GRM1535C1HR50BDD5D

CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL GRM1535C1HR50BDD5_ (0402, C0G, 0.5pF, 50Vdc) _: packaging code Reference Sheet 1.Scope This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment. 　　 2.MURATA Part NO. System (Ex.) GRM 15 (1)L/W Dimensions 3 5C (2)T Dimensions 1H (3)Temperature Characteristics R50 (4)DC Rated Voltage B (5)Nominal (6)Capacitance Tolerance Capacitance DD5 3. Type & Dimensions L W T e g e (Unit:mm) g (1)-1 L (1)-2 W (2) T e 1.0±0.05 0.5±0.05 0.3±0.03 0.1 to 0.3 0.4 min. 4.Rated value (3) Temperature Characteristics (Public STD Code):C0G(EIA) Temp. coeff Temp. Range or　Cap. Change (Ref.Temp.) 0±30 ppm/°C 25 to 125 °C (25 °C) (4) DC Rated Voltage 50 Vdc (6) (5) Nominal Capacitance Capacitance Tolerance 0.5 pF ±0.1 pF Specifications and Test Methods (Operationg Temp. Range) -55 to 125 °C 5.Package mark D J (8) Packaging f180mm Reel PAPER W8P2 f330mm Reel PAPER W8P2 Packaging Unit 10000 pcs./Reel 50000 pcs./Reel Product specifications in this catalog are as of Jan.24,2013,and are subject to change or obsolescence without notice. Please consult the approval sheet before ordering. Please read rating and !Cautions first. GRM1535C1HR50BDD5-01 1 D (7)Murata’s (8)Packaging Code Control Code ■SPECIFICATIONS AND TEST METHODS Specification No Item 1 Operating Temperature Range Temperature Compensating Type －55℃ to 125℃ Test Method High Dielectric Constant Type R6：－55℃ to 85℃ R7：－55℃ to 125℃ C8：－55℃ to 105℃ E4：10℃ to 85℃ F5：－30℃ to 85℃ L8/R9：－55℃ to 150℃ Reference Temperature : 25℃ 2 Rated Voltage See the previous pages. The rated voltage is defined as the maximum voltage which may be applied continuously to the capacitor. When AC voltage is superimposed on DC voltage, VP-P or VO-P, whichever is larger, should be maintained within the rated voltage range. 3 Appearance No defects or abnormalities. Visual inspection. 4 Dimension Within the specified dimensions. Using calipers. (GRM02 size is based on Microscope) 5 Dielectric Strength No defects or abnormalities. No failure should be observed when 300% of the rated voltage (ΔC to7U and 1X) or 250% of the rated voltage (R6,R7,C8,E4,F5,L8 and R9) is applied between the terminations for 1 to 5 seconds, provided the charge/discharge current is less than 50mA. 6 Insulation Resistance More than 10,000MΩ or 500Ω ∙F (whichever is smaller) The insulation resistance should be measured with a DC voltage not exceeding the rated voltage at 25℃ and 75%RH max. and within 2 minutes of charging, provided the charge/discharge current is less than 50mA. 7 Capacitance Within the specified tolerance. The capacitance/Q/D.F. should be measured at 25℃ at the frequency and voltage shown in the table. 8 Q/Dissipation Factor (D.F.) 30pF and over:Q≧1000 30pF and below:Q≧400+20C C:Nominal Capacitance(pF) 9 Capacitance Capacitance Within the specified Temperature Change Characteristics tolerance.(Table A-1) ［R6,R7,C8,L8］ W.V.:100V :0.025max.(C＜0.068mF) :0.05max.(C≧0.068mF) W.V.:50V/25V :0.025max. W.V.:16V/10V :0.035max. W.V.:6.3V/4V :0.05max.(C＜3.3mF) :0.1max.(C≧3.3mF) [R9] W.V.:50V: 0.05max. [E4] W.V.:25Vmin: 0.025max. [F5] W.V.:25Vmin :0.05max. (C＜0.1mF) :0.09max.(C≧0.1mF) W.V.:16V/10V:0.125max. W.V.:6.3V:0.15max. Char. Temp. Range Reference Cap. Change Temp. R6 -55C to +85C Within ±15% R7 -55C to +125C Within ±15% C8 -55C to +105C Within ±22% L8 -55C to +125C +125C to+150C 25C Within ±15% Within+15/-40% R9 -55C to+150C Within ±15% E4 +10C to +85C Within+22/-56% F5 -30C to +85C Within+22/-82% Temperature Within the specified Coefficent tolerance.(Table A-1) 　(1)Temperature Compensating Type Capacitance C≦1000pF C＞1000pF Frequency 1±0.1MHz 1±0.1kHz Voltage 0.5 to 5Vrms 1±0.2Vrms 　(2)High Dielectric Constant Type Capacitance C≦10μF C＞10μF E4 Frequency 1±0.1kHz 120±24Hz 1±0.1kHz Voltage 1±0.2Vrms 0.5±0.1Vrms 0.5±0.05Vrms The capacitance change should be measured after 5min. at each specified temp.stage. (1)Temperature Compensating Type The temperature coefficient is determind using the capacitance measured in step 3 as a reference. When cycling the temperature sequentially from step 1 through 5 (Δ C：+25℃ to +125℃,other temp.coeffs.:+25℃ to +85℃) the capacitance should be within the specified tolerance for the temperature coefficient and capacitance change as Table A-1. The capacitance drift is caluculated by dividing the differences between the maximum and minimum measured values in the step 1,3 and 5 by the cap.value in step 3. Step Temperature(C) 1 25±2 -55±3(for C to 7U/1X) 25±2 125±3(for Δ C), 85±3(for other TC) 25±2 2 3 Capacitance Within±0.2% or±0.05pF Drift (Whichever is larger.) *Not apply to 1X/25V 4 5 (2)High Dielectric Constant Type The ranges of capacitance change compared with the 25℃ value over the temperature ranges shown in the table should be within the specified ranges.* Step 1 2 　 3 4 5 Temperature(C) 25±2 -55±3(for R6/R7/C8/L8/R9) -30±3(for F5) 10±3(for E4) 25±2 150±3(for L8/R9) 125±3(for R7) 105±3(for C8) 25±2 Initial measurement for high dielectric constant type Perform a heat treatment at 150 +0/-10°C for one hour and then set for 24±2 hours at room temperature. Perform the initial measure-ment. 10 Adhesive Strength of Termination JEMCGS-0015Q No removal of the terminations or other defect should occur. 2 Solder the capacitor on the test jig (glass epoxy board)shown in Fig.3 using a eutectic solder. Then apply 10N* force in parallel with the test jig for 10±1sec. The soldering should be done either with an iron or using the reflow method and should be conducted with care so that the soldering is uniform and free of defects such as heat shock. *1N(GRM02),2N(GR□03),5N(GR□15,GRM18) ■SPECIFICATIONS AND TEST METHODS No Item 11 Vibration Resistance Appearance Temperature Compensating Type No defects or abnormalities. Specification High Dielectric Constant Type Test Method Solder the capacitor on the test jig (glass epoxy board) in the same manner and under the same conditions as (10). The capacitor should be subjected to a simple harmonic motion having a total amplitude of 1.5mm, the frequency being varied Capacitance Within the specified tolerance. Q/D.F. 12 Deflection Appearance 30pF and over:Q≧1000 ［R6,R7,C8,L8］ 30pF and beloow:Q≧400+20C W.V.:100V :0.025max.(C＜0.068mF) :0.05max.(C≧0.068mF) C:Nominal Capacitance(pF) W.V.:50V/25V :0.025max. W.V.:16V/10V :0.035max. W.V.:6.3V/4V :0.05max. (C＜3.3mF) :0.1max.(C≧3.3mF) [R9] W.V.:50V: 0.05max. [E4] W.V.:25V: 0.025max. [F5] W.V.:25Vmin :0.05max. (C＜0.1mF) :0.09max. (C≧0.1mF) W.V.:16V/10V:0.125max. W.V.:6.3V:0.15max. uniformly between the approximate limits of 10 and 55Hz. The No defects or abnormalities. Solder the capacitor on the test jig (glass epoxy board) shown in Fig.1 using an eutectic solder. Then apply a force in the direction shown in Fig 2 for 5±1 seconds. The soldering should be done by the reflow method and should be conducted with care so that the soldering is uniform and free of defects such as heat shock. Capacitance Within ±5% or± 0.5pF Change (Whichever is larger) Within ±10% frequency range, from 10 to 55Hz and return to 10Hz, should be traversed in approximately 1 minute. This motion should be applied for a period of 2 hours in each 3 mutually perpendicular directions(total of 6 hours). 13 Solderability of Termination 75% of the terminations is to be soldered evenly and continuously. Immerse the capacitor in a solution of ethanol (JIS-K-8101) and rosin (JIS-K-5902) (25% rosin in weight propotion) . Preheat at 80 to 120℃ for 10 to 30 seconds. After preheating , immerse in an eutectic solder solution for 2±0.5 seconds at 230±5℃ or Sn-3.0Ag-0.5Cu solder solution for 2±0.5 seconds at 245±5℃. 14 Resistance to Soldering Heat The measured and observed characteristics should satisfy the specifications in the following table. Preheat the capacitor at *120 to 150℃ for 1 minute. Appearance Capacitance Change Q/D.F. No defects or abnormalities. Within ±2.5% or± 0.25pF (Whichever is larger) 30pF and over:Q≧1000 30pF and beloow:Q≧400+20C C:Nominal Capacitance(pF) I.R. More than 10,000MW or 500W·F(Whichever is smaller) Dielectric Strength No defects. 15 Temperature Cycle Appearance The measured and observed characteristics should satisfy the specifications in the following table. No defects or abnormalities. Capacitance Within ±2.5% or± 0.25pF Change (Whichever is larger) 30pF and over:Q≧1000 Q/D.F. 30pF and beloow:Q≧400+20C C:Nominal Capacitance(pF) JEMCGS-0015Q R6,R7,R9,C8,L8:Within ±7.5% E4,F5 :Within ±20% ［R6,R7,C8,L8］ W.V.:100V :0.025max.(C＜0.068mF) :0.05max.(C≧0.068mF) W.V.:50V/25V :0.025max. W.V.:16V/10V :0.035max. W.V.:6.3V/4V :0.05max. (C＜3.3mF) :0.1max.(C≧3.3mF) [R9] W.V.:50V: 0.05max. [E4] W.V.:25V: 0.025max. [F5] W.V.:25Vmin :0.05max. (C＜0.1mF) :0.09max. (C≧0.1mF) W.V.:16V/10V:0.125max. W.V.:6.3V:0.15max. R6,R7,R9,C8,L8:Within ±7.5% E4,F5 :Within ±20% ［R6,R7,C8,L8］ W.V.:100V :0.025max.(C＜0.068mF) :0.05max.(C≧0.068mF) W.V.:50V/25V :0.025max. W.V.:16V/10V :0.035max. W.V.:6.3V/4V :0.05max. (C＜3.3mF) :0.1max.(C≧3.3mF) [R9] W.V.:50V: 0.05max. [E4] W.V.:25V: 0.025max. [F5] W.V.:25Vmin :0.05max. (C＜0.1mF) :0.09max. (C≧0.1mF) W.V.:16V/10V:0.125max. W.V.:6.3V:0.15max. I.R. More than 10,000MW or 500W·F(Whichever is smaller) Dielectric Strength No defects. 3 Immerse the capacitor in an eutectic solder solution * or Sn-3.0Ag-0.5Cu solder solution at 270±5℃ for 10±0.5 seconds. Set at room temperature for 24±2 hours, then measure. *Not apply to GRM02 · Initial measurement for high dielectric constant type Perform a heat treatment at 150+0/-10C for one hour and then set at room temperature for 24±2 hours. Perform the initial measurement. *Preheating for GRM32/43/55 Step 1 2 Temperature 100C to 120C 170C to 200C Time 1 min. 1 min. Fix the capacitor to the supporting jig in the same manner and under the same conditions as (10). Perform the five cycles according to the four heat treatments shown in the following table. Set for 24±2 hours at room temperature, then measure. Step Temp.(C) 1 Min. Operating Temp.+0/-3 Time (min) 30±3 2 Room Temp 2 to 3 3 Max. Operating Temp.+3/-0 30±3 4 Room Temp 2 to 3 · Initial measurement for high dielectric constant type Perform a heat treatment at 150+0/-10C for one hour and then set at room temperature for 24±2 hours. Perform the initial measurement. ■SPECIFICATIONS AND TEST METHODS Specification No 16 Humidity Steady State Item Temperature High Dielectric Compensating Type Constant Type The measured and observed characteristics should satisfy the specifications in the following table. No defects or abnormalities. Appearance Capacitance Within ±5% or± 0.5pF Change (Whichever is larger) 30pF and over:Q≧350 Q/D.F. 10pF and over 30pF and below:Q≧275+5C/2 10pF and below:Q≧200+10C C:Nominal Capacitance(pF) R6,R7,R9,C8,L8:Within ±12.5% E4,F5 :Within ±30% ［R6,R7,R9,C8,L8］ W.V.:100V :0.05max.( C＜0.068mF) :0.075max.(C≧0.068mF) W.V.:50V/25V :0.05max. W.V.:16V/10V :0.05max. W.V.:6.3V/4V :0.075max.(C＜3.3mF) :0.125max.(C≧3.3mF) [R9] W.V.:50V: 0.075max. [E4] W.V.:25V: 0.05max. [F5] W.V.:25Vmin :0.075max. (C＜0.1mF) :0.125max. (C≧0.1mF) W.V.:16V/10V:0.15max. W.V.:6.3V:0.2max. I.R. More than 1,000MW or 50W·F(Whichever is smaller) Dielectric Strength No defects. 17 Humidity Load The measured and observed characteristics should satisfy the specifications in the following table. Appearance No defects or abnormalities. Capacitance Within ±7.5% or±0.75pF Change (Whichever is larger) Q/D.F. 30pF and over:Q≧200 30pF and below:Q≧100+10C/3 C:Nominal Capacitance(pF) R6,R7,R9,C8,L8:Within ±12.5% E4 :Within ±30% F5 :Within ±30%(W.V.>10V) F5 :Within+30/-40%(W.V.≦10V) ［R6,R7,R9,C8,L8］ W.V.:100V :0.05max.( C＜0.068mF) :0.075max.(C≧0.068mF) W.V.:50V/25V :0.05max. W.V.:16V/10V :0.05max. W.V.:6.3V/4V :0.075max.(C＜3.3mF) :0.125max.(C≧3.3mF) [R9] W.V.:50V: 0.075max. [E4] W.V.:25V: 0.05max. [F5] W.V.:25Vmin :0.075max. (C＜0.1mF) :0.125max. (C≧0.1mF) W.V.:16V/10V:0.15max. W.V.:6.3V:0.2max. I.R. More than 500MΩ or 25Ω·F(Whichever is smaller) Dielectric Strength No defects. 18 High Temperature Load The measured and observed characteristics should satisfy the specifications in the following table. Appearance No defects or abnormalities. Capacitance Within ±3% or ±0.3pF Change (Whichever is larger) Q/D.F. R6,R7,R9,C8,L8:Within ±12.5% E4 :Within ±30% F5 :Within ±30%(Cap