22/-56% F5 -30C to +85C Within+22/-82% Within the specified tolerance. (Table A -1) Capacitance Within ±0.2% or ±0.05 pF Drift (Whichever is larger.) Not apply to 1X/25V 10 Adhesive Strength of Termination a c b Reference Temperature : 25C The rated voltage is defined as the maximum voltage which may be applied continuously to the capacitor. When AC voltage is superimposed on DC voltage, VP-P or VO-P, whichever is larger, should be maintained within the rated voltage range. Visual inspection. Using calipers or Microscope. (GRM02 size is based on Microscope) No failure should be observed when 300% of the rated voltage (C to 7U and 1X) or 250% of the rated voltage (R6, R7,C8,E4 and F5) is applied between the terminations for 1 to 5 seconds, provided the charge/ discharge current is less than 50mA. The insulation resistance should be measured with a DC voltage not exceeding the rated voltage at 25C and 75%RH max. and within 2 minutes of charging. The capacitance/Q/D.F. should be measured at 25C at the frequency and voltage shown in the table. Char. C C to 7U,1X to 7U,1X (1000pF and (more than 1000pF) below) R6,R7,C8,F5 (C ≦ 10F) R6,R7,F5 (C>10F) E4 Item Frequency Voltage 1±0.1MHz 1±0.1kHz 0.5 to 5Vrms 1±0.2Vrms 120±24Hz 1±0.1kHz 0.5±0.1Vrms 0.5±0.05Vrms The capacitance change should be measured after 5 min. at each specified temperature stage. (1)Temperature Compensating Type The temperature coefficient is determind using the capacitance measured in step 3 as a reference. When cycling the temperature sequentially from step1 through 5 (C+25C to +125C , other temp. coeffs.:+25C to +85C ) the capacitance should be within the specified tolerance for the temperature coefficient and capacitance change as Table A-1. The capacitance drift is caluculated by dividing the differences betweeen the maximum and minimum measured values in the step 1,3 and 5 by the cap value in step 3. Step Temperature(C ) 1 2 25±2 -55±3(forC to 7U/1X/R6/R7/C8/L8/R9) -30±3(for F5), 10±3(for E4) 3 4 25±2 150±3(for R9),125±3(for C/R7), 105±3(for C8),85±3(for other TC) 5 25±2 (2) High Dielectric Constant Type The ranges of capacitance change compared with the 25C value over the temperature ranges shown in the table should be within the specified ranges.  Initial measurement for high dielectric constant type. Perform a heat treatment at 150+0/-10C for one hour and then set for 24±2 hours at room temperature. Perform the initial measurement. Solder the capacitor to the test jig (glass epoxy board) shown in Fig.1 using a eutectic solder. Then apply *10N force in parallel with the test jig for 10±1sec. The soldering should be done either with an iron or using the reflow method and should be conducted with care so that the soldering is uniform and free of defects such as heat shock *5N (GR15, GRM18) 2N (GR03),1N(GR02) No removal of the terminations or other defect should occur. Solder resist Fig.1 Method Baked electrode or copper foil Type a b c GR02 0.2 0.56 0.23 GR03 0.3 0.9 0.3 GR15 0.4 1.5 0.5 GRM18 1.0 3.0 1.2 GRM21 1.2 4.0 1.65 GRM31 2.2 5.0 2.0 GRM32 2.2 5.0 2.9 GRM43 3.5 7.0 3.7 GRM55 4.5 8.0 5.6 (in:mm) JEMCGS-0015Q 2 SPECIFICATIONS AND TEST METHODS Specification No. Item Temperature Compensating Type Test High Dielectric Type 11 Vibration Appearance No defects or abnormalities Resistance Capacitance Within the specified tolerance Q/D.F. 30pF and over : [R6,R7,C8,L8] Q ≧ 1000 W.V.:100V : 0.025max. (C < 0. 068F) : 0.05max.(C ≧ 0.068F) 30pF and below: W.V.:25/50V :0.025max. Q ≧ 400+20C W.V.:16/10V :0.035max. W.V.:6.3V/4V :0.05max. (C < 3.3F) C:Nominal :0.1max.(C ≧ 3.3F) Capacitance (pF) [R9]W.V.:50V: 0.05max. [E4] W.V.:25Vmin. :0.025max [F5] W.V.:25Vmin. :0.05max. (C  0.1F) :0.09max.(C ≧ 0.1F) W.V.:16/10V:0.125max. W.V.:6.3V:0.15max. 12 Deflection Appearance No defects or abnormalities. Capacitance Within ± 5% or ± Within ±10% Change 0.5pF (Whichever is larger) Method Solder the capacitor on the test jig (glass epoxy board) in the same manner and under the same conditions as(10). The capacitor should be subjected to a simple harmonic motion having a total amplitude of 1.5mm, the frequency being varied uniformly between the approximate limits of 10 and 55Hz. The frequency range, from 10 to 55Hz and return to 10Hz, should be traversed in approximately 1 minute. This motion should be applied for a period of 2 hours in each 3 mutually perpendicular directions(total of 6 hours). Solder the capacitor on the test jig (glass epoxy board) shown in Fig.2 using a eutectic solder. Then apply a force in the direction shown in Fig 3 for 5±1sec. The soldering should be done by the reflow method and should be conducted with care so that the soldering is uniform and free of defects such as heat shock. f4.5 c 40 b a 100 R230 20 50 Pressunzing speed:1.0mm/sec. Pressunze (GR02/03,GR15:0.8mm) Type GR02 GR03 GR15 GRM18 GRM21 GRM31 GRM32 GRM43 GRM55 Flexure: ≦1 Capacitance meter 45 45 Fig.3 13 Solderability of Termination 75% of the terminations is to be soldered evenly and continuously 14 Resistance to Soldering Heat The measured and observed characteristics should satisfy the specifications in the following table Appearance No defects or abnormalities Capacitance Within ±2.5% or ±0.25pF Change (Whichever is larger) t : 1.6mm Fig.2 R6,R7,C8,L8,R9:Within ±7.5% E4,F5:Within ±20% a 0.2 0.3 0.4 1.0 1.2 2.2 2.2 3.5 4.5 b 0.56 0.9 1.5 3.0 4.0 5.0 5.0 7.0 8.0 c 0.23 0.3 0.5 1.2 1.65 2.0 2.9 3.7 5.6 (in:mm) Immerse the capacitor in a solution of ethanol(JIS-K-8101) and rosin (JIS-K-5902) (25% rosin in weight propotion). Preheat at 80 to 120C for 10 to 30 seconds. After preheating , immerse in an eutectic solder solution for 2±0.5 seconds at 230±5C or Sn-3.0Ag-0.5Cu solder solution for 2±0.5 seconds at 245± 5C. Preheat the capacitor at *120 to 150C for 1 minute. Immerse the capacitor in an eutectic solder solution* or Sn-3.0Ag-0.5Cu solder solution at 270±5C for 10±0.5 seconds. Set at room temperature for 24±2 hours, then measure. *Not apply to GRM02 ∙ Initial measurement for high dielectric constant type Perform a heat treatment at 150+0/-10C for one hour and then set at room temperature for 24±2 hours. Perform the initial measurement. *Preheating for GRM32/43/55 Q/D.F. I.R. Dielectric Strength JEMCGS-0015Q 30pF and over : Q ≧ 1000 [R6,R7,C8,L8] W.V.:100V : 0.025max.(C < 0. 068F) : 0.05max. (C ≧ 0.068F) 30pF and below: W.V.:25/50V :0.025max. Q ≧ 400+20C W.V.:16/10V :0.035max. W.V.:6.3V/4V :0.05max.(C < 3.3F) C:Nominal :0.1max.(C ≧ 3.3F) Capacitance (pF) [R9]W.V.:50V: 0.05max. [E4] W.V.:25Vmin :0.025max [F5] W.V.:25Vmin :0.05max. (C  0.1F) :0.09max. (C ≧ 0.1F) W.V.:16/10V:0.125max. W.V.:6.3V:0.15max. More than 10,000Mor 500F(Whichever is smaller) No defects 3 Step Temperature Time 1 100C to 120C 1 min. 2 170C to 200C 1 min. SPECIFICATIONS AND TEST METHODS Specification No. Item Temperature Compensating Type 15 Temperature Cycle The measured and observed characteristics should satisfy the specifications in the following table Appearance No defects or abnormalities Capacitance Within ±2.5% or ±0.25pF Change (Whichever is larger) Q/D.F. I.R. Dielectric Strength R6,R7,C8,L8,R9:Within ±7.5% E4,F5:Within ±20% 30pF and over : Q ≧ 1000 [R6,R7,C8,L8] W.V.:100V : 0.025max. (C < 0. 068F) : 0.05max.(C ≧ 0.068F) 30pF and below: W.V.:25/50V :0.025max. Q ≧ 400+20C W.V.:16/10V :0.035max. W.V.:6.3V/4V :0.05max. (C < 3.3F) C:Nominal :0.1max. (C ≧ 3.3F) Capacitance (pF) [R9]W.V.:50V: 0.05max. [E4] W.V.:25Vmin. :0.025max [F5] W.V.:25Vmin. :0.05max. (C  0.1F) :0.09max.(C ≧ 0.1F) W.V.:16/10V:0.125max. W.V.:6.3V:0.15max. More than 10,000Mor 500F (Whichever is smaller) Capacitance Within ±5% or ±0.5pF Change (Whichever is larger) I.R. Dielectric Strength 17 Humidity Load R6,R7,C8,L8,R9:Within ±12.5% E4,F5:Within ±30% Dielectric Strength JEMCGS-0015Q Step Temp.(C) Time (min.) 1 Min. Operating Temp. +0/-3 30±3 2 Room Temp. 2 to 3 3 Max. Operating Temp. +3/-0 30±3 4 Room Temp. 2 to 3 ∙ Initial measurement for high dielectric constant type Perform a heat treatment at 150+0/-10C for one hour and then set at room temperature for 24±2 hours. Perform the initial measurement Set the capacitor at 40±2C and in 90 to 95% humiduty for 500±12 hours. Remove and set for 24±2 hours at room temperature, then measure. [R6,R7,C8,L8] W.V.:100V : 0.05max. (C < 0.068F) : 0.075max. (C ≧ 0.068F) 30pF and below: W.V.:25/50V :0.05max. Q ≧ 275 + 5 C 2 W.V.:16/10V :0.05max. W.V.:6.3V/4V:0.075max. (C < 3.3F) :0.125max. (C ≧ 3.3F) 10pF and below: [R9]W.V.:50V: 0.075max. Q ≧ 200+10C [E4] W.V.:25Vmin.:0.05max. C:Nominal Capacitance(pF) [F5] W.V.:25Vmin. :0.075max. (C0.1F) :0.125max. (C≧0.1F) W.V.:16/10V:0.15max. W.V.:6.3V:0.2max. More than 1,000Mor 50F(Whichever is smaller) No defects The measured and observed characteristics should satisfy the specifications in the following table R6,R7,C8,L8,R9:Within ±12.5% E4:Within ±30% F5:Within ±30% (W.V.>10V) F5:Within +30/-40% (W.V. ≦10V) 30pF and over : Q ≧ 200 [R6,R7,C8,L8] W.V.:100V : 0.05max. (C < 0.068F) : 0.075max. (C ≧ 0.068F) W.V.:25/50V :0.05max. W.V.:16/10V :0.05max. C:Nominal W.V.:6.3V/4V:0.075max. (C < 3.3F) Capacitance(pF) :0.125max. (C ≧ 3.3F) [R9]W.V.:50V: 0.075max. [E4] W.V.:25Vmin.:0.05max. [F5] W.V.:25Vmin. :0.075max. (C0.1F) :0.125max. (C≧0.1F) W.V.:16/10V:0.15max. W.V.:6.3V:0.2max. More than 500M or 25∙F(Whichever is smaller) 30pF and below: Q≧100 + 10 C 3 I.R. Fix the capacitor to the supporting jig in the same manner and under the same conditions as (10). Perform the five cycles according to the four heat treatments shown in the following table. Set for 24±2 hours at room temperature, then measure 30pF and over : Q ≧ 350 10pF and over, Appearance No defects or abnormalities Capacitance Within ±7.5% or ±0.75pF Change (Whichever is larger) Q/D.F. Method No defects 16 Humidity The measured and observed characteristics should satisfy the specifications in Steady State the following table Appearance No defects or abnormalities Q/D.F. Test High Dielectric Type No defects 4 Apply the rated voltage at 40±2C and 90 to 95% humidity for 500±12 hours. Remove and set for 24±2 hours at room temprature, then measure. The charge/discharge current is less than 50mA. ∙Initial measurement for F5/16Vmax. Apply the rated DC voltage for 1 hour at 40±2C . Remove and set for 24±2 hours at room temperature. Perform initial measurement. SPECIFICATIONS AND TEST METHODS Specification No. Item Temperature Compensating Type Test High Dielectric Type Method 18 High Temperature Load The measured and observed characteristics should satisfy the specifications Apply 200% of the rated voltage at the maximun operating in the following table temperature ±3C for 1000±12 hours . Set for 24±2 hours at room temperature, then measure. Appearance No defects or abnormalities The charge/discharge current is less than 50mA. Capacitance Within ±3% or ±0.3pF R6,R7,C8,L8,R9:Within ±12.5% Change (Whichever is larger) E4:Within ±30% ∙Initial measurement for high dielectric constant type. F5:Within±30% (Cap