H11AV1AM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. H11AV1M, H11AV1AM 6-Pin DIP Phototransistor Optocouplers Features Description ■ H11AV1M and H11AV1AM Feature 0.3" and 0.4" The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. Input-Output Lead Spacing Respectively ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Power Supply Regulators ■ Digital Logic Inputs ■ Microprocessor Inputs Schematic ANODE 1 Package Outlines 6 BASE 5 COLLECTOR CATHODE 2 N/C 3 4 EMITTER Figure 1. Schematic Figure 2. Package Outlines ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 www.fairchildsemi.com H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers April 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 www.fairchildsemi.com 2 H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit -40 to +125 °C Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 ºC 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 2.94 mW/°C TOTAL DEVICE TSTG TOPR TJ TSOL PD Storage Temperature Lead Solder Temperature EMITTER IF DC / Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V LED Power Dissipation @ TA = 25°C 120 mW Derate Above 25°C 1.41 mW/°C Collector-to-Emitter Voltage 70 V VCBO Collector-to-Base Voltage 70 V VECO Emitter-to-Collector Voltage 7 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C PD DETECTOR VCEO PD ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 www.fairchildsemi.com 3 H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Absolute Maximum Ratings TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. TA = 25°C 0.80 1.18 1.50 TA = -55°C 0.90 1.28 1.70 TA = 100°C 0.70 1.05 1.40 Unit EMITTER VF Input Forward Voltage (IF = 10 mA) IR V Reverse Leakage Current VR = 6.0 V 10 µA BVCEO Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 70 100 V BVCBO Collector-to-Base Breakdown Voltage IC = 100 µA, IF = 0 70 120 V BVECO 7 10 DETECTOR Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0 ICEO Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 ICBO Collector-to-Base Dark Current VCB = 10 V CCE Capacitance VCE = 0 V, f = 1 MHz V 1 50 nA 0.5 nA 8 pF Transfer Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 300 % DC CHARACTERISTIC CTR VCE (SAT) Current Transfer Ratio, Collector-to-Emitter IF = 10 mA, VCE = 10 V Saturation Voltage, Collector-to-Emitter IC = 2 mA, IF = 20 mA 0.4 V 100 AC CHARACTERISTIC TON Non-Saturated Turn-on Time IC = 2 mA, VCC = 10 V, RL = 100 Ω (Figure 13) 15 µs TOFF Non Saturated Turn-off Time IC = 2 mA, VCC = 10 V, RL = 100 Ω (Figure 13) 15 µs Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 Min. Typ. 4170 VI-O = 0 V, f = 1 MHz VI-O = ±500 VDC, TA = 25°C Unit VACRMS 0.2 1011 Max. pF Ω www.fairchildsemi.com 4 H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Electrical Characteristics 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF – FORWARD VOLTAGE (V) 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C VCE = 5.0V TA = 25°C Normalized to IF = 10 mA 1.0 0.8 0.6 0.4 1.2 TA = 100°C 1.1 0.2 1.0 0.0 1 10 100 0 2 4 IF – LED FORWARD CURRENT (mA) Figure 3. LED Forward Voltage vs. Forward Current NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) IF = 5 mA NORMALIZED CTR 10 12 14 16 18 20 1.0 1.2 1.0 IF = 10 mA 0.8 0.6 IF = 20 mA 0.4 Normalized to IF = 10 mA TA = 25°C 0.2 -60 -40 -20 0 20 40 60 80 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 100 10 100 Figure 6. CTR vs. RBE (Unsaturated) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 5. Normalized CTR vs. Ambient Temperature 1.0 0.9 IF = 20 mA VCE = 0.3 V 0.8 IF = 5 mA 0.7 0.6 0.5 IF = 10 mA 0.4 0.3 0.2 0.1 10 100 1000 100 TA = 25°C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 IF = 5 mA 0.001 0.01 IF = 10 mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) RBE- BASE RESISTANCE (kΩ) Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current Figure 7. CTR vs. RBE (Saturated) ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 1000 RBE – BASE RESISTANCE (kΩ) TA – AMBIENT TEMPERATURE (°C) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 8 Figure 4. Normalized CTR vs. Forward Current 1.4 0.0 6 IF – FORWARD CURRENT (mA) www.fairchildsemi.com 5 H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Typical Performance Curves 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (μs) IF = 10 mA VCC = 10 V TA = 25°C 100 Toff 10 Tf Ton Tr 1 0.1 0.1 1 10 VCC = 10 V IC = 2 mA RL = 100 Ω 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 100 100 1000 10000 100000 RBE – BASE RESISTANCE (kΩ) R – LOAD RESISTOR (kΩ) Figure 10. Normalized ton vs. RBE Figure 9. Switching Speed vs. Load Resistor 10000 ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 NORMALIZED toff - (toff(RBE) / toff(open)) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10 V IC = 2 mA RL = 100 Ω 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100 10 1 0.1 0.01 0.001 100000 VCE = 10 V TA = 25°C 1000 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) RBE – BASE RESISTANCE (kΩ) Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature Switching Time Test Circuit and Waveform WAVE FORMS TEST CIRCUIT VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 13. Switching Time Test Circuit and Waveform ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 www.fairchildsemi.com 6 H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Typical Performance Curves (Continued) H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Reflow Profile 300 260°C 280 260 > 245°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 14. Reflow Profile ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 www.fairchildsemi.com 7 Part Number Package Packing Method H11AV1M DIP 6-Pin Tube (50 Units) H11AV1SM SMT 6-Pin (Lead Bend) Tube (50 Units) H11AV1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) H11AV1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H11AV1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) H11AV1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) H11AV1AM DIP 6-Pin, 0.4" Lead Spacing Tube (50 Units) H11AV1AVM DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Marking Information 1 V 3 H11AV1 2 X YY Q 6 5 4 Figure 15. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “5” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM Rev. 1.4 www.fairchildsemi.com 8 H11AV1M, H11AV1AM — 6-Pin DIP Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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