H11AA1TVM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. H11AA1M, H11AA4M 6-Pin DIP AC Input Phototransistor Optocouplers Features Description ■ Bi-polar Emitter Input The H11AA1M and H11AA4M devices consist of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. ■ Built-in Reverse Polarity Input Protection ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ AC Line Monitor ■ Unknown Polarity DC Sensor ■ Telephone Line Interface Schematic Package Outlines 1 6 BASE 2 5 COLLECTOR 3 4 EMITTER Figure 1. Schematic Figure 2. Package Outlines ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 www.fairchildsemi.com H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers April 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 www.fairchildsemi.com 2 H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +100 °C TJ TSOL PD Junction Temperature -40 to +125 ºC 260 for 10 seconds °C Total Device Power Dissipation @ 25°C 270 mW Derate Linearly From 25°C 2.94 mW/°C 60 mA Forward Current – Peak (1 µs pulse, 300 pps) ±1.0 A LED Power Dissipation @ 25°C 120 mW Derate Linearly From 25°C 1.41 mW/°C Continuous Collector Current 50 mA Detector Power Dissipation @ 25°C 150 mW Derate linearity from 25°C 1.76 mW/°C Lead Solder Temperature EMITTER IF IF(pk) PD Continuous Forward Current DETECTOR IC PD ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 www.fairchildsemi.com 3 H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Absolute Maximum Ratings TA = 25°C Unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 1.17 1.50 V EMITTER VF Input Forward Voltage IF = ±10 mA CJ Capacitance VF = 0 V, f = 1.0 MHz 80 pF V DETECTOR BVCEO Breakdown Voltage, Collector-to-Emitter IC = 1.0 mA, IF = 0 30 100 BVCBO Breakdown Voltage, Collector-to-Base IC = 100 µA, IF = 0 70 120 V BVEBO Breakdown Voltage, Emitter-to-Base IE = 100 µA, IF = 0 5 10 V BVECO Breakdown Voltage, Emitter-to-Collector IE = 100 µA, IF = 0 7 10 V Leakage Current, Collector-to-Emitter VCE = 10 V, IF = 0 1 ICEO 50 nA CCE Capacitance Collector to Emitter VCE = 0, f = 1 MHz 10 pF CCB Collector to Base VCB = 0, f = 1 MHz 80 pF CEB Emitter to Base VEB = 0, f = 1 MHz 15 pF Transfer Characteristics Symbol CTRCE VCE(SAT) Characteristics Test Conditions Device Min. H11AA1M 20 % H11AA4M 100 % 0.33 Current Transfer Ratio, Collector-to-Emitter IF = ±10 mA, VCE = 10 V Current Transfer Ratio, Symmetry IF = ±10 mA, VCE = 10 V (Figure 13) All Saturation Voltage, Collector-to-Emitter IF = ±10 mA, ICE = 0.5 mA All Typ. Max. Unit 3.00 0.40 V Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 Min. Typ. 4170 VI-O = 0 V, f = 1 MHz VI-O = ±500 VDC, TA = 25°C Unit VACRMS 0.7 1011 Max. pF Ω www.fairchildsemi.com 4 H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Electrical Characteristics 100 1.4 TA = 25°C TA = 25°C VCE = 5 V 80 Normalized to IF = 10 mA 60 1.0 40 NORMALIZED CTR I F – INPUT CURRENT (mA) 1.2 20 0 -20 -40 0.8 0.6 0.4 -60 0.2 -80 0.0 -100 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0 2.0 5 Figure 3. Input Voltage vs. Input Current 20 1.0 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) VCE = 5 V Normalized to IF = 10 mA , TA = 25°C 1.2 IF = 10 mA NORMALIZED CTR 15 Figure 4. Normalized CTR vs. Forward Current 1.4 1.0 IF = 5 mA 0.8 IF = 20 mA 0.6 0.4 0.2 -60 -40 -20 0 20 40 60 80 V 0.9 CE = 5V TA = 25°C 0.8 0.7 IF = 20mA 0.6 IF = 10 mA 0.5 IF = 5 mA 0.4 0.3 0.2 0.1 0.0 100 10 100 1.0 V CE = 0.3 V TA = 25°C 0.8 0.7 IF = 20 m A 0.6 IF = 10 mA 0.5 IF = 5 mA 0.4 0.3 0.2 0.1 0.0 10 100 1000 RBE- BASE RESISTANCE (kΩ) Figure 7. CTR vs. RBE (Saturated) ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 Figure 6. CTR vs. RBE (Unsaturated) VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 5. Normalized CTR vs. Ambient Temperature 0.9 1000 RBE – BASE RESISTANCE (kΩ) TA – AMBIENT TEMPERATURE (°C) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 IF – FORWARD CURRENT (mA) VF – INPUT VOLTAGE (V) 100 T = 25°C A 10 1 IF = 2.5mA IF = 5mA 0.1 IF = 10mA 0.01 0.001 0.01 0.1 IF = 20mA 1 10 IC - COLLECTOR CURRENT (mA) Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current www.fairchildsemi.com 5 H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Typical Performance Characteristics 1000 7 SWITCHING SPEED (μs) A NORMALIZED ton – (ton(RBE) / ton(open)) IF = 10 mA VCC = 10 V T = 25°C Toff 100 Tf 10 Ton Tr 1 VCC = 10 V IC = 2 mA RL = 100 Ω T = 25°C 6 A 5 4 3 2 1 0 0.1 0.1 1 10 10 100 100 10000 100000 Figure 10. Normalized ton vs. RBE Figure 9. Switching Speed vs. Load Resistor 3.0 10000 VCC = 10 V IC = 2 mA RL = 100 Ω T = 25°C 2.5 ICEO – COLLECTOR -EMITTER DARK CURRENT (nA) NORMALIZED toff – (toff(RBE) / toff(open)) 1000 RBE- BASE RESISTANCE (kΩ) R – LOAD RESISTOR (kΩ) A 2.0 1.5 1.0 0.5 0.0 1000 100 VCE = 10 V VCE = 30 V 10 1 0.1 10 100 1000 10000 100000 0 RBE – BASE RESISTANCE (kΩ) 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature 10 NORMALIZED OUTPUT CURRENT 5 1 IF = I - 10 mA I IF = I 10 mA I 0.5 NORMALIZED TO: VCE = 10 V IF = 10 mA 0.1 .05 THE MAXIMUM PEAK OUTPUT CURRENT WILL BE NO MORE THAN THREE TIMES THE MINIMUM PEAK OUTPUT CURRENT AT IF = ±10 mA .01 .005 .01 .05 .1 .5 1 5 10 VCE – COLLECTOR TO EMITTER VOLTAGE (V) Figure 13. Output Symmetry Characteristics ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 www.fairchildsemi.com 6 H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Typical Performance Characteristics (Continued) H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Reflow Profile 300 260°C 280 260 > 245°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 14. Reflow Profile ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 www.fairchildsemi.com 7 Part Number Package Packing Method H11AA1M DIP 6-Pin Tube (50 Units) H11AA1SM SMT 6-Pin (Lead Bend) Tube (50 Units) H11AA1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) H11AA1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H11AA1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) H11AA1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) H11AA1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the H11AA4M device. Marking Information 1 V 3 H11AA1 2 X YY Q 6 5 4 Figure 15. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “5” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA4M Rev. 1.3 www.fairchildsemi.com 8 H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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