H11D1VM

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 4N38M, H11D1M, H11D3M, MOC8204M 6-Pin DIP High Voltage Phototransistor Optocouplers Features Description ■ High Voltage: The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. – MOC8204M, BVCEO = 400 V – H11D1M, BVCEO = 300 V – H11D3M, BVCEO = 200 V ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Power Supply Regulators ■ Digital Logic Inputs ■ Microprocessor Inputs ■ Appliance Sensor Systems ■ Industrial Controls Schematic Package Outlines ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 www.fairchildsemi.com 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers December 2014 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 www.fairchildsemi.com 2 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Unit All -40 to +125 °C TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature All -40 to +100 °C Junction Temperature All -40 to +125 ºC Lead Solder Temperature All 260 for 10 seconds °C 420 mW 3.5 mW/°C TJ TSOL PD Total Device Power Dissipation @ TA = 25°C All Derate Above 25°C EMITTER IF Forward DC Current(2) All 80 mA VR Reverse Input Voltage(2) All 6.0 V Forward Current – Peak (1 µs pulse, 300pps)(2) All 3.0 A IF(pk) PD LED Power Dissipation @ TA = 25°C(2) All Derate Above 25°C 120 mW 1.41 mW/°C 300 mW DETECTOR PD VCEO VCBO Power Dissipation @ TA = 25°C All Derate linearly above 25°C Collector to Emitter Voltage(2) Collector Base Voltage(2) 4.0 mW/°C MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V 7 V 100 mA VECO Emitter to Collector Voltage(2) H11D1M, H11D3M, MOC8204M IC Collector Current (Continuous) All Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 www.fairchildsemi.com 3 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Absolute Maximum Ratings TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit All 1.15 1.50 V All -1.8 EMITTER VF Forward Voltage(3) ΔVF ΔTA Forward Voltage Temperature Coefficient BVR Reverse Breakdown Voltage IR = 10 µA CJ IR Junction Capacitance Reverse Leakage Current(3) IF = 10 mA All VF = 0 V, f = 1 MHz VF = 1 V, f = 1 MHz VR = 6 V 6 All All mV/°C 25 V 50 pF 65 pF 0.05 10 µA DETECTOR BVCEO Breakdown Voltage Collector-to-Emitter(3) RBE = 1 MΩ, IC = 1.0 mA, IF = 0 No RBE, IC = 1.0 mA MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V MOC8204M 400 V H11D1M 300 V H11D3M 200 V BVCBO Collector to Base(3) IC = 100 µA, IF = 0 4N38M 80 V BVEBO Emitter to Base IE = 100 µA, IF = 0 4N38M 7 V BVECO Emitter to Collector IE = 100 µA, IF = 0 All 7 VCE = 300 V, IF = 0, TA = 25°C VCE = 300 V, IF = 0, TA = 100°C ICEO Leakage Current Collector to Emitter(3) (RBE = 1 MΩ) VCE = 200V, IF = 0, TA = 25°C VCE = 200 V, IF = 0, TA = 100°C VCE = 100 V, IF = 0, TA = 25°C VCE = 100 V, IF = 0, TA = 100°C No RBE, VCE = 60 V, IF = 0, TA = 25°C 10 V 100 nA 250 µA 100 nA 250 µA 100 nA 250 µA 50 nA MOC8204M H11D1M H11D3M 4N38M Note: 3. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 www.fairchildsemi.com 4 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Electrical Characteristics TA = 25°C unless otherwise specified. Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit H11D1M, H11D3M, MOC8204M 2 (20) mA (%) 4N38M 2 (20) mA (%) EMITTER CTR IF = 10 mA, VCE = 10 V, Current Transfer Ratio, R = 1 MΩ BE Collector-to-Emitter IF = 10 mA, VCE = 10 V VCE(SAT) Saturation Voltage(4) IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ H11D1M, H11D3M, MOC8204M 0.1 0.4 V 1.0 V IF = 20 mA, IC = 4 mA 4N38M VCE = 10 V, IC = 2 mA, RL = 100 Ω All 5 µs All 5 µs SWITCHING TIMES tON Non-Saturated Turn-on Time tOFF Turn-off Time Note: 4. Parameters meet or exceed JEDEC registered data (for 4N38M only). Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 Min. Typ. 4170 VI-O = 0 V, f = 1 MHz VI-O = ±500 VDC, TA = 25°C Unit VACRMS 0.2 1011 Max. pF Ω www.fairchildsemi.com 5 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Electrical Characteristics (Continued) NORMALIZED IC – OUTPUT CURRENT VF – FORWARD VOLTAGE (V) 1.8 1.7 1.6 1.5 1.4 TA = -55˚C 1.3 TA = 25˚C 1.2 1.1 1 10 IF = 50 mA IF = 10 mA 1 IF = 5 mA 0.1 0.01 TA = 100˚C 1.0 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 10 0.1 100 1 IF – LED FORWARDCURRENT (mA) 10 100 VCE – COLLECTOR VOLTAGE (V) Figure 3. LED Forward Voltage vs. Forward Current Figure 4. Normalized Output Characteristics NORMALIZED IC – OUTPUT CURRENT NORMALIZED IC – OUTPUT CURRENT 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 1 0.1 0.01 1 IF = 20 mA IF = 10 mA 1 IF = 5 mA 0.1 -60 10 -40 -20 IF – LED INPUT CURRENT (mA) NORMALIZED ICBO – COLLECTOR-BASE CURRENT NORMALIZED ICEO – DARK CURRENT VCE = 300 V VCE = 100 V 100 10 VCE = 50 V 1 0.1 10 20 30 40 50 60 70 80 90 100 110 40 60 80 100 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 9 8 IF = 50 mA 7 6 5 4 3 2 IF = 10 mA 1 0 -60 IF = 5 mA -40 -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (˚C) TA – AMBIENT TEMPERATURE (˚C) Figure 7. Normalized Dark Current vs. Ambient Temperature ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 20 Figure 6. Normalized Output Current vs. Temperature Normalized to: VCE = 100 V RBE = 106 Ω TA = 25˚C 1000 0 TA – AMBIENT TEMPERATURE (˚C) Figure 5. Normalized Output Current vs. LED Input Current 10000 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C Figure 8. Normalized Collector-Base Current vs. Temperature www.fairchildsemi.com 6 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Typical Performance Curves 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Reflow Profile 300 260°C 280 260 > 245°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 9. Reflow Profile ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 www.fairchildsemi.com 7 Part Number Package Packing Method H11D1M DIP 6-Pin Tube (50 Units) H11D1SM SMT 6-Pin (Lead Bend) Tube (50 Units) H11D1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) H11D1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H11D1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) H11D1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) H11D1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M devices. Marking Information 1 V 3 H11D1 2 X YY Q 6 5 4 Figure 10. 12. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “4” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 www.fairchildsemi.com 8 4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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