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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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H11G1M, H11G2M
6-Pin DIP High Voltage Photodarlington Optocouplers
Features
General Description
■ High BVCEO:
The H11G1M and H11G2M are photodarlington-type
optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a
silicon darlington connected phototransistor which has
an integral base-emitter resistor to optimize elevated
temperature characteristics.
– 100 V Minimum for H11G1M
– 80 V Minimum for H11G2M
■ High Sensitivity to Low Input Current
(Minimum 500% CTR at IF = 1 mA)
■ Low Leakage Current at Elevated Temperature
(Maximum 100 µA at 80°C)
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ CMOS Logic Interface
■ Telephone Ring Detector
■ Low Input TTL Interface
■ Power Supply Isolation
■ Replace Pulse Transformer
Schematic
Package Outlines
ANODE 1
6 BASE
5 COLLECTOR
CATHODE 2
N/C 3
4 EMITTER
Figure 2. Package Outlines
Figure 1. Schematic
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
www.fairchildsemi.com
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
December 2014
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
TS
Case Temperature(1)
175
°C
IS,INPUT
Current(1)
350
mA
800
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO =
500 V(1)
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
www.fairchildsemi.com
2
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Unit
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +125
°C
TOPR
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
ºC
TJ
TSOL
PD
260 for 10 seconds
°C
Total Device Power Dissipation @ TA = 25°C
Lead Solder Temperature
290
mW
Derate Above 25°C
3.5
mW/°C
EMITTER
IF
Forward Input Current
60
mA
VR
Reverse Input Voltage
6.0
V
Forward Current – Peak (1 µs pulse, 300 pps)
3.0
A
LED Power Dissipation @ TA = 25°C
90
mW
Derate Above 25°C
1.8
mW/°C
IF(pk)
PD
DETECTOR
Collector-Emitter Voltage
VCEO
PD
H11G1M
100
V
H11G2M
80
V
Photodetector Power Dissipation @ TA = 25°C
200
mW
Derate Above 25°C
2.67
mW/°C
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
www.fairchildsemi.com
3
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.
Max.
Unit
All
1.3
1.5
V
All
-1.8
mV/°C
25
V
EMITTER
VF
Forward Voltage
ΔVF
ΔTA
Forward Voltage
Temperature Coefficient
BVR
Reverse Breakdown
Voltage
CJ
Junction Capacitance
IR
Reverse Leakage
Current
IF = 10 mA
IR = 10 µA
All
VF = 0 V, f = 1 MHz
3.0
All
VF = 1 V, f = 1 MHz
VR = 3.0V
All
50
pF
65
pF
0.001
10
µA
DETECTOR
BVCEO
Breakdown Voltage
Collector to Emitter
IC = 1.0 mA, IF = 0
BVCBO
Collector to Base
IC = 100 µA
BVEBO
Emitter to Base
ICEO
Leakage Current
Collector to Emitter
H11G1M
100
V
H11G2M
80
V
H11G1M
100
V
H11G2M
80
V
All
7
10
V
VCE = 80 V, IF = 0
H11G1M
100
nA
VCE = 60 V, IF = 0
H11G2M
100
nA
VCE = 80 V, IF = 0, TA = 80°C
H11G1M
100
µA
VCE = 60 V, IF = 0, TA = 80°C
H11G2M
100
µA
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.
Max.
Unit
All
100
(1000)
mA (%)
All
5 (500)
mA (%)
EMITTER
CTR
VCE(SAT)
Current Transfer Ratio, IF = 10 mA, VCE = 1 V
Collector to Emitter
IF = 1 mA, VCE = 5 V
Saturation Voltage
IF = 16 mA, IC = 50 mA
All
0.85
1.0
V
IF = 1 mA, IC = 1 mA
All
0.75
1.0
V
RL = 100 Ω, IF = 10 mA,
VCE = 5 V, f ≤ 30 Hz,
Pulse Width ≤ 300 µs
All
5
µs
All
100
µs
SWITCHING TIMES
tON
Turn-on Time
tOFF
Turn-off Time
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
Input-Output Isolation Voltage t = 1 Minute
CISO
Isolation Capacitance
VI-O = 0 V, f = 1 MHz
RISO
Isolation Resistance
VI-O = ±500 VDC, TA = 25°C
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
Min.
Typ.
4170
Unit
VACRMS
0.2
1011
Max.
pF
Ω
www.fairchildsemi.com
4
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Electrical Characteristics
100
IC – NORMALIZED OUTPUT CURRENT
IC – NORMALIZED OUTPUT CURRENT
10
1
Normalized to:
VCE = 5 V
IF = 1 mA
0.1
0.01
0.001
0.1
1
IF = 50mA
10
IF = 5mA
IF = 1mA
1
IF = 0.5mA
0.1
0.01
-60
10
-40
Figure 3. Output Current vs. Input Current
0
20
40
60
80
100
120
Figure 4. Normalized Output Current
vs. Temperature
1000
100
Normalized to:
VCE = 5 V
IF = 1 mA
TA = 25˚C
IF = 50 mA
ICEO – DARK CURRENT (nA)
IC – NORMALIZED OUTPUT CURRENT
-20
TA – AMBIENT TEMPERATURE (˚C)
IF – LED INPUT CURRENT(mA)
10
Normalized to:
VCE = 5 V
IF = 1 mA
TA = 25˚C
IF = 10 mA
IF = 2 mA
IF = 1 mA
1
IF = 0.5 mA
0.1
VCE = 80 V
100
VCE = 30 V
10
VCE = 1 0V
1
0.1
0.01
0.01
1
0
10
10
20
30
40
50
60
70
80
90
100
TA – AMBIENT TEMPERATURE (˚C)
VCE – COLLECTOR – EMITTER VOLTAGE (V)
Figure 5. Output Current
vs. Collector-Emitter Voltage
Figure 6. Collector-Emitter Dark Current
vs. Ambient Temperature
IF – FORWARD CURRENT (mA)
10
RL = 10 Ω
RL = 100 Ω
RL = 1 kΩ
1
Normalized to:
VCC = 5 V
IF = 10 mA
RL = 100 Ω
0.1
0.1
1
10
ton + toff – TOTAL SWITCHING SPEED (NORMALIZED)
Figure 7. Input Current vs. Total Switching Speed (Typical Values)
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
www.fairchildsemi.com
5
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Typical Performance Curves
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Reflow Profile
300
260°C
280
260
> 245°C = 42 s
240
220
200
180
°C
Time above
183°C = 90 s
160
140
120
1.822°C/s Ramp-up rate
100
80
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 8. Reflow Profile
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
www.fairchildsemi.com
6
Part Number
Package
Packing Method
H11G1M
DIP 6-Pin
Tube (50 Units)
H11G1SM
SMT 6-Pin (Lead Bend)
Tube (50 Units)
H11G1SR2M
SMT 6-Pin (Lead Bend)
Tape and Reel (1000 Units)
H11G1VM
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
H11G1SVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
H11G1SR2VM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
H11G1TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Note:
2. The product orderable part number system listed in this table also applies to the H11G2M device.
Marking Information
1
V
3
H11G1
2
X YY Q
6
4
5
Figure 9. Top Mark
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “4”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M Rev. 1.0.5
www.fairchildsemi.com
7
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Ordering Information
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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